TW202335556A - 使用層壓模組化預製件接合電組件及機械組件之方法 - Google Patents
使用層壓模組化預製件接合電組件及機械組件之方法 Download PDFInfo
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- TW202335556A TW202335556A TW112102637A TW112102637A TW202335556A TW 202335556 A TW202335556 A TW 202335556A TW 112102637 A TW112102637 A TW 112102637A TW 112102637 A TW112102637 A TW 112102637A TW 202335556 A TW202335556 A TW 202335556A
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Abstract
一種在一表面安裝技術(SMT)程序期間將一可燒結膜施加至一基材之方法，該方法包含：提供基材；提供包含一支撐膜的一預製件，該支撐膜具有一第一表面、及相對於該第一表面的一第二表面，該支撐膜與金屬粒子之一可燒結膜層壓在該第一表面上，但未層壓在該第二表面上；提供包含一置放頭的一取放機器；使用該取放機器之該置放頭經由該第二表面拾起該預製件，使用該取放機器置放該預製件與該基材接觸，其中該接觸係經由該可燒結膜；將該可燒結膜附接至該基材；及將該支撐膜與該可燒結膜分離。
Description
本發明大致上係關於一種將一可燒結膜施加至一基材之方法；一種在一基材上形成可燒結膜之一堆疊之方法；一種將一晶粒附接至一基材之方法；一種將一夾件、接合墊、或頂側橋接結構附接至一晶粒及一基材之方法；及一種製造電子裝置之方法。
燒結粉末含有奈米或微米大小之金屬粒子。其等可用以藉由將燒結粉末置放於電子組件之間並接著燒結該燒結粉末，而在電子組件之間形成燒結接合。使用燒結粉末可使接合能夠在比該粉末之熔融溫度及習知高溫焊料之熔融更低的溫度下形成。經燒結銀電子組件附接的材料將奈米矽粉末之獨特物理性質及先進的化學配方結合成新穎產物，其等允許接合各種電子裝置以生產具有極致功能可靠性之高導熱率及導電率介面。
透過印刷方法來施加呈膏之形式的燒結材料展現出困難性，特別是當在困難的部位（諸如複雜電路板上或升高裝置上）中施加係必要時。持續存在的問題（諸如印刷輪廓之非均質性、難以取用在凹陷位置中的模板、及模板/基材洩漏）為常見的。在一習知印刷方法中，一金屬模板（具有在50 µm至300 µm之範圍中的厚度，且具有呈網版或空白之形式的開口）係用以在目標表面之頂部上生產一空腔。印刷之程序涉及使用專用擦拭器在金屬模板上方塗上一定量的膏。該膏填充開口並得到其X-Y圖案及模板厚度之高度。在施加膏之後，於將目標組件（呈電力晶片、溫度感測器、導電/隔離間隔物等等之形式）置放於頂部上並透過施加壓力（10 MPa至25 MPa）、熱（210℃至270℃）、及時間（60 s至480 s）予以燒結之前，將模板移除並使膏在140℃至170℃之溫度範圍下的一專用烘箱中烘乾。對於將膏施加於平坦表面上且當空腔係在15 mm
2至400 mm
2範圍中時，印刷技術非常地適合。然而，當膏需要施加在較小或較大區域上時（由於印刷假影）、或當膏需要施加在三維上時（其中模板將實體地干擾已存在的組件），存在重大挑戰。在目標組件之表面頂部上印刷亦非常困難，需要使用三維模板，其遭受相當大量的膏浪費、模板下洩漏、及包括非均質印刷膏厚度的印刷假影。
施加呈膜或預製件之形式的燒結粉末而非膏係允許更好接合線控制、取用在其他情況下無法取用的部位（諸如空腔）、以及在建構模組上實現模組化方法之可能性。銀膜可施加或層壓至晶粒、晶圓、或任何其他相容電子組件之背側。
US10710336B2描述一燒結膜的使用，該燒結膜包含藉由粒子或藉由中間箔強化的奈米燒結材料，以生產可用於附接電子裝置的獨立預製件。在燒結之後，強化粒子或中間箔保持在燒結接合中，使得無法形成純的奈米銀燒結接合，從而潛在不利地影響燒結接合的性質。強化粒子及銀箔均因添加材料及處理步驟而增加了膜的成本。獨立膜在由習知取放機器搬運時通常會受損。
在US 2012/0114927A1亦描述燒結膜。本文亦描述將燒結膜轉移至晶粒或基材之方法。在該等方法之一者（所屬技術領域中已知為「晶粒轉移膜(Die Transfer Film)」或DTF）中，將呈膜之形式的可燒結材料置放於準備好供處理之一自動化取放型工作空間內的一橡膠固持器的頂部上。經製備膜及橡膠固持器總成係稱為膜站。在處理期間，藉由取放型接合頭從其固持站拾起目標組件（呈電力晶片、溫度感測器、導電/隔離間隔物等等之形式）並移到該經製備膜。之後，使用2 MPa至5 MPa之範圍內的壓力、及130℃至170℃之溫度、及100 ms至500 ms之時間將目標組件按壓至膜上。在此等按壓條件下，可燒結膜經層壓至目標組件之底側。在層壓程序之後，將目標組件從膜站提起並移到目標表面，其中使用3 MPa至5 MPa之範圍內的壓力、及130℃至170℃之溫度、及200 ms至800 ms之時間將其按壓至該目標表面上。在按壓程序之後，目標組件係用中度附接強度附接至目標表面，其足夠用於輸送未完成之電力模組至燒結步驟。接著藉由施加壓力（10 MPa至25 MPa）、熱（210℃至270℃）及時間（60 s至480 s）達成燒結，以達成一完全燒結接合。晶粒轉移膜技術非常地適合於層壓具有非常均勻的可燒結材料之目標組件的底部，但其受限於層壓係達成於離散可燒結組件之底部上的程序。將晶粒轉移膜概念施用於將目標組件之頂部層壓在目標表面之特定區域上、或施用於將基於膜的可燒結材料置於目標表面之該特定區域上係本質上不可能的。
本發明旨在解決與先前技術相關聯的至少一些問題或提供商業上可接受的替代方案。
