TWI814750B - 燒結接合用組合物、燒結接合用片材、及附有燒結接合用片材之切割帶 - Google Patents

燒結接合用組合物、燒結接合用片材、及附有燒結接合用片材之切割帶 Download PDF

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TWI814750B
TWI814750B TW107138757A TW107138757A TWI814750B TW I814750 B TWI814750 B TW I814750B TW 107138757 A TW107138757 A TW 107138757A TW 107138757 A TW107138757 A TW 107138757A TW I814750 B TWI814750 B TW I814750B
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sintering
bonding
sintered
mass
sintering bonding
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TW107138757A
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TW201922381A (zh
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市川智昭
菅生悠樹
下田麻由
三田亮太
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日商日東電工股份有限公司
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    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
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    • B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
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Abstract

本發明之燒結接合用組合物包含含有導電性金屬之燒結性粒子。該燒結性粒子之平均粒徑為2 μm以下，且該燒結性粒子中之粒徑100 nm以下之粒子之比率為40質量%以上且未達80質量%。本發明之燒結接合用片材10具備此種燒結接合用組合物所形成之黏著層。本發明之附有燒結接合用片材之切割帶X具備此種燒結接合用片材10及切割帶20。切割帶20具有包含基材21及黏著劑層22之積層結構，且燒結接合用片材10位於切割帶20之黏著劑層22上。本發明之燒結接合用組合物、燒結接合用片材、及附有燒結接合用片材之切割帶適於實現利用高密度之燒結層之燒結接合。

Description

燒結接合用組合物、燒結接合用片材、及附有燒結接合用片材之切割帶
本發明係關於一種可用於半導體裝置之製造等之燒結接合用組合物、燒結接合用片材、及附有燒結接合用片材之切割帶。
於半導體裝置之製造中，作為用以使半導體晶片取得與支持基板側之電性連接且黏晶於引線框架或絕緣電路基板等支持基板之方法，已知有於支持基板與晶片之間形成Au-Si共晶合金層而實現接合狀態之方法、或者利用焊料或含有導電性粒子之樹脂作為接合材料之方法。
另一方面，近年來負責電力之供給控制之功率半導體裝置之普及顯著，於此多數情況下功率半導體裝置起因於動作時之通電量較大而發熱量較大。因此，於功率半導體裝置之製造中，對於使半導體晶片取得與支持基板側之電性連接且黏晶於支持基板之方法，要求於高溫動作時亦可實現可靠性較高之接合狀態。於採用SiC或GaN作為半導體材料而謀求高溫動作化之功率半導體裝置中，此種要求尤其強烈。並且，為了應對此種要求，作為伴有電性連接之黏晶方法，提出有使用含有燒結性粒子及溶劑等之燒結接合用組合物之技術。
於使用含有燒結性粒子之燒結接合用組合物進行之黏晶中，首先，將半導體晶片經由燒結接合用組合物於特定之溫度、荷重條件下載置於支持基板之晶片接合預定部位。其後，以於支持基板與其上之半導體晶片之間產生燒結接合用組合物中之溶劑之揮發等且於燒結性粒子間進行燒結之方式，進行特定之溫度、加壓條件下之加熱步驟。藉此，於支持基板與半導體晶片之間形成燒結層，從而使半導體晶片電性連接且機械接合於支持基板。此種技術例如記載於下述之專利文獻1、2中。 [先前技術文獻] [專利文獻]
[專利文獻1]國際公開第2008/065728號 [專利文獻2]日本專利特開2013-039580號公報
[發明所欲解決之問題]
於使用含有燒結性粒子之燒結接合用組合物進行之黏晶中，先前於支持基板與半導體晶片之間所形成之燒結層中，有起因於其空隙率較大而無法確保充分之接合可靠性之情形。
本發明係基於如以上之情況而想出者，其目的在於提供一種適於實現利用高密度之燒結層之燒結接合之燒結接合用組合物、燒結接合用片材、及附有燒結接合用片材之切割帶。 [解決問題之技術手段]
根據本發明之第1態樣，提供一種燒結接合用組合物。該燒結接合用組合物包含含有導電性金屬之燒結性粒子。本組合物中之燒結性粒子之平均粒徑為2 μm以下。並且，該燒結性粒子中之粒徑100 nm以下之粒子之比率為40質量%以上且未達80質量%。即，該燒結性粒子中粒徑超過100 nm之粒子所占之比率為超過20質量%且60質量%以下。此種構成之本組合物可用於將接合對象物間進行燒結接合。例如，本組合物可用於在半導體裝置之製造中使半導體晶片取得與支持基板側之電性連接且燒結接合於支持基板。
於使用燒結接合用組合物而實現燒結接合之過程中，例如於在接合對象物間介置有該組合物之狀態下將接合對象物彼此於特定條件下壓接而暫時固定，然後進行特定之溫度、加壓條件下之高溫加熱步驟，從而由該組合物形成將接合對象物間進行接合之燒結層。本發明者等人獲得以下之見解：關於此種燒結接合製程中所使用之燒結接合用組合物中調配之含有導電性金屬之燒結性粒子的上述之粒度分佈構成、即平均粒徑為2 μm以下且粒徑100 nm以下之粒子之比率為40質量%以上且未達80質量%之構成適於使該組合物經過燒結接合製程所形成之燒結層謀求高密度化。例如，如以後述之實施例及比較例所示。根據平均粒徑2 μm以下之燒結性粒子之上述粒度分佈構成，可認為於本燒結接合用組合物中之燒結性粒子之含有比率例如為較大之85質量%以上之情形時，粒徑100 nm以下之粒子群及粒徑超過100 nm之粒子群於組合物中容易呈現藉由燒結容易形成高密度燒結層之堆積(packing)狀態。
又，本發明者等人亦獲得以下之見解：存在由包含含有導電性金屬之燒結性粒子之組合物形成之燒結層之密度越高，該燒結層中可獲得越高之接合可靠性之傾向。例如，如以後述之實施例及比較例所示。於用以使半導體晶片取得與支持基板側之電性連接且機械接合於支持基板之燒結接合中，尤其是對於利用燒結層之接合對象物間之接合要求確保高度之可靠性。適於實現利用高密度之燒結層之燒結接合之本組合物適於該燒結層中實現較高之接合可靠性。
如上所述，本發明之第1態樣之燒結接合用組合物適於實現利用高密度之燒結層之燒結接合，因此適於該燒結層中實現較高之接合可靠性。
本燒結接合用組合物中之燒結性粒子之含有比率較佳為90~98質量%，更佳為92~98質量%，更佳為94~98質量%。此種構成於謀求所形成之燒結層之高密度化之方面較佳。
本燒結接合用組合物經過300℃、40 MPa、及2.5分鐘之條件下之燒結後之空隙率(即，藉由該燒結由本組合物形成之燒結層之空隙率)較佳為10%以下，更佳為8%以下，更佳為6%以下，更佳為4%以下。此種構成於謀求所形成之燒結層之高密度化之方面較佳。
本燒結接合用組合物經過300℃、40 MPa、及2.5分鐘之條件下之燒結後的藉由奈米壓痕法所測定之25℃下之彈性模數(即，對藉由該燒結由本組合物形成之燒結層藉由奈米壓痕法所測定之25℃下之彈性模數)較佳為60 GPa以上，更佳為65 GPa以上，更佳為70 GPa以上，更佳為75 GPa以上。伴有此種硬度之燒結層於實現較高之接合可靠性之方面較佳。
