TWI762603B - 加熱接合用片材及附加熱接合用片材之切割帶 - Google Patents

加熱接合用片材及附加熱接合用片材之切割帶 Download PDF

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TWI762603B
TWI762603B TW107109598A TW107109598A TWI762603B TW I762603 B TWI762603 B TW I762603B TW 107109598 A TW107109598 A TW 107109598A TW 107109598 A TW107109598 A TW 107109598A TW I762603 B TWI762603 B TW I762603B
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adhesive layer
bonding
heat
sheet
bonding sheet
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TW107109598A
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TW201900802A (zh
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菅生悠樹
本田哲士
下田麻由
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日商日東電工股份有限公司
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    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
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    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
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Abstract

本發明提供一種適於一面抑制接合對象物之位置偏移一面實現燒結接合之加熱接合用片材、及帶有此種加熱接合用片材之切割帶。 本發明之加熱接合用片材(10)具備包含含有導電性金屬之燒結性粒子之黏著層(11)，且黏著層(11)對在70℃、0.5 MPa、及1秒之壓合條件下以5 mm見方之尺寸壓合有該黏著層(11)之銀平面於70℃時的剪切接著力為0.1 MPa以上。本發明之附加熱接合用片材之切割帶具備具有包含基材及黏著劑層之積層構造之切割帶、及該黏著劑層上之加熱接合用片材(10)。

Description

加熱接合用片材及附加熱接合用片材之切割帶
本發明係關於一種可用於半導體裝置之製造之加熱接合用片材、及帶有此種加熱接合用片材之切割帶。
於半導體裝置之製造中，作為用以對引線框架或絕緣電路基板等支持基板將半導體晶片一面獲得與支持基板側之電性連接一面黏晶之方法，已知有於支持基板與晶片之間形成Au-Si共晶合金層而實現接合狀態之方法、或利用焊料或含有導電性粒子之樹脂作為接合材之方法。 另一方面，近年來，負責電力之供給控制之電力半導體裝置之普及較為顯著，電力半導體裝置因動作時之通電量較大而導致發熱量較大之情況較多。因此，於電力半導體裝置之製造中，關於將半導體晶片一面獲得與支持基板側之電性連接一面黏晶於支持基板之方法，要求高溫動作時亦可實現可靠性較高之接合狀態。於採用SiC或GaN作為半導體材料而謀求高溫動作化之電力半導體裝置中，尤其此種要求較強。並且，為了響應此種要求，提出有使用包含含有燒結性粒子及溶劑等之組合物之加熱接合用材料之技術作為伴隨電性連接之黏晶方法。 於使用含有燒結性粒子之加熱接合用材料所進行之黏晶中，首先，經由加熱接合用材料將半導體晶片於特定之溫度、負荷條件下載置於支持基板之晶片接合預定位置。其後，以於支持基板與其上之半導體晶片之間產生加熱接合用材料中之溶劑之揮發等且於燒結性粒子間進行燒結的方式進行特定溫度、加壓條件下之加熱步驟。藉此，將半導體晶片一面電性連接一面機械接合於支持基板。此種技術例如記載於下述專利文獻1～3。 [先前技術文獻] [專利文獻] [專利文獻1]國際公開第2008/065728號 [專利文獻2]日本專利特開2013-039580號公報 [專利文獻3]日本專利特開2014-111800號公報
[發明所欲解決之問題] 於使用含有燒結性粒子之加熱接合用材料所進行之黏晶中，先前存在如下情況，即，於經由加熱接合用材料將半導體晶片載置於支持基板上時或載置後，因所使用之加熱接合用材料之變形或流動而於半導體晶片產生晶片移動即位置偏移。此種位置偏移之產生可成為作為製造對象物之半導體裝置之良率下降之原因。 本發明係基於如上所述之情況而想出者，其目的在於提供一種適於一面抑制接合對象物之位置偏移一面實現燒結接合之加熱接合用片材、及帶有此種加熱接合用片材之切割帶。 [解決問題之技術手段] 根據本發明之第1態樣，提供一種加熱接合用片材。該加熱接合用片材具備包含含有導電性金屬之燒結性粒子之黏著層。又，本加熱接合用片材係黏著層對在70℃、0.5 MPa、及1秒之壓合條件下以5 mm見方之尺寸壓合有該黏著層之銀平面於70℃時的剪切接著力為0.1 MPa以上。於本發明中，剪切接著力設為接著力測定對象物向剪切方向之位移速度為0.5 mm/秒之條件下之測定值。此種構成之本加熱接合用片材可用於將接合對象物間燒結接合。例如，本加熱接合用片材於半導體裝置之製造中，可用於將半導體晶片一面獲得與支持基板側之電性連接一面燒結接合於支持基板。 於使用用於燒結接合之加熱接合用材料來實現燒結接合之過程中，於在接合對象物間介置有該材料之狀態下將接合對象物彼此於特定溫度、負荷條件下壓合，而且，進行燒結接合用之高溫加熱，形成將接合對象物間接合之燒結層。壓合係例如於在加熱接合用材料中不伴隨急遽之組成變化而較常溫時更期待壓合性提高之溫度條件、包含70℃及其左右之溫度範圍即50～90℃下進行。本發明之第1態樣之加熱接合用片材於70℃時之上述剪切接著力如上所述般為0.1 MPa以上，此種構成抑制於在接合對象物間介置有本加熱接合用片材之狀態下將接合對象物彼此壓合時或壓合後於接合對象物產生位置偏移，於此方面較佳。於使用本加熱接合用片材將支持基板燒結接合於半導體晶片之情形時，例如70℃時之上述剪切接著力為0.1 MPa以上之本加熱接合用片材所具備之構成抑制於在支持基板與半導體晶片之間介置有該片材之狀態下將半導體晶片壓合於支持基板之暫時固定時於該半導體晶片產生之晶片移動即位置偏移，於此方面較佳。暫時固定時之此種位置偏移之抑制於防止伴隨超出容許範圍之位置偏移而將半導體晶片燒結接合於支持基板的方面較佳，因此，於提高作為製造對象物之半導體裝置之良率之方面較佳。 又，本加熱接合用片材適於藉由厚度均勻之燒結層將接合對象物間接合。於將用於燒結接合之加熱接合用材料以糊膠之形態藉由塗佈而供給至接合對象物上之情形時，存在所供給之糊膠之膜之厚度不均勻之情況。若加熱接合用材料糊膠膜之厚度不均勻，則出現藉由不均勻之燒結層將接合對象物間接合之情況。相對於此，根據本加熱接合用片材，能夠於以均勻之厚度製作之片材之形態下將接合用材料供給至接合對象物上，因此，可藉由厚度均勻之燒結層將接合對象物間接合。利用厚度均勻之燒結層所進行之燒結接合例如於實現半導體晶片對支持基板之較高之接合可靠性方面較佳。 此外，本加熱接合用片材適於一面抑制燒結金屬自接合對象物間之溢出或燒結金屬向接合對象物之附膠一面將接合對象物間燒結接合。於將用於燒結接合之加熱接合用材料以糊膠之形態供給至接合對象物間之情形時，於升溫過程中該糊膠材料容易流動化，因此，存在產生燒結金屬自接合對象物間之溢出或燒結金屬於接合對象物側面之附膠之情況。