JP2004006991A5 - - Google Patents
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- Publication number
- JP2004006991A5 JP2004006991A5 JP2003300714A JP2003300714A JP2004006991A5 JP 2004006991 A5 JP2004006991 A5 JP 2004006991A5 JP 2003300714 A JP2003300714 A JP 2003300714A JP 2003300714 A JP2003300714 A JP 2003300714A JP 2004006991 A5 JP2004006991 A5 JP 2004006991A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- electrode
- semiconductor device
- laminated
- iridium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000004767 nitrides Chemical class 0.000 claims 13
- 239000004065 semiconductor Substances 0.000 claims 13
- 229910052741 iridium Inorganic materials 0.000 claims 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 5
- 229910052703 rhodium Inorganic materials 0.000 claims 5
- 239000010948 rhodium Substances 0.000 claims 5
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003300714A JP4507532B2 (ja) | 2002-08-27 | 2003-08-26 | 窒化物半導体素子 |
| US10/676,267 US6921928B2 (en) | 2002-08-27 | 2003-10-02 | Nitride semiconductor element |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002246573 | 2002-08-27 | ||
| JP2003300714A JP4507532B2 (ja) | 2002-08-27 | 2003-08-26 | 窒化物半導体素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004006991A JP2004006991A (ja) | 2004-01-08 |
| JP2004006991A5 true JP2004006991A5 (enExample) | 2006-10-12 |
| JP4507532B2 JP4507532B2 (ja) | 2010-07-21 |
Family
ID=30447690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003300714A Expired - Fee Related JP4507532B2 (ja) | 2002-08-27 | 2003-08-26 | 窒化物半導体素子 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6921928B2 (enExample) |
| JP (1) | JP4507532B2 (enExample) |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
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| AU2003252359A1 (en) * | 2002-08-01 | 2004-02-23 | Nichia Corporation | Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same |
| FR2853141A1 (fr) * | 2003-03-26 | 2004-10-01 | Kyocera Corp | Appareil a semi-conducteur, procede pour faire croitre un semi-conducteur a nitrure et procede de production d'un appareil a semi-conducteur |
| US20050051781A1 (en) * | 2003-09-08 | 2005-03-10 | United Epitaxy Company, Ltd. | Light emitting diode and method of making the same |
| JP3767863B2 (ja) * | 2003-12-18 | 2006-04-19 | ローム株式会社 | 半導体発光素子およびその製法 |
| KR100586948B1 (ko) * | 2004-01-19 | 2006-06-07 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| KR100482511B1 (ko) * | 2004-02-05 | 2005-04-14 | 에피밸리 주식회사 | Ⅲ-질화물계 반도체 발광소자 |
| US7611641B2 (en) * | 2004-02-20 | 2009-11-03 | Koninklijke Philips Electronics N.V. | Illumination system comprising a radiation source and a fluorescent material |
| TWI270217B (en) | 2004-02-24 | 2007-01-01 | Showa Denko Kk | Gallium nitride-based compound semiconductor multilayer structure and production method thereof |
| JP2005277401A (ja) * | 2004-02-24 | 2005-10-06 | Showa Denko Kk | 窒化ガリウム系化合物半導体積層物およびその製造方法 |
| JP4670034B2 (ja) * | 2004-03-12 | 2011-04-13 | 学校法人早稲田大学 | 電極を備えたGa2O3系半導体層 |
| US7462086B2 (en) * | 2004-04-21 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Phosphor for phosphor-converted semiconductor light emitting device |
| TWI242893B (en) * | 2004-05-07 | 2005-11-01 | Lite On Technology Corp | White light-emitting apparatus |
| JP2006229219A (ja) * | 2004-05-12 | 2006-08-31 | Showa Denko Kk | III族窒化物p型半導体およびその製造方法 |
| US7683391B2 (en) * | 2004-05-26 | 2010-03-23 | Lockheed Martin Corporation | UV emitting LED having mesa structure |