在第一態樣中，本發明提供一種在一表面安裝技術(surface mount technology, SMT)程序期間將一可燒結膜施加至一基材之方法，該方法包含：
提供基材；
提供包含一支撐膜的一預製件，該支撐膜具有一第一表面、及相對於該第一表面的一第二表面，該支撐膜與金屬粒子之一可燒結膜層壓在該第一表面上，但未層壓在該第二表面上；
提供包含一置放頭的一取放機器；
使用該取放機器之該置放頭經由該第二表面拾起該預製件，
使用該取放機器置放該預製件與該基材接觸，其中該接觸係經由該可燒結膜；
將該可燒結膜附接至該基材；及
將該支撐膜與該可燒結膜分離。
現將進一步描述本發明。在下段中，更詳細地定義本發明之不同態樣。除非清楚指示相反情況，否則如此定義的各態樣可與任何其他（多個）態樣組合。具體地，指示為較佳或有利的任何特徵可與指示為較佳或有利的任何其他（多個）特徵組合。
令人驚訝的是，相對於印刷方法，本發明之方法使非常均勻及均質的可燒結材料能夠施加在大小範圍在例如1 mm
2至100 mm
2的目標表面上。本發明之方法亦可使可燒結材料能夠在完全乾燥的條件下施加，亦即不存在溶劑（意謂不需要單獨的乾燥步驟）。
有利地，相對於DTF方法，本發明之方法使可燒結材料能夠施加在難以達到的部位中，諸如基材的凹部中、或已附接至基材之晶粒或夾件之頂部上。亦可以不必適形於其所施加之表面的形狀及大小的所欲形狀及大小來施加可燒結材料。
在習知表面安裝技術(SMT)方法中，組件一般用可燒結膜層壓且接著置放於基材上。在本發明中，層壓程序係與組件處理程序分離。由於並非所有組件可層壓，本發明因此使可燒結膜能夠具體地置放於需要處。
本發明可使多個可燒結膜能夠在基材之相同部分上依序施加。此使吾人能夠控制最終可燒結膜之厚度。
該方法可達成可燒結膜之附接而無需使用膠黏劑。
相對於US10710336B2之可燒結膜，本發明之可燒結膜較佳地實質上不含（更佳地完全不含）支撐粒子（例如非金屬粒子，諸如石墨、碳、或玻璃），亦即除了金屬粒子以外的固體粒子。就支撐膜而言，且就膜不需為獨立的事實而言，此類支撐粒子在本發明之可燒結膜中係不必要的。此外，此類支撐粒子可不利地影響最終燒結接合之性質及/或增加可燒結膜之成本。相對於US10710336B2之可燒結膜，本發明之可燒結膜較佳地不含銀箔層。就支撐膜而言，此一銀箔層係不必要的。此外，就取放機器搬運可燒結膜之方式而言，其從不需要為獨立的。此一銀層可增加可燒結膜的成本。
如本文中使用，用語「表面安裝技術程序(surface mount technology (SMT) process)」可涵蓋電組件直接安裝至印刷電路板(PCB)之表面上的程序。
如本文中使用，用語「預製件(preform)」可涵蓋特別設計用於其欲使用之應用的一預製形狀之可燒結粒子。該預製件之該支撐膜具有第一表面及第二表面。該第一表面及該第二表面係該膜之主要（亦即最大）表面。該支撐膜係用金屬粒子之一可燒結膜層壓在該第一表面上。一般而言，金屬粒子之該可燒結膜覆蓋該第一表面的全部。
該可燒結膜之該等金屬粒子可呈例如球體、棒、及/或板之形式。
提供該預製件可包含雷射切割以確保該預製件具有所欲大小及形狀。例如，可提供一大型支撐膜，其具有在其一第一表面上但不在其一第二表面上的可燒結粒子之一膜。可接著使用連續波或短脈衝燒蝕雷射切割將該大型支撐膜切割成具有所欲大小及形狀的一或多個預製件。雷射切割使該等預製件能夠用高度的準確度及可忽略的邊緣損壞來製備。
用語「取放機器(pick-and-place machine)」將由所屬技術領域中具有通常知識者所理解，且可涵蓋用以將表面安裝裝置(surface-mount device, SMD)置放至印刷電路板(PCB)上的一機器人機器。合適的取放機器之商業實例包括Datacon EVO 2200、Infotech Die bonder、及ASM ForceVector。取放機器包含置放頭（亦稱為接合頭(bonding head)或拾起頭(pick-up head)）。該置放頭係用以拾起該預製件並將該預製件定位、將該可燒結膜附接至該基材、並將該支撐膜與該可燒結膜分離。該置放頭一般包含真空功能性。此一功能性可用以拾起該預製件。該置放頭亦可包含氣體吹掃功能性。該置放頭亦可包含一加熱功能性。可採用此一加熱功能性加熱該預製件，且可促進膜的膠黏及將該支撐膜與該可燒結膜分離。
該方法包含用該取放機器之該置放頭經由該第二表面拾起該預製件。換言之，在拾起期間，該置放頭僅接觸該預製件之該第二表面，且不接觸該預製件之該第一表面或該可燒結膜。因此，可在拾起及置放期間避免損壞該可燒結膜。此可避免當燒結膜在SMT程序期間燒結時形成受損接合，例如晶粒與基材之間展現出不利的熱、電、及/或機械性質的接合。
該方法包含將該可燒結膜附接至該基材。該附接一般係藉由施加熱及/或壓力來實行。附接一般由於金屬粒子微量注入基材而發生。
該方法包含將該支撐膜與該可燒結膜分離。接著可丟棄該支撐膜。替代地，該支撐膜可用以製造一額外預製件。分離可由於例如含在該可燒結膜中的有機化合物（例如黏合劑）蒸發而發生，其從該可燒結膜推離該支撐膜。
較佳地，該置放頭包含一真空管嘴，且經由該支撐膜拾起該預製件包含使用該真空管嘴將一真空施加至該第二表面。真空可特別適合於拾起該可燒結膜，且當施加至第二表面（亦即，未塗佈表面）時，可避免損壞該可燒結膜。藉由經由該第二表面拾起該預製件，來自該可燒結膜的金屬粒子並未被吸入至該取放型機器中且最終進入該真空泵中。
將該支撐膜與該可燒結膜分離較佳地係藉由維持該真空的同時將該取放機器之該置放頭從該支撐膜移開而實行。
較佳地，該方法進一步包含藉由移除該真空而從該取放機器丟棄該支撐膜。
在一較佳實施例中：該真空管嘴能夠供應一吹掃氣體，且該真空管嘴在移除該真空的同時供應吹掃氣體。
置放該預製件與該基材接觸較佳地包含置放該預製件與該基材之一空腔或凹部接觸。相對於習知方法，本發明之方法能夠將該預製件置放於此類難以達到的部位。據此，相對於習知方法，本發明之方法可用以製造更複雜的裝置及/或可用以更容易地製造此類裝置。