相對於此，本加熱接合用片材係將用於燒結接合之加熱接合用材料以不易流動化之片材之形態進行供給者，因此，不易產生此種溢出或附膠。此種溢出或附膠之抑制於提高伴隨燒結接合之半導體裝置等製造對象物中之良率方面較佳。 於本加熱接合用片材中，較佳為，黏著層對在70℃、0.5 MPa、及1秒之壓合條件下以5 mm見方之尺寸壓合有該黏著層之銀平面於23℃時的剪切接著力(第2剪切接著力)相對於黏著層對在70℃、0.5 MPa、及1秒之壓合條件下以5 mm見方之尺寸壓合有該黏著層之銀平面於70℃時的剪切接著力(第1剪切接著力)之比之值為5～40。於本加熱接合用片材中，將第1剪切接著力相對於第2剪切接著力之相對強度確保為常溫區域內之溫度23℃時之上述第2剪切接著力相對於暫時固定溫度區域內之溫度70℃時之上述第1剪切接著力的比之值落入5～40之範圍內之程度的構成於抑制上述晶片移動或位置偏移方面較佳。 於本加熱接合用片材中，黏著層對在50℃、0.5 MPa、及1秒之壓合條件下以5 mm見方之尺寸壓合有該黏著層之銀平面於50℃時的剪切接著力(第3剪切接著力)較佳為0.11 MPa以上。使用於燒結接合之加熱接合用材料介置於接合對象物間而進行之暫時固定之溫度條件如上所述般，例如為包含70℃及其左右之溫度範圍即50～90℃，第3剪切接著力為0.11 MPa以上之構成於抑制上述晶片移動或位置偏移方面較佳。 於本加熱接合用片材中，較佳為，黏著層對在50℃、0.5 MPa、及1秒之壓合條件下以5 mm見方之尺寸壓合有該黏著層之銀平面於50℃時的剪切接著力(第3剪切接著力)相對於黏著層對在70℃、0.5 MPa、及1秒之壓合條件下以5 mm見方之尺寸壓合有該黏著層之銀平面於70℃時的剪切接著力(第1剪切接著力)之比之值為1～40。本構成於在本加熱接合用片材中於暫時固定溫度區域內實現穩定之接著力方面較佳，因此，於抑制上述晶片移動或位置偏移方面較佳。 於本加熱接合用片材中，較佳為，黏著層對在90℃、0.5 MPa、及1秒之壓合條件下以5 mm見方之尺寸壓合有該黏著層之銀平面於90℃時的剪切接著力(第4剪切接著力)相對於黏著層對在70℃、0.5 MPa、及1秒之壓合條件下以5 mm見方之尺寸壓合有該黏著層之銀平面於70℃時的剪切接著力(第1剪切接著力)之比之值為1～40。本構成於在本加熱接合用片材中於暫時固定溫度區域內實現穩定之黏著力方面較佳，因此，於抑制上述晶片移動或位置偏移方面較佳。 於本加熱接合用片材中，較佳為黏著層之70℃時之黏度為5×103 ～1×107 Pa・s。此種構成於實現上述第1剪切接著力方面較佳。 於本加熱接合用片材中，較佳為，黏著層除含有導電性金屬之上述燒結性粒子外亦包含熱分解性高分子黏合劑。於本發明中，所謂熱分解性高分子黏合劑，係指可於燒結接合用之高溫加熱過程中進行熱分解之高分子黏合劑成分。根據此種構成，容易於上述暫時固定溫度、即包含70℃及其左右之溫度範圍即50～90℃下例如利用熱分解性高分子黏合劑之黏彈性性而確保黏著層之凝集力，因此，易於確保黏著層之接著力。因此，本構成於實現上述第1剪切接著力方面較佳。 於本加熱接合用片材中，較佳為，熱分解性高分子黏合劑之重量平均分子量為10000以上。此種構成於利用熱分解性高分子黏合劑之黏彈性性而確保黏著層之凝集力或接著力方面較佳。 於本加熱接合用片材中，較佳為，熱分解性高分子黏合劑為聚碳酸酯樹脂及/或丙烯酸系樹脂。如上所述，於使用用於燒結接合之加熱接合用材料來實現燒結接合之過程中，於利用該材料將接合對象物間暫時固定之後進行燒結接合用之高溫加熱。燒結接合用之高溫加熱例如係於包含300℃及其左右之溫度範圍進行，聚碳酸酯樹脂及丙烯酸系樹脂容易作為於300℃左右之溫度下進行分解、揮散之高分子黏合劑而準備。因此，本構成於在形成於使用本加熱接合用片材進行燒結接合之接合對象物間的燒結層中減少有機殘渣方面較佳。燒結層中之有機殘渣越少，則該燒結層有越強固之傾向，因此，於該燒結層中易於獲得優異之接合可靠性。 於本加熱接合用片材中，較佳為，燒結性粒子包含選自由銀、銅、氧化銀、及氧化銅所組成之群中之至少一種。此種構成於在使用本加熱接合用片材進行燒結接合之接合對象物間形成強固之燒結層方面較佳。 根據本發明之第2態樣，提供一種附加熱接合用片材之切割帶。該附加熱接合用片材之切割帶具備切割帶、及本發明之第1態樣之加熱接合用片材。切割帶具有包含基材及黏著劑層之積層構造。加熱接合用片材配置於切割帶中之黏著劑層上。此種構成之切割帶於半導體裝置之製造過程中可用於獲得帶有晶片尺寸之加熱接合用片材之半導體晶片。並且，根據本切割帶，於半導體裝置製造過程中之燒結接合中，關於本發明之第1態樣之加熱接合用片材，獲得與上述相同之效果。
圖1係本發明之一實施形態之加熱接合用片材10之局部剖面模式圖。加熱接合用片材10用以將接合對象物間燒結接合，且具備黏著層11。黏著層11至少包含含有導電性金屬之燒結性粒子、熱分解性高分子黏合劑、及低沸點黏合劑。此種加熱接合用片材10例如於半導體裝置之製造過程中，可用於將半導體晶片一面獲得與支持基板側之電性連接一面燒結接合於支持基板。 加熱接合用片材10或其黏著層11中所包含之燒結性粒子係含有導電性金屬元素且可燒結之粒子。作為導電性金屬元素，例如可列舉：金、銀、銅、鈀、錫、及鎳。作為此種燒結性粒子之構成材料，例如可列舉：金、銀、銅、鈀、錫、鎳、及選自該等之群中之兩種以上金屬之合金。作為燒結性粒子之構成材料，亦可列舉：氧化銀、或氧化銅、氧化鈀、氧化錫等金屬氧化物。又，燒結性粒子亦可為具有核殼結構之粒子。例如，燒結性粒子亦可為具有以銅為主成分之核、及以金或銀等為主成分且被覆核之殼的核殼結構之粒子。於本實施形態中，燒結性粒子較佳為包含選自由銀粒子、銅粒子、氧化銀粒子、及氧化銅粒子所組成之群中之至少一種。 燒結性粒子之平均粒徑就針對燒結性粒子實現較低之燒結溫度等確保良好之燒結性的觀點而言，較佳為1000 nm以下，更佳為800 nm以下，更佳為500 nm以下。就針對黏著層11或用以形成其之組合物中之燒結性粒子確保良好之分散性的觀點而言，燒結性粒子之平均粒徑較佳為10 nm以上，更佳為50 nm以上，更佳為100 nm以上。 燒結性粒子之平均粒徑可藉由使用掃描型電子顯微鏡(SEM)所進行之觀察而測量。關於包含燒結性粒子之黏著層中所包含之燒結性粒子之平均粒徑，具體而言，可藉由如下之方法進行測定。首先，於冷卻環境下對包含燒結性粒子之黏著層實施離子拋光而使黏著層之剖面露出。其次，使用場發射型掃描電子顯微鏡SU8020(Hitachi High-Technologies股份有限公司製造)拍攝該露出剖面，獲得反射電子像作為圖像資料。拍攝條件係將加速電壓設為5 kV，將倍率設為50000倍。其次，使用圖像解析軟體ImageJ對所獲得之圖像資料實施自動二值化處理，然後算出粒子之平均粒徑。 於使用銅粒子作為燒結性粒子之情形時，該銅粒子較佳為包含複數個微晶。並且，包含複數個微晶之銅粒子中，微晶直徑就針對燒結性粒子實現較低之燒結溫度等確保良好之燒結性的觀點而言，較佳為50 nm以下，更佳為45 nm以下。銅粒子中之微晶直徑設為使用X射線繞射裝置UltimaIV(Rigaku股份有限公司製造)進行該銅粒子之X射線繞射測定，使用所獲得之(111)波峰之值基於謝樂(Scherrer)法而算出之值。 黏著層11中之燒結性粒子之含有比率就實現可靠性較高之燒結接合的觀點而言，較佳為60～98質量%，更佳為65～97質量%，更佳為70～95質量%。 加熱接合用片材10或其黏著層11中所包含之熱分解性高分子黏合劑係可於燒結接合用之高溫加熱過程中進行熱分解之高分子黏合劑成分，其係於該加熱過程前有助於保持加熱接合用片材10或其黏著層11之片材形狀之要素。於本實施形態中，就保證片材形狀保持功能之觀點而言，熱分解性高分子黏合劑係於常溫(23℃)下為固體之材料。