JP5847421B2 - 発光素子、発光素子パッケージ - Google Patents
発光素子、発光素子パッケージ Download PDFInfo
- Publication number
- JP5847421B2 JP5847421B2 JP2011084758A JP2011084758A JP5847421B2 JP 5847421 B2 JP5847421 B2 JP 5847421B2 JP 2011084758 A JP2011084758 A JP 2011084758A JP 2011084758 A JP2011084758 A JP 2011084758A JP 5847421 B2 JP5847421 B2 JP 5847421B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- disposed
- semiconductor layer
- support member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 215
- 239000000463 material Substances 0.000 claims description 33
- 238000009792 diffusion process Methods 0.000 claims description 13
- 238000000465 moulding Methods 0.000 claims description 9
- 230000007480 spreading Effects 0.000 claims description 9
- 238000003892 spreading Methods 0.000 claims description 9
- 239000011810 insulating material Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 506
- 239000000758 substrate Substances 0.000 description 57
- 239000002019 doping agent Substances 0.000 description 30
- 150000001875 compounds Chemical class 0.000 description 21
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 18
- 238000000605 extraction Methods 0.000 description 18
- 229910019897 RuOx Inorganic materials 0.000 description 15
- 150000004767 nitrides Chemical class 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 229910002704 AlGaN Inorganic materials 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 11
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 229910052738 indium Inorganic materials 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 9
- 239000011787 zinc oxide Substances 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 241000408495 Iton Species 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 239000011162 core material Substances 0.000 description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910001195 gallium oxide Inorganic materials 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- QYHNIMDZIYANJH-UHFFFAOYSA-N diindium Chemical compound [In]#[In] QYHNIMDZIYANJH-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- -1 for example Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910021476 group 6 element Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 101001045744 Sus scrofa Hepatocyte nuclear factor 1-beta Proteins 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
110 第1導電型の半導体層
112 光抽出構造
120 活性層
130 第2導電型の半導体層
135 発光構造層
140 伝導層
145 接合層
150 支持部材
160 第1絶縁部材
162 第3の絶縁層
163 段差構造
165 第2の絶縁部材
171、173 第1の電極
175 第1のパッド
183 第2の電極
185 第2のパッド
Claims (15)
- 第1導電型の半導体層、前記第1導電型の半導体層下の活性層、前記活性層下の第2導電型の半導体層を含む発光構造層と、
前記発光構造層下の伝導層と、
前記伝導層下の接合層と、
前記接合層下の支持部材と、
前記支持部材下の第1のパッドと、
前記支持部材下に前記第1のパッドから離隔して配置された第2のパッドと、
前記第1導電型の半導体層と前記第1のパッドの間に連結された第1の電極と、
前記接合層と前記第2のパッドの間に連結された第2の電極と、を含み、
前記発光構造層の少なくとも一側面に配置された段差構造を含み、前記段差構造は、前記第2導電型の半導体層の一側下面から前記第1導電型の半導体層の下部まで延長され、
前記発光構造層の少なくとも一側面に配置された前記段差構造に配置された第1の絶縁部材を含み、前記第1の絶縁部材の内側部は、前記発光構造層の外側面よりも内側に配置され、
前記第1の電極は、前記第1導電型の半導体層の上面及び側面に連結される、発光素子。 - 前記第1の電極は、
前記発光構造層の第1の側面に配置され、前記第1導電型の半導体層に連結された第1の連結電極と、