使用該取放機器之該置放頭經由該支撐膜拾起該預製件較佳地包含從一固持載體拾起該預製件，該固持載體更佳地係呈一晶粒盒(waffle pack)、一載帶、或一纏繞捲帶站(tape-and-reel station)的一固持載體。
在一較佳實施例中，該方法進一步包含：
提供包含一額外支撐膜的一額外預製件，該額外支撐膜具有一第一表面、及相對於該第一表面的一第二表面，該額外支撐膜與金屬粒子之一額外可燒結膜層壓在該第一表面上，但未層壓在該第二表面上；
使用該取放機器之該置放頭經由該額外支撐膜之該第二表面拾起該預製件，
使用該取放機器置放該預製件與該可燒結膜接觸，其中該接觸係經由該額外可燒結膜；
將該額外可燒結膜附接至該可燒結膜；及
將該額外支撐膜與該額外可燒結膜分離。
此可增加使用該可燒結膜及該額外可燒結膜形成之一燒結接合的厚度。
該支撐膜較佳地包含聚合物，或該支撐膜包含一聚合支撐膜。聚合物可特別適合於支撐該可燒結膜，且可特別適合於由該取放機器搬運。
該基材較佳地係選自一直接覆銅(Direct Bonded Copper, DBC)基材；一活性金屬硬焊(Active Metal Brazed, AMB)基材；呈一閘極墊、一源極墊、一汲極墊、一集極墊之形式的一半導體表面；一矽晶圓基材；一散熱器；一金屬連接器；及一壓電基材。此類基材可含有難以達到的部位，諸如凹部。如上文所論述，本發明之方法可係能夠將可燒結膜施加至此類部位。
該預製件較佳地具有自0.5 mm至40 mm的一最長尺寸。當該預製件係呈一圓盤之形狀時，該最長尺寸係該圓盤之直徑。
該預製件較佳地係一正方形、一矩形、一圓形之形狀、及適形於該目標基材之大致尺寸的任何多邊形形狀。
該支撐膜較佳地具有40 µm至80 µm的一厚度。較小的厚度可能導致該支撐膜在由該取放機器搬運時破裂。較大的厚度可增加該支撐膜的成本。
該可燒結膜較佳地具有30 µm至120 µm的一厚度。若該厚度小於30 µm，則由該可燒結膜形成之燒結接合可能展現不利的機械及/或熱性質。大於120 µm的厚度可能不利地增加最終裝置的大小且可增加該可燒結膜的成本。
該等金屬粒子較佳地係選自銀、銀合金、金、金合金、銅、銅合金、鈀、鈀合金、鎳、鎳合金、鋁及鋁合金、塗佈銀的銅、塗佈銅的銀之一或多者，更佳地係銀。就其等有利的熱、電、及機械性質而言，此類金屬特別適合用作可燒結粒子。
該等金屬粒子較佳地具有自1 nm至1000 nm、較佳地自2 nm至500 nm、更佳地自5 nm至100 nm、甚至更佳地自10 nm至60 nm的一最長尺寸。當該等粒子呈球體之形式時，該最長尺寸係該球體之直徑。該最長尺寸可使用雷射繞射方法判定。較小的粒子可能更難以處置。較大的粒子可能需要更高的燒結溫度及/或壓力及/或時間。
該可燒結膜較佳地包含自30 wt.%至95 wt.%的金屬粒子。較低的量可能意謂由該可燒結膜形成之燒結接合展現不利的機械、熱、及/或電性質。較高的量可能導致金屬粒子的氧化及/或聚結。
該等金屬粒子較佳地係用一封端劑封端，該封端劑更佳地係選自脂肪酸、脂肪胺、及澱粉之一或多者。封端劑的存在可阻礙金屬粒子的氧化及/或聚結。
該可燒結膜較佳地包含自0.1至20 wt.%的封端劑，更佳地包含自0.5至0.8 wt.%的封端劑或自0.8至1.5 wt.%的封端劑。較低量的封端劑可能不足以阻礙金屬粒子的氧化及/或聚結。較高的量可能增加有機物存在於由該可燒結膜形成之可燒結接合中的量，從而不利地影響接合的機械、熱、或電性質。
較佳地，該等金屬粒子包含銀粒子，且該可燒結膜實質上不含（更佳地完全不含）銅、鋁、玻璃、碳、及石墨之粒子。
該可燒結膜較佳地不含一銀箔層。
該可燒結膜較佳地包含一黏合劑，該黏合劑較佳地係具有自50℃至170℃、又更佳地自70℃至120℃之一軟化點的一黏合劑。較高的軟化點可能增加殘留在燒結接合中的黏合劑的量，從而潛在不利地影響該燒結接合的機械、熱、及/或電性質。此外，較高的軟化點可能使金屬粉末的粒子更難以燒結。較低的軟化點可能導致該燒結膜在拾起或置放期間失去其結構完整性。
該黏合劑較佳地包含樹脂及/或松香，較佳地氫化松香。此等物種的存在可從該基材及/或金屬粒子移除表面氧化物。
該可燒結膜較佳地包含自0.5 wt.%至5 wt.%的黏合劑。較低的量可能不足以充當黏合劑。較高的量可能增加有機材料存在於該燒結接合中的量。
該可燒結膜較佳地包含一溶劑，該溶劑較佳地係選自松香醇(terpineol)、丁基卡必醇(butyl carbitol)、及異丙醇之一或多者。該溶劑可溶解該黏合劑。此類溶劑在典型燒結溫度期間可實質上蒸發，從而減少有機材料存在於最終燒結接合中的量。
該可燒結膜較佳地含有足夠的溶劑以溶解該黏合劑。該可燒結膜較佳地包含至多70 wt.%的溶劑，更佳地自1 wt.%至60 wt.%的溶劑，甚至更佳地自10 wt.%至30 wt.%的溶劑。較低量的溶劑可能無法充分溶解該黏合劑。較高的量可能增加有機材料存在於該最終燒結接合中的量。
該附接係在自130℃至170℃之一溫度下及/或在自2 MPa至5 Mpa之一壓力下及/或達自100ms至2000ms、較佳地自100 ms至800 ms之一時間實行。此類條件可特別有效地將該可燒結膜附接至該基材。例如，該等條件可助長該等金屬粒子注入至該基材中及/或可導致溶劑的蒸發。較高的溫度及/或壓力及/或更長的時間可能導致該等金屬粒子的燒結。較低的溫度及/或壓力及/或更短的時間可能導致不足的附接。
在一進一步態樣中，本發明提供一種在一表面安裝技術(SMT)程序期間將一可燒結膜施加至一基材之方法，該方法包含：
提供基材；
提供包含一支撐膜的一預製件，該支撐膜具有一第一表面、及相對於該第一表面的一第二表面，該支撐膜與金屬粒子之一可燒結膜層壓在該第一表面上，但未層壓在該第二表面上；
置放該預製件與該基材接觸，其中該接觸係經由該可燒結膜；
將該可燒結膜附接至該基材，及
將該支撐膜與該可燒結膜分離，
其中：
