DE69526748T2 - Substrat für aluminium-nitrid dünne Film und Verfahren zu seiner Herstellung - Google Patents

Substrat für aluminium-nitrid dünne Film und Verfahren zu seiner Herstellung

Info

Publication number
DE69526748T2
DE69526748T2 DE69526748T DE69526748T DE69526748T2 DE 69526748 T2 DE69526748 T2 DE 69526748T2 DE 69526748 T DE69526748 T DE 69526748T DE 69526748 T DE69526748 T DE 69526748T DE 69526748 T2 DE69526748 T2 DE 69526748T2
Authority
DE
Germany
Prior art keywords
manufacture
substrate
thin film
aluminum nitride
nitride thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69526748T
Other languages
English (en)
Other versions
DE69526748D1 (de
Inventor
Yoshiharu Utumi
Takahiro Imai
Naoji Fujimori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6028203A external-priority patent/JPH07237998A/ja
Priority claimed from JP13529194A external-priority patent/JPH082999A/ja
Priority claimed from JP6135292A external-priority patent/JPH082984A/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69526748D1 publication Critical patent/DE69526748D1/de
Application granted granted Critical
Publication of DE69526748T2 publication Critical patent/DE69526748T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
DE69526748T 1994-02-25 1995-02-24 Substrat für aluminium-nitrid dünne Film und Verfahren zu seiner Herstellung Expired - Lifetime DE69526748T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6028203A JPH07237998A (ja) 1994-02-25 1994-02-25 窒化アルミニウム薄膜基板および製造法
JP13529194A JPH082999A (ja) 1994-06-17 1994-06-17 窒化アルミニウム薄膜製造法
JP6135292A JPH082984A (ja) 1994-06-17 1994-06-17 窒化アルミニウム薄膜基板製造法

Publications (2)

Publication Number Publication Date
DE69526748D1 DE69526748D1 (de) 2002-06-27
DE69526748T2 true DE69526748T2 (de) 2002-09-05

Family

ID=27286111

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69526748T Expired - Lifetime DE69526748T2 (de) 1994-02-25 1995-02-24 Substrat für aluminium-nitrid dünne Film und Verfahren zu seiner Herstellung

Country Status (3)

Country Link
US (1) US5571603A (de)
EP (1) EP0669412B1 (de)
DE (1) DE69526748T2 (de)