本燒結接合用組合物較佳為包含含有導電性金屬之上述燒結性粒子，並且包含熱分解性高分子黏合劑。本發明中，所謂熱分解性高分子黏合劑，係指於燒結接合用之高溫加熱過程中可熱分解之黏合劑成分。根據此種構成，於上述之暫時固定中之溫度、例如70℃及其附近之溫度範圍內，利用熱分解性高分子黏合劑之黏彈性性而容易確保本燒結接合用組合物之凝聚力，因此容易確保該組合物之接著力。因此，本構成於抑制於在接合對象物間介置有本燒結接合用組合物之狀態下將接合對象物彼此壓接時或壓接後於該等接合對象物產生位置偏移之方面較佳。
本燒結接合用組合物中之熱分解性高分子黏合劑之重量平均分子量較佳為10000以上。此種構成於利用熱分解性高分子黏合劑之黏彈性性而確保本燒結接合用組合物之凝聚力或接著力之方面較佳。
本燒結接合用組合物中之熱分解性高分子黏合劑較佳為聚碳酸酯樹脂及/或丙烯酸系樹脂。如上所述，於使用燒結接合用組合物而實現燒結接合之過程中，利用該組合物將接合對象物間暫時固定後，進行燒結接合用之高溫加熱。燒結接合用之高溫加熱例如於包含300℃及其附近之溫度範圍內進行，於此聚碳酸酯樹脂及丙烯酸系樹脂容易以於300℃左右之溫度下進行分解、揮散之高分子黏合劑之形式準備。因此，本構成於減少使用本燒結接合用組合物而燒結接合之接合對象物間所形成之燒結層中之有機殘渣之方面較佳。存在燒結層中之有機殘渣越少，該燒結層越堅固之傾向，因此該燒結層中容易獲得較高之接合可靠性。
本燒結接合用組合物中之燒結性粒子較佳為包含選自由銀、銅、氧化銀、及氧化銅所組成之群中之至少一種。此種構成於在使用本燒結接合用組合物而燒結接合之接合對象物間形成堅固之燒結層之方面較佳。
根據本發明之第2態樣，提供一種燒結接合用片材。該燒結接合用片材具備本發明之第1態樣之上述之燒結接合用組合物所形成之黏著層。此種構成適於在接合對象物間以均勻之厚度供給燒結接合用組合物而藉由均勻之厚度之燒結層將接合對象物間進行燒結接合。利用均勻之厚度之燒結層之燒結接合例如於實現半導體晶片對支持基板之較高之接合可靠性之方面較佳。此外，本燒結接合用片材適於一面抑制燒結金屬自接合對象物間之滲出或燒結金屬於接合對象物側面之攀爬一面將接合對象物間進行燒結接合。本燒結接合用片材係以使燒結接合用材料不易流動化之片材之形態供給者，因此適於抑制此種滲出或攀爬。抑制此種滲出或攀爬於提高伴有燒結接合之半導體裝置等製造目標物中之良率之方面較佳。
根據本發明之第3態樣，提供一種附有燒結接合用片材之切割帶。該附有燒結接合用片材之切割帶具備切割帶、及本發明之第2態樣之上述之燒結接合用片材。切割帶具有包含基材及黏著劑層之積層結構，且燒結接合用片材配置於切割帶之黏著劑層上。此種構成之切割帶可用於在半導體裝置之製造過程中獲得伴有晶片尺寸之燒結接合用片材之半導體晶片。並且，根據本切割帶，於半導體裝置製造過程中之燒結接合中，可獲得與上文關於本發明之第1態樣之燒結接合用組合物所述者相同之效果，且可獲得與上文關於本發明之第2態樣之燒結接合用片材所述者相同之效果。
圖1係本發明之一實施形態之燒結接合用片材10之部分剖面模式圖。燒結接合用片材10係用於將接合對象物間進行燒結接合者，且具備本發明之燒結接合用組合物所形成之黏著層11。本實施形態中，黏著層11或形成其之燒結接合用組合物至少包含含有導電性金屬之燒結性粒子、熱分解性高分子黏合劑、及低沸點黏合劑。此種燒結接合用片材10例如可用於在半導體裝置之製造過程中使半導體晶片取得與支持基板側之電性連接且燒結接合於支持基板。
燒結接合用片材10或其黏著層11中所含之燒結性粒子係含有導電性金屬元素且可燒結之粒子。作為導電性金屬元素，例如可列舉：金、銀、銅、鈀、錫、及鎳。作為此種燒結性粒子之構成材料，例如可列舉：金、銀、銅、鈀、錫、鎳、及選自該等之群中之兩種以上之金屬之合金。作為燒結性粒子之構成材料，亦可列舉：氧化銀、或氧化銅、氧化鈀、氧化錫等金屬氧化物。又，燒結性粒子亦可為具有核殼結構之粒子。例如，燒結性粒子亦可為具有以銅作為主成分之核、及以金或銀等作為主成分且被覆核之殼的核殼結構之粒子。本實施形態中，燒結性粒子較佳為包含選自由銀粒子、銅粒子、氧化銀粒子、及氧化銅粒子所組成之群中之至少一種。就所形成之燒結層中實現較高之導電性及較高之導熱性之觀點而言，作為燒結性粒子，較佳為銀粒子及銅粒子。此外，就耐氧化性之觀點而言，銀粒子容易操作而較佳。例如，於半導體晶片對附有銀鍍覆之銅基板之燒結接合中，使用包含銅粒子作為燒結性粒子之燒結材料之情形時，必須於氮氣氛圍下等惰性環境下進行燒結製程，但於使用銀粒子形成燒結性粒子之燒結材料之情形時，即便於空氣氛圍下，亦可適當地實行燒結製程。
燒結接合用片材10或其黏著層11中所含之燒結性粒子之平均粒徑為2 μm以下。就使燒結性粒子實現較低之燒結溫度等而確保良好之燒結性之觀點而言，該燒結性粒子之平均粒徑較佳為1.5 μm以下，更佳為1.2 μm以下，更佳為1 μm以下，更佳為700 nm以下，更佳為500 nm以下。就使黏著層11或用以形成其之組合物中之燒結性粒子確保良好之分散性之觀點而言，該燒結性粒子之平均粒徑較佳為70 nm以上，更佳為100 nm以上，更佳為200 nm以上。
燒結性粒子之平均粒徑可基於使用掃描式電子顯微鏡(SEM)進行之觀察而求出。關於黏著層含有燒結性粒子之情形時之該燒結性粒子之平均粒徑，具體而言，可藉由如下之方法而求出。首先，對包含燒結性粒子之黏著層於冷卻環境下實施離子拋光而使黏著層之剖面露出。繼而，使用場發射型掃描電子顯微鏡SU8020(日立高新技術股份有限公司製造)，對該露出剖面進行拍攝，獲得反射電子像作為圖像資料。拍攝條件係將加速電壓設為5 kV，將倍率設為50000倍。繼而，使用圖像解析軟體ImageJ，對所獲得之圖像資料實施自動二值化處理後，根據該圖像資料算出粒子之平均粒徑。
黏著層11中之燒結性粒子之含有比率例如為85質量%以上，較佳為90~98質量%，更佳為92~98質量%，更佳為94~98質量%。
黏著層11中之燒結性粒子中之粒徑100 nm以下之粒子之比率為40質量%以上且未達80質量%。該比率較佳為45質量%以上，更佳為48質量%以上，且較佳為70質量%以下，更佳為65質量%以下。即，黏著層11中之燒結性粒子中之粒徑超過100 nm之粒子之比率超過20質量%，較佳為30質量%以上，更佳為35質量%以上，且為60質量%以下，較佳為55質量%以下，更佳為52質量%以下。
燒結接合用片材10或其黏著層11中所含之熱分解性高分子黏合劑係於燒結接合用之高溫加熱過程中可熱分解之黏合劑成分，係有助於在該加熱過程前保持燒結接合用片材10或其黏著層11之片材形狀之要素。本實施形態中，就擔保片材形狀保持功能之觀點而言，熱分解性高分子黏合劑係於常溫(23℃)下為固形之材料。作為此種熱分解性高分子黏合劑，例如可列舉聚碳酸酯樹脂及丙烯酸系樹脂。
關於作為熱分解性高分子黏合劑之聚碳酸酯樹脂，例如可列舉：於主鏈之碳酸酯基(-O-CO-O-)間不含苯環等芳香族化合物而由脂肪族鏈構成之脂肪族聚碳酸酯、及於主鏈之碳酸酯基(-O-CO-O-)間包含芳香族化合物之芳香族聚碳酸酯。作為脂肪族聚碳酸酯，例如可列舉聚碳酸乙二酯及聚碳酸丙二酯。作為芳香族聚碳酸酯，可列舉於主鏈包含雙酚A結構之聚碳酸酯。
關於作為熱分解性高分子黏合劑之丙烯酸系樹脂，例如可列舉具有碳數4~18之直鏈狀或支鏈狀之烷基之丙烯酸酯及/或甲基丙烯酸酯之聚合物。以下，以「(甲基)丙烯酸」表示「丙烯酸」及/或「甲基丙烯酸」。作為用以形成作為熱分解性高分子黏合劑之丙烯酸系樹脂之(甲基)丙烯酸酯之烷基，例如可列舉：甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、及十八烷基。
作為熱分解性高分子黏合劑之丙烯酸系樹脂亦可為包含源自上述(甲基)丙烯酸酯以外之其他單體之單體單元之聚合物。作為此種其他單體，例如可列舉：含羧基之單體、酸酐單體、含羥基之單體、含磺酸基之單體、及含磷酸基之單體。具體而言，作為含羧基之單體，例如可列舉：丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、伊康酸、順丁烯二酸、反丁烯二酸、及丁烯酸。作為酸酐單體，例如可列舉：順丁烯二酸酐或伊康酸酐。作為含羥基之單體，例如可列舉：(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、及(甲基)丙烯酸4-(羥基甲基)環己基甲酯。作為含磺酸基之單體，例如可列舉：苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺基丙酯、及(甲基)丙烯醯氧基萘磺酸。作為含磷酸基之單體，例如可列舉：丙烯醯基磷酸2-羥基乙酯。