該置放係使用一取放機器實行，且
在該置放及該附接期間，該取放機器接觸該支撐膜之該第二表面，但不接觸該可燒結膜。
第一態樣的優點及較佳特徵同樣適用於此態樣。
在一進一步態樣中，本發明提供一種在一表面安裝技術(SMT)程序期間在一基材上形成可燒結膜之一堆疊之方法，該方法包含：
使用本文所述之方法將一第一可燒結膜施加至一基材；及
在該第一可燒結膜上依序堆疊一或多個額外可燒結膜，該一或多個額外可燒結膜之各者係使用一方法予以堆疊，該方法包含：
提供包含一額外支撐膜的一額外預製件，該額外支撐膜具有一第一表面、及相對於該第一表面的一第二表面，該額外支撐膜與金屬粒子之一額外可燒結膜層壓在該第一表面上，但未層壓在該第二表面上；
使用該取放機器之該置放頭經由該第二表面拾起該額外預製件；
針對該一或多個可燒結膜之該第一者：
使用該取放機器置放各別的該額外預製件與該第一可燒結膜接觸，其中該接觸係經由該額外可燒結膜，
將該額外可燒結膜附接至該第一可燒結膜，及
將該支撐膜與該額外可燒結膜分離；及
針對後續的該等額外可燒結膜：
使用該取放機器置放各別的該額外預製件與緊接在前的該額外可燒結膜接觸，其中該接觸係經由該第二額外可燒結膜或後續的該額外可燒結膜之各別的該預製件之該額外可燒結膜，
將該額外可燒結膜附接至緊接在前的該額外可燒結膜；及
將該支撐膜與該額外可燒結膜分離。
第一態樣的優點及較佳特徵同樣適用於此態樣。
該等堆疊可燒結膜之厚度可藉由控制可燒結膜所堆疊之數目來控制。控制該堆疊的厚度可使吾人能夠控制由該堆疊形成之燒結接合的厚度。較厚的燒結接合可係有益的，例如當由該接合所接合之基材及晶粒展現出不同的熱膨脹係數(CTE)。
在一較佳實施例中，該第一可燒結膜係由與該一或多個額外可燒結膜相同的材料形成。在此情況下，該燒結接合的機械、熱、及/或電性質橫跨其厚度可係實質上恆定。
在一替代較佳實施例中，該第一可燒結膜係由具有與該一或多個額外可燒結膜中之至少一者的彼等性質不同的機械及/或熱及/或電性質之材料形成。在此情況下，該燒結接合的機械、熱、及/或電性質橫跨其厚度可變化。例如，當該接合用以接合具有不同熱膨脹係數(CTE)的基材及晶粒時，可控制可燒結膜中之金屬粒子之金屬的CTE，使得經燒結接合的CTE橫跨其厚度而變化，亦即在該接合接近基材者之基材側部分上具有一CTE，且在該接合接近晶粒者之晶粒側上具有一CTE。合適金屬之實例包括鐵鎳合金、銅鎢合金、及銅鉬合金。在另一實例中，可係所欲的是在該接合中引入一犧牲失效區(sacrificial failure area)，以便提供可預測失效且有助於模組壽命時間預測。可藉由確認該等可燒結膜中之至少一者含有其中金屬具有比其他可燒結膜中之金屬粒子的金屬更低的拉伸強度及/或降伏強度的金屬粒子，來引入此一犧牲區。
在一較佳實施例中，將兩個額外可燒結膜堆疊在該第一可燒結膜上，以形成具有一內可燒結膜及兩個外可燒結膜的一堆疊，且其中該內可燒結膜係由具有與形成該兩個外可燒結膜之該材料的彼等性質不同的機械性質及/或熱性質之材料（亦即，金屬粒子）形成。較佳地，該內可燒結膜之該等金屬粒子的該金屬具有比該外可燒結膜之該等金屬粒子的該金屬更低的一拉伸強度及/或降伏強度。在燒結該堆疊上，該內可燒結膜可導致一犧牲失效區。
較佳地，該方法進一步包含在該第一可燒結膜與一額外可燒結膜之間及/或額外可燒結膜之間施加添加劑粒子。
該等添加劑粒子較佳地包含具有比該第一可燒結膜及一或多個額外可燒結膜之該材料更高的一導熱率之粒子。此可增加該燒結接合的該導熱率。當需要從晶粒將熱移除至基材時，此可係有益的。
具有比該第一可燒結膜及一或多個額外可燒結膜之該材料更高的一導熱率之該等粒子較佳地包含鑽石。該等粒子（諸如鑽石）可分散於可燒結粒子之膜中。
該等添加劑粒子包含具有與該第一可燒結膜及一或多個額外可燒結膜之該材料不同的一楊氏模數之粒子。此可減少該燒結接合上的總體應力，從而改良該接合的可靠性。
在一進一步態樣中，本發明提供一種將一晶粒附接至一基材之方法，該方法包含：
使用本文所述之方法將一可燒結膜施加至一基材，或使用本文所述之方法在一基材上形成可燒結膜之一堆疊；
使一晶粒與該可燒結膜或可燒結膜之堆疊接觸；及
燒結該可燒結膜或可燒結膜之堆疊以將該晶粒附接至該基材。
此態樣的優點及較佳特徵同樣適用於此態樣。
在一較佳實施例中，該可燒結膜之寬度係小於該晶粒之寬度及該基材之寬度。此可導致一底切。當例如晶粒包含邊緣鈍化時，此可係有益的
較佳地，該晶粒包含邊緣鈍化，且該晶粒與該可燒結膜接觸使得該可燒結膜不接觸該邊緣鈍化。
在另一態樣中，本發明提供一種將一夾件、接合墊、或頂側橋接結構附接至一晶粒之方法，該方法包含：
提供附接至一基材的一晶粒；
將一可燒結膜施加至該晶粒，
使該可燒結膜與一夾件、接合墊、或頂側橋接結構接觸；及
燒結該可燒結膜，以將該夾件、接合墊、或頂側橋接結構附接至該晶粒，
其中：
將該可燒結膜施加至該晶粒係藉由一方法實行，該方法包含：
提供包含一支撐膜的一預製件，該支撐膜具有一第一表面、及相對於該第一表面的一第二表面，該支撐膜與金屬粒子之一可燒結膜層壓在該第一表面上，但未層壓在該第二表面上，
提供包含一置放頭的一取放機器，
使用該取放機器之該置放頭經由該第二表面拾起該預製件，
使用該取放機器置放該預製件與該晶粒接觸，其中該接觸係經由該第二表面，
將該可燒結膜附接至該晶粒，及
將該支撐膜與該可燒結膜分離。
第一態樣的優點及較佳特徵同樣適用於此態樣。
如上文所論述，相對於習知方法，本發明之方法能夠將一可燒結膜施加至附接至一基材的一晶粒。此可促進將一夾件、接合墊、或頂側橋接結構附接至該晶粒。
在此態樣中，該可燒結膜較佳地包含可燒結膜之一堆疊。
在另一態樣中，本發明提供一種將一夾件、接合墊、或頂側橋接結構附接至一晶粒之方法，該方法包含：
使用本文所述之方法將一晶粒附接至一基材；
將一可燒結膜施加至該晶粒，
使該可燒結膜與一夾件、接合墊、或頂側橋接結構接觸；及
燒結該可燒結膜，以將該夾件、接合墊、或頂側橋接結構附接至該晶粒，