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US5902640A (en) * 1991-11-25 1999-05-11 The University Of Chicago Method of improving field emission characteristics of diamond thin films
EP0730044B1 (de) * 1995-03-01 2001-06-20 Sumitomo Electric Industries, Limited Boraluminiumnitrid-Beschichtung und Verfahren zu ihrer Herstellung
US6088014A (en) 1996-05-11 2000-07-11 Hitachi, Ltd. Liquid crystal display device
JPH09172223A (ja) * 1995-12-19 1997-06-30 Sony Corp 半導体装置と半導体装置の製造方法
JP3321369B2 (ja) * 1996-09-27 2002-09-03 日本碍子株式会社 表面弾性波装置およびその基板およびその製造方法
JPH10335750A (ja) 1997-06-03 1998-12-18 Sony Corp 半導体基板および半導体装置
US6833280B1 (en) * 1998-03-13 2004-12-21 Micron Technology, Inc. Process for fabricating films of uniform properties on semiconductor devices
US6239536B1 (en) * 1998-09-08 2001-05-29 Tfr Technologies, Inc. Encapsulated thin-film resonator and fabrication method
JP2000113427A (ja) * 1998-10-06 2000-04-21 Tdk Corp 薄膜デバイス、薄膜磁気ヘッドおよび磁気抵抗効果素子並びにそれらの製造方法
US6518637B1 (en) 1999-04-08 2003-02-11 Wayne State University Cubic (zinc-blende) aluminum nitride
WO2000061839A1 (en) * 1999-04-08 2000-10-19 Wayne State University Cubic (zinc-blende) aluminum nitride and method of making same
KR20010029852A (ko) * 1999-06-30 2001-04-16 도다 다다히데 Ⅲ족 질화물계 화합물 반도체 소자 및 그 제조방법
US6828507B1 (en) 1999-07-23 2004-12-07 American Superconductor Corporation Enhanced high temperature coated superconductors joined at a cap layer
US6765151B2 (en) * 1999-07-23 2004-07-20 American Superconductor Corporation Enhanced high temperature coated superconductors
US6669774B1 (en) 1999-07-23 2003-12-30 American Superconductor Corporation Methods and compositions for making a multi-layer article
US6730410B1 (en) 1999-08-24 2004-05-04 Electronic Power Research Institute, Incorporated Surface control alloy substrates and methods of manufacture therefor
US6974501B1 (en) 1999-11-18 2005-12-13 American Superconductor Corporation Multi-layer articles and methods of making same
US6342134B1 (en) * 2000-02-11 2002-01-29 Agere Systems Guardian Corp. Method for producing piezoelectric films with rotating magnetron sputtering system
US6673387B1 (en) 2000-07-14 2004-01-06 American Superconductor Corporation Control of oxide layer reaction rates
JP3925132B2 (ja) 2000-09-27 2007-06-06 セイコーエプソン株式会社 表面弾性波素子、周波数フィルタ、周波数発振器、電子回路、及び電子機器
US20020056401A1 (en) * 2000-10-23 2002-05-16 Rupich Martin W. Precursor solutions and methods of using same
JP2002338388A (ja) * 2001-02-15 2002-11-27 Ngk Insulators Ltd ダイヤモンドコート部材
US7622322B2 (en) * 2001-03-23 2009-11-24 Cornell Research Foundation, Inc. Method of forming an AlN coated heterojunction field effect transistor
JP4815065B2 (ja) * 2001-05-30 2011-11-16 株式会社トクヤマ ヒートシンク及びその製造方法
JP4035971B2 (ja) * 2001-09-03 2008-01-23 豊田合成株式会社 半導体結晶の製造方法
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
JP3935037B2 (ja) * 2002-09-30 2007-06-20 Ｄｏｗａホールディングス株式会社 アルミニウム−セラミックス接合基板の製造方法
US20050016759A1 (en) * 2003-07-21 2005-01-27 Malozemoff Alexis P. High temperature superconducting devices and related methods
EP2400533B1 (de) * 2005-06-20 2019-05-15 Nippon Telegraph And Telephone Corporation Diamant Halbleiterbauelement und Verfahren zur Herstellung
WO2007065018A2 (en) 2005-12-02 2007-06-07 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
CN100461630C (zh) * 2006-01-19 2009-02-11 湖北大学 具有ain晶化过渡层的体声波谐振器的制造方法
TW200806826A (en) * 2006-02-07 2008-02-01 Han H Nee Materials and methods for the manufacture of large crystal diamonds
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
CN107059116B (zh) 2007-01-17 2019-12-31 晶体公司 引晶的氮化铝晶体生长中的缺陷减少
CN101652832B (zh) 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8183086B2 (en) * 2009-06-16 2012-05-22 Chien-Min Sung Diamond GaN devices and associated methods
CN105951177B (zh) 2010-06-30 2018-11-02 晶体公司 使用热梯度控制的大块氮化铝单晶的生长
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
WO2014151264A1 (en) 2013-03-15 2014-09-25 Crystal Is, Inc. Planar contacts to pseudomorphic electronic and optoelectronic devices
CN107488828B (zh) * 2016-06-12 2020-01-03 北京北方华创微电子装备有限公司 形成薄膜的方法以及形成氮化铝薄膜的方法
US10643843B2 (en) * 2016-06-12 2020-05-05 Beijing Naura Microelectronics Equipment Co., Ltd. Film forming method and aluminum nitride film forming method for semiconductor apparatus
JP6982000B2 (ja) * 2016-12-21 2021-12-17 日本碍子株式会社 配向ＡｌＮ焼結体及びその製法
CN111415858A (zh) * 2020-03-12 2020-07-14 中国科学院长春光学精密机械与物理研究所 AlN或AlGaN薄膜材料的制备方法及应用
JP2022051000A (ja) * 2020-09-18 2022-03-31 ローム株式会社 圧電素子及びその製造方法、並びに、表面弾性波素子及び圧電薄膜共振素子

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JPS60119114A (ja) * 1983-11-30 1985-06-26 Murata Mfg Co Ltd 表面波装置
KR970004619B1 (ko) * 1987-10-19 1997-03-29 상요덴기 가부시끼가이샤 탄성 표면파 소자
US5235233A (en) * 1988-03-17 1993-08-10 Fanuc Ltd. Surface acoustic wave device
JPH0220910A (ja) * 1988-03-17 1990-01-24 Fujitsu Ltd 弾性表面波ディバイス
US4952832A (en) * 1989-10-24 1990-08-28 Sumitomo Electric Industries, Ltd. Surface acoustic wave device
JPH03175811A (ja) * 1989-12-05 1991-07-30 Sanyo Electric Co Ltd 弾性表面波素子
JPH04358410A (ja) * 1991-06-05 1992-12-11 Sumitomo Electric Ind Ltd 表面弾性波素子及びその製造方法
JP3132515B2 (ja) * 1991-09-26 2001-02-05 住友電気工業株式会社 表面弾性波素子の製造方法
JP3163606B2 (ja) * 1993-01-29 2001-05-08 住友電気工業株式会社 表面弾性波素子

Also Published As

Publication number Publication date
US5571603A (en) 1996-11-05
EP0669412B1 (de) 2002-05-22
EP0669412A1 (de) 1995-08-30
DE69526748D1 (de) 2002-06-27

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