| US20050274971A1 (en) * | 2004-06-10 | 2005-12-15 | Pai-Hsiang Wang | Light emitting diode and method of making the same |
| JP4116985B2 (ja) * | 2004-07-26 | 2008-07-09 | 松下電器産業株式会社 | 発光装置 |
| US7582905B2 (en) * | 2004-09-08 | 2009-09-01 | Rohm Co., Ltd. | Semiconductor light emitting device |
| US7417220B2 (en) | 2004-09-09 | 2008-08-26 | Toyoda Gosei Co., Ltd. | Solid state device and light-emitting element |
| JP4721691B2 (ja) * | 2004-11-26 | 2011-07-13 | 京セラ株式会社 | 発光素子およびその発光素子を用いた照明装置 |
| US7307291B2 (en) * | 2005-01-22 | 2007-12-11 | Formosa Epitaxy Incorporation | Gallium-nitride based ultraviolet photo detector |
| JP4601464B2 (ja) * | 2005-03-10 | 2010-12-22 | 株式会社沖データ | 半導体装置、プリントヘッド、及びそれを用いた画像形成装置 |
| WO2006109760A1 (ja) * | 2005-04-08 | 2006-10-19 | Mitsubishi Cable Industries, Ltd. | 半導体素子およびその製造方法 |
| WO2006120908A1 (ja) * | 2005-05-02 | 2006-11-16 | Nichia Corporation | 窒化物系半導体素子及びその製造方法 |
| JP5138873B2 (ja) | 2005-05-19 | 2013-02-06 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| JP2006332258A (ja) * | 2005-05-25 | 2006-12-07 | Matsushita Electric Ind Co Ltd | 窒化物半導体装置及びその製造方法 |
| KR101041843B1 (ko) * | 2005-07-30 | 2011-06-17 | 삼성엘이디 주식회사 | 질화물계 화합물 반도체 발광소자 및 그 제조방법 |
| JP5025932B2 (ja) * | 2005-09-26 | 2012-09-12 | 昭和電工株式会社 | 窒化物半導体発光素子の製造方法 |
| US7772604B2 (en) | 2006-01-05 | 2010-08-10 | Illumitex | Separate optical device for directing light from an LED |
| US20070200119A1 (en) * | 2006-02-26 | 2007-08-30 | Yun-Li Li | Flip-chip led package and led chip |
| JP5232969B2 (ja) * | 2006-03-23 | 2013-07-10 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子の製造方法 |
| US20070241351A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials, Inc. | Double-sided nitride structures |
| US8087960B2 (en) | 2006-10-02 | 2012-01-03 | Illumitex, Inc. | LED system and method |
| TWI338387B (en) * | 2007-05-28 | 2011-03-01 | Delta Electronics Inc | Current spreading layer with micro/nano structure, light-emitting diode apparatus and its manufacturing method |
| US8410510B2 (en) * | 2007-07-03 | 2013-04-02 | Nichia Corporation | Semiconductor light emitting device and method for fabricating the same |
| KR20100122485A (ko) | 2008-02-08 | 2010-11-22 | 일루미텍스, 인크. | 발광체층 쉐이핑을 위한 시스템 및 방법 |
| KR101449035B1 (ko) * | 2008-04-30 | 2014-10-08 | 엘지이노텍 주식회사 | 반도체 발광소자 |
| TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
| JP5078039B2 (ja) * | 2009-01-19 | 2012-11-21 | 学校法人早稲田大学 | Ga2O3系半導体素子及びGa2O3系半導体素子の製造方法 |
| US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
| US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
| US10205059B2 (en) * | 2010-02-09 | 2019-02-12 | Epistar Corporation | Optoelectronic device and the manufacturing method thereof |
| US8927959B2 (en) | 2010-06-18 | 2015-01-06 | Sensor Electronic Technology, Inc. | Deep ultraviolet light emitting diode |
| US8907322B2 (en) | 2010-06-18 | 2014-12-09 | Sensor Electronic Technology, Inc. | Deep ultraviolet light emitting diode |
| US9806226B2 (en) | 2010-06-18 | 2017-10-31 | Sensor Electronic Technology, Inc. | Deep ultraviolet light emitting diode |
| JP5517882B2 (ja) * | 2010-10-20 | 2014-06-11 | シャープ株式会社 | 窒化物半導体発光素子 |
| JP5652234B2 (ja) * | 2011-02-07 | 2015-01-14 | 日亜化学工業株式会社 | 半導体発光素子 |
| JP5869961B2 (ja) * | 2012-05-28 | 2016-02-24 | 株式会社東芝 | 半導体発光装置 |
| JP2013251493A (ja) * | 2012-06-04 | 2013-12-12 | Toshiba Corp | 素子モジュール |
| KR102005236B1 (ko) * | 2012-07-05 | 2019-07-31 | 삼성전자주식회사 | 반사 전극 형성을 위한 콘택층을 포함하는 반도체 발광 소자 |
