TW202002109A - 半導體裝置製造方法 - Google Patents

半導體裝置製造方法 Download PDF

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TW202002109A
TW202002109A TW108113304A TW108113304A TW202002109A TW 202002109 A TW202002109 A TW 202002109A TW 108113304 A TW108113304 A TW 108113304A TW 108113304 A TW108113304 A TW 108113304A TW 202002109 A TW202002109 A TW 202002109A
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bonding
sinter
sheet
semiconductor
manufacturing
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TW108113304A
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English (en)
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TWI798420B (zh
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三田亮太
市川智昭
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日商日東電工股份有限公司
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    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Abstract

本發明提供一種適於在經由半導體晶片之燒結接合之半導體裝置製造方法中，一面降低燒結接合用材料之損耗一面高效率地進行燒結接合用材料對半導體晶片之供給之技術。 本製造方法包含如下步驟：將具有基材B與燒結接合用片材10之積層結構之片材體X中之燒結接合用片材10之側對排列於加工用膠帶T1上之複數個晶片C(半導體晶片)貼合之後，將基材B自燒結接合用片材10剝離；將加工用膠帶T1上之晶片C與燒結接合用片材10中密接於該晶片C之部分一同地拾取，獲得附有燒結接合用材料層之晶片C；將附有燒結接合用材料層之晶片C介隔該燒結接合用材料層11暫時固定於基板；及自介置於被暫時固定之晶片C與基板之間之燒結接合用材料層11經由加熱過程，形成燒結層，而將該晶片C接合於基板。

Description

半導體裝置製造方法
本發明係關於一種製造所謂功率半導體裝置等半導體裝置之方法。
於半導體裝置之製造中，作為用以對引線框架或絕緣電路基板等支持基板將半導體晶片一面獲得與支持基板側之電性連接一面進行黏晶之技術，已知有於支持基板與晶片之間形成Au-Si共晶合金層實現接合狀態之技術、或利用焊料或含有導電性粒子之樹脂作為接合材之技術。
另一方面，負責電力之供給控制之功率半導體裝置之普及於近年來較為顯著。功率半導體裝置起因於動作時之通電量較大而發熱量較大之情形較多。因此，於功率半導體裝置之製造中，對於將半導體晶片一面獲得與支持基板側之電性連接一面黏晶於支持基板之技術，要求高溫動作時亦能夠實現可靠性較高之接合狀態。於採用SiC或GaN作為半導體材料，謀求高溫動作化之功率半導體裝置中，此種要求尤為強烈。而且，為了應對此種要求，作為伴有電性連接之黏晶技術，提出有使用含有燒結性粒子與溶劑等之燒結接合用之組合物之技術。
於使用含有燒結性粒子之燒結接合用材料進行之黏晶中，首先，將半導體晶片介隔燒結接合用材料以特定之溫度、負載條件載置於支持基板之晶片接合預定部位。此後，以於支持基板與其上之半導體晶片之間產生燒結接合用材料中之溶劑之揮發等且於燒結性粒子間進行燒結之方式，進行特定之溫度、加壓條件下之加熱步驟。藉此，於支持基板與半導體晶片之間形成燒結層，將半導體晶片對於支持基板一面進行電性連接一面進行機械接合。此種技術例如記載於下述專利文獻1、2。 [先前技術文獻] [專利文獻]
[專利文獻1]國際公開第2008/065728號 [專利文獻2]日本專利特開2013-039580號公報
[發明所欲解決之問題]