作為此種熱分解性高分子黏合劑，例如可列舉聚碳酸酯樹脂及丙烯酸系樹脂。 關於作為熱分解性高分子黏合劑之聚碳酸酯樹脂，例如可列舉：於主鏈之碳酸酯基(-O-CO-O-)間不包含苯環等芳香族化合物而包含脂肪族鏈之脂肪族聚碳酸酯、及於主鏈之碳酸酯基(-O-CO-O-)間包含芳香族化合物之芳香族聚碳酸酯。作為脂肪族聚碳酸酯，例如可列舉：聚碳酸乙二酯及聚碳酸丙二酯。作為芳香族聚碳酸酯，可列舉於主鏈包含雙酚A結構之聚碳酸酯。 關於作為熱分解性高分子黏合劑之丙烯酸系樹脂，例如可列舉具有碳數4～18之直鏈狀或支鏈狀之烷基之丙烯酸酯及/或甲基丙烯酸酯之聚合物。以下，由「(甲基)丙烯酸」表示「丙烯酸」及/或「甲基丙烯酸」。關於用以構成作為熱分解性高分子黏合劑之丙烯酸系樹脂之上述(甲基)丙烯酸酯之烷基，例如可列舉：甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、及十八烷基。 作為熱分解性高分子黏合劑之丙烯酸系樹脂亦可為包含源自上述(甲基)丙烯酸酯以外之其他單體之單體單元之聚合物。作為此種其他單體，例如可列舉：含羧基單體、酸酐單體、含羥基單體、含磺酸基單體、及含磷酸基單體。具體而言，作為含羧基單體，例如可列舉：丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、伊康酸、順丁烯二酸、反丁烯二酸、及丁烯酸。作為酸酐單體，例如可列舉：順丁烯二酸酐或伊康酸酐。作為含羥基單體，例如可列舉：(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、及(甲基)丙烯酸4-(羥基甲基)環己基甲酯。作為含磺酸基單體，例如可列舉：苯乙烯磺酸、丙烯磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙基酯、及(甲基)丙烯醯氧基萘磺酸。作為含磷酸基單體，例如可列舉2-羥基乙基丙烯醯基磷酸酯。 熱分解性高分子黏合劑之重量平均分子量較佳為10000以上。熱分解性高分子黏合劑之重量平均分子量設為利用凝膠滲透層析法(GPC)進行測定並藉由聚苯乙烯換算所算出之值。 黏著層11中之熱分解性高分子黏合劑之含有比率就適當展現上述片材形狀保持功能之觀點而言，較佳為0.5～40質量%，更佳為0.8～30質量%，更佳為1～20質量%。 加熱接合用片材10或其黏著層11中所包含之低沸點黏合劑係使用動態黏彈性測定裝置(商品名「HAAKE MARS III」、Thermo FISHER SCIENTFIC公司製造)所測定之23℃時之黏度表現1×105 Pa・s以下之液狀或半液狀者。於本黏度測定中，使用20 mm
Figure 02_image001
之平行板作為治具，將板間間隙設為100 μm，將旋轉剪切時之剪切速度設為1 s-1 。 作為黏著層11中所包含之低沸點黏合劑，例如可列舉：萜烯醇類、除萜烯醇類以外之醇類、伸烷基二醇烷基醚類、及除伸烷基二醇烷基醚類以外之醚類。作為萜烯醇類，例如可列舉：異𦯉基環己醇、香茅醇、香葉草醇、香茅醇、香芹醇、及α-松油醇。作為除萜烯醇類以外之醇類，例如可列舉：戊醇、己醇、庚醇、辛醇、1-癸醇、乙二醇、二乙二醇、丙二醇、丁二醇、及2,4-二乙基-1,5戊二醇。作為伸烷基二醇烷基醚類，例如可列舉：乙二醇丁醚、二乙二醇甲醚、二乙二醇乙醚、二乙二醇丁醚、二乙二醇異丁醚、二乙二醇己醚、三乙二醇甲醚、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇二丁醚、二乙二醇丁基甲基醚、二乙二醇異丙基甲基醚、三乙二醇二甲醚、三乙二醇丁基甲基醚、丙二醇丙醚、二丙二醇甲醚、二丙二醇乙醚、二丙二醇丙醚、二丙二醇丁醚、二丙二醇二甲醚、三丙二醇甲醚、及三丙二醇二甲醚。作為除伸烷基二醇烷基醚類以外之醚類，例如可列舉：乙二醇乙醚乙酸酯、乙二醇丁醚乙酸酯、二乙二醇乙醚乙酸酯、二乙二醇丁醚乙酸酯、二丙二醇甲醚乙酸酯、及乙二醇苯醚。作為黏著層11中所包含之低沸點黏合劑，可使用一種低沸點黏合劑，亦可使用兩種以上之低沸點黏合劑。作為黏著層11中所包含之低沸點黏合劑，就常溫下之穩定性之觀點而言，較佳為萜烯醇類，更佳為異𦯉基環己醇。 加熱接合用片材10或其黏著層11除含有以上之成分以外，亦可含有例如塑化劑等。 黏著層11之23℃時之厚度較佳為5 μm以上，更佳為10 μ以上，且較佳為100 μm以下，更佳為80 μm以下。又，黏著層11之70℃時之黏度(即，構成黏著層11之組合物之70℃時之黏度)較佳為5×103 ～1×107 Pa・s，更佳為1×104 ～1×106 Pa・s。 加熱接合用片材10或其黏著層11如上所述般至少包含含有導電性金屬之燒結性粒子、熱分解性高分子黏合劑、及低沸點黏合劑。具備與黏著層組成相關之此種構成之加熱接合用片材10係黏著層11對在70℃、0.5 MPa、及1秒之壓合條件(第1壓合條件)下以5 mm見方之尺寸壓合有該黏著層11之銀平面於70℃時的剪切接著力(第1剪切接著力)為0.1 MPa以上，較佳為0.12 MPa以上，更佳為0.14 MPa以上，更佳為0.16 MPa以上，更佳為0.18 MPa以上，更佳為0.2 MPa以上。於本實施形態中，剪切接著力設為於接著力測定對象物向剪切方向之位移速度為0.5 mm/秒之條件下之測定值。 於加熱接合用片材10中，黏著層11對在上述第1壓合條件下以5 mm見方之尺寸壓合有該黏著層11之銀平面於23℃時的剪切接著力(第2剪切接著力)相對於黏著層11對在相同之第1壓合條件下以5 mm見方之尺寸壓合有該黏著層11之銀平面於70℃時的上述第1剪切接著力之比之值較佳為5～40、更佳為6～30。 於加熱接合用片材10中，黏著層11對在50℃、0.5 MPa、及1秒之壓合條件(第2壓合條件)下以5 mm見方之尺寸壓合有該黏著層11之銀平面於50℃時的剪切接著力(第3剪切接著力)較佳為0.11 MPa以上，更佳為0.15 MPa以上。又，於加熱接合用片材10中，黏著層11對在上述第2壓合條件下以5 mm見方之尺寸壓合有該黏著層11之銀平面於50℃時的第3剪切接著力相對於黏著層11對在上述第1壓合條件下以5 mm見方之尺寸壓合有該黏著層11之銀平面於70℃時的第1剪切接著力之比之值較佳為1～40、更佳為6～30。 於加熱接合用片材10中，黏著層11對在90℃、0.5 MPa、及1秒之壓合條件(第3壓合條件)下以5 mm見方之尺寸壓合有該黏著層11之銀平面於90℃時的剪切接著力(第4剪切接著力)相對於黏著層11對在上述第1壓合條件下以5 mm見方之尺寸壓合有該黏著層11之銀平面於70℃時的第1剪切接著力之比之值較佳為1～40、更佳為6～30。 加熱接合用片材10或該黏著層11之接著力之調整例如可藉由與上述熱分解性高分子黏合劑相關之構成單體組成之調整或重量平均分子量的調整、上述低沸點黏合劑之選擇、黏著層11中之燒結性粒子或熱分解性高分子黏合劑、低沸點黏合劑等之各含量之調整、以及黏著層11之厚度之設定等進行。 加熱接合用片材10例如可藉由如下方式進行製作，即，於溶劑中將上述各成分混合而製備清漆，將該清漆塗佈於成為基材之隔離件之上而形成塗膜，並使該塗膜乾燥。作為清漆調整用之溶劑，可使用有機溶劑或醇溶劑。作為有機溶劑，例如可列舉：二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮、丙酮、甲基乙基酮、環己酮、甲苯、及二甲苯。作為醇溶劑，例如可列舉：乙二醇、二乙二醇、1,2-丙二醇、1,3-丙二醇、1,2-丁二醇、1,3-丁二醇、1,4-丁二醇、2-丁烯-1,4-二醇、1,2,6-己三醇、甘油、辛二醇、2-甲基-2,4-戊二醇、及松油醇。對於清漆在基材上之塗佈，例如可使用：模嘴塗佈機、凹版塗佈機、輥式塗佈機、反向塗佈機、缺角輪塗佈機、或管刮刀塗佈機(pipe doctor coater)。塗膜之乾燥溫度例如為70～160℃，塗膜之乾燥時間例如為1～5分鐘。