前記支持部材の第1の側面に配置され、前記第1の連結電極と前記第1のパッドとを互いに連結する第2の連結電極と、
を含む請求項1に記載の発光素子。 - 前記第1の連結電極の一部は、前記第1導電型の半導体層の上面に配置され、
前記第1の連結電極の一部と前記伝導層は、発光構造層に対して互いに反対側に配置される、請求項2に記載の発光素子。 - 前記接合層は、
前記支持部材上に配置された第1の接合層と、
前記第1の接合層と前記伝導層との間に配置された第2の接合層と、を含み、
前記第1の絶縁部材は第1及び第2の絶縁層を含み、
前記第1の絶縁層は前記第1の連結電極が前記活性層、前記第2導電型の半導体層及び前記第1の接合層に接触することを防止し、
前記第2の絶縁層は、第2の連結電極と前記第2の接合層との間に配置される、請求項2または3に記載の発光素子。 - 前記発光構造層と前記接合層との間に配置された第3の絶縁層を含む、請求項2〜4のいずれか一項に記載の発光素子。
- 前記第2の連結電極は前記支持部材の第1の側面に配置され、
前記第2の電極は前記支持部材の第2の側面に配置され、
前記支持部材の第1の側面と第2の側面は互いに異なる側面である、請求項2〜5のいずれか一項に記載の発光素子。 - 前記第2の電極は、前記支持部材の第2の側面から接合層の側面まで延長される、請求項6に記載の発光素子。
- 前記第1の絶縁部材の外側面は、前記発光構造層の外側面と同一平面上に配置される、請求項1〜7のいずれか一項に記載の発光素子。
- 前記伝導層は、
前記第2導電型の半導体層下に接触したオーミック層と、
前記オーミック層下に配置された反射層と、を含み、
前記第2の電極は、前記接合層の側面及び前記支持部材の第2の側面に配置される、請求項1〜8のいずれか一項に記載の発光素子。 - 前記支持部材は絶縁性材質を含む、請求項1〜9のいずれか一項に記載の発光素子。
- 前記支持部材はキャリアウェハを含み、前記支持部材の表面に形成された第2の絶縁部材をさらに含む、請求項1〜9のいずれか一項に記載の発光素子。
- 前記第1導電型の半導体層上に透光性物質で形成された電流拡散層を含み、前記第1の電極は前記電流拡散層に連結される、請求項1〜11のいずれか一項に記載の発光素子。
- 前記接合層の幅は前記発光構造層の幅の少なくとも50%以上を含み、前記第1導電型の半導体層上に、前記第1の電極と連結され、透光性物質を含む電流拡散層を含む、請求項1〜11のいずれか一項に記載の発光素子。
- 前記支持部材は、少なくとも一つのドーピング領域を有し、前記ドーピング領域は、前記第1のパッド及び前記第2のパッドのうち少なくとも一つと連結される、請求項11に記載の発光素子。
- 本体と、
前記本体内に配置された第1及び第2のリードフレームと、
前記第1及び第2のリードフレーム上に配置され、前記第1及び第2のリードフレームと電気的に連結された、請求項1〜14のいずれか一項に記載の発光素子と、
前記発光素子上のモールディング部材と、を含む発光素子パッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0033490 | 2010-04-12 | ||
KR1020100033490A KR101039879B1 (ko) | 2010-04-12 | 2010-04-12 | 발광소자 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011223000A JP2011223000A (ja) | 2011-11-04 |
JP5847421B2 true JP5847421B2 (ja) | 2016-01-20 |
Family
ID=44166502
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011084758A Active JP5847421B2 (ja) | 2010-04-12 | 2011-04-06 | 発光素子、発光素子パッケージ |
Country Status (6)
Country | Link |
---|---|
US (1) | US8471241B2 (ja) |
EP (1) | EP2375460B1 (ja) |
JP (1) | JP5847421B2 (ja) |
KR (1) | KR101039879B1 (ja) |
CN (1) | CN102214764B (ja) |
TW (1) | TWI500189B (ja) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5528900B2 (ja) | 2010-04-30 | 2014-06-25 | ローム株式会社 | 発光素子モジュール |
EP2562814B1 (en) * | 2011-08-22 | 2020-08-19 | LG Innotek Co., Ltd. | Light emitting device and light emitting device package |
JP5776535B2 (ja) * | 2011-12-16 | 2015-09-09 | 豊田合成株式会社 | Iii族窒化物半導体発光素子 |
JP5729328B2 (ja) * | 2012-02-16 | 2015-06-03 | 豊田合成株式会社 | Iii族窒化物半導体発光素子およびその製造方法 |
KR101891257B1 (ko) * | 2012-04-02 | 2018-08-24 | 삼성전자주식회사 | 반도체 발광장치 및 그 제조방법 |
US9450152B2 (en) * | 2012-05-29 | 2016-09-20 | Micron Technology, Inc. | Solid state transducer dies having reflective features over contacts and associated systems and methods |
KR101946914B1 (ko) * | 2012-06-08 | 2019-02-12 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지 및 라이트 유닛 |
EP2674992A1 (en) * | 2012-06-15 | 2013-12-18 | Imec | Led and method for making led |
JP6275399B2 (ja) * | 2012-06-18 | 2018-02-07 | エルジー イノテック カンパニー リミテッド | 照明装置 |
KR101946919B1 (ko) * | 2012-08-20 | 2019-02-12 | 엘지이노텍 주식회사 | 발광소자 |
JP6239311B2 (ja) * | 2012-08-20 | 2017-11-29 | エルジー イノテック カンパニー リミテッド | 発光素子 |
