JP7252798B2 - 焼結接合用シートおよび基材付き焼結接合用シート - Google Patents
焼結接合用シートおよび基材付き焼結接合用シート Download PDFInfo
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- JP7252798B2 JP7252798B2 JP2019047961A JP2019047961A JP7252798B2 JP 7252798 B2 JP7252798 B2 JP 7252798B2 JP 2019047961 A JP2019047961 A JP 2019047961A JP 2019047961 A JP2019047961 A JP 2019047961A JP 7252798 B2 JP7252798 B2 JP 7252798B2
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Description
焼結性粒子P1としての銀粒子 56.35質量部と、高分子バインダー(熱分解性高分子バインダー)としてのポリカーボネート樹脂(商品名「QPAC40」,重量平均分子量は150000,常温で固体,Empower Materials社製)1.7質量部と、低分子バインダー(低沸点バインダー)としてのイソボルニルシクロヘキサノール(商品名「テルソルブMTPH」,常温で液体,日本テルペン化学工業株式会社製)2.55質量部と、溶剤としてのメチルエチルケトン 39.4質量部とを、ハイブリッドミキサー(商品名「HM-500」,株式会社キーエンス製)をその撹拌モードで使用して混合し、ワニスを調製した。撹拌時間は3分間とした。焼結性粒子P1としての前記の銀粒子は、第1の銀粒子(平均粒径60nm,DOWAエレクトロニクス株式会社製)と第2の銀粒子(平均粒径1100nm,三井金属鉱業株式会社製)とを質量比9:1で含むものである。そして、得られたワニスを、基材としての離型処理フィルム(商品名「MRA38」,三菱ケミカル株式会社製)に塗布した後に乾燥させて、厚さ55μmの焼結接合用シートを形成した。乾燥温度は110℃とし、乾燥時間は3分間とした。焼結接合用シートにおける焼結性粒子含有割合は93.0質量%である。以上のようにして、焼結性粒子と高分子バインダーと低分子バインダーとを含む実施例1の焼結接合用シートを基材上に作製した。実施例1の焼結接合用シートに関する組成を表1に掲げる(後記の実施例および比較例についても同様である。また、表1において、組成を表す各数値の単位は、相対的な“質量部”である)。
焼結性粒子P1の配合量を56.35質量部に代えて56.16質量部としたこと、ポリカーボネート樹脂(商品名「QPAC40」,Empower Materials社製)の配合量を1.7質量部に代えて2.63質量部としたこと、イソボルニルシクロヘキサノール(商品名「テルソルブMTPH」,日本テルペン化学工業株式会社製)の配合量を2.55質量部に代えて1.76質量部としたこと、およびメチルエチルケトンの使用量を39.4質量部に代えて39.45質量部としたこと、以外は実施例1の焼結接合用シートと同様にして、実施例2の焼結接合用シートを作製した。実施例2の焼結接合用シートにつき、焼結性粒子含有割合は92.7質量%であり、厚さは52μmである。
焼結性粒子P1の配合量を56.35質量部に代えて56.98質量部としたこと、ポリカーボネート樹脂(商品名「QPAC40」,Empower Materials社製)の配合量を1.7質量部に代えて0.75質量部としたこと、イソボルニルシクロヘキサノール(商品名「テルソルブMTPH」,日本テルペン化学工業株式会社製)の配合量を2.55質量部に代えて2.98質量部としたこと、および、メチルエチルケトンの使用量を39.4質量部に代えて39.29質量部としたこと、以外は実施例1の焼結接合用シートと同様にして、実施例3の焼結接合用シートを作製した。実施例3の焼結接合用シートにつき、焼結性粒子含有割合は93.9質量%であり、厚さは53μmである。