又，作為基材或隔離件，可使用聚對苯二甲酸乙二酯(PET)膜、聚乙烯膜、聚丙烯膜、及由剝離劑(例如氟系剝離劑或丙烯酸長鏈烷基酯系剝離劑)進行表面塗佈後之各種塑膠膜或紙等。 圖2至圖4表示使用加熱接合用片材10而進行之半導體裝置製造方法之一部分步驟。 於本方法中，首先，如圖2(a)所示，準備加熱接合用片材10及複數個半導體晶片C。加熱接合用片材10係具有上述構成之黏著層11者，且於其單面帶有剝離襯墊L。複數個半導體晶片C之各者係已構築有特定之半導體元件者，且固著於晶片固定用膠帶T1之黏著面T1a上。於各半導體晶片C中，於貼附加熱接合用片材10之側之表面(於圖2中為圖中上表面)已形成有銀平面電極(省略圖示)作為外部電極。銀平面電極之厚度例如為10～1000 nm。該銀平面電極亦可積層形成於在半導體晶片表面形成之鈦薄膜之上。鈦薄膜之厚度例如為10～1000 nm。該等銀平面電極及鈦薄膜例如可藉由蒸鍍法形成。又，於各半導體晶片C之另一面(於圖2中為圖中下表面)視需要而形成有其他電極墊等(省略圖示)。 其次，如圖2(b)所示，對複數個半導體晶片C貼附加熱接合用片材10。具體而言，一面自剝離襯墊L之側將加熱接合用片材10向半導體晶片C側按壓，一面對複數個半導體晶片C貼附加熱接合用片材10或黏著層11。作為按壓機構，例如可列舉壓合輥。貼附溫度例如為50～90℃，貼附用之負荷例如為0.01～5 MPa。 其次，如圖2(c)所示，將剝離襯墊L自晶片固定用膠帶T1側剝離。藉此，將加熱接合用片材10或其黏著層11之各處轉印於各半導體晶片C之表面，從而獲得帶有晶片尺寸之加熱接合用片材10之半導體晶片C。 其次，如圖3(a)所示，進行半導體晶片C於支持基板S之暫時固定(暫時固定步驟)。具體而言，例如使用貼片機將附加熱接合用片材之半導體晶片C經由該加熱接合用片材10而暫時固定於支持基板S。作為支持基板S，例如可列舉：於表面帶有銅配線之絕緣電路基板、及引線框架。支持基板S中之晶片搭載部位可為銅配線或引線框架等之生坯表面，亦可為形成於生坯表面上之鍍覆膜之表面。作為該鍍覆膜，例如可列舉：鍍金膜、鍍銀膜、鍍鎳膜、鍍鈀膜、及鍍鉑膜。於在支持基板S之晶片搭載部位形成有例如鍍銀膜之情形時，該晶片搭載部位為銀平面。於本步驟中，暫時固定用之溫度條件例如為包含70℃及其左右之溫度範圍即50～90℃，按壓之負荷條件例如為0.01～5 MPa，接合時間例如為0.01～5秒。 其次，如圖3(b)所示，藉由經過高溫加熱過程而將半導體晶片C接合於支持基板S(加熱接合步驟)。具體而言，藉由經過特定之高溫加熱過程，而於支持基板S與半導體晶片C之間使黏著層11中之低沸點黏合劑揮發，使熱分解性高分子黏合劑進行熱分解而揮散，並且使燒結性粒子之導電性金屬燒結。藉此，於支持基板S與各半導體晶片C之間形成燒結層12，將半導體晶片C一面獲得與支持基板S側之電性連接一面接合於支持基板S。於本步驟中，加熱接合之溫度條件例如為包含300℃及其左右之200～400℃，較佳為330～350℃。加熱接合之壓力條件例如為0.05～40 MPa，較佳為0.1～20 MPa。又，加熱接合之接合時間較佳為0.3～300分鐘，更佳為0.5～240分鐘，更佳為1～180分鐘。例如於該等條件之範圍內，適當設定用以實施加熱接合步驟之溫度分佈或壓力分佈。如上所述之加熱接合步驟可使用能夠同時進行加熱與加壓之裝置而進行。作為此種裝置，例如可列舉：覆晶接合機及平行平板加壓機。又，就參與燒結接合之金屬之抗氧化之觀點而言，本步驟較佳為於氮氣氛圍下、減壓下、或還原氣體氛圍下之任一環境下進行。 於半導體裝置之製造中，其次，如圖4(a)所示，視需要經由接合線W將半導體晶片C之上述電極墊(省略圖示)與支持基板S所具有之端子部(省略圖示)電性連接(打線接合步驟)。半導體晶片C之電極墊或支持基板S之端子部與接合線W之接線例如藉由伴隨加熱之超音波焊接而實現。作為接合線W，例如可使用金線、鋁線、或銅線。打線接合中之線加熱溫度例如為80～250℃，較佳為80～220℃。又，其加熱時間為數秒～數分鐘。 其次，如圖4(b)所示，形成用以保護支持基板S上之半導體晶片C或接合線W之密封樹脂R(密封步驟)。於本步驟中，例如藉由使用模具所進行之轉注成形技術形成密封樹脂R。作為密封樹脂R之構成材料，例如可使用環氧系樹脂。於本步驟中，用以形成密封樹脂R之加熱溫度例如為165～185℃，加熱時間例如為60秒～數分鐘。於在本步驟(密封步驟)中未充分進行密封樹脂R之硬化之情形時，於本步驟之後進行用以使密封樹脂R完全硬化之後硬化步驟。 能以如上之方式經過使用加熱接合用片材10之過程而製造半導體裝置。 圖5係本發明之一實施形態之附加熱接合用片材之切割帶X的剖面模式圖。附加熱接合用片材之切割帶X係具有包含本發明之一實施形態之上述加熱接合用片材10與切割帶20的積層構造，且於半導體裝置之製造中可用於獲得帶有晶片尺寸之加熱接合用片材之半導體晶片者。又，附加熱接合用片材之切割帶X具有與半導體裝置之製造過程中之加工對象之半導體晶圓對應之尺寸之例如圓盤形狀。 切割帶20具有包含基材21及黏著劑層22之積層構造。 切割帶20之基材21係於切割帶20或加熱接合用片材10中作為支持體而發揮功能之要素。基材21例如可適當使用塑膠基材(尤其是塑膠膜)。作為該塑膠基材之構成材料，例如可列舉：聚氯乙烯、聚偏二氯乙烯、聚烯烴、聚酯、聚胺基甲酸酯、聚碳酸酯、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯硫醚、芳香族聚醯胺、氟樹脂、纖維素系樹脂、及聚矽氧樹脂。作為聚烯烴，例如可列舉：低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯、乙烯-乙酸乙烯酯共聚合物、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚合物、乙烯-(甲基)丙烯酸酯共聚合物、乙烯-丁烯共聚合物、及乙烯-己烯共聚合物。作為聚酯，例如可列舉：聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯、及聚對苯二甲酸丁二酯(PBT)。基材21可包含一種材料，亦可包含兩種以上之材料。基材21可具有單層構造，亦可具有多層構造。於基材21上之黏著劑層22如下所述般為紫外線硬化型之情形時，基材21較佳為具有紫外線透過性。又，基材21於為塑膠膜之情形時，可為無延伸膜，可為單軸延伸膜，亦可為雙軸延伸膜。 基材21中之黏著劑層22側之表面亦可實施用以提高與黏著劑層22之密接性的處理。作為此種處理，例如可列舉：電暈放電處理、電漿處理、鋪砂加工處理、臭氧暴露處理、火焰暴露處理、高壓電擊暴露處理、及離子化輻射處理等物理處理、鉻酸處理等化學處理、及底塗處理。 基材21之厚度就確保基材21用於作為切割帶20或附加熱接合用片材之切割帶X中之支持體而發揮功能之強度的觀點而言，較佳為40 μm以上，更佳為50 μm以上，更佳為55 μm以上，更佳為60 μm以上。又，就於切割帶20或附加熱接合用片材之切割帶X中實現適度之可撓性之觀點而言，基材21之厚度較佳為200 μm以下，更佳為180 μm以下，更佳為150 μm以下。 切割帶20之黏著劑層22含有黏著劑。作為黏著劑，例如可使用以丙烯酸系聚合物為基礎聚合物之丙烯酸系黏著劑或橡膠系黏著劑。又，該黏著劑可為能夠藉由加熱或輻射照射等來自外部之作用而刻意使黏著力降低之黏著劑(黏著力降低型黏著劑)，亦可為黏著力基本上或完全不因來自外部之作用而降低之黏著劑(黏著力非降低型黏著劑)。作為黏著力降低型黏著劑，例如可列舉輻射硬化型黏著劑(具有輻射硬化性之黏著劑)或加熱發泡型黏著劑。作為黏著力非降低型黏著劑，例如可列舉感壓型黏著劑。 於黏著劑層22含有丙烯酸系黏著劑之情形時，作為該丙烯酸系黏著劑之基礎聚合物之丙烯酸系聚合物較佳為將源自丙烯酸烷基酯及/或甲基丙烯酸烷基酯之單體單元作為按質量比率最多之單體單元而包含。