KR101956096B1 (ko) * | 2012-09-03 | 2019-03-11 | 엘지이노텍 주식회사 | 발광소자 |
KR101886156B1 (ko) * | 2012-08-21 | 2018-09-11 | 엘지이노텍 주식회사 | 발광소자 |
KR101956101B1 (ko) * | 2012-09-06 | 2019-03-11 | 엘지이노텍 주식회사 | 발광소자 |
KR101976459B1 (ko) | 2012-11-02 | 2019-05-09 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지 및 라이트 유닛 |
US9196606B2 (en) | 2013-01-09 | 2015-11-24 | Nthdegree Technologies Worldwide Inc. | Bonding transistor wafer to LED wafer to form active LED modules |
CN103066192B (zh) * | 2013-01-10 | 2015-11-18 | 李刚 | 半导体发光光源及制造该光源和半导体发光芯片的方法 |
DE102013103079A1 (de) * | 2013-03-26 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
KR102181381B1 (ko) * | 2013-08-05 | 2020-11-20 | 엘지이노텍 주식회사 | 발광소자 |
CN103594592B (zh) * | 2013-11-08 | 2016-06-01 | 溧阳市江大技术转移中心有限公司 | 具有粗化透明电极的倒装发光二极管 |
KR102170213B1 (ko) * | 2014-01-21 | 2020-10-26 | 엘지이노텍 주식회사 | 발광 소자 |
DE102014102029A1 (de) * | 2014-02-18 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement |
KR102164087B1 (ko) * | 2014-06-10 | 2020-10-12 | 엘지이노텍 주식회사 | 발광소자 및 이를 구비한 발광소자 패키지 |
KR101540762B1 (ko) * | 2014-12-04 | 2015-07-31 | 루미마이크로 주식회사 | 발광 소자 및 발광 소자 패키지 |
WO2017208321A1 (ja) * | 2016-05-31 | 2017-12-07 | サンケン電気株式会社 | 発光装置 |
CN108604625A (zh) * | 2016-05-31 | 2018-09-28 | 三垦电气株式会社 | 发光装置 |
CN110176438B (zh) * | 2019-06-11 | 2021-06-08 | 厦门市三安光电科技有限公司 | 发光二极管 |
CN112670391A (zh) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | 一种发光二极管及其制造方法 |
CN112635630B (zh) * | 2020-12-31 | 2022-05-03 | 深圳第三代半导体研究院 | 一种发光二极管及其制造方法 |
US11997868B2 (en) * | 2021-01-05 | 2024-05-28 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display device including buffer filled indented glass region |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3326545B2 (ja) * | 1994-09-30 | 2002-09-24 | ローム株式会社 | 半導体発光素子 |
US6340824B1 (en) | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
JPH11145519A (ja) | 1997-09-02 | 1999-05-28 | Toshiba Corp | 半導体発光素子、半導体発光装置および画像表示装置 |
JP4024994B2 (ja) * | 2000-06-30 | 2007-12-19 | 株式会社東芝 | 半導体発光素子 |
TWI327781B (en) * | 2003-02-19 | 2010-07-21 | Nichia Corp | Nitride semiconductor device |
JP2005252222A (ja) * | 2004-02-03 | 2005-09-15 | Matsushita Electric Ind Co Ltd | 半導体発光装置、照明モジュール、照明装置、表示素子、および半導体発光装置の製造方法 |
EP1733439B1 (en) * | 2004-03-18 | 2013-05-15 | Panasonic Corporation | Nitride based led with a p-type injection region |
ATE524839T1 (de) * | 2004-06-30 | 2011-09-15 | Cree Inc | Verfahren zum kapseln eines lichtemittierenden bauelements und gekapselte lichtemittierende bauelemente im chip-massstab |
TWI247441B (en) * | 2005-01-21 | 2006-01-11 | United Epitaxy Co Ltd | Light emitting diode and fabricating method thereof |
JP5016808B2 (ja) * | 2005-11-08 | 2012-09-05 | ローム株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子製造方法 |
KR100746783B1 (ko) * | 2006-02-28 | 2007-08-06 | 엘지전자 주식회사 | 발광소자 패키지 및 그 제조방법 |
CN100446288C (zh) * | 2006-08-01 | 2008-12-24 | 金芃 | 通孔垂直结构的半导体芯片及其制造方法 |
WO2008093880A1 (ja) * | 2007-02-02 | 2008-08-07 | Sanyo Electric Co., Ltd. | 半導体装置及びその製造方法 |
