JP5405467B2 - 発光デバイスパッケージ - Google Patents
発光デバイスパッケージ Download PDFInfo
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- JP5405467B2 JP5405467B2 JP2010522800A JP2010522800A JP5405467B2 JP 5405467 B2 JP5405467 B2 JP 5405467B2 JP 2010522800 A JP2010522800 A JP 2010522800A JP 2010522800 A JP2010522800 A JP 2010522800A JP 5405467 B2 JP5405467 B2 JP 5405467B2
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- Prior art keywords
- phosphor
- light emitting
- emitting device
- phosphor layer
- device package
- Prior art date
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 251
- 229920005989 resin Polymers 0.000 claims description 36
- 239000011347 resin Substances 0.000 claims description 36
- 230000005484 gravity Effects 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 18
- 239000000945 filler Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 238000001228 spectrum Methods 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
110 ボディ
112 第1キャビティ
112A 第1キャビティの側面
115 上層部
116 第2キャビティ
116A 第2キャビティの側面
118、119 リードパターン
120 発光素子
122 ワイヤ
130 第1蛍光体層
132 第1蛍光体
140 第2蛍光体層
142 第2蛍光体
T1 ボディ厚さ
T2 上層部厚さ
Claims (21)
- 複数のキャビティを含むボディと、
前記キャビティに発光素子と、
前記発光素子を密封し、第1蛍光体及び第1の樹脂材を含む第1蛍光体層と、
前記第1蛍光体層の上に前記第1蛍光体と比重差がある第2蛍光体及び第2の樹脂材を含む第2蛍光体層と、を含み、
前記第1の蛍光体の比重は、前記第1の樹脂材の比重よりも小さく、
前記第2の蛍光体の比重は、前記第2の樹脂材の比重よりも大きい、
発光デバイスパッケージ。 - 前記キャビティ内で、前記第2蛍光体層の上に第3蛍光体を含む第3蛍光体層を含む請求項1に記載の発光デバイスパッケージ。
- 前記第1蛍光体は前記第2蛍光体と異なるスペクトラムの光を発光し、前記第1蛍光体の比重は前記第2蛍光体の比重より小さいことを特徴とする請求項1に記載の発光デバイスパッケージ。
- 前記第1蛍光体、前記第2蛍光体及び前記第3蛍光体は異なるスペクトラムの光を発光し、前記第1蛍光体は前記第2蛍光体の比重より小さいことを特徴とする請求項2に記載の発光デバイスパッケージ。
- 前記第1蛍光体は前記第2蛍光体と同一スペクトラムの光を発光し、前記第1蛍光体の比重は前記第2蛍光体の比重より大きい請求項1に記載の発光デバイスパッケージ。
- 前記第1蛍光体層または前記第2蛍光体層には少なくとも2種類の蛍光体を含む請求項1に記載の発光デバイスパッケージ。
- 前記第2蛍光体層及び前記第3蛍光体層の厚さは20〜100μmである請求項2に記載の発光デバイスパッケージ。
- 前記発光素子は青色LEDチップであり、前記第1蛍光体は赤色蛍光体を含み、前記第2蛍光体は緑色蛍光体を含む請求項1に記載の発光デバイスパッケージ。
- 前記発光素子はUV-LEDチップであり、前記第1〜第3蛍光体は赤色蛍光体、緑色蛍光体及び青色蛍光体中の少なくとも1つを含む請求項2に記載の発光デバイスパッケージ。
- 前記第1蛍光体層と前記第2蛍光体層の間に透光性樹脂層を含む請求項1に記載の発光デバイスパッケージ。
- キャビティを含むボディと、
前記キャビティに発光素子と、
前記発光素子と電気的に連結される複数個のリードパターンと、
前記発光素子を密封し、前記発光素子の近傍に第1蛍光体及び第1の樹脂材を含む第1蛍光体層と、
前記第1蛍光体層の上に前記第1蛍光体と比重差がある第2蛍光体及び第2の樹脂材を含む第2蛍光体層と、を含み、