以下，由「(甲基)丙烯酸」表示「丙烯酸」及/或「甲基丙烯酸」。 作為用以構成丙烯酸系聚合物之單體單元之(甲基)丙烯酸烷基酯，例如可列舉：具有直鏈狀或支鏈狀之烷基之(甲基)丙烯酸烷基酯、及(甲基)丙烯酸環烷基酯。作為(甲基)丙烯酸烷基酯，例如可列舉：(甲基)丙烯酸之甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、或二十烷基酯。作為(甲基)丙烯酸環烷基酯，例如可列舉(甲基)丙烯酸之環戊酯或環己酯。作為用於丙烯酸系聚合物之(甲基)丙烯酸烷基酯，可使用一種(甲基)丙烯酸烷基酯，亦可使用兩種以上之(甲基)丙烯酸烷基酯。用以形成丙烯酸系聚合物之全單體成分中之(甲基)丙烯酸烷基酯之比率於使利用(甲基)丙烯酸烷基酯所得之黏著性等基本特性於黏著劑層22中適當展現的方面而言，例如為50質量%以上。 丙烯酸系聚合物亦可包含源自能夠與(甲基)丙烯酸烷基酯發生共聚之其他單體之單體單元以改質其凝集力或耐熱性等。作為此種單體成分，例如可列舉：含羧基單體、酸酐單體、含羥基單體、含磺酸基單體、含磷酸基單體、丙烯醯胺、及丙烯腈。作為含羧基單體，例如可列舉：丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、伊康酸、順丁烯二酸、反丁烯二酸、及丁烯酸。作為酸酐單體，例如可列舉順丁烯二酸酐及伊康酸酐。作為含羥基單體，例如可列舉：(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、及(甲基)丙烯酸4-(羥基甲基)環己基甲酯。作為含磺酸基單體，例如可列舉：苯乙烯磺酸、丙烯磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙基酯、及(甲基)丙烯醯氧基萘磺酸。作為含磷酸基單體，例如可列舉磷酸2-羥基乙基丙烯醯基酯。作為用於丙烯酸系聚合物之該其他單體，可使用一種單體，亦可使用兩種以上之單體。用以形成丙烯酸系聚合物之全單體成分中之(甲基)丙烯酸烷基酯以外之單體成分之比率於使利用(甲基)丙烯酸烷基酯所得之黏著性等基本特性於黏著劑層22中適當展現的方面而言，例如為50質量%以下。 丙烯酸系聚合物亦可包含源自能夠與(甲基)丙烯酸烷基酯共聚之多官能性單體之單體單元以於其聚合物骨架中形成交聯結構。作為此種多官能性單體，例如可列舉：己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯、(甲基)丙烯酸縮水甘油酯、聚酯(甲基)丙烯酸酯、及(甲基)丙烯酸胺基甲酸酯。作為用於丙烯酸系聚合物之多官能性單體，可使用一種多官能性單體，亦可使用兩種以上之多官能性單體。用以形成丙烯酸系聚合物之全單體成分中之多官能性單體之比率於使利用(甲基)丙烯酸烷基酯所得之黏著性等基本特性於黏著劑層22中適當展現的方面而言，例如為40質量%以下。 丙烯酸系聚合物係可使用以將其形成之原料單體聚合而獲得。作為聚合方法，例如可列舉：溶液聚合、乳化聚合、塊狀聚合、及懸浮聚合。就使用切割帶20或附加熱接合用片材之切割帶X之半導體裝置製造方法中之高度之清潔性的觀點而言，切割帶20或附加熱接合用片材之切割帶X中之黏著劑層22中之低分子量物質較少者更佳，丙烯酸系聚合物之數量平均分子量例如為10萬以上。 黏著劑層22或用以將其構成之黏著劑例如亦可含有外部交聯劑以提高丙烯酸系聚合物等基礎聚合物之數量平均分子量。作為用以與丙烯酸系聚合物等基礎聚合物反應而形成交聯結構之外部交聯劑，可列舉：聚異氰酸酯化合物、環氧化合物、氮丙啶化合物、及三聚氰胺系交聯劑。黏著劑層22或用以將其構成之黏著劑中之外部交聯劑之含量相對於基礎聚合物100質量份例如為5質量份以下。 黏著劑層22亦可為藉由受到紫外線等輻射之照射而照射位置之交聯度提高黏著力下降之輻射硬化型黏著劑層。作為用以構成此種黏著劑層之輻射硬化型黏著劑，例如可列舉添加型輻射硬化型黏著劑，該添加型輻射硬化型黏著劑含有上述丙烯酸系黏著劑或橡膠系黏著劑等基礎聚合物、及具有輻射聚合性之碳-碳雙鍵等官能基之輻射聚合性之單體成分或低聚物成分。 作為輻射聚合性之單體成分，例如可列舉：(甲基)丙烯酸胺基甲酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、及1,4-丁二醇二(甲基)丙烯酸酯。作為輻射聚合性之低聚物成分，例如可列舉：胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種低聚物，分子量100～30000左右者適當。黏著劑層22或用以將其構成之輻射硬化型黏著劑中之輻射聚合性之單體成分或低聚物成分之含量係於可使所形成之黏著劑層22之黏著力適當下降的範圍內決定，相對於丙烯酸系聚合物等基礎聚合物100質量份例如為40～150質量份。又，作為添加型輻射硬化型黏著劑，例如亦可使用於日本專利特開昭60-196956號公報中揭示者。 作為用以構成黏著劑層22之輻射硬化型黏著劑，例如亦可列舉固有型輻射硬化型黏著劑，該固有型輻射硬化型黏著劑含有於聚合物側鏈或聚合物主鏈中、聚合物主鏈末端具有輻射聚合性之碳-碳雙鍵等官能基之基礎聚合物。此種固有型輻射硬化型黏著劑於抑制因所形成之黏著劑層22內之低分子量成分之移動所導致之黏著特性之非意圖之經時性變化的方面較佳。 作為固有型輻射硬化型黏著劑中所含有之基礎聚合物，較佳為以丙烯酸系聚合物為基本骨架者。作為構成此種基本骨架之丙烯酸系聚合物，可採用上述丙烯酸系聚合物。作為輻射聚合性之碳-碳雙鍵向丙烯酸系聚合物之導入方法，例如可列舉如下方法，即，於使包含具有特定之官能基(第1官能基)之單體的原料單體共聚合而獲得丙烯酸系聚合物之後，使具有可於與第1官能基之間發生反應而鍵結之特定之官能基(第2官能基)及輻射聚合性碳-碳雙鍵之化合物於維持碳-碳雙鍵之輻射聚合性之狀態下對丙烯酸系聚合物發生縮合反應或加成反應。 作為第1官能基與第2官能基之組合，例如可列舉：羧基與環氧基、環氧基與羧基、羧基與氮丙啶基、氮丙啶基與羧基、羥基與異氰酸基、異氰酸基與羥基。該等組合之中，就追蹤反應之容易度之觀點而言，較佳為羥基與異氰酸基之組合、及異氰酸基與羥基之組合。又，製作具有反應性較高之異氰酸基之聚合物之技術難易度較高，就丙烯酸系聚合物之製作或獲得之容易性之觀點而言，更佳為丙烯酸系聚合物側之上述第1官能基為羥基且上述第2官能基為異氰酸基之情況。於該情形時，作為同時具有輻射聚合性碳-碳雙鍵及作為第2官能基之異氰酸基之異氰酸酯化合物，例如可列舉：異氰酸甲基丙烯醯基酯、異氰酸2-甲基丙烯醯氧基乙酯、及異氰酸間異丙烯基-α,α-二甲基苄基酯。又，作為帶有第1官能基之丙烯酸系聚合物，較佳為包含源自上述含羥基單體之單體單元者，較佳亦為包含源自2-羥基乙基乙烯醚、或4-羥基丁基乙烯醚、二乙二醇單乙烯醚等醚系化合物之單體單元者。 用以構成黏著劑層22之輻射硬化型黏著劑較佳為含有光聚合起始劑。作為光聚合起始劑，例如可列舉：α-酮醇系化合物、苯乙酮系化合物、安息香醚系化合物、縮酮系化合物、芳香族磺醯氯系化合物、光活性肟系化合物、二苯甲酮系化合物、9-氧硫𠮿
Figure 107109598-A0304-12-01
系化合物、樟腦醌、鹵代酮、醯基膦氧化物、及醯基磷酸酯。作為α-酮醇系化合物，例如可列舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、及1-羥基環己基苯基酮。作為苯乙酮系化合物，例如可列舉：甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、及2-甲基-1-[4-(甲硫基)-苯基]-2-嗎啉基丙烷-1。作為安息香醚系化合物，例如可列舉：安息香乙醚、安息香異丙醚、及大茴香偶姻甲醚。作為縮酮系化合物，例如可列舉：苯偶醯二甲基縮酮。作為芳香族磺醯氯系化合物，例如可列舉2-萘磺醯氯。作為光活性肟系化合物，例如可列舉：1-苯酮-1,2-丙烷二酮-2-(O-乙氧羰基)肟。作為二苯甲酮系化合物，例如可列舉：二苯甲酮、苯甲醯苯甲酸、及3,3'-二甲基-4-甲氧基二苯甲酮。作為9-氧硫