於進行燒結接合之黏晶之半導體裝置製造過程中，先前，存在將含有燒結性粒子之糊狀組合物塗佈於每個半導體晶片之情形。然而，此種技術並非有效。
另一方面，於進行燒結接合之黏晶之半導體裝置製造過程中，考慮對已裝入複數個半導體元件之半導體晶圓貼合含有燒結性粒子之燒結接合用材料片材之後，將伴有該片材之半導體晶圓藉由刀片切割而單片化。然而，此種技術根據裝入至半導體晶圓內之元件之良率，燒結接合用材料之損耗較大。於採用SiC或GaN作為半導體材料之功率半導體裝置之製造中，例如，存在對於裝入至此種半導體材料之晶圓內之半導體元件，未能達成充分高之良率之情形，於此種情形時，於對向半導體晶片之單片化前之半導體晶圓貼合燒結接合用材料片材之技術中，燒結接合用材料之損耗相對較大。其原因在於，燒結接合用材料亦供給至不良晶片上。存在裝入至半導體晶圓內之元件之良率越低，則燒結接合用材料之損耗越增大之傾向。
本發明係基於如以上之情況而設想者，其目的在於提供一種適於一面降低燒結接合用材料之損耗一面高效率地進行燒結接合用材料對半導體晶片之供給之具備半導體晶片燒結接合部位之半導體裝置之製造方法。 [解決問題之技術手段]
藉由本發明之第1態樣提供之半導體裝置製造方法包含如以下之排列步驟、轉印步驟、拾取步驟、暫時固定步驟、及燒結接合步驟。本方法適於製造具備半導體晶片之燒結接合部位之功率半導體裝置等半導體裝置。
於排列步驟中，於具有黏著面之加工用膠帶之黏著面上排列複數個半導體晶片。相鄰之半導體晶片之間之距離根據本製造方法中使用之燒結接合用片材之黏度或厚度等，例如為50～2000 μm，較佳為50～1000 μm，更佳為50～700 μm。
於轉印步驟中，首先，將具有包含基材與燒結接合用片材之積層結構之片材體中之燒結接合用片材之側，對於加工用膠帶上之複數個半導體晶片進行壓接貼合。燒結接合用片材較佳為至少包含含有導電性金屬之燒結性粒子及黏合劑成分。繼而，一面將燒結接合用片材殘留於半導體晶片側，一面自該燒結接合用片材剝離基材。
於拾取步驟中，將加工用膠帶上之半導體晶片與燒結接合用片材中密接於該半導體晶片之部分一同地拾取，獲得附有燒結接合用材料層之半導體晶片。於較拾取步驟之前未實施用以使燒結接合用片材小片化之步驟之情形時，於拾取步驟中，燒結接合用片材小片化為每一半導體晶片之燒結接合用材料層。
於暫時固定步驟中，將附有燒結接合用材料層之半導體晶片介隔該燒結接合用材料層對基板壓接進行暫時固定。
於燒結接合步驟中，自介置於被暫時固定之半導體晶片與基板之間之燒結接合用材料層，經由加熱過程形成燒結層，而將該半導體晶片接合於基板燒結。
本半導體裝置製造方法包含如上所述之排列步驟。於該排列步驟中，對於半導體晶片，可篩選出製作製程後經由各個檢查認定為良品者、即 KGD(Known Good Die，已知良好晶粒)後排列於加工用膠帶上。因此，於本製造方法中，作為半導體晶片於轉印步驟貼附僅保持複數個KGD之加工用膠帶，且於該轉印步驟中對該等半導體晶片(KGD)一次地轉印作為燒結接合用材料之燒結接合用片材。此種本製造方法適於在燒結接合用材料對複數個半導體晶片之一次性供給時，避免燒結接合用材料對未認定為良品之半導體晶片之供給，因此，適於降低燒結接合用材料之損耗。
又，於本製造方法之轉印步驟中，如上所述，進行對於加工用膠帶上之複數個半導體晶片之片材體之燒結接合用片材(燒結接合用材料)側之貼合、及將燒結接合用片材殘留於加工用膠帶上或複數個半導體晶片上之同時之片材體基材之剝離。此種構成適於一次地高效率進行燒結接合用材料對複數個半導體晶片之各者之供給。
另外，於本製造方法中，以於該轉印步驟之基材剝離時，將燒結接合用片材殘留於複數個半導體晶片上之方式，將上述排列步驟中排列於加工用膠帶上之半導體晶片之晶片間距離、即相鄰之半導體晶片之間之距離設定得較短。該晶片間距離如上所述例如為50～2000 μm，較佳為50～1000 μm，更佳為50～700 μm。於將具有包含基材與燒結接合用片材之積層結構之片材體中之燒結接合用片材之側對加工用膠帶上之複數個半導體晶片貼合之後，以晶片間距離過長之狀態，實施進行片材體基材之剝離之步驟之情形時，於片材體基材之剝離時，燒結接合用片材之一部分伴隨基材被去除。燒結接合用片材中之該去除部分成為燒結接合用材料之損耗。於本製造方法中，以轉印步驟中不產生燒結接合用片材之此種去除之程度，根據使用之燒結接合用片材之黏度或厚度等，設定排列步驟中排列於加工用膠帶上之半導體晶片之晶片間距離。此種構成適於降低燒結接合用材料之損耗。
如以上所述，本發明之半導體裝置製造方法適於一面降低燒結接合用材料之損耗一面高效率地進行燒結接合用材料對各半導體晶片之供給。