焼結性粒子P156.35質量部に代えて焼結性粒子P2としての銅粒子(平均粒径200nm,三井金属鉱業株式会社製)66.11質量部を用いたこと、ポリカーボネート樹脂(商品名「QPAC40」,Empower Materials社製)の配合量を1.7質量部に代えて3.57質量部としたこと、イソボルニルシクロヘキサノール(商品名「テルソルブMTPH」,日本テルペン化学工業株式会社製)の配合量を2.55質量部に代えて5.35質量部としたこと、および、メチルエチルケトンの使用量を39.4質量部に代えて24.97質量部としたこと、以外は実施例1の焼結接合用シートと同様にして、実施例4の焼結接合用シートを作製した。実施例4の焼結接合用シートにつき、焼結性粒子含有割合は88.1質量%であり、厚さは68μmである。
焼結性粒子P1の配合量を56.35質量部に代えて56.69質量部としたこと、ポリカーボネート樹脂を用いなかったこと、イソボルニルシクロヘキサノール(商品名「テルソルブMTPH」,日本テルペン化学工業株式会社製)の配合量を2.55質量部に代えて3.98質量部としたこと、および、メチルエチルケトンの使用量を39.4質量部に代えて39.33質量部としたこと、以外は実施例1の焼結接合用シートと同様にして、実施例5の焼結接合用シートを作製した。実施例5の焼結接合用シートにつき、焼結性粒子含有割合は93.4質量%であり、厚さは55μmである。
焼結性粒子P1の配合量を56.35質量部に代えて55.99質量部としたこと、ポリカーボネート樹脂(商品名「QPAC40」,Empower Materials社製)の配合量を1.7質量部に代えて3.64質量部としたこと、イソボルニルシクロヘキサノール(商品名「テルソルブMTPH」,日本テルペン化学工業株式会社製)の配合量を2.55質量部に代えて0.91質量部としたこと、および、メチルエチルケトンの使用量を39.4質量部に代えて39.46質量部としたこと、以外は実施例1の焼結接合用シートと同様にして、比較例1の焼結接合用シートを作製した。比較例1の焼結接合用シートにつき、焼結性粒子含有割合は92.5質量%であり、厚さは57μmである。
焼結性粒子P1の配合量を56.35質量部に代えて56.69質量部としたこと、ポリカーボネート樹脂とイソボルニルシクロヘキサノールを用いなかったこと、および、メチルエチルケトンの使用量を39.4質量部に代えて43.31質量部としたこと、以外は実施例1の焼結接合用シートと同様にして、比較例2の焼結接合用シートを作製した。比較例2の焼結接合用シートの厚さは48μmである。
実施例1~5および比較例1,2の各焼結接合用シート(片面に基材を伴う)について、ダイプラ・ウィンテス株式会社製の斜め切削装置であるSAICAS DN-20型を使用して行うSAICAS法により、23℃でのせん断強度(第1せん断強度)を測定した。本測定における斜め切削のための切刃は、刃幅が1mmであり、すくい角が10°であり、且つ逃げ角が10°である。本測定は、温度条件23℃の下、定速度モード(切刃の水平速度は10μm/秒であり且つ垂直速度は0.5μm/秒)で行った。また、温度条件を23℃に代えて100℃としたこと以外は同様にして、実施例1~5および比較例1,2の各焼結接合用シート(片面に基材を伴う)について、SAICAS DN-20型を使用して行うSAICAS法により、100℃でのせん断強度(第2せん断強度)を測定した。これら測定結果を表1に掲げる。材料層に対する斜め切削における、切刃に作用する水平力FHと、せん断面の面積Dと、せん断角θ(斜め切削による仕上げ面に対するせん断面のなす角度)とから、せん断強度FSは、FS=(FH/2D)cotθの計算式により導出することができ、焼結接合用シートに対する斜め切削過程においてシート厚さ全体に対してシート露出面からの深さ30~70%の領域内で示されるFSの最大値を、各測定に係るせん断強度(MPa)とした(100℃ではシート形状を保持できなかった比較例2の焼結接合用シートについては、第2せん断強度を測定できなかった)。