Figure 107109598-A0304-12-01
系化合物，例如可列舉：9-氧硫
Figure 107109598-A0304-12-01
、2-氯9-氧硫
Figure 107109598-A0304-12-01
、2-甲基9-氧硫𠮿
Figure 107109598-A0304-12-01
、2,4-二甲基9-氧硫𠮿
Figure 107109598-A0304-12-01
、異丙基9-氧硫𠮿
Figure 107109598-A0304-12-01
、2,4-二氯9-氧硫𠮿
Figure 107109598-A0304-12-01
、2,4-二乙基9-氧硫𠮿
Figure 107109598-A0304-12-01
、及2,4-二異丙基9-氧硫𠮿
Figure 107109598-A0304-12-01
。用以構成黏著劑層22之輻射硬化型黏著劑中之光聚合起始劑之含量相對於丙烯酸系聚合物等基礎聚合物100質量份例如為0.05～20質量份。 於黏著劑層22或用以構成其之黏著劑中，除了以上成分以外，亦可含有交聯促進劑、黏著賦予劑、抗老化劑、顏料或染料等著色劑等添加劑。著色劑亦可為受到輻射照射而著色之化合物。作為此種化合物，例如可列舉隱色染料。 黏著劑層22之厚度就黏著劑層22之輻射硬化之前後之對加熱接合用片材10之接著力之平衡的觀點而言，例如於本實施形態中為1～50 μm。 具有如上所述之構成之附加熱接合用片材之切割帶X例如能以如下方式進行製作。 關於附加熱接合用片材之切割帶X之切割帶20，可藉由在準備之基材21上設置黏著劑層22而製作。例如樹脂製之基材21可藉由軋光機製膜法、有機溶劑中之澆鑄法、密閉系統中之吹脹擠壓法、T型模頭擠壓法、共擠壓法、乾式層壓法等製膜方法進行製作。黏著劑層22可藉由如下之方式形成，即，於製備黏著劑層22形成用之黏著劑組合物之後，將該黏著劑組合物塗佈於基材21上或特定之隔離件(即剝離襯墊)上而形成黏著劑組合物層，視需要對該黏著劑組合物層進行脫溶劑等(此時，視需要使其進行加熱交聯)。作為黏著劑組合物之塗佈方法，例如可列舉：輥式塗佈、網版塗佈、及凹版塗佈。用於黏著劑組合物層之脫溶劑等之溫度例如為80～150℃，且時間例如為0.5～5分鐘。於在隔離件上形成黏著劑層22之情形時，使帶有該隔離件之黏著劑層22貼合於基材21。能以如上之方式製作切割帶20。 關於附加熱接合用片材之切割帶X之加熱接合用片材10，可藉由如下之方式進行製作，於製備加熱接合用片材10形成用之組合物之後，將該組合物塗佈於特定之隔離件上而形成組合物層，並使該組合物層乾燥。作為接著劑組合物之塗佈方法，例如可列舉：輥式塗佈、網版塗佈、及凹版塗佈。用於組合物層之乾燥之溫度例如為70～160℃，且時間例如為1～5分鐘。 於附加熱接合用片材之切割帶X之製作中，其次，將加熱接合用片材10例如壓合而貼合於切割帶20之黏著劑層22側。貼合溫度例如為30～50℃。貼合壓力(線壓)例如為0.1～20 kgf/cm。於黏著劑層22為如上所述之輻射硬化型黏著劑層之情形時，其次，例如亦可自基材21之側對黏著劑層22照射紫外線等輻射。照射量例如為50～500 mJ，較佳為100～300 mJ。於附加熱接合用片材之切割帶X中進行作為黏著劑層22之黏著力下降處理方法之照射之區域(照射區域D)例如為黏著劑層22中之加熱接合用片材貼合區域內之除其周緣部以外的區域。 能以如上之方式製作例如圖5所示之附加熱接合用片材之切割帶X。亦可於附加熱接合用片材之切割帶X以被覆帶有加熱接合用片材10之黏著劑層22之方式設置有隔離件(省略圖示)。隔離件係用於以黏著劑層22及加熱接合用片材10不露出之方式進行保護之要素，於使用附加熱接合用片材之切割帶X之前自該膜剝離。作為隔離件，可使用聚對苯二甲酸乙二酯(PET)膜、聚乙烯膜、聚丙烯膜、及由剝離劑(例如氟系剝離劑或丙烯酸長鏈烷基酯系剝離劑)進行表面塗佈後之各種塑膠膜或紙等。 圖6表示使用附加熱接合用片材之切割帶X而進行之半導體裝置製造方法之一部分的步驟。 於本方法中，首先如圖6(a)所示，將半導體晶圓30貼合於附加熱接合用片材之切割帶X之加熱接合用片材10上。具體而言，一面藉由壓合輥等將半導體晶圓30按壓於加熱接合用片材10側，一面對附加熱接合用片材之切割帶X或其加熱接合用片材10貼附半導體晶圓30。半導體晶圓30係已構築有複數個半導體元件者，且於貼附在加熱接合用片材10之側之表面(於圖6中為圖中下表面)已經形成有銀平面電極(省略圖示)作為外部電極。銀平面電極之厚度例如為10～1000 nm。該銀平面電極亦可積層形成於在半導體晶圓表面形成之鈦薄膜之上。鈦薄膜之厚度例如為10～1000 nm。該等銀平面電極及鈦薄膜例如可藉由蒸鍍法形成。又，於半導體晶圓30之另一面(於圖6中為圖中下表面)於每個半導體元件視需要形成有另一電極墊等(省略圖示)。於本步驟中，貼附溫度例如為50～90℃，貼附用之負荷例如為0.01～10 MPa。於附加熱接合用片材之切割帶X中之黏著劑層22為輻射硬化型黏著劑層之情形時，亦可於半導體晶圓30貼合於附加熱接合用片材之切割帶X之後自基材21之側對黏著劑層22照射紫外線等輻射，而代替附加熱接合用片材之切割帶X之製造過程中之上述輻射照射。照射量例如為50～500 mJ，較佳為100～300 mJ。於附加熱接合用片材之切割帶X中進行作為黏著劑層22之黏著力下降處理方法之照射之區域(於圖5中設為照射區域D而表示)例如為黏著劑層22中之加熱接合用片材貼合區域內之除其周緣部以外的區域。 其次，如圖6(b)所示，對半導體晶圓30進行切晶。具體而言，於將半導體晶圓30保持於附加熱接合用片材之切割帶X之狀態下，使用切晶裝置等旋轉切刀對半導體晶圓30進行切晶而單片化為半導體晶片單元(於圖中，由粗實線模式性地表示切斷位置)。藉此，形成帶有晶片尺寸之加熱接合用片材10之半導體晶片C。 並且，視需要經過使用水等清洗液清洗帶有附加熱接合用片材之半導體晶片C之切割帶20中之半導體晶片C側的清潔步驟，之後自切割帶20拾取附加熱接合用片材之半導體晶片C(拾取步驟)。例如，針對拾取對象之附加熱接合用片材之半導體晶片C，於切割帶20之圖中下側使拾取機構之銷構件(省略圖示)上升並介隔切割帶20將其頂起，之後由吸附治具(省略圖示)吸附保持。 其次，如圖3(a)所示，進行半導體晶片C於支持基板S之暫時固定(暫時固定步驟)，如圖3(b)所示，藉由經過高溫加熱過程而將半導體晶片C接合於支持基板S(加熱接合步驟)。關於該等步驟之具體之實施態樣及具體之條件，與使用加熱接合用片材10而進行之半導體裝置製造方法中之暫時固定步驟及加熱接合步驟相關，參照圖3(a)及圖3(b)與上述相同。 其次，如圖4(a)所示，視需要經由接合線W將半導體晶片C之上述電極墊(省略圖示)與支持基板S所具有之端子部(省略圖示)電性連接(打線接合步驟)。其次，如圖4(b)所示，形成用以保護支持基板S上之半導體晶片C或接合線W之密封樹脂R(密封步驟)。關於該等步驟之具體之實施態樣及具體之條件，與使用加熱接合用片材10而進行之半導體裝置製造方法中之暫時固定步驟及加熱接合步驟相關，參照圖4(a)及圖4(b)與上述相同。 能以如上之方式經過使用附加熱接合用片材之切割帶X之過程而製造半導體裝置。 於上述加熱接合用片材10中，黏著層11對在上述第1壓合條件(70℃、0.5 MPa、1秒)下以5 mm見方之尺寸壓合有該黏著層11之銀平面於70℃時的第1剪切接著力如上所述般為0.1 MPa以上，較佳為0.12 MPa以上，更佳為0.14 MPa以上，更佳為0.16 MPa以上，更佳為0.18 MPa以上，更佳為0.2 MPa以上。