熱分解性高分子黏合劑之重量平均分子量較佳為10000以上。熱分解性高分子黏合劑之重量平均分子量係設為藉由凝膠滲透層析法(GPC)進行測定並藉由聚苯乙烯換算所算出之值。
就適當地發揮上述之片材形狀保持功能之觀點而言，黏著層11中之熱分解性高分子黏合劑之含有比率較佳為0.5~10質量%，更佳為0.8~8質量%，更佳為1~6質量%。
燒結接合用片材10或其黏著層11中所含之低沸點黏合劑係設為使用動態黏彈性測定裝置(商品名「HAAKE MARS III」，Thermo Fisher Scientfic公司製造)所測定之23℃下之黏度顯示1×105 Pa・s以下之液狀或半液狀者。本黏度測定中，使用20 mmf之平行板作為治具，將板間間隙設為100 μm，將旋轉剪切中之剪切速度設為1 s-1 。
作為黏著層11中所含之低沸點黏合劑，例如可列舉：萜烯醇類、除萜烯醇類以外之醇類、伸烷基二醇烷基醚類、及除伸烷基二醇烷基醚類以外之醚類。作為萜烯醇類，例如可列舉：異𦯉基環己醇、香茅醇、香葉草醇、橙花醇、香芹醇、及α-松脂醇。作為除萜烯醇類以外之醇類，例如可列舉：戊醇、己醇、庚醇、辛醇、1-癸醇、乙二醇、二乙二醇、丙二醇、丁二醇、及2,4-二乙基-1,5戊二醇。作為伸烷基二醇烷基醚類，例如可列舉：乙二醇丁醚、二乙二醇甲醚、二乙二醇乙醚、二乙二醇丁醚、二乙二醇異丁醚、二乙二醇己醚、三乙二醇甲醚、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇二丁醚、二乙二醇丁基甲醚、二乙二醇異丙基甲醚、三乙二醇二甲醚、三乙二醇丁基甲醚、丙二醇丙醚、二丙二醇甲醚、二丙二醇乙醚、二丙二醇丙醚、二丙二醇丁醚、二丙二醇二甲醚、三丙二醇甲醚、及三丙二醇二甲醚。作為除伸烷基二醇烷基醚類以外之醚類，例如可列舉：乙二醇乙醚乙酸酯、乙二醇丁醚乙酸酯、二乙二醇乙醚乙酸酯、二乙二醇丁醚乙酸酯、二丙二醇甲醚乙酸酯、及乙二醇苯醚。作為黏著層11中所含之低沸點黏合劑，可使用一種低沸點黏合劑，亦可使用兩種以上之低沸點黏合劑。作為黏著層11中所含之低沸點黏合劑，就常溫下之穩定性之觀點而言，較佳為萜烯醇類，更佳為異𦯉基環己醇。
燒結接合用片材10或其黏著層11除以上之成分以外，例如亦可含有塑化劑等。
黏著層11之23℃下之厚度較佳為5 μm以上，更佳為10 μm以上，且較佳為100 μm以下，更佳為80 μm以下。又，黏著層11或形成其之燒結接合用組合物之70℃下之黏度例如為5×103 ~1×107 Pa・s，較佳為1×104 ~1×106 Pa・s。
黏著層11或形成其之燒結接合用組合物經過包含40 MPa之加壓下之300℃下之2.5分鐘之加熱步驟之燒結後之空隙率(即，藉由該燒結由黏著層11形成之燒結層之空隙率)較佳為10%以下，更佳為8%以下，更佳為6%以下，更佳為4%以下。
黏著層11或形成其之燒結接合用組合物經過包含40 MPa之加壓下之300℃下之2.5分鐘之加熱步驟之燒結後的藉由奈米壓痕法所測定之25℃下之彈性模數(即，對藉由該燒結由黏著層11形成之燒結層藉由奈米壓痕法所測定之25℃下之彈性模數)較佳為60 GPa以上，更佳為65 GPa以上，更佳為70 GPa以上，更佳為75 GPa以上。
利用奈米壓痕法之彈性模數之測定例如可使用奈米壓痕儀(商品名「Triboindenter」，Hysitron公司製造)而進行。本測定中，測定模式係設為單一壓入測定，測定溫度係設為25℃，使用壓頭係設為Berkovich(三角錐)型之金剛石壓頭，壓頭對測定對象物之壓入深度係設為2 μm，該壓頭之壓入速度係設為200 nm/秒，壓頭自測定對象物之拉起速度係設為200 nm/秒。基於奈米壓痕法之彈性模數之導出係利用使用裝置進行。關於具體之導出方法，例如，如Handbook of Micro/nano Tribology (Second Edition) Edited by Bharat Bhushan, CRC Press (ISBN 0-8493-8402-8)中所說明。
燒結接合用片材10例如可藉由下述方式而製作，即，將上述之各成分於溶劑中混合而製備清漆，於作為基材之隔離膜上塗佈該清漆而形成塗膜，並使該塗膜乾燥。作為清漆製備用之溶劑，可使用有機溶劑或醇溶劑。作為有機溶劑，例如可列舉：二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮、丙酮、甲基乙基酮、環己酮、甲苯、及二甲苯。作為醇溶劑，例如可列舉：乙二醇、二乙二醇、1,2-丙二醇、1,3-丙二醇、1,2-丁二醇、1,3-丁二醇、1,4-丁二醇、2-丁烯-1,4-二醇、1,2,6-己三醇、甘油、辛二醇、2-甲基-2,4-戊二醇、及松脂醇。作為基材或隔離膜，可使用聚對苯二甲酸乙二酯(PET)膜、聚乙烯膜、聚丙烯膜、以及利用剝離劑(例如氟系剝離劑或丙烯酸長鏈烷基酯系剝離劑)進行了表面塗佈之各種塑膠膜或紙等。對基材上塗佈清漆時，例如可使用模嘴塗佈機、凹版塗佈機、輥式塗佈機、反向塗佈機、缺角輪塗佈機、或管刀塗佈機(pipe doctor coater)。又，塗膜之乾燥溫度例如為70~160℃，塗膜之乾燥時間例如為1~5分鐘。
圖2至圖4表示使用燒結接合用片材10進行之半導體裝置製造方法之一部分步驟。
本方法中，首先，如圖2(a)所示，準備燒結接合用片材10及複數個半導體晶片C。燒結接合用片材10係具有包含本發明之燒結接合用組合物之上述構成之黏著層11者，且於其單面伴有剝離襯墊L。複數個半導體晶片C之各者係既已組裝有特定之半導體元件者，且固定於晶片固定用帶T1之黏著面T1a上。各半導體晶片C中，於供燒結接合用片材10貼合之側之表面(圖2中為上表面)既已形成有平面電極(省略圖示)作為外部電極。平面電極之厚度例如為10~1000 nm。該平面電極例如包含銀。又，平面電極亦可積層形成於在半導體晶片表面所形成之鈦薄膜上。鈦薄膜之厚度例如為10~1000 nm。該等平面電極及鈦薄膜例如可藉由蒸鍍法而形成。又，於各半導體晶片C之另一面(圖2中為下表面)，視需要形成有其他電極墊等(省略圖示)。
繼而，如圖2(b)所示，對複數個半導體晶片C貼合燒結接合用片材10。具體而言，一面將燒結接合用片材10自其剝離襯墊L側向半導體晶片C側按壓，一面對複數個半導體晶片C貼合燒結接合用片材10或黏著層11。作為按壓方法，例如可列舉壓接輥。貼合溫度例如為50~90℃，貼合用之荷重例如為0.01~5 MPa。
繼而，如圖2(c)所示，進行剝離襯墊L之剝離。藉此，將燒結接合用片材10或其黏著層11之各處轉印至各半導體晶片C之表面，從而獲得伴有晶片尺寸之燒結接合用片材10之半導體晶片C。
繼而，如圖3(a)所示，將半導體晶片C暫時固定於支持基板S(暫時固定步驟)。具體而言，例如使用貼片機將附有燒結接合用片材之半導體晶片C經由其燒結接合用片材10對支持基板S進行按壓而暫時固定。作為支持基板S，例如可列舉於表面伴有銅配線等配線之絕緣電路基板、及引線框架。支持基板S中之晶片搭載部位可為銅配線或引線框架等生坯表面，亦可為形成於生坯表面上之鍍覆膜之表面。作為該鍍覆膜，例如可列舉：金鍍覆膜、銀鍍覆膜、鎳鍍覆膜、鈀鍍覆膜、及鉑鍍覆膜。本步驟中，暫時固定用之溫度條件例如為作為包含70℃及其附近之溫度範圍之50~90℃，按壓之荷重條件例如為0.01~5 MPa，接合時間例如為0.01~5秒。
