JP2008288410A - 半導体発光装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 229920005989 resin Polymers 0.000 claims abstract description 46
- 239000011347 resin Substances 0.000 claims abstract description 46
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000009826 distribution Methods 0.000 claims abstract description 9
- 238000010030 laminating Methods 0.000 claims abstract description 3
- 239000011248 coating agent Substances 0.000 claims description 21
- 238000000576 coating method Methods 0.000 claims description 21
- 238000005259 measurement Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 2
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- 230000007423 decrease Effects 0.000 description 3
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- 229920002050 silicone resin Polymers 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
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Abstract
【解決手段】半導体発光装置製造方法は、平板基板上に半導体発光素子を実装する工程S1と、平板基板上で半導体発光素子の周囲を満たしてドーム状に覆うように少なくとも蛍光体層および被覆樹脂層を順次積層して半導体発光装置を形成する工程S3,S4と、形成された半導体発光装置の発光状態を測定する工程S5と、測定結果に基づいて発光分布を調整するために被覆樹脂層の最表面に凸レンズ部を、液滴吐出装置を用いて形成する工程S6,S7と、を有する。
【選択図】図1
Description
2 ・・・発光素子
2a・・・発光素子電極
2b・・・ボンディングワイヤ
3 ・・・内部樹脂層
4 ・・・蛍光体層
5 ・・・被覆樹脂層
5a・・・凸レンズ部
Claims (6)
- 平板基板上に半導体発光素子を実装する実装工程と、
前記実装工程の後に、前記平板基板上で前記半導体発光素子の周囲を満たしてドーム状に覆うように少なくとも蛍光体層および被覆樹脂層を順次積層して半導体発光装置を形成する積層工程と、
前記積層工程で形成された前記半導体発光装置の発光状態を測定する測定工程と、
前記測定工程での測定結果に基づき、前記半導体発光装置の発光分布を調整するために前記被覆樹脂層の最表面に凸レンズ部を、液滴吐出装置を用いて形成する凸レンズ部形成工程と、
を備えたことを特徴とする半導体発光装置製造方法。 - 前記凸レンズ部形成工程は、前記測定工程における前記半導体発光装置の発光状態の測定結果に基づいて決定された形状、個数、大きさおよび配置の前記凸レンズ部を形成することを特徴とする請求項1に記載の半導体発光装置製造方法。
- 前記積層工程は、前記半導体発光素子と前記蛍光体層の間に内部樹脂層を積層する工程を含むことを特徴とする請求項1または請求項2に記載の半導体発光装置製造方法。
- 前記凸レンズ部形成工程は、集束超音波を用いた液滴吐出装置を用いて透明樹脂の液滴を上向きに吐出させること、を特徴とする請求項1ないし請求項3のいずれか一項に記載の半導体発光装置製造方法。
- 前記凸レンズ部形成工程は、前記凸レンズ部の形状が半楕円球形になるように凸レンズ部を形成すること、を特徴とする請求項1ないし請求項4のいずれか一項に記載の半導体発光装置製造方法。
- 平板基板と、この平板基板上に実装された半導体発光素子と、前記平板基板上で前記半導体発光素子の周囲を満たしてドーム状に覆うように順次積層された蛍光体層および被覆樹脂層と、前記被覆樹脂層の最表面に形成された凸レンズ部とを備えた半導体発光装置において、
前記凸レンズ部の形状、個数、大きさおよび配置は、前記半導体発光装置の発光状態の測定結果に基づいて決定されていることを特徴とする半導体発光装置。
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JP2007132553A JP2008288410A (ja) | 2007-05-18 | 2007-05-18 | 半導体発光装置およびその製造方法 |
US12/122,446 US7790485B2 (en) | 2007-05-18 | 2008-05-16 | Semiconductor light emitting device and method of manufacturing the same |
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JP2007132553A JP2008288410A (ja) | 2007-05-18 | 2007-05-18 | 半導体発光装置およびその製造方法 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010186968A (ja) * | 2009-02-13 | 2010-08-26 | Sharp Corp | 発光装置および発光装置の製造方法 |
JP2010267900A (ja) * | 2009-05-18 | 2010-11-25 | Citizen Holdings Co Ltd | Led光源装置の製造方法 |
JP2011091101A (ja) * | 2009-10-20 | 2011-05-06 | Stanley Electric Co Ltd | 発光装置および発光装置の製造方法 |
JP2012212574A (ja) * | 2011-03-31 | 2012-11-01 | Panasonic Corp | 光学レンズ及び照明装置 |
JP2013038136A (ja) * | 2011-08-04 | 2013-02-21 | Sharp Corp | 発光装置および表示装置 |
JP2015031894A (ja) * | 2013-08-06 | 2015-02-16 | 三菱電機株式会社 | 映像表示装置およびその製造方法 |
WO2015072120A1 (ja) * | 2013-11-12 | 2015-05-21 | パナソニックIpマネジメント株式会社 | 発光装置、発光モジュール、照明器具及びランプ |
JP2019192778A (ja) * | 2018-04-25 | 2019-10-31 | 日亜化学工業株式会社 | 発光装置の製造方法及び発光装置 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5006102B2 (ja) * | 2007-05-18 | 2012-08-22 | 株式会社東芝 | 発光装置およびその製造方法 |
US9082921B2 (en) | 2007-10-31 | 2015-07-14 | Cree, Inc. | Multi-die LED package |
US9666762B2 (en) | 2007-10-31 | 2017-05-30 | Cree, Inc. | Multi-chip light emitter packages and related methods |
US9172012B2 (en) | 2007-10-31 | 2015-10-27 | Cree, Inc. | Multi-chip light emitter packages and related methods |