本製造方法較佳為於轉印步驟與拾取步驟之間更包含展延步驟。於該展延步驟中，藉由將保持一次地貼合有燒結接合用片材之複數個半導體晶片之加工用膠帶暫時展延，而將複數個半導體晶片上之燒結接合用片材斷裂，小片化為每一半導體晶片之燒結接合用材料層。此種構成於拾取步驟中適當地拾取伴有已與相鄰之燒結接合用材料層分離之燒結接合用材料層之半導體晶片晶片之方面較佳。
本製造方法較佳為於轉印步驟與拾取步驟之間更包含刀片切割步驟。於該刀片切割步驟中，藉由對密接於藉由加工用膠帶保持之複數個半導體晶片之燒結接合用片材之刀片切割，而將該燒結接合用片材小片化為每一半導體晶片之燒結接合用材料層。此種構成於拾取步驟中適當地拾取伴有已與相鄰之燒結接合用材料層分離之燒結接合用材料層之半導體晶片晶片之方面較佳。
本製造方法較佳為於轉印步驟與拾取步驟之間更包含彎曲步驟。於該彎曲步驟中，藉由將保持一次地貼合有燒結接合用片材之複數個半導體晶片之加工用膠帶彎曲，而使複數個半導體晶片上之燒結接合用片材斷裂，小片化為每一半導體晶片之燒結接合用材料層。將加工用膠帶彎曲包含使加工用膠帶撓曲或彎曲。此種構成於拾取步驟中適當地拾取伴有已與相鄰之燒結接合用材料層分離之燒結接合用材料層之半導體晶片晶片之方面較佳。
燒結接合步驟中形成之燒結層之厚度處於該燒結層之平均厚度之較佳為60～140%之範圍內，更佳為80～120%之範圍內，更佳為90～110%之範圍內。燒結層之厚度越均勻，越容易於燒結層中獲得較高之接合可靠性。又，燒結接合步驟中形成之燒結層之平均厚度較佳為5～200 μm，更佳為10～150 μm。此種構成於燒結層中緩和起因於熱應力之內部應力，確保充分之熱衝擊可靠性，並且抑制與燒結接合相關之成本乃至半導體裝置之製造成本之方面較佳。
本製造方法中使用之燒結接合用片材中之燒結性粒子較佳為包含選自由銀、銅、氧化銀、及氧化銅所組成之群之至少一種。此種構成於在被燒結接合之基板與半導體晶片之間形成牢固之燒結層之方面較佳。又，燒結接合用片材中之黏合劑成分較佳為熱分解性之高分子黏合劑。
圖1至圖6係表示本發明之一實施形態之半導體裝置製造方法。本實施形態之半導體裝置製造方法係用以製造具備半導體晶片之燒結接合部位之功率半導體裝置等半導體裝置之方法，且包含如以下之排列步驟、轉印步驟、拾取步驟、暫時固定步驟、及燒結接合步驟。
於排列步驟中，如圖1所示，於加工用膠帶T1之上排列複數個晶片C。加工用膠帶T1例如具有基材與黏著劑層之積層結構，且於單面具有黏著劑層所形成之黏著面T1a。於加工用膠帶T1之黏著面T1a之周緣部，貼附有環狀框R。環狀框R係於貼附於加工用膠帶T1之狀態下，搬送臂等搬送機構搬送工件時機械性抵接之構件。晶片C係作為經由各個檢查確認為良品之KGD之半導體晶片，且貼合於加工用膠帶T1之黏著面T1a，且具有被裝入半導體元件之側之主面(於圖1中為下表面)及與其相反之背面(於圖1中為上表面)。於背面形成有作為外部電極之平面電極(省略圖示)。作為用以形成晶片C之晶片本體之構成材料，例如，可列舉碳化矽(SiC)或氮化鎵(GaN)等功率半導體裝置用之半導體材料。晶片C之厚度例如為20～1000 μm。
於排列步驟中，具體而言，於加工用膠帶T1之黏著面Ta上，複數個晶片C伴有空隙地排列於相鄰晶片間。根據下述拾取步驟中避免或抑制拾取對象之晶片C與相鄰之晶片C接觸之觀點，相鄰之晶片C之間之距離、即晶片間距離較佳為50 μm以上，更佳為100 μm以上。根據下述轉印步驟中避免由燒結接合用材料之去除造成之損耗之觀點，晶片間距離根據下述燒結接合用片材之黏度或厚度等，例如為2000 μm以下，較佳為1000 μm以下，更佳為700 μm以下。
於本半導體裝置製造方法中，繼而，如圖2所示進行轉印步驟。於本步驟中，首先，如圖2(a)及圖2(b)所示，對加工用膠帶T1上之複數個晶片C貼合片材體X。片材體X具有包含基材B與燒結接合用片材10之積層結構。基材B例如為塑膠膜。燒結接合用片材10係至少包含含有導電性金屬之燒結性粒子與黏合劑成分之片材狀之燒結接合用組合物。於本步驟中，將此種片材體X之燒結接合用片材10之側對複數個晶片C壓接進行貼合。作為用於貼合之按壓機構，例如可列舉壓接輥。貼合溫度例如處於自室溫至200℃為止之範圍，用於貼合之負載例如為0.01～10 MPa。於貼合之後，如圖2(c)所示，一面將燒結接合用片材10殘留於晶片C側，一面自該燒結接合用片材10剝離基材B。於本步驟中，可對晶片C之各者一次地供給燒結接合用材料。
燒結接合用片材10係用於將接合對象物間燒結接合者，且如上所述，係至少包含含有導電性金屬之燒結性粒子與黏合劑成分之片材狀之燒結接合用組合物。