其中：
將該可燒結膜施加至該晶粒係藉由一方法實行，該方法包含：
提供包含一支撐膜的一預製件，該支撐膜具有一第一表面、及相對於該第一表面的一第二表面，該支撐膜與金屬粒子之一可燒結膜層壓在該第一表面上，但未層壓在該第二表面上，
提供包含一置放頭的一取放機器，
使用該取放機器之該置放頭經由該第二表面拾起該預製件，
使用該取放機器置放該預製件與該晶粒接觸，其中該接觸係經由該可燒結膜，
將該可燒結膜附接至該晶粒，及
將該支撐膜與該可燒結膜分離。
第一態樣的優點及較佳特徵同樣適用於此態樣。
如上文所論述，相對於習知方法，本發明之方法能夠將一可燒結膜施加至附接至一基材的一晶粒。此可促進將一夾件、接合墊、或頂側橋接結構附接至該晶粒。
在此態樣中，該可燒結膜較佳地包含可燒結膜之一堆疊。
在一進一步態樣中，本發明提供一種製造一電子裝置之方法，該方法包含：
使用本文所述之方法將一晶粒附接至一基材；
使用本文所述之方法將一夾件、接合墊、或頂側橋接結構附接至該晶粒。
第一態樣的優點及較佳特徵同樣適用於此態樣。
該電子裝置較佳地係一電力模組。
現將參照下列編號的條項進一步描述本發明：
1. 一種將一可燒結膜附接至一基材之方法，該方法包含：
提供基材；
提供包含一支撐膜的一預製件，該支撐膜具有一第一表面、及相對於該第一表面的一第二表面，該支撐膜與金屬粒子之一可燒結膜層壓在該第一表面上，但未層壓在該第二表面上；
置放該預製件與該基材接觸，其中該接觸係經由該可燒結膜；
將該可燒結膜附接至該基材，及
將該支撐膜與該可燒結膜分離。
2. 如條項1之方法，其中該支撐膜包含聚合物，或該支撐膜包含一聚合支撐膜。
3. 如條項1或2之方法，其中該基材係選自一直接覆銅(DBC)基材；一活性金屬硬焊(AMB)基材；呈一閘極墊、或一源極墊、或一汲極墊、或一集極墊之形式的一半導體表面；一矽晶圓基材；一矽晶圓基材；一散熱器；一金屬連接器；及一壓電基材。
4. 如前述條項中任一項之方法，其中該預製件具有範圍自0.5 mm橫跨至多40 mm的大致尺寸，其橫跨呈正方形、矩形、圓形之形狀、及適形於經附接之該基材之大致尺寸的形狀。
5. 如前述條項中任一項之方法，其中該支撐膜具有自40 µm至80 µm的一厚度。
6.如前述條項中任一項之方法，其中該可燒結膜具有自30 µm至120 µm的一厚度。
7. 如前述條項中任一項之方法，其中該可燒結膜包含金屬粒子，該等金屬粒子較佳地係選自銀、銀合金、金、金合金、銅、銅合金、鈀、鈀合金、鎳、鎳合金、鋁、及鋁合金之一或多者。
8. 如前述條項中任一項之方法，其中該等金屬粒子具有自1 nm至1000 nm、較佳地自2 nm至500 nm、更佳地自5 nm至100 nm、甚至更佳地自10 nm至60 nm的一最長尺寸。
9. 如前述條項中任一項之方法，其中該可燒結膜包含自30 wt.%至95 wt.%的金屬粒子。
10. 如前述條項中任一項之方法，其中該等金屬粒子係用一封端劑封端，該封端劑較佳地係選自脂肪酸、脂肪胺、及澱粉之一或多者。
11. 如條項10之方法，其中該可燒結膜包含自0.1 wt.%至20 wt.%的封端劑，較佳地包含自0.5 wt.%至0.8 wt.%的封端劑或自0.8 wt.%至1.5 wt.%的封端劑。
14. 如前述條項中任一項之方法，其中該可燒結膜包含一黏合劑，該黏合劑較佳地具有自50℃至170℃、較佳地自70℃至120℃的一軟化點。
15. 如條項14之方法，其中該黏合劑包含樹脂及/或松香，較佳地氫化松香。
16. 如條項14或15之方法，其中該可燒結膜包含自0.5 wt.%至5 wt.%的黏合劑。
17. 如前述條項中任一項之方法，其中該可燒結膜包含一溶劑，該溶劑較佳地係選自松香醇、丁基卡必醇、及異丙醇之一或多者。
18. 如條項17之方法，其中該可燒結膜包含至多70 wt.%的溶劑，較佳地自1 wt.%至60 wt%的溶劑，更佳地自10 wt.%至30 wt.%的溶劑。
19. 如前述條項中任一項之方法，其中該附接係在自130℃至170℃之一溫度下及/或在自2 MPa至5 Mpa之一壓力下及/或達自100ms至2000ms、較佳地自100 ms至800 ms之一時間實行。
20. 如前述條項中任一項之方法，其中：
該置放係使用一取放機器實行；及
在該置放及該附接期間，該取放機器接觸該支撐膜之該第二表面，但不接觸該可燒結膜。
21. 如前述條項中任一項之方法，其中：
該置放係使用一自動化取放機器實行；及
在該拾起、置放、及該附接程序期間，該取放機器接觸該支撐膜之該第二表面，但不接觸該可燒結膜。
22. 如條項20或21之方法，其中該取放機器包含一接合頭工具，該接合頭工具具有真空及空氣吹掃功能性。
23. 如條項20至22中任一項之方法，其中在該置放、該附接、及/或該分離期間，該取放機器，較佳地該取放機器之該接合頭工具係使用一真空維持與該第二表面接觸。
24. 如條項23之方法，其中將該支撐膜與該可燒結膜分離係藉由維持該真空的同時將該取放機器之該置放頭從該燒結膜移開而實行。
25. 如條項24之方法，其中藉由移除該真空/使該真空反向而從該取放機器丟棄該支撐膜。
26. 如前述條項中任一項之方法，其係在一表面安裝技術(SMT)程序期間實行。
27. 如前述條項中任一項之方法，其中置放該預製件與該基材接觸包含置放該預製件與該基材之一空腔/凹部接觸。
28. 如前述條項中任一項之方法，其進一步包含：
提供包含一支撐膜的一額外預製件，該支撐膜具有一第一表面、及相對於該第一表面的一第二表面，該支撐膜與金屬粒子之一額外可燒結膜層壓在該第一表面上，但未層壓在該第二表面上；
置放該額外預製件與該可燒結膜接觸，其中該接觸係經由該額外可燒結膜；
將該額外可燒結膜附接至該可燒結膜，及
將該支撐膜與該額外可燒結膜分離。
29. 如前述條項之方法，其進一步包含使該可燒結銀膜或額外可燒結銀膜與一組件接觸，該組件較佳地係選自一晶粒、一晶圓、一接合墊、一二次陶瓷基材、一銅線、及一銅絲。