US8940561B2 (en) * | 2008-01-15 | 2015-01-27 | Cree, Inc. | Systems and methods for application of optical materials to optical elements |
KR100998017B1 (ko) * | 2009-02-23 | 2010-12-03 | 삼성엘이디 주식회사 | 발광소자 패키지용 렌즈 및 이를 구비하는 발광소자 패키지 |
TWI463708B (zh) * | 2009-02-24 | 2014-12-01 | Advanced Optoelectronic Tech | 側面出光型發光元件封裝結構及其製造方法 |
US8033691B2 (en) * | 2009-05-12 | 2011-10-11 | Koninklijke Philips Electronics N.V. | LED lamp producing sparkle |
JP2012069589A (ja) * | 2010-09-21 | 2012-04-05 | Toshiba Corp | 発光装置 |
DE102012110403A1 (de) * | 2012-10-30 | 2014-04-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US20140209950A1 (en) * | 2013-01-31 | 2014-07-31 | Luxo-Led Co., Limited | Light emitting diode package module |
WO2020176810A1 (en) | 2019-02-28 | 2020-09-03 | Assia Spe, Llc | Ergodic spectrum management systems and methods |
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JPS5650587A (en) * | 1979-10-02 | 1981-05-07 | Nec Corp | Manufacture of light emitting diode |
JPH0899408A (ja) * | 1994-09-30 | 1996-04-16 | Toshiba Corp | インクジェット記録装置 |
JP2001057446A (ja) * | 1999-06-09 | 2001-02-27 | Sanyo Electric Co Ltd | 混成集積回路装置 |
JP2003046134A (ja) * | 2001-07-26 | 2003-02-14 | Matsushita Electric Works Ltd | 発光装置の製造方法 |
JP2003046133A (ja) * | 2001-07-26 | 2003-02-14 | Matsushita Electric Works Ltd | 発光装置およびその製造方法 |
JP2006303303A (ja) * | 2005-04-22 | 2006-11-02 | Stanley Electric Co Ltd | 光学特性制御ledデバイス及びその製造方法 |
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JP5006102B2 (ja) * | 2007-05-18 | 2012-08-22 | 株式会社東芝 | 発光装置およびその製造方法 |
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-
2007
- 2007-05-18 JP JP2007132553A patent/JP2008288410A/ja active Pending
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2008
- 2008-05-16 US US12/122,446 patent/US7790485B2/en not_active Expired - Fee Related
Patent Citations (6)
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JPS5650587A (en) * | 1979-10-02 | 1981-05-07 | Nec Corp | Manufacture of light emitting diode |
JPH0899408A (ja) * | 1994-09-30 | 1996-04-16 | Toshiba Corp | インクジェット記録装置 |
JP2001057446A (ja) * | 1999-06-09 | 2001-02-27 | Sanyo Electric Co Ltd | 混成集積回路装置 |
JP2003046134A (ja) * | 2001-07-26 | 2003-02-14 | Matsushita Electric Works Ltd | 発光装置の製造方法 |
JP2003046133A (ja) * | 2001-07-26 | 2003-02-14 | Matsushita Electric Works Ltd | 発光装置およびその製造方法 |
JP2006303303A (ja) * | 2005-04-22 | 2006-11-02 | Stanley Electric Co Ltd | 光学特性制御ledデバイス及びその製造方法 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010186968A (ja) * | 2009-02-13 | 2010-08-26 | Sharp Corp | 発光装置および発光装置の製造方法 |
US8736160B2 (en) | 2009-02-13 | 2014-05-27 | Sharp Kabushiki Kaisha | Light-emitting apparatus and method for manufacturing same |
US9175818B2 (en) | 2009-02-13 | 2015-11-03 | Sharp Kabushiki Kaisha | Light-emitting apparatus and method for manufacturing same |
JP2010267900A (ja) * | 2009-05-18 | 2010-11-25 | Citizen Holdings Co Ltd | Led光源装置の製造方法 |
JP2011091101A (ja) * | 2009-10-20 | 2011-05-06 | Stanley Electric Co Ltd | 発光装置および発光装置の製造方法 |
JP2012212574A (ja) * | 2011-03-31 | 2012-11-01 | Panasonic Corp | 光学レンズ及び照明装置 |
JP2013038136A (ja) * | 2011-08-04 | 2013-02-21 | Sharp Corp | 発光装置および表示装置 |
JP2015031894A (ja) * | 2013-08-06 | 2015-02-16 | 三菱電機株式会社 | 映像表示装置およびその製造方法 |
WO2015072120A1 (ja) * | 2013-11-12 | 2015-05-21 | パナソニックIpマネジメント株式会社 | 発光装置、発光モジュール、照明器具及びランプ |
JP2019192778A (ja) * | 2018-04-25 | 2019-10-31 | 日亜化学工業株式会社 | 発光装置の製造方法及び発光装置 |
JP7037053B2 (ja) | 2018-04-25 | 2022-03-16 | 日亜化学工業株式会社 | 発光装置の製造方法及び発光装置 |
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US7790485B2 (en) | 2010-09-07 |
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