| DE102012107384A1 (de) | 2012-08-10 | 2014-02-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zum Herstellen eines Spiegelbereichs auf einem Halbleiterkörper |
| DE102012108883A1 (de) * | 2012-09-20 | 2014-03-20 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips |
| US9419194B2 (en) | 2013-08-13 | 2016-08-16 | Palo Alto Research Center Incorporated | Transparent electron blocking hole transporting layer |
| US9761774B2 (en) * | 2014-12-16 | 2017-09-12 | Epistar Corporation | Light-emitting element with protective cushioning |
| TWI514628B (zh) | 2013-10-24 | 2015-12-21 | Lextar Electronics Corp | 電極結構與具有電極結構的發光二極體結構 |
| TWI625868B (zh) * | 2014-07-03 | 2018-06-01 | 晶元光電股份有限公司 | 光電元件及其製造方法 |
| JP2016062911A (ja) * | 2014-09-12 | 2016-04-25 | 株式会社東芝 | 半導体発光装置 |
| US20170104135A1 (en) * | 2015-10-13 | 2017-04-13 | Sensor Electronic Technology, Inc. | Light Emitting Diode Mounting Structure |
Family Cites Families (23)
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| JPH06204887A (ja) * | 1992-12-30 | 1994-07-22 | Casio Comput Co Ltd | データ圧縮伸張装置 |
| US5807774A (en) * | 1996-12-06 | 1998-09-15 | Sharp Kabushiki Kaisha | Simple method of fabricating ferroelectric capacitors |
| JPH10247747A (ja) * | 1997-03-05 | 1998-09-14 | Toshiba Corp | 半導体発光素子およびその製造方法 |
| JP3365607B2 (ja) * | 1997-04-25 | 2003-01-14 | シャープ株式会社 | GaN系化合物半導体装置及びその製造方法 |
| JP3255224B2 (ja) * | 1997-05-28 | 2002-02-12 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体素子及びその製造方法 |
| US6168873B1 (en) * | 1997-05-29 | 2001-01-02 | Canon Kabushiki Kaisha | Electrode substrate and recording medium |
| JPH11204887A (ja) * | 1998-01-19 | 1999-07-30 | Toshiba Corp | 低抵抗電極を有する半導体装置 |
| JP4183299B2 (ja) * | 1998-03-25 | 2008-11-19 | 株式会社東芝 | 窒化ガリウム系化合物半導体発光素子 |
| US6284654B1 (en) * | 1998-04-16 | 2001-09-04 | Advanced Technology Materials, Inc. | Chemical vapor deposition process for fabrication of hybrid electrodes |
| JP3847477B2 (ja) * | 1998-12-17 | 2006-11-22 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子 |
| US6139780A (en) * | 1998-05-28 | 2000-10-31 | Sharp Kabushiki Kaisha | Dynamic random access memories with dielectric compositions stable to reduction |
| JP3427732B2 (ja) * | 1998-06-17 | 2003-07-22 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法 |
| JP2000299528A (ja) | 1999-04-12 | 2000-10-24 | Nec Corp | 半導体レーザおよびその製造方法 |
| TW454330B (en) * | 1999-05-26 | 2001-09-11 | Matsushita Electronics Corp | Semiconductor apparatus and its manufacturing method |
| JP2001053339A (ja) * | 1999-08-11 | 2001-02-23 | Toshiba Corp | 半導体発光素子およびその製造方法 |
| JP4470262B2 (ja) * | 1999-09-07 | 2010-06-02 | オルガノ株式会社 | イオンクロマトグラフィー用カラム充填剤 |
| JP3441059B2 (ja) * | 1999-12-10 | 2003-08-25 | スタンレー電気株式会社 | 半導体素子及びその製造方法 |
| JP2001189430A (ja) * | 1999-12-28 | 2001-07-10 | Toshiba Corp | 強誘電体キャパシタ |
| KR100790964B1 (ko) * | 2000-02-16 | 2008-01-04 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물반도체 레이저소자 |
| JP2001345477A (ja) * | 2000-06-01 | 2001-12-14 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
| JP2002164575A (ja) * | 2000-11-27 | 2002-06-07 | Nichia Chem Ind Ltd | 窒化物半導体発光素子 |
| US6660577B2 (en) * | 2002-02-23 | 2003-12-09 | Taiwan Semiconductor Manufacturing Co. Ltd | Method for fabricating metal gates in deep sub-micron devices |
| JP2004014725A (ja) * | 2002-06-06 | 2004-01-15 | Toyoda Gosei Co Ltd | 半導体発光素子 |
-
2003
- 2003-08-26 JP JP2003300714A patent/JP4507532B2/ja not_active Expired - Fee Related
- 2003-10-02 US US10/676,267 patent/US6921928B2/en not_active Expired - Lifetime
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