30. 如條項29之方法，其進一步包含燒結該可燒結膜、及可選的該額外可燒結膜，以將該組件附接至該基材。
參考圖1，顯示使用習知印刷方法將膏施加至晶粒。如可見，存在著膏洩漏及模板分離的問題。
參考圖2，顯示一預製件（大致顯示在A處）的示意圖，該預製件包含具有一第一表面C及一第二表面D的一支撐膜B。該第一表面係用金屬粒子E之可燒結膜層壓。
參考圖3，顯示根據本發明之方法的示意圖。在步驟1中，取放接合頭使用真空藉由支撐膜B來拾起圖2所示之預製件A。在步驟2中，預製件A在150℃的溫度下與一基材/晶粒接觸，以附接可燒結膜E。在步驟3中，在保持真空的同時，將接合頭從基材/晶粒移開以將該支撐膜與該可燒結膜分離。最後，如圖3之右側所示，藉由關閉真空來丟棄該支撐膜。
參考圖4，顯示使用圖3所示之方法將可燒結膜施加至晶粒之頂側的影像。左手邊影像顯示聚合物支撐膜被移除並放置在一個側上的宏觀影像。右手邊雷射掃描影像顯示良好的均質性及平面性。
參考圖5，顯示在一表面安裝技術(SMT)程序期間於基材上形成可燒結膜之堆疊的方法。使用一取放機器將一預製件施加至一基材。接著將該支撐膜從該可燒結膜移除。接著將一第二可燒結膜施加至該第一可燒結膜，隨後將一第三可燒結膜施加至該第二可燒結膜。接著將一晶粒施加至該可燒結膜之堆疊。該第二可燒結膜具有與第一及第三可燒結膜不同的材料性質。接著燒結該等可燒結膜以在該晶粒與該基材之間形成一燒結接合。在圖5中，步驟之順序為：置放層壓預製件、置放離形屏蔽聚合物片材、請第二層、置放第三層、置放晶粒、燒結多層預製件。
參考圖6，顯示在圖5所示之方法期間形成的五個可燒結膜之堆疊的SEM影像。
參考圖7，顯示根據本發明之方法的示意圖。可燒結膜之寬度可與晶粒之與（頂部）相同、或小於該晶粒之與（底部）。當可燒結膜之寬度小於晶粒之寬度時，形成底切(undercut)。在圖6中，第一步驟係置放層壓預製件程序。在該頂部方案中，第一步驟係置放具有與預製件確切大小的晶粒，且第二步驟係在無過印刷/過層壓的情況下燒結。在該底部方案中，第一步驟係置放過大的晶粒，且第二步驟係在具有底切的情況下燒結。圖8顯示使用本發明之方法在銅基材之頂部上燒結的晶粒的SEM影像，以達成大約65 µm之底切。
參考圖9，顯示根據本發明之將夾件(clip)附接至晶粒的方法的示意圖。將一可燒結膜附接至一基材，且接著將一晶粒置放於該可燒結膜上。步驟之順序係：置放經層壓預製件、置放晶粒並進行燒結，將經層壓預製件置放於基材及經燒結晶粒上，將夾件置放於經層壓預製件上、燒結夾件。夾件的附接可實現高電流及低電感電路。
參考圖10，顯示根據本發明之將接合墊附接至晶粒的方法的示意圖。步驟之順序係：置放經層壓預製件、置放晶粒、將經層壓預製件置放於晶粒上，將接合墊置放於經層壓預製件之頂部上、同時燒結兩個預製件、在墊之頂部上預製接合。接合墊係由晶粒之敏感頂側金屬與生硬互連方法（諸如銅線或銅絲接合）之間的一緩衝層組成，其需要強大的力及超音波能量
參考圖11，顯示根據本發明之將頂側橋接結構附接至晶粒的方法的示意圖。步驟之順序係：置放經層壓預製件、置放晶粒及間隔物、燒結間隔物及晶粒、置放經層壓預製件、置放頂側基材、將基材燒結至附接之頂側。該方法可導致一雙側冷卻模組，其中晶粒之汲極及源極連接經燒結至平坦基材，以改良冷卻潛能且增加電力模組的體積密度。
參考圖12，顯示根據本發明之方法的示意圖，其中將可燒結膜施加至基材之空腔。步驟之順序係：將經層壓預製件置放於空腔中、將晶粒置放於空腔中的預製件上並執行燒結、將經層壓預製件置放於晶粒上及接觸件上、將橋接接觸器置放於預製件之頂部上並燒結。
以上實施方式已藉由說明及繪示的方式提供且不旨在限制隨附申請專利範圍之範圍。本文所繪示之目前較佳實施例中的許多變化對所屬技術領域中具有通常知識者而言將係顯而易見的，且仍在隨附申請專利範圍及其均等者之範疇內。
A:預製件
B:支撐膜
C:第一表面
D:第二表面
E:金屬粒子
現將參照下列圖式進一步描述本發明，其中：
［圖1］顯示根據習知方法之在晶粒之頂部上的經印刷膏的影像。
［圖2］顯示根據本發明之預製件的示意圖。
［圖3］顯示根據本發明之方法的示意圖。
［圖4］顯示使用圖3所示之方法施加至基材的可燒結膜的影像。
［圖5］顯示根據本發明之方法的示意圖。
［圖6］顯示使用圖5所示之方法施加至基材的可燒結膜的影像。
［圖7］顯示根據本發明之方法的示意圖。
［圖8］顯示使用圖7所示之方法在銅基材之頂部上燒結的晶粒的SEM影像。
［圖9］顯示根據本發明之方法的示意圖。
［圖10］顯示根據本發明之方法的示意圖。
［圖11］顯示根據本發明之方法的示意圖。
［圖12］顯示根據本發明之方法的示意圖。
Claims (46)
- 一種在一表面安裝技術(SMT)程序期間將一可燒結膜施加至一基材之方法，該方法包含： 提供基材； 提供包含一支撐膜的一預製件，該支撐膜具有一第一表面、及相對於該第一表面的一第二表面，該支撐膜與金屬粒子之一可燒結膜層壓在該第一表面上，但未層壓在該第二表面上； 提供包含一置放頭的一取放機器； 使用該取放機器之該置放頭經由該第二表面拾起該預製件， 使用該取放機器置放該預製件與該基材接觸，其中該接觸係經由該可燒結膜； 將該可燒結膜附接至該基材；及 將該支撐膜與該可燒結膜分離。
- 如請求項1之方法，其中： 該置放頭包含一真空管嘴，且 經由該支撐膜拾起該預製件包含使用該真空管嘴將一真空施加至該第二表面。
- 如請求項2之方法，其中將該支撐膜與該可燒結膜分離係藉由維持該真空的同時將該取放機器之該置放頭從該支撐膜移開而實行。
- 如請求項3之方法，其進一步包含藉由移除該真空而從該取放機器丟棄該支撐膜。
- 如請求項4之方法，其中： 該真空管嘴能夠供應一吹掃氣體，且 該真空管嘴在移除該真空的同時供應吹掃氣體。
- 如前述請求項中任一項之方法，其中置放該預製件與該基材接觸包含置放該預製件與該基材之一空腔或凹部接觸。