前記第1の蛍光体の比重は、前記第1の樹脂材の比重よりも小さく、
前記第2の蛍光体の比重は、前記第2の樹脂材の比重よりも大きい、
発光デバイスパッケージ。 - 前記発光素子は青色LEDチップであり、前記第1蛍光体及び第2蛍光体は黄色蛍光体を含む請求項11に記載の発光デバイスパッケージ。
- 前記第1蛍光体層と前記第2蛍光体層の間に透光性樹脂層を含み、前記第1蛍光体層の厚さは100〜150μmであり、前記第2蛍光体層の厚さは30〜100μmである請求項11に記載の発光デバイスパッケージ。
- 前記第1蛍光体の比重は3以上または前記第1蛍光体層をなす物質の比重より大きい請求項11に記載の発光デバイスパッケージ。
- 前記第2蛍光体の粒子は前記第1蛍光体の粒子の1/10以下の大きさである請求項11に記載の発光デバイスパッケージ。
- 前記第1蛍光体層及び前記第2蛍光体層中の少なくとも1つの層にはナノ(n)単位のフィラーを含む請求項11に記載の発光デバイスパッケージ。
- 前記発光素子は青色LEDチップであり、前記キャビティの中央領域には前記発光素子から放出された光が青白色光に発光され、前記キャビティの中央の周りには前記発光素子から放出された光が黄白色光に発光される請求項11に記載の発光デバイスパッケージ。
- 前記第1蛍光体層と前記第2蛍光体層の間に透光性樹脂層を含み、前記発光素子は青色LEDチップであり、前記第1及び第2蛍光体は黄色蛍光体を含み、前記キャビティの中央領域には前記発光素子から放出された光が青白色光に発光され、前記キャビティの中央の周りには前記発光素子から放出された光が黄白色光に発光される請求項11に記載の発光デバイスパッケージ。
- 前記第1蛍光体層は前記キャビティの内部容積の1/2以上の量に形成される請求項11に記載の発光デバイスパッケージ。
- 前記第1蛍光体層及び前記第2蛍光体層の表面中の少なくとも1つの表面は、フラット状、凸レンズ形状及び凹レンズ形状中の少なくとも1つを含む請求項11に記載の発光デバイスパッケージ。
- 前記第1蛍光体は、発光素子上に配置され、
前記第2蛍光体は、前記第1蛍光体層に隣接するように配置される、
請求項1に記載の発光デバイスパッケージ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070088287A KR101360624B1 (ko) | 2007-08-31 | 2007-08-31 | 발광 다이오드 패키지 및 그 제조방법 |
KR10-2007-0088287 | 2007-08-31 | ||
KR1020070091807A KR101393948B1 (ko) | 2007-09-10 | 2007-09-10 | 발광 다이오드 패키지 및 그 제조방법 |
KR10-2007-0091807 | 2007-09-10 | ||
PCT/KR2008/004999 WO2009028861A2 (en) | 2007-08-31 | 2008-08-26 | Light emitting device package |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010538453A JP2010538453A (ja) | 2010-12-09 |
JP5405467B2 true JP5405467B2 (ja) | 2014-02-05 |
Family
ID=40388008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010522800A Active JP5405467B2 (ja) | 2007-08-31 | 2008-08-26 | 発光デバイスパッケージ |
Country Status (5)
Country | Link |
---|---|
US (1) | US8344400B2 (ja) |
EP (1) | EP2191517B1 (ja) |
JP (1) | JP5405467B2 (ja) |
CN (1) | CN101809768B (ja) |
WO (1) | WO2009028861A2 (ja) |
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US20100237370A1 (en) | 2010-09-23 |
US8344400B2 (en) | 2013-01-01 |
EP2191517A4 (en) | 2013-07-31 |
CN101809768A (zh) | 2010-08-18 |
WO2009028861A2 (en) | 2009-03-05 |
EP2191517A2 (en) | 2010-06-02 |
JP2010538453A (ja) | 2010-12-09 |
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