繼而，如圖3(b)所示，藉由經過高溫加熱過程而使半導體晶片C接合於支持基板S(燒結接合步驟)。具體而言，藉由經過特定之高溫加熱過程，而於支持基板S與半導體晶片C之間，使黏著層11中之低沸點黏合劑揮發，使熱分解性高分子黏合劑熱分解而揮散，並且使燒結性粒子之導電性金屬燒結。藉此，於支持基板S與各半導體晶片C之間形成燒結層12，從而使半導體晶片C取得與支持基板S側之電性連接且接合於支持基板S。本步驟中，燒結接合之溫度條件例如為包含300℃及其附近之200~400℃，較佳為330~350℃。燒結接合之壓力條件例如為0.05~40 MPa，較佳為0.1~20 MPa。又，燒結接合之接合時間例如為0.3~300分鐘，較佳為0.5~240分鐘。例如，於該等條件之範圍內，適宜地設定用以實施燒結接合步驟之溫度分佈或壓力分佈。如以上之燒結接合步驟可使用可同時進行加熱及加壓之裝置而進行。作為此種裝置，例如可列舉覆晶接合機及平行板壓製機。又，就防止參與燒結接合之金屬之氧化之觀點而言，本步驟較佳為於氮氣氛圍下、減壓下、或還原氣體氛圍下之任一環境下進行。
於半導體裝置之製造中，繼而，如圖4(a)所示，將半導體晶片C之上述電極墊(省略圖示)與支持基板S所具有之端子部(省略圖示)視需要經由接合線W進行電性連接(線接合步驟)。半導體晶片C之電極墊或支持基板S之端子部與接合線W之接線例如藉由伴有加熱之超音波焊接而實現。作為接合線W，例如可使用金線、鋁線、或銅線。線接合中之線加熱溫度例如為80~250℃，較佳為80~220℃。又，其加熱時間為數秒~數分鐘。
繼而，如圖4(b)所示，形成用以保護支持基板S上之半導體晶片C或接合線W之密封樹脂R(密封步驟)。本步驟中，例如藉由使用模具進行之轉注成形技術而形成密封樹脂R。作為密封樹脂R之構成材料，例如可使用環氧系樹脂。本步驟中，用以形成密封樹脂R之加熱溫度例如為165~185℃，加熱時間例如為60秒~數分鐘。於本密封步驟中密封樹脂R之硬化未充分地進行之情形時，於本步驟後進行用以使密封樹脂R完全硬化之後硬化步驟。
以如上之方式，可經過使用燒結接合用片材10之過程而製造半導體裝置。
圖5係本發明之一實施形態之附有燒結接合用片材之切割帶X之剖面模式圖。附有燒結接合用片材之切割帶X具有包含本發明之一實施形態之上述之燒結接合用片材10及切割帶20之積層結構，可用於在半導體裝置之製造中獲得伴有晶片尺寸之燒結接合用片材之半導體晶片。又，附有燒結接合用片材之切割帶X具有與半導體裝置之製造過程中之加工對象之半導體晶圓對應之尺寸之例如圓盤形狀。
切割帶20具有包含基材21及黏著劑層22之積層結構。
切割帶20之基材21係作為切割帶20或附有燒結接合用片材之切割帶X中之支持體發揮功能之要素。作為基材21，例如可使用塑膠膜等塑膠基材。作為該塑膠基材之構成材料，例如可列舉：聚氯乙烯、聚偏二氯乙烯、聚烯烴、聚酯、聚胺基甲酸酯、聚碳酸酯、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯基硫醚、芳香族聚醯胺、氟樹脂、纖維素系樹脂、及聚矽氧樹脂。作為聚烯烴，例如可列舉：低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯、乙烯-乙酸乙烯酯共聚物、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、乙烯-丁烯共聚物、及乙烯-己烯共聚物。作為聚酯，例如可列舉：聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯、及聚對苯二甲酸丁二酯(PBT)。基材21可包含一種材料，亦可包含兩種以上之材料。基材21可具有單層結構，亦可具有多層結構。於基材21上之黏著劑層22為紫外線硬化型之情形時，基材21較佳為具有紫外線透過性。又，於基材21為塑膠膜之情形時，可為未延伸膜，亦可為單軸延伸膜，亦可為雙軸延伸膜。
基材21中之黏著劑層22側之表面亦可實施用以提高與黏著劑層22之密接性之處理。作為此種處理，例如可列舉：電暈放電處理、電漿處理、砂粗化(sand mat)加工處理、臭氧暴露處理、火焰暴露處理、高壓電擊暴露處理、及離子化放射線處理等物理處理、鉻酸處理等化學處理、以及底塗處理。
就確保用以使基材21作為切割帶20或附有燒結接合用片材之切割帶X中之支持體發揮功能之強度之觀點而言，基材21之厚度較佳為40 μm以上，更佳為50 μm以上，更佳為55 μm以上，更佳為60 μm以上。又，就切割帶20或附有燒結接合用片材之切割帶X中實現適度之可撓性之觀點而言，基材21之厚度較佳為200 μm以下，更佳為180 μm以下，更佳為150 μm以下。
切割帶20之黏著劑層22含有黏著劑。作為黏著劑，例如可使用以丙烯酸系聚合物作為基礎聚合物之丙烯酸系黏著劑或橡膠系黏著劑。又，該黏著劑可為藉由加熱或放射線照射等來自外部之作用而可刻意地使黏著力減少之黏著劑(黏著力減少型黏著劑)，亦可為藉由來自外部之作用而黏著力幾乎或完全不會減少之黏著劑(黏著力非減少型黏著劑)。作為黏著力減少型黏著劑，例如可列舉放射線硬化型黏著劑(具有放射線硬化性之黏著劑)或加熱發泡型黏著劑。作為黏著力非減少型黏著劑，例如可列舉感壓型黏著劑。
於黏著劑層22含有丙烯酸系黏著劑之情形時，作為該丙烯酸系黏著劑之基礎聚合物之丙烯酸系聚合物較佳為包含源自丙烯酸烷基酯及/或甲基丙烯酸烷基酯之單體單元作為以質量比率計為最多之單體單元。
作為用以形成丙烯酸系聚合物之單體單元之(甲基)丙烯酸烷基酯，例如可列舉：具有直鏈狀或支鏈狀之烷基之(甲基)丙烯酸烷基酯、及(甲基)丙烯酸環烷基酯。作為(甲基)丙烯酸烷基酯，例如可列舉：(甲基)丙烯酸之甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、或二十烷基酯。作為(甲基)丙烯酸環烷基酯，例如可列舉(甲基)丙烯酸之環戊酯或環己酯。作為用於丙烯酸系聚合物之(甲基)丙烯酸烷基酯，可使用一種(甲基)丙烯酸烷基酯，亦可使用兩種以上之(甲基)丙烯酸烷基酯。就於黏著劑層22中適當地表現出依賴於(甲基)丙烯酸烷基酯之黏著性等基本特性之方面而言，用以形成丙烯酸系聚合物之全部單體成分中之(甲基)丙烯酸烷基酯之比率例如為50質量%以上。
為了改質其凝聚力或耐熱性等，丙烯酸系聚合物亦可包含源自可與(甲基)丙烯酸烷基酯共聚之其他單體之單體單元。作為此種單體，例如可列舉：含羧基之單體、酸酐單體、含羥基之單體、含磺酸基之單體、含磷酸基之單體、丙烯醯胺、及丙烯腈。作為含羧基之單體，例如可列舉：丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、伊康酸、順丁烯二酸、反丁烯二酸、及丁烯酸。作為酸酐單體，例如可列舉：順丁烯二酸酐及伊康酸酐。作為含羥基之單體，例如可列舉：(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、及(甲基)丙烯酸4-(羥基甲基)環己基甲酯。作為含磺酸基之單體，例如可列舉：苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺基丙酯、及(甲基)丙烯醯氧基萘磺酸。作為含磷酸基之單體，例如可列舉：丙烯醯基磷酸2-羥基乙酯。作為用於丙烯酸系聚合物之該其他單體，可使用一種單體，亦可使用兩種以上之單體。就於黏著劑層22中適當地表現出依賴於(甲基)丙烯酸烷基酯之黏著性等基本特性之方面而言，用以形成丙烯酸系聚合物之全部單體成分中之(甲基)丙烯酸烷基酯以外之單體之比率例如為50質量%以下。
為了於其聚合物骨架中形成交聯結構，丙烯酸系聚合物亦可包含源自可與(甲基)丙烯酸烷基酯共聚之多官能性單體之單體單元。作為此種多官能性單體，例如可列舉：己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯、(甲基)丙烯酸縮水甘油酯、聚酯(甲基)丙烯酸酯、及(甲基)丙烯酸胺基甲酸酯。作為用於丙烯酸系聚合物之多官能性單體，可使用一種多官能性單體，亦可使用兩種以上之多官能性單體。就於黏著劑層22中適當地表現出依賴於(甲基)丙烯酸烷基酯之黏著性等基本特性之方面而言，用以形成丙烯酸系聚合物之全部單體成分中之多官能性單體之比率例如為40質量%以下。
丙烯酸系聚合物可使用以形成其之原料單體聚合而獲得。作為聚合方法，例如可列舉：溶液聚合、乳化聚合、塊狀聚合、及懸浮聚合。就使用切割帶20或附有燒結接合用片材之切割帶X之半導體裝置製造方法中之高度之清潔性之觀點而言，切割帶20或附有燒結接合用片材之切割帶X中之黏著劑層22中之低分子量成分以少為佳，丙烯酸系聚合物之數量平均分子量例如為10萬以上。