燒結接合用片材10中之燒結性粒子係含有導電性金屬元素且能夠進行燒結之粒子。作為導電性金屬元素，例如，可列舉金、銀、銅、鈀、錫、及鎳。作為此種燒結性粒子之構成材料，例如，可列舉金、銀、銅、鈀、錫、鎳、及選自該等之群之兩種以上之金屬之合金。作為燒結性粒子之構成材料，亦可列舉氧化銀或氧化銅、氧化鈀、氧化錫等金屬氧化物。又，燒結性粒子亦可為具有核殼結構之粒子。例如，燒結性粒子亦可為具有以銅為主成分之核與以金或銀等為主成分且被覆核之殼之核殼結構之粒子。於本實施形態中，燒結性粒子較佳為包含選自由銀粒子、銅粒子、氧化銀粒子、及氧化銅粒子所組成之群之至少一種。根據形成之燒結層中實現較高之導電性及較高之導熱性之觀點，作為燒結性粒子較佳為銀粒子及銅粒子。另外，根據耐氧化性之觀點，銀粒子容易操作而較佳。例如，於半導體晶片對附有鍍銀之銅基板之燒結接合中，使用包含銅粒子之燒結材作為燒結性粒子之情形時，必須於氮氣氛圍下等惰性環境下進行燒結製程，但於使用銀粒子形成燒結性粒子之燒結材之情形時、即便於空氣氛圍下亦能夠適當地執行燒結製程。
所用之燒結性粒子之平均粒徑根據對於燒結性粒子實現較低之燒結溫度等確保良好之燒結性之觀點，較佳為2000 nm以下，更佳為800 nm以下，更佳為500 nm以下。根據對於燒結接合用片材10或用以形成該燒結接合用片材10之組合物中之燒結性粒子實現良好之分散性之觀點，燒結性粒子之平均粒徑較佳為1 nm以上，更佳為10 nm以上，更佳為50 nm以上。燒結性粒子之平均粒徑能夠藉由使用掃描式電子顯微鏡(SEM)進行之觀察而計測。
燒結接合用片材10中之燒結性粒子之含有比率根據實現可靠性較高之燒結接合之觀點，較佳為60～99質量%，更佳為65～98質量%，更佳為70～97質量%，更佳為70～95質量%。
燒結接合用片材10中之黏合劑成分係於本實施形態中至少包含熱分解性高分子黏合劑與低沸點黏合劑，亦可更包含塑化劑等其他成分。熱分解性高分子黏合劑係於燒結接合用之高溫加熱過程可熱分解之黏合劑成分，且於該加熱過程前有助於燒結接合用片材10之片材形狀之保持之要素。於本實施形態中，根據保證片材形狀保持功能之觀點，熱分解性高分子黏合劑係於常溫(23℃)下為固形之材料。作為此種熱分解性高分子黏合劑，例如，可列舉聚碳酸酯樹脂及丙烯酸樹脂。
至於作為熱分解性高分子黏合劑之聚碳酸酯樹脂，例如，可列舉於主鏈之碳酸酯基(-O-CO-O-)間不包含苯環等芳香族化合物而包含脂肪族鏈之脂肪族聚碳酸酯、及於主鏈之碳酸酯基(-O-CO-O-)間包含芳香族化合物之芳香族聚碳酸酯。作為脂肪族聚碳酸酯，例如，可列舉聚碳酸乙烯酯及聚碳酸丙烯酯。作為芳香族聚碳酸酯，可列舉於主鏈包含雙酚A結構之聚碳酸酯。
至於作為熱分解性高分子黏合劑之丙烯酸樹脂，例如，可列舉具有碳數4～18之直鏈狀或支鏈狀之烷基之丙烯酸酯及/或甲基丙烯酸酯之聚合物。以下，以「(甲基)丙烯酸」表示「丙烯酸」及/或「甲基丙烯酸」，以「(甲基)丙烯酸酯」表示「丙烯酸酯」及/或「甲基丙烯酸酯」。至於用以形成作為熱分解性高分子黏合劑之丙烯酸樹脂之(甲基)丙烯酸酯之烷基，例如，可列舉甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、及十八烷基。
作為熱分解性高分子黏合劑之丙烯酸樹脂亦可為包含來自上述(甲基)丙烯酸酯以外之其他單體之單體單元之聚合物。作為此種其他單體，例如，可列舉含有羧基之單體、酸酐單體、含有羥基之單體、含有磺酸基之單體、及含有磷酸基之單體。具體而言，作為含有羧基之單體，例如，可列舉丙烯酸酸、甲基丙烯酸酸、羧基乙基丙烯酸酯、羧基戊基丙烯酸酯、伊康酸、馬來酸、富馬酸、及丁烯酸。作為酸酐單體，例如，可列舉馬來酸酐或伊康酸酐。作為含有羥基之單體，例如，可列舉(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、及(甲基)丙烯酸4-(羥甲基)環己基甲酯。作為含有磺酸基之單體，例如，可列舉苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酸醯胺-2-甲基丙磺酸、(甲基)丙烯酸醯胺丙磺酸、磺丙基(甲基)丙烯酸酯、及(甲基)丙烯醯氧基萘磺酸。作為含有磷酸基之單體，例如可列舉2-羥基乙基丙烯醯基磷酸酯。
熱分解性高分子黏合劑之重量平均分子量較佳為10000以上。熱分解性高分子黏合劑之重量平均分子量設為藉由凝膠滲透層析法(GPC)測定且藉由聚苯乙烯換算所算出之值。
燒結接合用片材10中之熱分解性高分子黏合劑之含有比率根據適當地發揮上述片材形狀保持功能之觀點，較佳為0.5～10質量%，更佳為0.8～8質量%，更佳為1～6質量%。