実施例1~5および比較例1,2の各焼結接合用シート(片面に基材を伴う)について、次のようにして裁断性を調べた。まず、テフロンテープ(商品名「ニトフロン No.900 UL」,厚さ100μm,日東電工株式会社製)上に、基材を伴う焼結接合用シートをその基材側を介して密着させて載置した。次に、その焼結接合用シート上に5mm角のシリコンチップ(厚さ200μm)を載せた。焼結接合用シートに伴う基材は、三菱ケミカル株式会社製の「MRA38」(厚さ38μm)である。この後、焼結接合用シート上のチップに対し、焼結接合用シートに向けての加圧処理を行った。この加圧処理において、荷重は10MPaであり、加圧時間は5秒間であり、加圧温度は70℃(実施例1~3,5と比較例1,2)または90℃(実施例4)である。このような加圧処理後、焼結接合用シートにおけるチップ周りの裁断状態を観察した。そして、焼結接合用シートの裁断性につき、焼結接合用シートにおいてチップ周り全周にわたって切れ込みが生じた場合(即ち、チップに伴う焼結接合用シート小片を生じるように焼結接合用シートが裁断された場合)を“良”と評価し、焼結接合用シートにおいてチップ周り全周にわたる切れ込みが生じなかった場合を“不良”と評価した。その評価結果を表1に掲げる。
SAICAS法により測定される23℃でのせん断強度が2~40MPaである実施例1~5の焼結接合用シートでは、上述の裁断性評価試験において良好な裁断性を示した。
導電性金属含有の焼結性粒子およびバインダー成分を含み、且つ、SAICAS法により測定される23℃でのせん断強度が2~40MPaである、焼結接合用シート。
〔付記2〕
SAICAS法により測定される100℃でのせん断強度が20MPa以下である、付記1に記載の焼結接合用シート。
〔付記3〕
前記バインダー成分は、高分子バインダーおよび/または低分子バインダーを含む、付記1または2に記載の焼結接合用シート。
〔付記4〕
前記高分子バインダーは、熱分解性高分子バインダーを含む、付記3に記載の焼結接合用シート。
〔付記5〕
前記高分子バインダーの重量平均分子量は10000以上である、付記3または4に記載の焼結接合用シート。
〔付記6〕
前記高分子バインダーは、ポリカーボネート樹脂および/またはアクリル樹脂を含む、付記3から5のいずれか一つに記載の焼結接合用シート。
〔付記7〕
前記低分子バインダーは、前記高分子バインダーの熱分解開始温度よりも沸点が低い低沸点バインダーを含む、付記3から6のいずれか一つに記載の焼結接合用シート。
〔付記8〕
前記焼結性粒子は、銀粒子、銅粒子、酸化銀粒子、および酸化銅粒子からなる群より選択される少なくとも一種を含む、付記1から7のいずれか一つに記載の焼結接合用シート。
〔付記9〕
前記焼結性粒子の含有割合が、60~99質量%であり、好ましくは65~98質量%、より好ましくは70~97質量%である、付記1から8のいずれか一つに記載の焼結接合用シート。
〔付記10〕
基材と、付記1から9のいずれか一つに記載の焼結接合用シートと、を含む積層構造を有する基材付き焼結接合用シート。
B 基材
10 焼結接合用シート
11 焼結接合用材料層
12 焼結層
T1,T2 加工用テープ
C チップ(半導体チップ)
S 支持基板(基板)
Claims (2)
- 導電性金属含有の焼結性粒子およびバインダー成分を含む焼結接合用シートであって、
SAICAS法により測定される23℃でのせん断強度が2~40MPaであり、
SAICAS法により測定される100℃でのせん断強度が20MPa以下であり、
前記バインダー成分は、高分子バインダーおよび低分子バインダーを含み、
前記焼結接合用シートに含まれる前記高分子バインダーの含有割合は、0.1~35700/7503質量%であり、
前記焼結接合用シートに含まれる前記焼結性粒子の含有割合は、88.1~99質量%である、焼結接合用シート。 - 基材と、請求項1に記載の焼結接合用シートと、を含む積層構造を有する基材付き焼結接合用シート。
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TW109107971A TWI837325B (zh) | 2019-03-15 | 2020-03-11 | 燒結接合用片材及附有基材之燒結接合用片材 |
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JP5558547B2 (ja) | 2012-12-05 | 2014-07-23 | ニホンハンダ株式会社 | ペースト状金属微粒子組成物、固形状金属または固形状金属合金の製造方法、金属製部材の接合方法、プリント配線板の製造方法および電気回路接続用バンプの製造方法 |
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