TWI513042B - 發光裝置及發光裝置封裝件 - Google Patents

發光裝置及發光裝置封裝件 Download PDF

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Publication number
TWI513042B
TWI513042B TW100114356A TW100114356A TWI513042B TW I513042 B TWI513042 B TW I513042B TW 100114356 A TW100114356 A TW 100114356A TW 100114356 A TW100114356 A TW 100114356A TW I513042 B TWI513042 B TW I513042B
Authority
TW
Taiwan
Prior art keywords
layer
light
light emitting
emitting device
illuminating device
Prior art date
Application number
TW100114356A
Other languages
English (en)
Chinese (zh)
Other versions
TW201214765A (en
Inventor
金鮮京
Original Assignee
Ｌｇ伊諾特股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｌｇ伊諾特股份有限公司 filed Critical Ｌｇ伊諾特股份有限公司
Publication of TW201214765A publication Critical patent/TW201214765A/zh
Application granted granted Critical
Publication of TWI513042B publication Critical patent/TWI513042B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
TW100114356A 2010-04-23 2011-04-22 發光裝置及發光裝置封裝件 TWI513042B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100037944A KR101064020B1 (ko) 2010-04-23 2010-04-23 발광 소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
TW201214765A TW201214765A (en) 2012-04-01
TWI513042B true TWI513042B (zh) 2015-12-11

Family

ID=44310820

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100114356A TWI513042B (zh) 2010-04-23 2011-04-22 發光裝置及發光裝置封裝件

Country Status (6)

Country Link
US (1) US8624283B2 (enExample)
EP (1) EP2381490B1 (enExample)
JP (1) JP5788210B2 (enExample)
KR (1) KR101064020B1 (enExample)
CN (1) CN102237463B (enExample)
TW (1) TWI513042B (enExample)

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US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US8791499B1 (en) 2009-05-27 2014-07-29 Soraa, Inc. GaN containing optical devices and method with ESD stability
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
WO2011035265A1 (en) 2009-09-18 2011-03-24 Soraa, Inc. Power light emitting diode and method with current density operation
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
US9847372B2 (en) 2011-12-01 2017-12-19 Micron Technology, Inc. Solid state transducer devices with separately controlled regions, and associated systems and methods
CN104247052B (zh) 2012-03-06 2017-05-03 天空公司 具有减少导光效果的低折射率材料层的发光二极管
US9437783B2 (en) * 2012-05-08 2016-09-06 Cree, Inc. Light emitting diode (LED) contact structures and process for fabricating the same
US9450152B2 (en) 2012-05-29 2016-09-20 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
US10145026B2 (en) 2012-06-04 2018-12-04 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
US9275912B1 (en) 2012-08-30 2016-03-01 Soraa, Inc. Method for quantification of extended defects in gallium-containing nitride crystals
US9299555B1 (en) 2012-09-28 2016-03-29 Soraa, Inc. Ultrapure mineralizers and methods for nitride crystal growth
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US9761763B2 (en) 2012-12-21 2017-09-12 Soraa, Inc. Dense-luminescent-materials-coated violet LEDs
US8802471B1 (en) * 2012-12-21 2014-08-12 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
TWD156894S (zh) * 2013-02-08 2013-11-01 旭明光電股份有限公司 發光二極體晶片
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
KR102098323B1 (ko) * 2013-09-17 2020-05-26 엘지이노텍 주식회사 발광소자
CN104851947B (zh) * 2015-04-21 2017-11-14 北京邮电大学 一种带有表面糙化透光结构的led芯片及其制作方法
KR102363290B1 (ko) * 2016-06-13 2022-02-16 삼성디스플레이 주식회사 광학 터치 필름, 이를 포함하는 표시 장치 및 그 제조 방법
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
US12091771B2 (en) 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
JP2023513570A (ja) 2020-02-11 2023-03-31 エスエルティー テクノロジーズ インコーポレイテッド 改善されたｉｉｉ族窒化物基板、その製造方法、並びにその使用方法
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
FR3115930B1 (fr) * 2020-10-29 2024-03-22 Commissariat Energie Atomique Diode électroluminescente à structure de contact tridimensionnelle, écran d’affichage et procédé de fabrication associé

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Also Published As

Publication number Publication date
CN102237463B (zh) 2016-01-27
US8624283B2 (en) 2014-01-07
EP2381490B1 (en) 2017-07-05
JP2011233897A (ja) 2011-11-17
EP2381490A2 (en) 2011-10-26
US20110260189A1 (en) 2011-10-27
CN102237463A (zh) 2011-11-09
KR101064020B1 (ko) 2011-09-08
EP2381490A3 (en) 2014-10-15
JP5788210B2 (ja) 2015-09-30
TW201214765A (en) 2012-04-01

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