燒結接合用片材10中之低沸點黏合劑設為使用動態黏彈性測定裝置(商品名「HAAKE MARS III」，Thermo Fisher Scientfic公司製造)測定之表示23℃時之黏度為1×105 Pa・s以下之液狀或半液狀者。於本黏度測定中，使用20 mmϕ之平行板作為治具，將板間間隙設為100 μm，將旋轉剪斷時之剪斷速度設為1 s-1 。
作為上述低沸點黏合劑，例如，可列舉萜烯醇類、除了萜烯醇類以外之醇類、伸烷基二醇烷基醚類、及除了伸烷基二醇烷基醚類以外之醚類。作為萜烯醇類，例如，可列舉異𦯉基環己醇、香茅醇、香葉草醇、橙花醇、香芹醇、及α-松脂醇。作為除了萜烯醇類以外之醇類，例如，可列舉戊醇、己醇、庚醇、辛醇、1-癸醇、乙二醇、二乙二醇、丙二醇、丁二醇、及2,4-二乙基-1,5戊二醇。作為伸烷基二醇烷基醚類，例如，可列舉乙二醇丁醚、二乙二醇甲醚、二乙二醇乙醚、二乙二醇丁醚、二乙二醇異丁醚、二乙二醇己醚、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇二丁醚、二乙二醇丁基甲醚、二乙二醇異丙基甲醚、三乙二醇甲醚、三乙二醇二甲醚、三乙二醇丁基甲醚、丙二醇丙基醚、二丙二醇甲醚、二丙二醇乙醚、二丙二醇丙基醚、二丙二醇丁醚、二丙二醇二甲醚、三丙二醇甲醚、及三丙二醇二甲醚。作為除了伸烷基二醇烷基醚類以外之醚類，例如，可列舉乙二醇乙醚乙酸酯、乙二醇丁醚乙酸酯、二乙二醇乙醚乙酸酯、二乙二醇丁醚乙酸酯、及二丙二醇甲醚乙酸酯。作為燒結接合用片材10中之成分，可使用一種低沸點黏合劑，亦可使用兩種以上之低沸點黏合劑。作為燒結接合用片材10中之低沸點黏合劑，根據常溫下之穩定性之觀點，較佳為萜烯醇類，更佳為異𦯉基環己醇。
燒結接合用片材10之23℃時之厚度較佳為5 μm以上，更佳為10 μm以上，且，較佳為300 μm以下，更佳為150 μm以下。又，燒結接合用片材10或形成其之燒結接合用組合物之70℃時之黏度例如為5×103 ～1×107 Pa・s，較佳為1×104 ～1×106 Pa・s。
燒結接合用片材10亦可沿著其分離預定線刻入切口。切口之深度(燒結接合用片材10中之自與基材B相反之側之表面起之深度)為燒結接合用片材10之厚度之例如20～100%。與燒結接合用片材10之切口相關之此種構成於適當地進行對於燒結接合用片材10之向下述燒結接合用材料層之小片化之方面較佳。
燒結接合用片材10例如可藉由將上述各成分混合於溶劑中製備清漆，於基材B之上塗佈該清漆形成塗膜，並使該塗膜乾燥而製作。作為清漆製備用之溶劑可使用有機溶劑或醇溶劑。
於本半導體裝置製造方法中，繼而，如圖3所示，將晶片C與燒結接合用片材10中密接於該晶片C之部分一同地自加工用膠帶T1拾取，獲得附有燒結接合用材料層之晶片C(拾取步驟)。於本實施形態之拾取步驟中，具體而言，對於拾取對象之晶片C，於加工用膠帶T1之圖中下側使拾取機構之銷構件21上升隔著加工用膠帶T1頂起。此時，於拾取對象之晶片C上，將燒結接合用片材10局部地小片化，形成燒結接合用材料層11。於此種頂起之後，藉由向燒結接合用材料層11側之吸附作用而將該晶片C利用吸附吸具22吸附保持。可如此地進行附有燒結接合用材料層之晶片C之拾取。
於本實施形態中，繼而，如圖4所示，自已拾取附有燒結接合用材料層之晶片C之吸附吸具22向另一吸附吸具23交接該晶片C(反轉步驟)。吸附吸具23係藉由向附有燒結接合用材料層之晶片C的晶片側之吸附作用而保持該晶片C。
繼而，如圖5(a)所示，將附有燒結接合用材料層之晶片C介隔該燒結接合用材料層11，對支持基板S壓接進行暫時固定(暫時固定步驟)。具體而言，例如使用貼片機，將附有燒結接合用材料層之晶片C介隔該燒結接合用材料層11，對支持基板S按壓進行暫時固定。作為支持基板S，例如，可列舉於表面伴有銅配線等配線之絕緣電路基板及引線框架。支持基板S中之晶片搭載部位可為銅配線或引線框架等之基體表面，亦可為形成於基體表面上之鍍膜之表面。作為該鍍膜，例如，可列舉鍍金膜、鍍銀膜、鍍鎳膜、鍍鈀膜、及鍍鉑膜。於本步驟中，暫時固定用之溫度條件例如處於自室溫至300℃為止之範圍，按壓之負載例如為0.01～50 MPa，接合時間例如為0.01～300秒鐘。