KR100907223B1 (ko) | 2007-07-03 | 2009-07-10 | 한국광기술원 | 수직형 발광 다이오드 및 그의 제조방법 |
TWI372478B (en) * | 2008-01-08 | 2012-09-11 | Epistar Corp | Light-emitting device |
WO2010033792A1 (en) * | 2008-09-18 | 2010-03-25 | Lumenz Llc | Textured semiconductor light-emitting devices |
KR101014155B1 (ko) * | 2010-03-10 | 2011-02-10 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
-
2010
- 2010-04-12 KR KR1020100033490A patent/KR101039879B1/ko active IP Right Grant
-
2011
- 2011-03-16 US US13/049,126 patent/US8471241B2/en active Active
- 2011-03-16 TW TW100108886A patent/TWI500189B/zh active
- 2011-03-24 EP EP11159580.7A patent/EP2375460B1/en not_active Not-in-force
- 2011-04-06 JP JP2011084758A patent/JP5847421B2/ja active Active
- 2011-04-12 CN CN201110094248.5A patent/CN102214764B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN102214764A (zh) | 2011-10-12 |
US8471241B2 (en) | 2013-06-25 |
JP2011223000A (ja) | 2011-11-04 |
TW201143173A (en) | 2011-12-01 |
TWI500189B (zh) | 2015-09-11 |
US20110248237A1 (en) | 2011-10-13 |
CN102214764B (zh) | 2016-03-09 |
EP2375460B1 (en) | 2015-08-12 |
EP2375460A1 (en) | 2011-10-12 |
KR101039879B1 (ko) | 2011-06-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5847421B2 (ja) | 発光素子、発光素子パッケージ | |
JP5414711B2 (ja) | 発光素子 | |
JP5820503B2 (ja) | 発光素子 | |
JP5762786B2 (ja) | 発光素子、発光素子パッケージ | |
JP5960436B2 (ja) | 発光素子及び発光素子パッケージ | |
JP6062149B2 (ja) | 発光素子及び発光素子パッケージ | |
JP2011192999A (ja) | 発光素子 | |
KR20130027275A (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR20130021296A (ko) | 발광소자, 발광소자 패키지, 및 라이트 유닛 | |
KR20130009040A (ko) | 발광소자, 발광소자 제조방법, 발광소자 패키지, 및 라이트 유닛 | |
KR20130067148A (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR20130065327A (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR20130045686A (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR101914077B1 (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR101786082B1 (ko) | 발광 소자 | |
KR101865919B1 (ko) | 발광 소자, 발광 소자 패키지, 라이트 유닛, 발광 소자 제조방법 | |
KR20130029543A (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR101896680B1 (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR101842594B1 (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR20130049388A (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR101921150B1 (ko) | 발광소자, 발광소자 패키지, 라이트 유닛 | |
KR101886130B1 (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR20130039617A (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR20130078988A (ko) | 발광소자, 발광소자 패키지 및 라이트 유닛 | |
KR20120087038A (ko) | 발광 소자 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20130801 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140327 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150128 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150224 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150522 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20151027 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151125 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5847421 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |