JP5960436B2 - 発光素子及び発光素子パッケージ - Google Patents
発光素子及び発光素子パッケージ Download PDFInfo
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- JP5960436B2 JP5960436B2 JP2012004810A JP2012004810A JP5960436B2 JP 5960436 B2 JP5960436 B2 JP 5960436B2 JP 2012004810 A JP2012004810 A JP 2012004810A JP 2012004810 A JP2012004810 A JP 2012004810A JP 5960436 B2 JP5960436 B2 JP 5960436B2
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- Prior art keywords
- light emitting
- layer
- semiconductor layer
- contact
- reflective electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Description
11 第1半導体層
12 第1活性層
13 第2半導体層
15 第1オーミック接触層
17 第1反射電極
19 第1金属層
20 第2発光構造物
21 第3半導体層
22 第2活性層
23 第4半導体層
25 第2オーミック接触層
27 第2反射電極
29 第2金属層
30 第3発光構造物
31 第5半導体層
32 第3活性層
33 第6半導体層
35 第3オーミック接触層
37 第3反射電極
39 第3金属層
40 第3絶縁層
41 第1絶縁層
43 第1コンタクト部
50 拡散障壁層
51 第2絶縁層
53 第2コンタクト部
60 ボンディング層
70 支持部材
80 電極
Claims (10)
- 支持基板と、
前記支持基板上に配置された第1発光構造物であって、第1導電型の第1半導体層、前記第1半導体層の下の第1活性層、前記第1活性層の下の第2導電型の第2半導体層を有する第1発光構造物と、
前記第1発光構造物の下の第1反射電極と、
前記第1反射電極のまわりに配置された第1金属層と、
前記支持基板上に配置された第2発光構造物であって、第1導電型の第3半導体層、前記第3半導体層の下の第2活性層、前記第2活性層の下の第2導電型の第4半導体層を有する第2発光構造物と、
前記第2発光構造物の下の第2反射電極と、
前記第2反射電極のまわりに配置された第2金属層と、
前記第1発光構造物の第1半導体層の内部に接触して、前記第2反射電極と電気的に連結されたコンタクト部と、を備え、
前記第2発光構造物は、前記第1発光構造物から離隔して配置され、
前記第2金属層の上部面が、前記第1発光構造物と前記第2発光構造物との間に露出され、
前記コンタクト部は、前記第2金属層の下部に接触されている、発光素子。 - 前記コンタクト部は、前記第2金属層の側面に接触している、請求項1に記載の発光素子。
- 前記第1反射電極と前記第2導電型の第2半導体層との間に配置された第1オーミック接触層をさらに備え、
前記第2反射電極と前記第2導電型の第4半導体層との間に配置された第2オーミック接触層をさらに備える、請求項1又は2に記載の発光素子。 - 前記コンタクト部は、前記第2導電型の第2半導体層の間及び前記コンタクト部と前記第1活性層との間に配置された第1絶縁層をさらに備える、請求項1乃至3のいずれかに記載の発光素子。
- 前記第1絶縁層は、前記第2半導体層内で前記コンタクト部を取り囲む、請求項4に記載の発光素子。
- 前記第1絶縁層の一部領域は、前記支持基板と前記第2反射電極との間に配置されている、請求項4又は5に記載の発光素子。
- 前記第1導電型の第1半導体層がGaN層を含む場合、前記コンタクト部は前記第1半導体層のGa面に接触している、請求項1乃至6のいずれかに記載の発光素子。
- 前記第2金属層の上部面上に絶縁層が配置されていない、請求項1乃至7のいずれかに記載の発光素子。
- 胴体と、
前記胴体の上に配置された、請求項1乃至8のいずれかに記載の発光素子と、
前記発光素子に電気的に連結された第1リード電極及び第2リード電極とを備える発光素子パッケージ。 - 基板と、
前記基板の上に配置された、請求項1乃至8のいずれかに記載の発光素子と、
前記発光素子から提供される光が過ぎ去る光学部材とを備えるライトユニット。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2011-0083723 | 2011-08-22 | ||
KR1020110083723A KR20130021300A (ko) | 2011-08-22 | 2011-08-22 | 발광소자, 발광소자 패키지, 및 라이트 유닛 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013046049A JP2013046049A (ja) | 2013-03-04 |
JP2013046049A5 JP2013046049A5 (ja) | 2015-02-26 |
JP5960436B2 true JP5960436B2 (ja) | 2016-08-02 |
Family
ID=45445968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012004810A Active JP5960436B2 (ja) | 2011-08-22 | 2012-01-13 | 発光素子及び発光素子パッケージ |
Country Status (5)
Country | Link |
---|---|
US (1) | US9564422B2 (ja) |
EP (1) | EP2562815B1 (ja) |
JP (1) | JP5960436B2 (ja) |
KR (1) | KR20130021300A (ja) |
CN (1) | CN102956779B (ja) |
Families Citing this family (14)
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EP2755245A3 (en) * | 2013-01-14 | 2016-05-04 | LG Innotek Co., Ltd. | Light emitting device |
KR102098110B1 (ko) * | 2013-04-11 | 2020-04-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지 및 라이트 유닛 |
KR102191213B1 (ko) * | 2013-04-12 | 2020-12-15 | 서울바이오시스 주식회사 | 자외선 발광 소자 |
WO2014178654A1 (ko) * | 2013-04-30 | 2014-11-06 | 주식회사 세미콘라이트 | 반도체 발광소자, 반도체 발광소자의 제조방법 및 반도체 발광소자를 포함하는 백라이트 유닛 |
KR101521574B1 (ko) * | 2013-06-25 | 2015-05-19 | 비비에스에이 리미티드 | 반도체 발광소자를 제조하는 방법 |
KR101534941B1 (ko) * | 2013-11-15 | 2015-07-07 | 현대자동차주식회사 | 도전성 전극패턴의 형성방법 및 이를 포함하는 태양전지의 제조방법 |
US10910350B2 (en) * | 2014-05-24 | 2021-02-02 | Hiphoton Co., Ltd. | Structure of a semiconductor array |
JP6462274B2 (ja) * | 2014-08-21 | 2019-01-30 | 株式会社東芝 | 半導体発光素子 |
TWI552394B (zh) * | 2014-11-18 | 2016-10-01 | 隆達電子股份有限公司 | 發光二極體結構與發光二極體模組 |
JP2017059638A (ja) * | 2015-09-15 | 2017-03-23 | 株式会社東芝 | 半導体発光素子 |
TWI646706B (zh) * | 2015-09-21 | 2019-01-01 | 隆達電子股份有限公司 | 發光二極體晶片封裝體 |
JP6354799B2 (ja) * | 2015-12-25 | 2018-07-11 | 日亜化学工業株式会社 | 発光素子 |
KR102381866B1 (ko) * | 2017-05-02 | 2022-04-04 | 서울바이오시스 주식회사 | 자외선 발광 다이오드 |
CN109768134A (zh) * | 2019-01-28 | 2019-05-17 | 华引芯(武汉)科技有限公司 | 一种发光高效率反转垂直结构高压芯片及其制备方法 |
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TWI223460B (en) * | 2003-09-23 | 2004-11-01 | United Epitaxy Co Ltd | Light emitting diodes in series connection and method of making the same |
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JP5123269B2 (ja) * | 2008-09-30 | 2013-01-23 | ソウル オプト デバイス カンパニー リミテッド | 発光素子及びその製造方法 |
DE102009006177A1 (de) * | 2008-11-28 | 2010-06-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
TWM374153U (en) * | 2009-03-19 | 2010-02-11 | Intematix Technology Ct Corp | Light emitting device applied to AC drive |
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KR100986570B1 (ko) * | 2009-08-31 | 2010-10-07 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR100986560B1 (ko) * | 2010-02-11 | 2010-10-07 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
JP2011199221A (ja) * | 2010-03-24 | 2011-10-06 | Hitachi Cable Ltd | 発光ダイオード |
WO2011126248A2 (en) * | 2010-04-06 | 2011-10-13 | Seoul Opto Device Co., Ltd. | Light emitting diode and method of fabricating the same |
DE102011015821B4 (de) | 2011-04-01 | 2023-04-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
US9765934B2 (en) * | 2011-05-16 | 2017-09-19 | The Board Of Trustees Of The University Of Illinois | Thermally managed LED arrays assembled by printing |
-
2011
- 2011-08-22 KR KR1020110083723A patent/KR20130021300A/ko not_active Application Discontinuation
-
2012
- 2012-01-13 EP EP12151102.6A patent/EP2562815B1/en active Active
- 2012-01-13 JP JP2012004810A patent/JP5960436B2/ja active Active
- 2012-02-02 CN CN201210023389.2A patent/CN102956779B/zh active Active
- 2012-04-09 US US13/442,102 patent/US9564422B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2013046049A (ja) | 2013-03-04 |
KR20130021300A (ko) | 2013-03-05 |
CN102956779B (zh) | 2017-06-06 |
EP2562815A3 (en) | 2014-08-27 |
CN102956779A (zh) | 2013-03-06 |
EP2562815A2 (en) | 2013-02-27 |
US20130049008A1 (en) | 2013-02-28 |
US9564422B2 (en) | 2017-02-07 |
EP2562815B1 (en) | 2018-11-14 |
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