繼而，如圖5(b)所示，自介置於被暫時固定之晶片C與支持基板S之間之燒結接合用材料層11，經由加熱過程形成燒結層12，將晶片C對於支持基板S進行燒結接合(燒結接合步驟)。具體而言，藉由經由特定之高溫加熱過程，而於支持基板S與晶片C之間，使燒結接合用材料層11中之低沸點黏合劑揮發，使熱分解性高分子黏合劑熱分解後汽化，繼而，使燒結性粒子之導電性金屬燒結。藉此，於支持基板S與各晶片C之間形成燒結層12，將晶片C對於支持基板S一面獲取與支持基板S側之電性連接一面進行接合。於本步驟中，燒結接合之溫度條件例如處於150～400℃之範圍，較佳為處於250～350℃之範圍。燒結接合用之壓力例如為60 MPa以下，較佳為40 MPa以下。又，燒結接合之接合時間例如為0.3～300分鐘，較佳為0.5～240分鐘。例如，於該等條件之範圍內，適宜地設定用以實施燒結接合步驟之溫度分佈或壓力分佈。如以上之燒結接合步驟可使用能夠同時地進行加熱與加壓之裝置來進行。作為此種裝置，例如可列舉覆晶接合器及平行平板加壓機。又，根據與燒結接合相關之金屬之抗氧化之觀點，本步驟較佳為於氮氣氛圍下、減壓下、或還原氣體氛圍下進行。
燒結接合步驟中形成之燒結層12之厚度係於本實施形態中，處於燒結層12之平均厚度之較佳為60～140%之範圍內，更佳為80～120%之範圍內，更佳為90～110%之範圍內。燒結層12之厚度越均勻，則燒結層12中越容易獲得較高之接合可靠性。又，燒結層12之平均厚度較佳為5～200 μm，更佳為10～150 μm。此種構成於在燒結層12中緩和起因於熱應力之內部應力，確保充分之熱衝擊可靠性，並且抑制與燒結接合相關之成本甚至半導體裝置之製造成本之方面較佳。
於本半導體裝置製造方法中，繼而，如圖6(a)所示，將晶片C之端子部(省略圖示)與支持基板S所具有之端子部(省略圖示)根據需要經由接合線W電性地連接(打線接合步驟)。晶片C之端子部或支持基板S之端子部與接合線W之接線例如藉由伴有加熱之超聲波焊接而實現。作為接合線W，例如可使用金線、鋁線、或銅線。打線接合中之線加熱溫度例如為80～250℃，較佳為80～220℃。又，其加熱時間為數秒～數分鐘。
繼而，如圖6(b)所示，形成用以保護支持基板S上之晶片C或接合線W之密封樹脂M(密封步驟)。於本步驟中，例如，藉由使用模具進行之轉注成形技術而形成密封樹脂M。作為密封樹脂M之構成材料，例如可使用環氧系樹脂。於本步驟中，用以形成密封樹脂M之加熱溫度例如為165～185℃，加熱時間例如為60秒～數分鐘。於本密封步驟中密封樹脂M之硬化未充分進行之情形時，於本步驟之後進行用以使密封樹脂M完全硬化之後硬化步驟。
如以上所述，可製造具備半導體晶片之燒結接合部位之半導體裝置。
於本半導體裝置製造方法中，亦可於參照圖2所述之轉印步驟之後且拾取步驟之前，進行如以下之反轉步驟。於反轉步驟中，如圖7(a)所示，進行具有黏著面T2a之加工用膠帶T2對轉印步驟後之工件(複數個晶片C、燒結接合用片材10)之貼合、及加工用膠帶T1自該工件之剝離。加工用膠帶T2之黏著面T2a之黏著力與加工用膠帶T1之黏著面T1a之黏著力同等或為其以上。於本步驟中，例如，於轉印步驟後之工件中之燒結接合用片材10之側將加工用膠帶T2以該黏著面T2a側進行貼合之後，自該工件剝離加工用膠帶T1。
於進行此種反轉步驟之情形時，拾取步驟以如圖7(b)所示之態樣進行。具體而言，關於拾取對象之晶片C，於加工用膠帶T2之圖中下側使拾取機構之銷構件21上升介隔加工用膠帶T2頂起。此時，將燒結接合用片材10中密接於拾取對象之晶片C之部分小片化，形成燒結接合用材料層11。於此種頂起之後，藉由吸附吸具22而吸附保持該晶片C。如此獲得之附有燒結接合用材料層之晶片C用於參照圖5(a)所述之暫時固定步驟。
於以上之半導體裝置製造方法中，於參照圖1所述之排列步驟中，關於晶片C，可篩選出製作製程後經由各個檢查認定為良品者、即KGD(Known Good Die)，且排列於加工用膠帶T1上。因此，於本製造方法中，可將僅保持複數個KGD作為晶片C之加工用膠帶T1付諸轉印步驟，且於該轉印步驟中對該等晶片C(KGD)一次地轉印作為燒結接合用材料之燒結接合用片材10。此種本製造方法適於在燒結接合用材料對複數個晶片C之一次性供給時，避免燒結接合用材料對未認定為良品之晶片C之供給，因此，適於降低燒結接合用材料之損耗。
又，於本製造方法之轉印步驟中，如參照圖2所述，進行對於加工用膠帶T1上之複數個晶片C之片材體X之燒結接合用片材10(燒結接合用材料)側之貼合、及將燒結接合用片材10殘留於加工用膠帶T1上或複數個晶片C上之同時之基材B之剝離。此種構成適於一次地高效率進行燒結接合用材料對複數個晶片C之各者之供給。