- 如前述請求項中任一項之方法，其中使用該取放機器之該置放頭經由該支撐膜拾起該預製件包含從一固持載體拾起該預製件，該固持載體較佳地係呈一晶粒盒、一載帶、或一纏繞捲帶站的一固持載體。
- 如前述請求項中任一項之方法，其進一步包含： 提供包含一額外支撐膜的一額外預製件，該額外支撐膜具有一第一表面、及相對於該第一表面的一第二表面，該額外支撐膜與金屬粒子之一額外可燒結膜層壓在該第一表面上，但未層壓在該第二表面上； 使用該取放機器之該置放頭經由該額外支撐膜之該第二表面拾起該預製件， 使用該取放機器置放該預製件與該可燒結膜接觸，其中該接觸係經由該額外可燒結膜； 將該額外可燒結膜附接至該可燒結膜；及 將該額外支撐膜與該額外可燒結膜分離。
- 如前述請求項中任一項之方法，其中該支撐膜包含聚合物，或該支撐膜包含一聚合支撐膜。
- 如前述請求項中任一項之方法，其中該基材係選自一直接覆銅(DBC)基材；一活性金屬硬焊(AMB)基材；呈一閘極墊、一源極墊、一汲極墊、一集極墊之形式的一半導體表面；一矽晶圓基材；一散熱器；一金屬連接器；及一壓電基材。
- 如前述請求項中任一項之方法，其中該預製件具有自0.5 mm至40 mm的一最長尺寸。
- 如前述請求項中任一項之方法，其中該預製件係呈一正方形、一矩形、一圓形之形狀、及適形於該基材之大致尺寸的任何多邊形形狀。
- 如前述請求項中任一項之方法，其中該支撐膜具有自40 µm至80 µm的一厚度。
- 如前述請求項中任一項之方法，其中該可燒結膜具有自30 µm至120 µm的一厚度。
- 如前述請求項中任一項之方法，其中該等金屬粒子係選自銀、銀合金、金、金合金、銅、銅合金、鈀、鈀合金、鎳、鎳合金、鋁及鋁合金、塗佈銀的銅、塗佈銅的銀之一或多者，更佳地係銀。
- 如請求項15之方法，其中該等金屬粒子具有自1 nm至1000 nm、較佳地自2 nm至500 nm、更佳地自5 nm至100 nm、甚至更佳地自10 nm至60 nm的一最長尺寸。
- 如請求項15或16之方法，其中該可燒結膜包含自30 wt.%至95 wt.%的金屬粒子。
- 如請求項15至17中任一項之方法，其中該等金屬粒子係用一封端劑封端，該封端劑較佳地係選自脂肪酸、脂肪胺、及澱粉之一或多者。
- 如請求項18之方法，其中該可燒結膜包含自0.1 wt.%至20 wt.%的封端劑，較佳地包含自0.5 wt.%至0.8 wt.%的封端劑或自0.8 wt.%至1.5 wt.%的封端劑。
- 如前述請求項中任一項之方法，其中該可燒結膜包含非金屬粒子，該等非金屬粒子較佳地係呈大於0 wt.%至30 wt.%的量、更佳地係呈自1 wt.%至30 wt.%的量。
- 如請求項20之方法，其中該等非金屬粒子係選自呈塗佈或非塗佈之形式的碳、碳化矽、氮化鋁、氮化硼、及二氧化矽之一或多者。
- 如前述請求項中任一項之方法，其中該等金屬粒子包含銀粒子，且該可燒結膜實質上不含銅、鋁、玻璃、碳、及石墨之粒子。
- 如前述請求項中任一項之方法，其中該可燒結膜不含一銀箔層。
- 如前述請求項中任一項之方法，其中該可燒結膜包含一黏合劑，該黏合劑較佳地具有自50℃至170℃、更佳地自70℃至120℃的一軟化點。
- 如請求項24之方法，其中該黏合劑包含樹脂及/或松香，較佳地氫化松香。
- 如請求項24或25之方法，其中該可燒結膜包含自0.5 wt.%至5 wt.%的黏合劑。
- 如前述請求項中任一項之方法，其中該可燒結膜包含一溶劑，該溶劑較佳地係選自松香醇、丁基卡必醇、及異丙醇之一或多者。
- 如請求項27之方法，其中該可燒結膜包含至多70 wt.%的溶劑，較佳地自1 wt.%至60 wt.%的溶劑，更佳地自10 wt.%至30 wt.%的溶劑。
- 如前述請求項中任一項之方法，其中該附接係在自130℃至170℃之一溫度下及/或在自2 MPa至5 Mpa之一壓力下及/或達自100ms至2000ms、較佳地自100 ms至800 ms之一時間實行。
- 一種在一表面安裝技術(SMT)程序期間將一可燒結膜施加至一基材之方法，該方法包含： 提供基材； 提供包含一支撐膜的一預製件，該支撐膜具有一第一表面、及相對於該第一表面的一第二表面，該支撐膜與金屬粒子之一可燒結膜層壓在該第一表面上，但未層壓在該第二表面上； 置放該預製件與該基材接觸，其中該接觸係經由該可燒結膜； 將該可燒結膜附接至該基材，及 將該支撐膜與該可燒結膜分離， 其中： 該置放係使用一取放機器實行，且 在該置放及該附接期間，該取放機器接觸該支撐膜之該第二表面，但不接觸該可燒結膜。
- 一種在一表面安裝技術(SMT)程序期間在一基材上形成可燒結膜之一堆疊之方法，該方法包含： 使用如前述請求項中任一項之方法將一第一可燒結膜施加至一基材；及 在該第一可燒結膜上依序堆疊一或多個額外可燒結膜，該一或多個額外可燒結膜之各者係使用一方法予以堆疊，該方法包含： 提供包含一額外支撐膜的一額外預製件，該額外支撐膜具有一第一表面、及相對於該第一表面的一第二表面，該額外支撐膜與金屬粒子之一額外可燒結膜層壓在該第一表面上，但未層壓在該第二表面上； 使用該取放機器之該置放頭經由該第二表面拾起該額外預製件； 針對該一或多個可燒結膜之該第一者： 使用該取放機器置放各別的該額外預製件與該第一可燒結膜接觸，其中該接觸係經由該額外可燒結膜， 將該額外可燒結膜附接至該第一可燒結膜，及 將該支撐膜與該額外可燒結膜分離；及 針對後續的該等額外可燒結膜： 使用該取放機器置放各別的該額外預製件與緊接在前的該額外可燒結膜接觸，其中該接觸係經由該第二額外可燒結膜或後續的該額外可燒結膜之各別的該預製件之該額外可燒結膜， 將該額外可燒結膜附接至緊接在前的該額外可燒結膜；及 將該支撐膜與該額外可燒結膜分離。
- 如請求項31之方法，其中該第一可燒結膜係由與該一或多個額外可燒結膜相同的材料形成。
- 如請求項31之方法，其中該第一可燒結膜係由具有與該一或多個額外可燒結膜中之至少一者的彼等性質不同的機械性質及/或熱性質之材料形成。