為了提高丙烯酸系聚合物等基礎聚合物之數量平均分子量，黏著劑層22或用以形成其之黏著劑例如亦可含有外部交聯劑。作為用以與丙烯酸系聚合物等基礎聚合物反應而形成交聯結構之外部交聯劑，可列舉：聚異氰酸酯化合物、環氧化合物、氮丙啶化合物、及三聚氰胺系交聯劑。黏著劑層22或用以形成其之黏著劑中之外部交聯劑之含量相對於基礎聚合物100質量份例如為5質量份以下。
黏著劑層22亦可為藉由接受紫外線等放射線之照射而照射部位之交聯度提高且黏著力降低之放射線硬化型黏著劑層。作為用以形成此種黏著劑層之放射線硬化型黏著劑，例如可列舉：含有上述之丙烯酸系聚合物等基礎聚合物、及具有放射線聚合性之碳-碳雙鍵等官能基之放射線聚合性之單體成分或低聚物成分的添加型之放射線硬化型黏著劑。
作為放射線聚合性之單體成分，例如可列舉：(甲基)丙烯酸胺基甲酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、及1,4-丁二醇二(甲基)丙烯酸酯。作為放射線聚合性之低聚物成分，例如可列舉：胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種低聚物，以分子量100~30000左右者為適當。黏著劑層22或用以形成其之放射線硬化型黏著劑中之放射線聚合性之單體成分或低聚物成分之含量於可使所形成之黏著劑層22之黏著力適當降低之範圍內決定，相對於丙烯酸系聚合物等基礎聚合物100質量份例如為40~150質量份。又，作為添加型之放射線硬化型黏著劑，例如亦可使用日本專利特開昭60-196956號公報中所揭示者。
作為用以形成黏著劑層22之放射線硬化型黏著劑，例如亦可列舉：含有於聚合物側鏈、或聚合物主鏈中、聚合物主鏈末端具有放射線聚合性之碳-碳雙鍵等官能基之基礎聚合物的內在型之放射線硬化型黏著劑。此種內在型之放射線硬化型黏著劑於抑制起因於所形成之黏著劑層22內之低分子量成分之移動的黏著特性之未意圖之經時變化之方面較佳。
作為內在型之放射線硬化型黏著劑中所含有之基礎聚合物，較佳為以丙烯酸系聚合物作為基本骨架者。作為形成此種基本骨架之丙烯酸系聚合物，可採用上述之丙烯酸系聚合物。作為向丙烯酸系聚合物中之放射線聚合性之碳-碳雙鍵之導入方法，例如可列舉以下之方法：使包含具有特定之官能基(第1官能基)之單體之原料單體共聚而獲得丙烯酸系聚合物後，使具有可於與第1官能基之間產生反應而鍵結之特定之官能基(第2官能基)及放射線聚合性碳-碳雙鍵之化合物，在維持碳-碳雙鍵之放射線聚合性之狀態下，對丙烯酸系聚合物進行縮合反應或加成反應。
作為第1官能基與第2官能基之組合，例如可列舉：羧基與環氧基、環氧基與羧基、羧基與氮丙啶基、氮丙啶基與羧基、羥基與異氰酸酯基、異氰酸酯基與羥基。該等組合之中，就反應追蹤之容易度之觀點而言，較佳為羥基與異氰酸酯基之組合、及異氰酸酯基與羥基之組合。又，製作具有反應性較高之異氰酸酯基之聚合物時技術上之難易度較高，於此就丙烯酸系聚合物之製作或獲取之容易性之觀點而言，更佳為丙烯酸系聚合物側之上述第1官能基為羥基且上述第2官能基為異氰酸酯基之情形。該情形時，作為併有放射線聚合性碳-碳雙鍵及作為第2官能基之異氰酸酯基之異氰酸酯化合物，例如可列舉：甲基丙烯醯基異氰酸酯、異氰酸2-甲基丙烯醯氧基乙酯、及間異丙烯基-α,α-二甲基苄基異氰酸酯。又，作為伴有第1官能基之丙烯酸系聚合物，較佳為包含源自上述之含羥基之單體之單體單元者，亦較佳為包含源自2-羥基乙基乙烯醚、或4-羥基丁基乙烯醚、二乙二醇單乙烯醚等醚系化合物之單體單元者。
用以形成黏著劑層22之放射線硬化型黏著劑較佳為含有光聚合起始劑。作為光聚合起始劑，例如可列舉：α-酮醇系化合物、苯乙酮系化合物、安息香醚系化合物、縮酮系化合物、芳香族磺醯氯系化合物、光活性肟系化合物、二苯甲酮系化合物、9-氧硫𠮿系化合物、樟腦醌、鹵化酮、醯基氧化膦、及醯基膦酸酯。作為α-酮醇系化合物，例如可列舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、及1-羥基環己基苯基酮。作為苯乙酮系化合物，例如可列舉：甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、及2-甲基-1-[4-(甲硫基)-苯基]-2-𠰌啉基丙烷-1。作為安息香醚系化合物，例如可列舉：安息香乙醚、安息香異丙醚、及大茴香偶姻甲醚。作為縮酮系化合物，例如可列舉苯偶醯二甲基縮酮。作為芳香族磺醯氯系化合物，例如可列舉2-萘磺醯氯。作為光活性肟系化合物，例如可列舉1-苯酮-1,2-丙烷二酮-2-(O-乙氧基羰基)肟。作為二苯甲酮系化合物，例如可列舉：二苯甲酮、苯甲醯苯甲酸、及3,3'-二甲基-4-甲氧基二苯甲酮。作為9-氧硫系化合物，例如可列舉：9-氧硫、2-氯-9-氧硫𠮿、2-甲基-9-氧硫𠮿、2,4-二甲基-9-氧硫𠮿、異丙基-9-氧硫𠮿、2,4-二氯-9-氧硫𠮿、2,4-二乙基-9-氧硫𠮿、及2,4-二異丙基-9-氧硫𠮿。用以形成黏著劑層22之放射線硬化型黏著劑中之光聚合起始劑之含量相對於丙烯酸系聚合物等基礎聚合物100質量份例如為0.05~20質量份。
黏著劑層22或用以形成其之黏著劑中，除以上之成分以外，亦可含有交聯促進劑、或黏著賦予劑、抗老化劑、著色劑等添加劑。著色劑亦可為接受放射線照射而進行著色之化合物。作為此種化合物，例如可列舉隱色染料。
就黏著劑層22之放射線硬化之前後對燒結接合用片材10之接著力之平衡之觀點而言，黏著劑層22之厚度例如為1~50 μm。
具有如以上之構成之附有燒結接合用片材之切割帶X例如可以如下之方式製作。
關於附有燒結接合用片材之切割帶X之切割帶20，可藉由於所準備之基材21上設置黏著劑層22而製作。例如，樹脂制之基材21可藉由軋光機制膜法、於有機溶劑中之澆鑄法、於密閉系統中之吹脹擠出法、T模擠出法、共擠出法、乾式層壓法等制膜方法而製作。黏著劑層22可藉由下述方式而形成，即，製備黏著劑層22形成用之黏著劑組合物後，於基材21上或特定之隔離膜(即剝離襯墊)上塗佈該黏著劑組合物而形成黏著劑組合物層，視需要使該黏著劑組合物層乾燥(此時視需要使之加熱交聯)。作為黏著劑組合物之塗佈方法，例如可列舉：輥塗敷、網版塗敷、及凹版塗敷。用以使黏著劑組合物層乾燥之溫度例如為80~150℃，時間例如為0.5~5分鐘。於黏著劑層22形成於隔離膜上之情形時，將該伴有隔離膜之黏著劑層22貼合於基材21。以如上之方式，可製作切割帶20。
關於附有燒結接合用片材之切割帶X之燒結接合用片材10，如上所述，例如可藉由下述方式而製作，即，製備燒結接合用片材10形成用之清漆，於作為基材之隔離膜上塗佈該清漆而形成塗膜，並使該塗膜乾燥。
於附有燒結接合用片材之切割帶X之製作中，繼而，於切割帶20之黏著劑層22側例如壓接而貼合燒結接合用片材10。貼合溫度例如為30~50℃。貼合壓力(線壓)例如為0.1~20 kgf/cm。於黏著劑層22為如上述之放射線硬化型黏著劑層之情形時，繼而，例如亦可自基材21之側，對黏著劑層22照射紫外線等放射線。照射量例如為50~500 mJ/cm2 ，較佳為100~300 mJ/cm2 。附有燒結接合用片材之切割帶X中進行作為黏著劑層22之黏著力減少措施之照射之區域(照射區域D)例如為黏著劑層22中之燒結接合用片材貼合區域內之除其周緣部以外之區域。
以如上之方式，例如可製作圖5所示之附有燒結接合用片材之切割帶X。於附有燒結接合用片材之切割帶X，亦可以被覆伴有燒結接合用片材10之黏著劑層22之方式設置隔離膜(省略圖示)。該隔離膜係用於以使黏著劑層22及燒結接合用片材10不露出之方式進行保護之要件，於附有燒結接合用片材之切割帶X之使用前自該膜剝離。作為隔離膜，可使用聚對苯二甲酸乙二酯(PET)膜、聚乙烯膜、聚丙烯膜、以及利用剝離劑(例如氟系剝離劑或丙烯酸長鏈烷基酯系剝離劑)進行了表面塗佈之各種塑膠膜或紙等。
圖6表示使用附有燒結接合用片材之切割帶X進行之半導體裝置製造方法之一部分步驟。
本方法中，首先，如圖6(a)所示，於附有燒結接合用片材之切割帶X之燒結接合用片材10上貼合半導體晶圓30。具體而言，藉由壓接輥等將半導體晶圓30按壓於附有燒結接合用片材之切割帶X之燒結接合用片材10側，從而貼附於附有燒結接合用片材之切割帶X或燒結接合用片材10。半導體晶圓30係既已組裝有複數個半導體元件者，且於貼附於燒結接合用片材10之側之表面(圖6中為下表面)既已形成有平面電極(省略圖示)作為外部電極。平面電極之厚度例如為10~1000 nm。該平面電極例如包含銀。又，平面電極亦可積層形成於在半導體晶圓表面所形成之鈦薄膜上。鈦薄膜之厚度例如為10~1000 nm。該等平面電極及鈦薄膜例如可藉由蒸鍍法而形成。又，於半導體晶圓30之另一面(圖6中為上表面)，針對每個半導體元件，視需要形成有其他電極墊等(省略圖示)。本步驟中，貼附溫度例如為50~90℃，貼附用之荷重例如為0.01~10 MPa。於附有燒結接合用片材之切割帶X中之黏著劑層22為放射線硬化型黏著劑層之情形時，亦可代替附有燒結接合用片材之切割帶X之製造過程中之上述之放射線照射，而於將半導體晶圓30貼合於附有燒結接合用片材之切割帶X後，自基材21之側對黏著劑層22照射紫外線等放射線。照射量例如為50~500 mJ/cm2 ，較佳為100~300 mJ/cm2 。附有燒結接合用片材之切割帶X中進行作為黏著劑層22之黏著力減少措施之放射線照射之區域(圖5中表示為照射區域D)例如為黏著劑層22中之燒結接合用片材貼合區域內之除其周緣部以外之區域。
繼而，如圖6(b)所示，對半導體晶圓30進行切割。具體而言，在於附有燒結接合用片材之切割帶X保持有半導體晶圓30之狀態下，使用切割裝置等旋轉刀片切割半導體晶圓30而單片化為半導體晶片單元(圖中模式性地以粗實線表示切斷部位)。藉此，形成伴有晶片尺寸之燒結接合用片材10之半導體晶片C。
然後，視需要經過使用水等洗淨液將伴有附有燒結接合用片材之半導體晶片C之切割帶20中之半導體晶片C側洗淨之清潔步驟後，自切割帶20拾取附有燒結接合用片材之半導體晶片C(拾取步驟)。例如，針對拾取對象之附有燒結接合用片材之半導體晶片C，於切割帶20之圖中下側，使拾取機構之銷構件(省略圖示)上升，隔著切割帶20而頂起後，藉由吸附治具(省略圖示)進行吸附保持。
繼而，如圖3(a)所示，將半導體晶片C暫時固定於支持基板S(暫時固定步驟)，如圖3(b)所示，藉由經過用於燒結接合之高溫加熱過程而將半導體晶片C接合於支持基板S(燒結接合步驟)。關於該等步驟之具體之實施態樣及具體之條件，與上文參照圖3(a)及圖3(b)關於使用燒結接合用片材10進行之半導體裝置製造方法中之暫時固定步驟及燒結接合步驟所述者相同。
繼而，如圖4(a)所示，將半導體晶片C之上述電極墊(省略圖示)與支持基板S所具有之端子部(省略圖示)視需要經由接合線W進行電性連接(線接合步驟)。繼而，如圖4(b)所示，形成用以保護支持基板S上之半導體晶片C或接合線W之密封樹脂R(密封步驟)。關於該等步驟之具體之實施態樣及具體之條件，與上文參照圖4(a)及圖4(b)關於使用燒結接合用片材10進行之半導體裝置製造方法中之線接合步驟及密封步驟所述者相同。
以如上之方式，可經過使用附有燒結接合用片材之切割帶X之過程而製造半導體裝置。
關於燒結接合用片材10之黏著層11或形成其之燒結接合用組合物中所含之含有導電性金屬之燒結性粒子，如上所述，具有平均粒徑為2 μm以下且粒徑100 nm以下之粒子之比率為40質量%以上且未達80質量%之粒度分佈構成。如上所述，該比率較佳為45質量%以上，更佳為48質量%以上，且較佳為70質量%以下，更佳為65質量%以下。燒結性粒子之此種粒度分佈構成適於使形成黏著層11之燒結接合用組合物經過燒結接合製程所形成之燒結層謀求高密度化。根據平均粒徑2 μm以下之燒結性粒子之上述粒度分佈構成，於形成黏著層11之燒結接合用組合物中之燒結性粒子之含有比率例如為較大之85質量%以上之情形時，可認為粒徑100 nm以下之粒子群及粒徑超過100 nm之粒子群於組合物中容易呈現藉由燒結容易形成高密度之燒結層12之堆積狀態。
又，存在由包含含有導電性金屬之燒結性粒子之組合物形成之燒結層12之密度越高，燒結層12中可獲得越高之接合可靠性之傾向。適於實現利用高密度之燒結層12之燒結接合之黏著層11或形成其之燒結接合用組合物適於燒結層12中實現較高之接合可靠性。
如上所述，上述之燒結接合用片材10之黏著層11或形成其之燒結接合用組合物適於實現利用高密度之燒結層12之燒結接合，因此適於燒結層12中實現較高之接合可靠性。
如上所述，燒結接合用片材10之黏著層11或形成其之燒結接合用組合物中之燒結性粒子之含有比率較佳為90~98質量%，更佳為92~98質量%，更佳為94~98質量%。此種構成於謀求所形成之燒結層12之高密度化之方面較佳。
如上所述，燒結接合用片材10之黏著層11或形成其之燒結接合用組合物經過300℃、40 MPa、及2.5分鐘之條件下之燒結後之空隙率較佳為10%以下，更佳為8%以下，更佳為6%以下，更佳為4%以下。此種構成於謀求所形成之燒結層12之高密度化之方面較佳。
如上所述，燒結接合用片材10之黏著層11或形成其之燒結接合用組合物經過300℃、40 MPa、及2.5分鐘之條件下之燒結後的藉由奈米壓痕法所測定之25℃下之彈性模數較佳為60 GPa以上，更佳為65 GPa以上，更佳為70 GPa以上，更佳為75 GPa以上。伴有此種硬度之燒結層12於實現較高之接合可靠性之方面較佳。
如上所述，燒結接合用片材10之黏著層11或形成其之燒結接合用組合物包含含有導電性金屬之上述燒結性粒子，並且較佳為包含熱分解性高分子黏合劑，且該熱分解性高分子黏合劑之重量平均分子量較佳為10000以上。根據該等構成，於上述之暫時固定步驟中之暫時固定溫度、即作為包含70℃及其附近之溫度範圍之50~90℃下，例如利用熱分解性高分子黏合劑之黏彈性性而容易確保黏著層11之凝聚力，因此容易確保黏著層11之接著力。
如上所述，燒結接合用片材10之黏著層11或形成其之燒結接合用組合物中所含之熱分解性高分子黏合劑較佳為聚碳酸酯樹脂及/或丙烯酸系樹脂。聚碳酸酯樹脂及丙烯酸系樹脂容易以於300℃左右之溫度下進行分解、揮散之高分子黏合劑之形式準備，因此該構成於減少使用燒結接合用片材10進行燒結接合之支持基板S與半導體晶片C之間所形成之燒結層12中之有機殘渣之方面較佳。存在燒結層12中之有機殘渣越少，該燒結層12越堅固之傾向，因此該燒結層12中容易獲得優異之接合可靠性。
燒結接合用片材10係以容易以均勻之厚度製作之片材之形態供給燒結接合用材料者，因此根據燒結接合用片材10，可利用均勻之厚度之燒結層12將支持基板S與半導體晶片C接合。利用均勻之厚度之燒結層12之燒結接合於實現半導體晶片C對支持基板S之較高之接合可靠性之方面較佳。
又，燒結接合用片材10係以不易流動化之片材之形態供給燒結接合用材料者，因此適於一面抑制燒結金屬自作為接合對象物之支持基板S與半導體晶片C之間的滲出或燒結金屬向半導體晶片C側面之攀爬一面對支持基板S燒結接合半導體晶片C。抑制此種滲出或攀爬於提高伴有燒結接合之半導體裝置中之良率之方面較佳。 [實施例]
[實施例1] 於其攪拌模式下使用混合攪拌機(商品名「HM-500」，Keyence股份有限公司製造)，將作為燒結性粒子之第1銀粒子(平均粒徑60 nm，粒徑分佈5~100 nm，DOWA Electronics股份有限公司製造)35.86質量份、作為燒結性粒子之第2銀粒子(平均粒徑1100 nm，粒徑分佈400~5000 nm，三井金屬礦業股份有限公司製造)23.90質量份、作為熱分解性高分子黏合劑之聚碳酸酯樹脂(商品名「QPAC40」，重量平均分子量為150000，於常溫下為固體，Empower Materials公司製造)0.87質量份、作為低沸點黏合劑之異𦯉基環己醇(商品名「Terusolve MTPH」，於常溫下為液體，Nippon Terpene Chemicals股份有限公司製造)3.47質量份、及作為溶劑之甲基乙基酮35.91質量份進行混合，而製備清漆。攪拌時間係設為3分鐘。然後，將所獲得之清漆塗佈於脫模處理膜(商品名「MRA50」，三菱樹脂股份有限公司製造)後使其乾燥，形成燒結接合用之厚度40 μm之黏著層、即燒結接合用組合物之厚度40 μm之片材體。乾燥溫度係設為110℃，乾燥時間係設為3分鐘。以如上之方式，製作具有包含燒結性粒子、熱分解性高分子黏合劑、及低沸點黏合劑之黏著層之實施例1之燒結接合用片材。實施例1之燒結接合用片材(燒結接合用組合物)中之燒結性粒子之含有比率為93.2質量%，該燒結性粒子中之粒徑100 nm以下之粒子之比率為60質量%。將關於此種實施例1之燒結接合用片材之組成示於表1(關於後述之實施例及比較例亦相同。又，表1中，表示組成之各數值之單位為相對之“質量份”)。
[實施例2] 於其攪拌模式下使用混合攪拌機(商品名「HM-500」，Keyence股份有限公司製造)，將作為燒結性粒子之第1銀粒子(平均粒徑60 nm，粒徑分佈5~100 nm，DOWA Electronics股份有限公司製造)40.86質量份、作為燒結性粒子之第3銀粒子(平均粒徑800 nm，粒徑分佈300~3500 nm，三井金屬礦業股份有限公司製造)27.24質量份、作為熱分解性高分子黏合劑之聚碳酸酯樹脂(商品名「QPAC40」，重量平均分子量為150000，於常溫下為固體，Empower Materials公司製造)0.75質量份、作為低沸點黏合劑之異𦯉基環己醇(商品名「Terusolve MTPH」，於常溫下為液體，Nippon Terpene Chemicals股份有限公司製造)3.02質量份、及作為溶劑之甲基乙基酮28.13質量份進行混合，而製備清漆。攪拌時間係設為3分鐘。然後，將所獲得之清漆塗佈於脫模處理膜(商品名「MRA50」，三菱樹脂股份有限公司製造)後使其乾燥，形成燒結接合用之厚度40 μm之黏著層、即燒結接合用組合物之厚度40 μm之片材體。乾燥溫度係設為110℃，乾燥時間係設為3分鐘。以如上之方式，製作具有包含燒結性粒子、熱分解性高分子黏合劑、及低沸點黏合劑之黏著層之實施例2之燒結接合用片材。實施例2之燒結接合用片材(燒結接合用組合物)中之燒結性粒子之含有比率為95質量%，該燒結性粒子中之粒徑100 nm以下之粒子之比率為60質量%。
[實施例3] 代替第3銀粒子(平均粒徑800 nm，三井金屬礦業股份有限公司製造)27.24質量份，使用第4銀粒子(平均粒徑300 nm，粒徑分佈145~1700 nm，DOWA Electronics股份有限公司製造)27.24質量份，除此以外，以與實施例2之燒結接合用片材相同之方式，製作實施例3之燒結接合用片材。實施例3之燒結接合用片材(燒結接合用組合物)中之燒結性粒子之含有比率為95質量%，該燒結性粒子中之粒徑100 nm以下之粒子之比率為60質量%。
[實施例4] 代替第3銀粒子(平均粒徑800 nm，三井金屬礦業股份有限公司製造)27.24質量份，使用第2銀粒子(平均粒徑1100 nm，粒徑分佈400~5000 nm，三井金屬礦業股份有限公司製造)27.24質量份，除此以外，以與實施例2之燒結接合用片材相同之方式，製作實施例4之燒結接合用片材。實施例4之燒結接合用片材(燒結接合用組合物)中之燒結性粒子之含有比率為95質量%，該燒結性粒子中之粒徑100 nm以下之粒子之比率為60質量%。
[實施例5] 將第1銀粒子(平均粒徑60 nm，粒徑分佈5~100 nm，DOWA Electronics股份有限公司製造)之調配量設為34.05質量份代替40.86質量份，及代替第3銀粒子(平均粒徑800 nm，三井金屬礦業股份有限公司製造)27.24質量份，使用第4銀粒子(平均粒徑300 nm，粒徑分佈145~1700 nm，DOWA Electronics股份有限公司製造)34.05質量份，除此以外，以與實施例2之燒結接合用片材相同之方式，製作實施例5之燒結接合用片材。實施例5之燒結接合用片材(燒結接合用組合物)中之燒結性粒子之含有比率為95質量%，該燒結性粒子中之粒徑100 nm以下之粒子之比率為50質量%。
[實施例6] 代替第1銀粒子35.86質量份及第2銀粒子23.90質量份，使用第5銀粒子(平均粒徑20 nm，粒徑分佈1~50 nm，DOWA Electronics股份有限公司製造)41.83質量份及第6銀粒子(平均粒徑500 nm，粒徑分佈80~3000 nm，三井金屬礦業股份有限公司製造)17.93質量份，除此以外，以與實施例1之燒結接合用片材相同之方式，製作實施例6之燒結接合用片材。實施例6之燒結接合用片材(燒結接合用組合物)中之燒結性粒子之含有比率為93.2質量%，該燒結性粒子中之粒徑100 nm以下之粒子之比率為70質量%。
[比較例1] 代替第1銀粒子40.86質量份及第3銀粒子27.24質量份，使用第4銀粒子(平均粒徑300 nm，粒徑分佈145~1700 nm，DOWA Electronics股份有限公司製造)68.10質量份，除此以外，以與實施例2之燒結接合用片材相同之方式，製作比較例1之燒結接合用片材。比較例1之燒結接合用片材(燒結接合用組合物)中之燒結性粒子之含有比率為95質量，該燒結性粒子中之粒徑100 nm以下之粒子之比率為0質量%。
[比較例2] 代替第1銀粒子40.86質量份及第3銀粒子27.24質量份，使用第2銀粒子(平均粒徑1100 nm，粒徑分佈400~5000 nm，三井金屬礦業股份有限公司製造)68.10質量份，除此以外，以與實施例2之燒結接合用片材相同之方式，製作比較例2之燒結接合用片材。比較例2之燒結接合用片材(燒結接合用組合物)中之燒結性粒子之含有比率為95質量%，該燒結性粒子中之粒徑100 nm以下之粒子之比率為0質量%。
＜燒結接合樣品之製作＞ 使用實施例1~6及比較例1、2之各燒結接合用片材進行燒結接合，針對實施例1~6及比較例1、2之每個燒結接合用片材，製作後述之各評價中所使用之必需數量之樣品。
於樣品之製作中，首先，準備一面具有平面電極(5 mm見方)之矽晶片(5 mm見方，厚度350 μm)。平面電極具有矽晶片表面上之Ti層(厚度50 nm)與其上之Au層(厚度100 nm)之積層結構。繼而，對矽晶片之平面電極，使用具備壓接輥之貼合機而貼合燒結接合用片材。貼合溫度為70℃，貼合用之荷重(由壓接輥產生之壓力)為0.3 MPa，壓接輥之速度為10 mm/秒。以此種方式，獲得於單面伴有5 mm見方之燒結接合用片材或黏著層之矽晶片。
繼而，將所獲得之附有燒結接合用片材之矽晶片對整體由Ag膜(厚度5 μm)覆蓋之銅板(厚度3 mm)進行燒結接合。具體而言，於在該銅板與矽晶片之間介置燒結接合用片材之積層態樣下，使用燒結裝置(商品名「HTM-3000」，伯東股份有限公司製造)進行燒結步驟。本步驟中，對燒結接合對象物沿其厚度方向負載之加壓力為40 MPa(實施例1~5及比較例1、2之燒結接合用片材)或10 MPa(實施例6之燒結接合用片材)，燒結用之加熱溫度為300℃，加熱時間為2.5分鐘。
以如上之方式，針對實施例1~6及比較例1、2之每個燒結接合用片材，製作必需數量之燒結接合樣品。
＜燒結後之空隙率＞ 針對實施例1~6及比較例1、2之每個燒結接合用片材，以如下之方式，調查燒結接合樣品中之燒結層之空隙率。具體而言，首先，藉由機械研磨，使燒結接合樣品中沿著矽晶片對角線之剖面露出。繼而，對該露出剖面，使用離子拋光裝置(商品名「Cross Section Polisher SM-09010」，日本電子股份有限公司製造)進行離子拋光。繼而，使用場發射型掃描電子顯微鏡SU8020(日立高新技術股份有限公司製造)，對該露出剖面中之燒結層區域內之SEM圖像(利用掃描式電子顯微鏡獲得之圖像)進行拍攝，獲得反射電子像作為圖像資料。拍攝條件係將加速電壓設為5 kV，將倍率設為2000倍。繼而，對所獲得之圖像資料，使用圖像解析軟體ImageJ，實施二值化為金屬部分與空隙部分或氣孔部分之自動二值化處理。然後，根據該二值化後之圖像求出空隙部分之合計面積及整體(金屬部分+空隙部分)之面積，用整體面積除以空隙部分之合計面積而算出空隙率(%)。將其結果示於表1。
＜利用奈米壓痕法獲得之彈性模數＞ 針對實施例1~6及比較例1、2之每個燒結接合用片材，以如下之方式，藉由奈米壓痕法調查燒結接合樣品中之燒結層之彈性模數。具體而言，首先，藉由機械研磨，使燒結接合樣品中沿著矽晶片對角線之剖面露出。繼而，對該露出剖面，使用離子拋光裝置(商品名「Cross Section Polisher SM-09010」，日本電子股份有限公司製造)進行離子拋光。繼而，於該露出剖面中之燒結層區域內之合計3點，使用奈米壓痕儀(商品名「Triboindenter」，Hysitron公司製造)，進行奈米壓痕試驗，測定彈性模數。測定點係於樣品露出剖面之燒結層區域中於燒結層面內方向上以20 μm間隔分離之3點，其正中之測定點位於燒結層區域之中央。本測定中，測定模式係設為單一壓入測定，測定溫度係設為25℃，使用壓頭係設為Berkovich(三角錐)型之金剛石壓頭，壓頭對測定對象物之壓入深度係設為2 μm，該壓頭之壓入速度係設為200 nm/秒，壓頭自測定對象物之拉起速度係設為200 nm/秒。將於此種奈米壓痕試驗後利用使用裝置導出之上述3點處之彈性模數(GPa)之平均值示於表1。