另外，於本製造方法中，以於該轉印步驟之基材B剝離時，將燒結接合用片材10殘留於複數個晶片C上之方式，將排列步驟中排列於加工用膠帶T1上之晶片C之晶片間距離設定得較短。於將具有包含基材與燒結接合用片材之積層結構之片材體中之燒結接合用片材之側對加工用膠帶上之複數個晶片貼合之後，以晶片間距離過長之狀態，實施進行片材體基材之剝離之步驟之情形時，於片材體基材之剝離時，燒結接合用片材之一部分伴隨基材被去除。燒結接合用片材中之該去除部分成為燒結接合用材料之損耗。相對於此，於本製造方法中，以上述轉印步驟中不產生燒結接合用片材10之此種去除之程度，根據使用之燒結接合用片材10之黏度或厚度等，設定上述排列步驟中排列於加工用膠帶T1上之晶片C之晶片間距離。此種構成適於降低燒結接合用材料之損耗。
如以上所述，本半導體裝置製造方法適於一面降低燒結接合用材料之損耗一面高效率地進行燒結接合用材料對各晶片C之供給。
於本半導體裝置製造方法中，亦可於參照圖2所述之轉印步驟與上述拾取步驟之間，如圖8所示，進行將保持工件(複數個晶片C、燒結接合用片材10)之加工用膠帶T1暫時展延之步驟。於進行參照圖7(a)所述之反轉步驟之情形時，亦可於參照圖2所述之轉印步驟與該反轉步驟之間，如圖8所示，進行將保持工件之加工用膠帶T1暫時展延之步驟。
於本展延步驟中，使用展延裝置，首先，如圖8(a)所示，將於黏著面T1a伴有工件(複數個晶片C、燒結接合用片材10)與環狀框R之加工用膠帶T1固定於展延裝置之保持器31。繼而，如圖8(b)所示，使展延裝置所具備之中空圓柱形狀之頂起構件32對於加工用膠帶T1自其下側抵住上升，將保持工件之加工用膠帶T1以於包含該工件保持區域之徑向及圓周方向之二維方向上拉伸之方式拉伸。藉此，使密接於各晶片C上之燒結接合用片材10斷裂，小片化為每一晶片C之燒結接合用材料層11。展延時之溫度條件例如為-20～70℃。然後，如圖8(c)所示，使頂起構件32下降，解除加工用膠帶T1中之展延狀態。於展延之後，亦可將加工用膠帶T1中之較工件保持區域更靠外側之部分加熱而使之收縮。該加熱之溫度例如為100～300℃。此種構成於展延後抑制晶片C間之相隔距離變窄之方面較佳。
於本步驟中，如上所述，藉由將保持一次地貼合有燒結接合用片材10之複數個晶片C之加工用膠帶T1暫時展延，而將複數個晶片C上之燒結接合用片材10斷裂，小片化為每一晶片C之燒結接合用材料層11。此種構成於隨後進行之拾取步驟中適當地拾取伴有已與相鄰之燒結接合用材料層11分離之燒結接合用材料層11之晶片C之方面較佳。
於本半導體裝置製造方法中，亦可於參照圖2所述之轉印步驟與上述拾取步驟之間，如圖9所示，進行用以將燒結接合用片材10切斷之刀片切割步驟。於進行參照圖7(a)所述之反轉步驟之情形時，亦可於參照圖2所述之轉印步驟與該反轉步驟之間，如圖9所示，進行用以將燒結接合用片材10切斷之刀片切割步驟。
於本刀片切割步驟中，具體而言，使用具備旋轉刀片之切割裝置，將藉由加工用膠帶T1而保持之複數個晶片C上之燒結接合用片材10沿著其切斷預定部位利用旋轉刀片切斷，將燒結接合用片材10小片化為每一晶片C之燒結接合用材料層11。於圖9中，模式性地以粗線表示旋轉刀片之切斷部位。此種構成於隨後進行之拾取步驟中適當地拾取伴有已與相鄰之燒結接合用材料層11分離之燒結接合用材料層11之晶片C之方面較佳。
於本半導體裝置製造方法中，於進行參照圖7(a)所述之反轉步驟之情形時，亦可於該反轉步驟與參照圖7(b)所述之拾取步驟之間，如圖10所示，進行用以將燒結接合用片材10切斷之刀片切割步驟。
於本刀片切割步驟中，具體而言，使用具備旋轉刀片之切割裝置，將藉由加工用膠帶T2而與複數個晶片C一同地保持之燒結接合用片材10沿著其切斷預定部位利用旋轉刀片切斷，將燒結接合用片材10小片化為每一晶片C之燒結接合用材料層11。於圖10中，模式性地以粗線表示旋轉刀片之切斷部位。此種構成於隨後進行之拾取步驟中，適當地拾取伴有已與相鄰之燒結接合用材料層11分離之燒結接合用材料層11之晶片C之方面較佳。
於本半導體裝置製造方法中，亦可於參照圖2所述之轉印步驟與上述拾取步驟之間，如圖11所示，進行將保持工件(複數個晶片C、燒結接合用片材10)之加工用膠帶T1暫時彎曲之步驟。於進行參照圖7(a)所述之反轉步驟之情形時，亦可於參照圖2所述之轉印步驟與該反轉步驟之間，如圖11所示，進行將保持工件之加工用膠帶T1暫時彎曲之步驟。將加工用膠帶T1彎曲包含使加工用膠帶T1撓曲或彎曲。
於本彎曲步驟中，例如，如圖11(a)所示，藉由將保持一次地貼合有燒結接合用片材10之複數個晶片C之加工用膠帶T1彎曲，而將複數個晶片C上之燒結接合用片材10斷裂，小片化為每一晶片C之燒結接合用材料層11。此後，如圖11(b)所示，解除加工用膠帶T1之變形狀態。此種構成於隨後進行之拾取步驟中，適當地拾取伴有已與相鄰之燒結接合用材料層11分離之燒結接合用材料層11之晶片C之方面較佳。