此種構成於如上所述般使用加熱接合用片材10將半導體晶片C燒結接合於支持基板S之情形時，抑制於在支持基板S與半導體晶片C之間介置有加熱接合用片材10之狀態下將半導體晶片C壓合於支持基板S之暫時固定時於該半導體晶片C產生晶片移動即位置偏移，於此方面較佳。暫時固定時之此種位置偏移之抑制於防止伴隨超出容許範圍之位置偏移而將半導體晶片C燒結接合於支持基板S的方面較佳，因此，於提高作為製造對象物之半導體裝置之良率之方面較佳。 又，加熱接合用片材10係將用於燒結接合之加熱接合用材料以易於以均勻之厚度製作之片材之形態，而非糊膠之形態供給者，因此，根據加熱接合用片材10，可藉由厚度均勻之燒結層12將支持基板S與半導體晶片C接合。利用厚度均勻之燒結層12所進行之燒結接合於實現半導體晶片C對支持基板S之較高之接合可靠性的方面較佳。 此外，加熱接合用片材10係將用於燒結接合之加熱接合用材料以不易流動化之片材之形態，而非易流動化之糊膠之形態供給者，因此，適於一面抑制燒結金屬自作為接合對象物之支持基板S與半導體晶片C之間之溢出或燒結金屬於半導體晶片C之附膠，一面將半導體晶片C燒結接合於支持基板S。此種溢出或附膠之抑制於提高伴隨燒結接合之半導體裝置中之良率之方面較佳。 於加熱接合用片材10中，如上所述，黏著層11對在第1壓合條件(70℃、0.5 MPa、1秒)下以5 mm見方之尺寸壓合有該黏著層11之銀平面於23℃時的第2剪切接著力相對於黏著層11對在第1壓合條件(70℃、0.5 MPa、1秒)下以5 mm見方之尺寸壓合有該黏著層11之銀平面於70℃時的第1剪切接著力之比之值較佳為5～40。於加熱接合用片材10中，將第1剪切接著力相對於第2剪切接著力之相對強度確保為常溫區域內之溫度23℃時之上述第2剪切接著力相對於暫時固定溫度區域內之溫度70℃時之上述第1剪切接著力的比之值落入5～40之範圍內之程度之構成於抑制上述晶片移動或位置偏移之方面較佳。 於加熱接合用片材10中，如上所述，黏著層11對在第2壓合條件(50℃、0.5 MPa、1秒)下以5 mm見方之尺寸壓合有該黏著層11之銀平面於50℃時的第3剪切接著力較佳為0.11 MPa以上。上述暫時固定步驟之溫度條件如上所述般例如為50～90℃，此種前提下，第3剪切接著力為0.11 MPa以上之構成於抑制上述晶片移動或位置偏移方面較佳。 於加熱接合用片材10中，如上所述，黏著層11對在第2壓合條件(50℃、0.5 MPa、1秒)下以5 mm見方之尺寸壓合有該黏著層11之銀平面於50℃時的第3剪切接著力相對於黏著層11對在第1壓合條件(70℃、0.5 MPa、1秒)下以5 mm見方之尺寸壓合有該黏著層11之銀平面於70℃時的第1剪切接著力之比之值較佳為1～40。此種構成於在加熱接合用片材10中於暫時固定溫度區域內實現穩定之接著力方面較佳，因此，於抑制上述晶片移動或位置偏移方面較佳。 於加熱接合用片材10中，如上所述，黏著層11對在第3壓合條件(90℃、0.5 MPa、1秒)下以5 mm見方之尺寸壓合有該黏著層11之銀平面於90℃時的剪切接著力(第4剪切接著力)相對於黏著層11對在第1壓合條件(70℃、0.5 MPa、1秒)下以5 mm見方之尺寸壓合有該黏著層11之銀平面於70℃時的第1剪切接著力之比之值較佳為1～40。此種構成於在加熱接合用片材10中於暫時固定溫度區域內實現穩定之黏著力方面較佳，因此，於抑制上述晶片移動或位置偏移方面較佳。 加熱接合用片材10或黏著層11於70℃時之黏度如上所述般較佳為5×103 ～1×107 Pa・s。此種構成於實現上述第1剪切接著力方面較佳。 加熱接合用片材10或黏著層11如上所述般較佳為將熱分解性高分子黏合劑與含有導電性金屬之上述燒結性粒子一同包含，且該熱分解性高分子黏合劑之重量平均分子量較佳為10000以上。根據該等構成，容易於上述暫時固定步驟中之暫時固定溫度、即包含70℃及其左右之溫度範圍即50～90℃下例如利用熱分解性高分子黏合劑之黏彈性性而確保黏著層11之凝集力，因此，易於確保黏著層11之接著力。因此，該等構成於實現上述第1剪切接著力方面較佳。 加熱接合用片材10或黏著層11中所包含之熱分解性高分子黏合劑如上所述般較佳為聚碳酸酯樹脂及/或丙烯酸系樹脂。聚碳酸酯樹脂及丙烯酸系樹脂容易作為於300℃左右之溫度下進行分解、揮散之高分子黏合劑而準備，因此，該構成於在形成在使用加熱接合用片材10進行燒結接合之支持基板S與半導體晶片C之間之燒結層12中降低有機殘渣方面較佳。燒結層12中之有機殘渣越少，則該燒結層12有越強固之傾向，因此，於該燒結層12中易於獲得優異之接合可靠性。 [實施例] [實施例1] 使用混合攪拌機(商品名「HM-500」、基恩士股份有限公司製造)以其攪拌模式將作為燒結性粒子之銀微粒子(平均粒徑100 nm、DOWA Electronics股份有限公司製造)225質量份、作為熱分解性高分子黏合劑之聚碳酸酯樹脂(商品名「QPAC40」、重量平均分子量為150000、常溫下為固體、Empower Materials公司製造)25質量份、作為低沸點黏合劑之異𦯉基環己醇(商品名「Terusolve MTPH」、常溫下為液體、Nippon Terpene化學工業股份有限公司製造)16質量份、及作為溶劑之甲基乙基酮10質量份混合，從而製備清漆。攪拌時間設為3分鐘。然後，將所獲得之清漆塗佈於脫模處理膜(商品名「MRA50」、三菱樹脂股份有限公司製造)，之後使其乾燥而形成厚度40 μm之黏著層。乾燥溫度設為110℃，乾燥時間設為3分鐘。如上所述，製作具有包含燒結性粒子、熱分解性高分子黏合劑、及低沸點黏合劑之黏著層的實施例1之加熱接合用片材。將與實施例1之加熱接合用片材相關之組成記載於表1(下述實施例及比較例亦相同；又，於表1中，表示組成之各數值之單位為相對之「質量份」)。 [實施例2] 使用25質量份之丙烯酸系樹脂(商品名「MM2002-1」、重量平均分子量為170000、常溫下為固體、藤倉化成股份有限公司)代替聚碳酸酯樹脂作為熱分解性高分子黏合劑，除此以外，以與實施例1之加熱接合用片材相同之方式製作實施例2之加熱接合用片材。 [實施例3] 使用335質量份之銅微粒子(平均粒徑200 μm、三井金屬礦業股份有限公司)代替作為燒結性粒子之銀微粒子，並使用38質量份之丙烯酸系樹脂(商品名「MM2002-1」、重量平均分子量為170000、常溫下為固體、藤倉化成股份有限公司)代替聚碳酸酯樹脂作為熱分解性高分子黏合劑，除此以外，以與實施例1之加熱接合用片材相同之方式製作實施例3之加熱接合用片材。 [比較例1] 使用25質量份之低分子之1-十八烷醇(分子量270.49、常溫下為固體)代替聚碳酸酯樹脂作為常溫下為固體之黏合劑，除此以外，以與實施例1之加熱接合用片材相同之方式製作比較例1之加熱接合用片材。 ＜70℃時之接著力測定＞ 針對實施例1～3及比較例1之各加熱接合用片材，研究70℃時之接著力。具體而言，首先，使用具備壓合輥之貼合機對在一面形成有作為蒸鍍膜之銀平面電極(5 mm見方)之矽晶片(5 mm見方)之該銀平面電極貼附加熱接合用片材。貼附溫度為70℃，壓合輥之速度為10 mm/秒，貼附用之負荷(壓合輥之壓力)為0.5 MPa。以此方式獲得於單面帶有5 mm見方之加熱接合用片材或黏著層之矽晶片。其次，使用黏晶裝置(商品名「黏晶機SPA-300」、新川股份有限公司製造)將所獲得之附加熱接合用片材之矽晶片壓合於鍍銀銅板(20 mm見方)而暫時固定。該銅板係實施鍍銀而於表面帶有銀平面者，於本步驟中，經由加熱接合用片材將矽晶片暫時固定於該銀平面。於該暫時固定中，壓合溫度為70℃，壓合壓力為0.5 MPa，壓合時間為1秒。然後，使用剪切接著力測定裝置(商品名「DAGE4000」、Dage公司)對壓合於鍍銀銅板之加熱接合用片材測定剪切接著力(第1剪切接著力)。測定溫度為70℃，向剪切方向推動附加熱接合用片材之矽晶片之工具之速度為0.5 mm/秒。對每個加熱接合用片材將第1剪切接著力之測定值(MPa)記載於表1。 ＜23℃時之接著力測定＞ 針對實施例1～3及比較例1之各加熱接合用片材，研究23℃時之接著力。具體而言，首先，使用具備壓合輥之貼合機對在一面形成有作為蒸鍍膜之銀平面電極(5 mm見方)之矽晶片(5 mm見方)之該銀平面電極貼附加熱接合用片材。貼附溫度為70℃，壓合輥之速度為10 mm/秒，貼附用之負荷(壓合輥之壓力)為0.5 MPa。以此方式獲得於單面帶有5 mm見方之加熱接合用片材或黏著層之矽晶片。其次，使用黏晶裝置(商品名「黏晶機SPA-300」、新川股份有限公司製造)將所獲得之附加熱接合用片材之矽晶片壓合於鍍銀銅板(20 mm見方)而暫時固定。該銅板係實施鍍銀而於表面帶有銀平面者，於本步驟中，經由加熱接合用片材將矽晶片暫時固定於該銀平面。於該暫時固定中，壓合溫度為70℃，壓合壓力為0.5 MPa，壓合時間為1秒。然後，使用剪切接著力測定裝置(商品名「DAGE4000」、Dage公司)對壓合於鍍銀銅板之加熱接合用片材測定剪切接著力(第2剪切接著力)。測定溫度為23℃，向剪切方向推動附加熱接合用片材之矽晶片之工具之速度為0.5 mm/秒。對每個加熱接合用片材將第2剪切接著力之測定值(MPa)記載於表1。 ＜晶片移動性(200℃)＞ 針對實施例1～3及比較例1之各加熱接合用片材，研究附有特定高溫加熱之情形時之晶片移動之有無。具體而言，首先，使用具備壓合輥之貼合機對在一面形成有作為蒸鍍膜之銀平面電極(5 mm見方)之矽晶片(5 mm見方)之該銀平面電極貼附加熱接合用片材。貼附溫度為70℃，壓合輥之速度為10 mm/秒，貼附用之負荷(壓合輥之壓力)為0.5 MPa。以此方式獲得於單面帶有5 mm見方之加熱接合用片材或黏著層之矽晶片。其次，使用黏晶裝置(商品名「黏晶機SPA-300」、新川股份有限公司製造)將所獲得之附加熱接合用片材之矽晶片壓合於鍍銀銅板(20 mm見方)而暫時固定。該銅板係實施鍍銀而於表面帶有銀平面者，於本步驟中，經由加熱接合用片材將矽晶片暫時固定於該銀平面。於該暫時固定中，壓合溫度為70℃，壓合壓力為0.5 MPa，壓合時間為1秒。以此方式對每個實施例1～3及比較例1之加熱接合用片材製作5個樣品。然後，於烘箱(商品名「LC-114」、ESPEC股份有限公司製造)內對所製作之樣品進行加熱(加熱處理)。於該處理中，加熱溫度為200℃，加熱時間為1小時。於此種加熱處理之後，計量於矽晶片產生距暫時固定位置10 μm以上之位置偏移(晶片移動)之樣品之個數。產生此種晶片移動之樣品數於實施例1～3之各者中為5個樣品中之0個，於比較例1中為5個樣品中之2個。並且，將產生晶片移動之樣品數為0之情形時評價為良(○)，將1以上之情形時評價為不良(×)。將該等結果記載於表1。 ＜晶片移動性(300℃)＞ 對實施例1～3及比較例1之各加熱接合用片材，研究燒結接合時之晶片移動之有無。具體而言，首先，使用具備壓合輥之貼合機對在一面形成有作為蒸鍍膜之銀平面電極(5 mm見方)之矽晶片(5 mm見方)之該銀平面電極貼附加熱接合用片材。貼附溫度為70℃，壓合輥之速度為10 mm/秒，貼附用之負荷(壓合輥之壓力)為0.5 MPa。以此方式獲得於單面帶有5 mm見方之加熱接合用片材或黏著層之矽晶片。其次，使用黏晶裝置(商品名「黏晶機SPA-300」、新川股份有限公司製造)將所獲得之附加熱接合用片材之矽晶片壓合於鍍銀銅板(20 mm見方)而暫時固定。該銅板係實施鍍銀而於表面帶有銀平面者，於本步驟中，經由加熱接合用片材將矽晶片暫時固定於該銀平面。於該暫時固定中，壓合溫度為70℃，壓合壓力為0.5 MPa，壓合時間為1秒。以此方式對每個實施例1～3及比較例1之加熱接合用片材製作5個樣品。然後，使用燒結裝置(商品名「HTM-3000」、伯東股份有限公司製造)對所製作之樣品進行燒結步驟。燒結用之加熱溫度為300℃，加壓力為40 MPa，加熱時間為5分鐘。於此種燒結步驟之後，計量於矽晶片產生距暫時固定位置10 μm以上之位置偏移(晶片移動)之樣品之個數。產生此種晶片移動之樣品數於實施例1～3之各者中為5個樣品中之0個，於比較例1中為5個樣品中之1個。並且，將產生晶片移動之樣品數為0之情形時評價為良(○)，將1以上之情形時評價為不良(×)。將該等結果記載於表1。 [評價] 根據實施例1～3之加熱接合用片材，可一面抑制接合對象物之位置偏移一面實現該接合對象物間之燒結接合。根據比較例1之加熱接合用片材，當進行接合對象物間之燒結接合時，產生接合對象物之位置偏移。 [表1]
Figure 107109598-A0304-0001
10‧‧‧加熱接合用片材11‧‧‧黏著層12‧‧‧燒結層20‧‧‧切割帶21‧‧‧基材22‧‧‧黏著劑層30‧‧‧半導體晶圓C‧‧‧半導體晶片D‧‧‧照射區域L‧‧‧剝離襯墊R‧‧‧密封樹脂S‧‧‧支持基板T1‧‧‧晶片固定用膠帶T1a‧‧‧黏著面W‧‧‧接合線X‧‧‧附加熱接合用片材之切割帶
圖1係本發明之一實施形態之加熱接合用片材之局部剖面模式圖。 圖2(a)～(c)表示使用圖1所示之加熱接合用片材而進行之半導體裝置製造方法中之一部分步驟。 圖3(a)、(b)表示使用圖1所示之加熱接合用片材而進行之半導體裝置製造方法中之一部分步驟。 圖4(a)、(b)表示使用圖1所示之加熱接合用片材而進行之半導體裝置製造方法中之一部分步驟。 圖5係本發明之一實施形態之附加熱接合用片材之切割帶的局部剖面模式圖。 圖6(a)、(b)表示使用圖5所示之附加熱接合用片材之切割帶而進行之半導體裝置製造方法中之一部分步驟。
10‧‧‧加熱接合用片材
11‧‧‧黏著層

Claims (10)

  1. 一種加熱接合用片材，其具備包含含有導電性金屬之燒結性粒子及低沸點黏合劑之黏著層，且該低沸點黏合劑選自由萜烯醇類、除萜烯醇類以外之醇類、伸烷基二醇烷基醚類、及除伸烷基二醇烷基醚類以外之醚類所組成之群中之一種以上之低沸點黏合劑，上述黏著層對在70℃、0.5MPa、及1秒之壓合條件下以5mm見方之尺寸壓合有該黏著層之銀平面於70℃時的剪切接著力為0.1MPa以上，該剪切接著力為對接著力測定對象物向剪切方向之位移速度為0.5mm/秒之條件下之測定值。
  2. 如請求項1之加熱接合用片材，其中上述黏著層對在70℃、0.5MPa、及1秒之壓合條件下以5mm見方之尺寸壓合有該黏著層之銀平面於23℃時的剪切接著力相對於上述黏著層對在70℃、0.5MPa、及1秒之壓合條件下以5mm見方之尺寸壓合有該黏著層之銀平面於70℃時的剪切接著力之比之值為5~40。
  3. 如請求項1之加熱接合用片材，其中上述黏著層對在50℃、0.5MPa、及1秒之壓合條件下以5mm見方之尺寸壓合有該黏著層之銀平面於50℃時的剪切接著力為0.11MPa以上。
  4. 如請求項1之加熱接合用片材，其中上述黏著層對在50℃、0.5MPa、及1秒之壓合條件下以5mm見方之尺寸壓合有該黏著層之銀平面於50℃時的剪切接著力相對於上述黏著層對在70℃、0.5MPa、及1秒之壓合條件下以5mm見方之尺寸壓合有該黏著層之銀平面於70℃時的剪切接著力之比之值為1~40。
  5. 如請求項1之加熱接合用片材，其中上述黏著層之70℃時之黏度為5×103~1×107Pa‧s。
  6. 如請求項1至5中任一項之加熱接合用片材，其中上述黏著層包含熱分解性高分子黏合劑。
  7. 如請求項6之加熱接合用片材，其中上述熱分解性高分子黏合劑之重量平均分子量為10000以上。
  8. 如請求項6之加熱接合用片材，其中上述熱分解性高分子黏合劑為聚碳酸酯樹脂及/或丙烯酸系樹脂。
  9. 如請求項1之加熱接合用片材，其中上述燒結性粒子包含選自由銀、銅、氧化銀、及氧化銅所組成之群中之至少一種。
  10. 一種附加熱接合用片材之切割帶，其具備：切割帶，其具有包含基材及黏著劑層之積層構造；及 上述切割帶中之上述黏著劑層上之如請求項1至9中任一項之加熱接合用片材。
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