＜接合可靠性＞ 針對實施例1~6及比較例1、2之每個燒結接合用片材，以如下之方式，調查燒結接合樣品中之燒結層之接合可靠性。具體而言，首先，使用冷熱衝擊試驗機(商品名「TSE-103ES」，Espec股份有限公司製造)，對樣品施加500循環之-40℃~200℃之溫度範圍內之冷熱衝擊。1循環之溫度分佈中包含-40℃下之15分鐘之保持期間及200℃下之15分鐘之保持期間。繼而，使用超音波攝影裝置(商品名「FineSAT II」，Hitachi Kenki FineTech股份有限公司製造)，進行用以確認燒結接合樣品中之銅板與矽晶片之間的利用燒結層之接合狀態之拍攝。該拍攝中，作為轉換器之探針使用PQ-50-13：WD[頻率50 MHz]。於所獲得之圖像中，維持接合狀態之區域以灰色表示且產生剝離之區域以白色表示，算出接合區域總面積相對於整體面積之比率作為接合率(%)。將其結果示於表1。
[評價] 利用實施例1~6之燒結接合用片材(燒結接合用組合物)時，相較於利用比較例1、2之燒結接合用片材而言，可於接合對象物間形成高密度且高彈性模數之燒結層，可實現接合可靠性較高之燒結接合。關於燒結性粒子之含有比率，實施例1、6之燒結接合用片材與比較例1、2之燒結接合用片材為相同程度，實施例2~5之燒結接合用片材與比較例1、2之燒結接合用片材相同。又，實施例1~5之燒結接合用片材之燒結接合樣品之燒結層、及比較例1、2之燒結接合用片材之燒結接合樣品之燒結層係經過相同之燒結條件(300℃、40 MPa、2.5分鐘)而形成者，實施例6之燒結接合用片材之燒結接合樣品之燒結層係經過與比較例1、2之燒結接合用片材之燒結接合樣品之燒結層之比較顯著較低之加壓力條件(如上所述為10 MPa)而形成者。儘管如此，利用實施例1~6之燒結接合用片材時，與利用比較例1、2之燒結接合用片材之情形相比，可形成空隙率顯著較低而為高密度且彈性模數顯著較高之燒結層，可實現上述冷熱衝擊試驗後之接合率顯著較高之燒結接合。
[表1]
作為以上之總結，以下以附記之形式列記本發明之構成及其變化。
[附記1] 一種燒結接合用組合物，其包含含有導電性金屬之燒結性粒子，該燒結性粒子之平均粒徑為2 μm以下，且粒徑100 nm以下之粒子之比率為40質量%以上且未達80質量%。 [附記2] 如附記1所記載之燒結接合用組合物，其中上述燒結性粒子之上述平均粒徑為1.5 μm以下、1.2 μm以下、1 μm以下、700 nm以下、或500 nm以下。 [附記3] 如附記1或2所記載之燒結接合用組合物，其中上述燒結性粒子之上述平均粒徑為70 nm以上、100 nm以上、或200 nm以上。 [附記4] 如附記1至3中任一項所記載之燒結接合用組合物，其中上述燒結性粒子中之粒徑100 nm以下之粒子之比率為45質量%以上或48質量%以上。 [附記5] 如附記1至4中任一項所記載之燒結接合用組合物，其中上述燒結性粒子中之粒徑100 nm以下之粒子之比率為70質量%以下或65質量%以下。 [附記6] 如附記1至5中任一項所記載之燒結接合用組合物，其中上述燒結性粒子之含有比率為90~98質量%、92~98質量%、或94~98質量%。 [附記7] 如附記1至6中任一項所記載之燒結接合用組合物，其經過300℃、40 MPa、及2.5分鐘之條件下之燒結後之空隙率為10%以下、8%以下、6%以下、或4%以下。 [附記8] 如附記1至7中任一項所記載之燒結接合用組合物，其經過300℃、40 MPa、及2.5分鐘之條件下之燒結後的藉由奈米壓痕法所測定之25℃下之彈性模數為60 GPa以上、65 GPa以上、70 GPa以上、或75 GPa以上。 [附記9] 如附記1至8中任一項所記載之燒結接合用組合物，其進而包含熱分解性高分子黏合劑。 [附記10] 如附記9所記載之燒結接合用組合物，其中上述熱分解性高分子黏合劑之重量平均分子量為10000以上。 [附記11] 如附記9或10所記載之燒結接合用組合物，其中上述熱分解性高分子黏合劑為聚碳酸酯樹脂及/或丙烯酸系樹脂。 [附記12] 如附記1至11中任一項所記載之燒結接合用組合物，其中上述燒結性粒子包含選自由銀、銅、氧化銀、及氧化銅所組成之群中之至少一種。 [附記13] 如附記1至12中任一項所記載之燒結接合用組合物，其70℃下之黏度為5×103 ~1×107 Pa・s或1×104 ~1×106 Pa・s。 [附記14] 一種燒結接合用片材，其具備如附記1至13中任一項所記載之燒結接合用組合物所形成之黏著層。 [附記15] 如附記14所記載之燒結接合用片材，其中上述黏著層之23℃下之厚度為5 μm以上或10 μm以上。 [附記16] 如附記14或15所記載之燒結接合用片材，其中上述黏著層之23℃下之厚度為100 μm以下或80 μm以下。 [附記17] 一種附有燒結接合用片材之切割帶，其具備： 具有包含基材及黏著劑層之積層結構之切割帶、及 上述切割帶中之上述黏著劑層上之如附記14至16中任一項所記載之燒結接合用片材。
10‧‧‧燒結接合用片材 11‧‧‧黏著層 12‧‧‧燒結層 20‧‧‧切割帶 21‧‧‧基材 22‧‧‧黏著劑層 30‧‧‧半導體晶圓 C‧‧‧半導體晶片 D‧‧‧照射區域 L‧‧‧剝離襯墊 R‧‧‧密封樹脂 S‧‧‧支持基板 T1‧‧‧晶片固定用帶 T1a‧‧‧晶片固定用帶之黏著面 W‧‧‧接合線 X‧‧‧附有燒結接合用片材之切割帶
圖1係本發明之一實施形態之燒結接合用片材之部分剖面模式圖。 圖2(a)~(c)表示使用圖1所示之燒結接合用片材進行之半導體裝置製造方法中之一部分步驟。 圖3(a)、(b)表示使用圖1所示之燒結接合用片材進行之半導體裝置製造方法中之一部分步驟。 圖4(a)、(b)表示使用圖1所示之燒結接合用片材進行之半導體裝置製造方法中之一部分步驟。 圖5係本發明之一實施形態之附有燒結接合用片材之切割帶之部分剖面模式圖。 圖6(a)、(b)表示使用圖5所示之附有燒結接合用片材之切割帶進行之半導體裝置製造方法中之一部分步驟。
10‧‧‧燒結接合用片材
20‧‧‧切割帶
21‧‧‧基材
22‧‧‧黏著劑層
D‧‧‧照射區域
X‧‧‧附有燒結接合用片材之切割帶

Claims (10)

  1. 一種燒結接合用組合物，其包含含有導電性金屬之燒結性粒子，該燒結性粒子之平均粒徑為70nm以上且1μm以下，且粒徑100nm以下之粒子之比率為40質量%以上且未達80質量%。
  2. 如請求項1之燒結接合用組合物，其中上述燒結性粒子之含有比率為90~98質量%。
  3. 如請求項1之燒結接合用組合物，其經過300℃、40MPa、及2.5分鐘之條件下之燒結後之空隙率為10%以下。
  4. 如請求項1之燒結接合用組合物，其經過300℃、40MPa、及2.5分鐘之條件下之燒結後的藉由奈米壓痕法所測定之25℃下之彈性模數為60GPa以上。
  5. 如請求項1之燒結接合用組合物，其進而包含熱分解性高分子黏合劑。
  6. 如請求項5之燒結接合用組合物，其中上述熱分解性高分子黏合劑之重量平均分子量為10000以上。
  7. 如請求項5之燒結接合用組合物，其中上述熱分解性高分子黏合劑為 聚碳酸酯樹脂及丙烯酸系樹脂之至少一種。
  8. 如請求項1至7中任一項之燒結接合用組合物，其中上述燒結性粒子包含選自由銀、銅、氧化銀、及氧化銅所組成之群中之至少一種。
  9. 一種燒結接合用片材，其具備如請求項1至8中任一項之燒結接合用組合物所形成之黏著層。
  10. 一種附有燒結接合用片材之切割帶，其具備：具有包含基材及黏著劑層之積層結構之切割帶、及上述切割帶中之上述黏著劑層上之如請求項9之燒結接合用片材。
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