10‧‧‧燒結接合用片材 11‧‧‧燒結接合用材料層 12‧‧‧燒結層 21‧‧‧銷構件 22‧‧‧吸附吸具 23‧‧‧吸附吸具 31‧‧‧保持器 32‧‧‧頂起構件 B‧‧‧基材 C‧‧‧晶片(半導體晶片) M‧‧‧密封樹脂 R‧‧‧環狀框 S‧‧‧支持基板(基板) T1‧‧‧加工用膠帶 T1a‧‧‧黏著面 T2‧‧‧加工用膠帶 T2a‧‧‧黏著面 W‧‧‧接合線 X‧‧‧片材體
圖1係表示本發明之一實施形態之半導體裝置製造方法中之一部分步驟。 圖2(a)～(c)係表示繼圖1所示之步驟之後之步驟。 圖3係表示繼圖2所示之步驟之後之步驟。 圖4係表示繼圖3所示之步驟之後之步驟。 圖5(a)、(b)係表示繼圖4所示之步驟之後之步驟。 圖6(a)、(b)係表示繼圖5所示之步驟之後之步驟。 圖7(a)、(b)係表示本發明之一實施形態之半導體裝置製造方法中之一部分步驟。 圖8(a)～(c)係表示本發明之一實施形態之半導體裝置製造方法中之一部分步驟。 圖9係表示本發明之一實施形態之半導體裝置製造方法中之一部分步驟。 圖10係表示本發明之一實施形態之半導體裝置製造方法中之一部分步驟。 圖11(a)、(b)係表示本發明之一實施形態之半導體裝置製造方法中之一部分步驟。
10‧‧‧燒結接合用片材
B‧‧‧基材
C‧‧‧晶片(半導體晶片)
R‧‧‧環狀框
T1‧‧‧加工用膠帶
T1a‧‧‧黏著面
X‧‧‧片材體

Claims (10)

  1. 一種半導體裝置製造方法，其包含如下步驟： 於具有黏著面之加工用膠帶之上述黏著面上排列複數個半導體晶片； 轉印步驟，其係將具有包含基材與燒結接合用片材之積層結構之片材體中之上述燒結接合用片材之側，對上述加工用膠帶上之上述複數個半導體晶片進行貼合之後，將該片材體之上述基材自上述燒結接合用片材剝離； 拾取步驟，其係將加工用膠帶上之上述半導體晶片與上述燒結接合用片材中密接於該半導體晶片之部分一同地拾取，獲得附有燒結接合用材料層之半導體晶片； 將附上述燒結接合用材料層之半導體晶片介隔該燒結接合用材料層暫時固定於基板；及 自介置於被暫時固定之上述半導體晶片與上述基板之間之燒結接合用材料層，經由加熱過程形成燒結層，而將該半導體晶片接合於上述基板。
  2. 如請求項1之半導體裝置製造方法，其中於上述轉印步驟與上述拾取步驟之間更包含展延步驟，於該展延步驟中，藉由將保持上述複數個半導體晶片之上述加工用膠帶暫時展延而使上述複數個半導體晶片上之上述燒結接合用片材斷裂，小片化為每一上述半導體晶片之燒結接合用材料層。
  3. 如請求項1之半導體裝置製造方法，其中於上述轉印步驟與上述拾取步驟之間更包含刀片切割步驟，於該刀片切割步驟中，藉由對上述燒結接合用片材之刀片切割而將該燒結接合用片材小片化為每一上述半導體晶片之燒結接合用材料層。
  4. 如請求項1之半導體裝置製造方法，其中於上述轉印步驟與上述拾取步驟之間更包含彎曲步驟，於該彎曲步驟中，藉由將保持上述複數個半導體晶片之上述加工用膠帶彎曲而使上述複數個半導體晶片上之上述燒結接合用片材斷裂，小片化為每一上述半導體晶片之燒結接合用材料層。
  5. 如請求項1至4中任一項之半導體裝置製造方法，其中上述燒結接合用片材包含含有導電性金屬之燒結性粒子及黏合劑成分。
  6. 如請求項1至4中任一項之半導體裝置製造方法，其中上述燒結層之厚度處於該燒結層之平均厚度之60～140%之範圍內。
  7. 如請求項1至4中任一項之半導體裝置製造方法，其中上述燒結層之平均厚度為5～200 μm。
  8. 如請求項1至4中任一項之半導體裝置製造方法，其中上述燒結性粒子包含選自由銀、銅、氧化銀、及氧化銅所組成之群之至少一種。
  9. 如請求項1至4中任一項之半導體裝置製造方法，其中上述半導體裝置係功率半導體裝置。
  10. 如請求項1至4中任一項之半導體裝置製造方法，其中上述複數個半導體晶片中相鄰之半導體晶片之間之距離為50～1000 μm。
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TWI798420B (zh) 2023-04-11
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JP2020004781A (ja) 2020-01-09
WO2020003663A1 (ja) 2020-01-02
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