- 如請求項33之方法，其中將兩個額外可燒結膜堆疊在該第一可燒結膜上，以形成具有一內可燒結膜及兩個外可燒結膜的一堆疊，且其中該內可燒結膜係由具有與形成該兩個外可燒結膜之該材料的彼等性質不同的機械性質及/或熱性質之材料形成。
- 如請求項31至34中任一項之方法，其進一步包含在該第一可燒結膜與一額外可燒結膜之間及/或額外可燒結膜之間施加添加劑粒子。
- 如請求項35之方法，其中該等添加劑粒子包含具有比該第一可燒結膜及一或多個額外可燒結膜之該材料更高的一導熱率之粒子。
- 如請求項36之方法，其中具有比該第一可燒結膜及一或多個額外可燒結膜之該材料更高的一導熱率之該等添加劑粒子包含鑽石。
- 如請求項35至37中任一項之方法，其中該等添加劑粒子包含具有與該第一可燒結膜及一或多個額外可燒結膜之該材料不同的一楊氏模數之粒子。
- 一種將一晶粒附接至一基材之方法，該方法包含： 使用如請求項1至30中任一項之方法將一可燒結膜施加至一基材，或者使用如請求項31至38中任一項之方法在一基材上形成可燒結膜之一堆疊； 使一晶粒與該可燒結膜或可燒結膜之堆疊接觸；及 燒結該可燒結膜或可燒結膜之堆疊以將該晶粒附接至該基材。
- 如請求項39之方法，其中該可燒結膜之寬度係小於該晶粒之寬度及該基材之寬度。
- 如請求項40之方法，其中該晶粒包含邊緣鈍化，且該晶粒與該可燒結膜接觸使得該可燒結膜不接觸該邊緣鈍化。
- 一種將一夾件、接合墊、或頂側橋接結構附接至一晶粒之方法，該方法包含： 提供附接至一基材的一晶粒； 將一可燒結膜施加至該晶粒， 使該可燒結膜與一夾件、接合墊、或頂側橋接結構接觸；及 燒結該可燒結膜，以將該夾件、接合墊、或頂側橋接結構附接至該晶粒， 其中： 將該可燒結膜施加至該晶粒係藉由一方法實行，該方法包含： 提供包含一支撐膜的一預製件，該支撐膜具有一第一表面、及相對於該第一表面的一第二表面，該支撐膜與金屬粒子之一可燒結膜層壓在該第一表面上，但未層壓在該第二表面上， 提供包含一置放頭的一取放機器， 使用該取放機器之該置放頭經由該第二表面拾起該預製件， 使用該取放機器置放該預製件與該晶粒接觸，其中該接觸係經由該第二表面， 將該可燒結膜附接至該晶粒，及 將該支撐膜與該可燒結膜分離。
- 如請求項42之方法，其中該可燒結膜包含可燒結膜之一堆疊。
- 一種將一夾件、接合墊、或頂側橋接結構附接至一晶粒之方法，該方法包含： 使用如請求項39至41中任一項之方法將一晶粒附接至一基材； 將一可燒結膜施加至該晶粒， 使該可燒結膜與一夾件、接合墊、或頂側橋接結構接觸；及 燒結該可燒結膜，以將該夾件、接合墊、或頂側橋接結構附接至該晶粒， 其中： 將該可燒結膜施加至該晶粒係藉由一方法實行，該方法包含： 提供包含一支撐膜的一預製件，該支撐膜具有一第一表面、及相對於該第一表面的一第二表面，該支撐膜與金屬粒子之一可燒結膜層壓在該第一表面上，但未層壓在該第二表面上， 提供包含一置放頭的一取放機器， 使用該取放機器之該置放頭經由該第二表面拾起該預製件， 使用該取放機器置放該預製件與該晶粒接觸，其中該接觸係經由該可燒結膜， 將該可燒結膜附接至該晶粒，及 將該支撐膜與該可燒結膜分離。
- 如請求項44之方法，其中該可燒結膜包含可燒結膜之一堆疊。
- 一種製造一電子裝置之方法，該方法包含： 使用如請求項39至41中任一項之方法將一晶粒附接至一基材； 使用如請求項42至45中任一項之方法將一夾件、接合墊、或頂側橋接結構附接至該晶粒。
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| JP2003007733A (ja) * | 2001-06-19 | 2003-01-10 | Mitsubishi Electric Corp | 半導体製造装置およびこれを用いた半導体装置の製造方法 |
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| DE102010044329A1 (de) * | 2010-09-03 | 2012-03-08 | Heraeus Materials Technology Gmbh & Co. Kg | Kontaktierungsmittel und Verfahren zur Kontaktierung elektrischer Bauteile |
| WO2012061511A2 (en) | 2010-11-03 | 2012-05-10 | Fry's Metals, Inc. | Sintering materials and attachment methods using same |
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| SG11201601437UA (en) | 2013-08-29 | 2016-03-30 | Alpha Metals | Composite and multilayered silver films for joining electrical and mechanical components |
| EP3140854A1 (de) * | 2014-05-05 | 2017-03-15 | Heraeus Deutschland GmbH & Co. KG | Verfahren zum aufbringen getrockneter metallsinterzubereitung mittels eines transfersubstrats auf einen träger für elektronikbauteile, entsprechender träger und seine verwendung zum sinterverbinden mit elektronikbauteilen |
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