JP2009194295A5 - - Google Patents

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Publication number
JP2009194295A5
JP2009194295A5 JP2008035868A JP2008035868A JP2009194295A5 JP 2009194295 A5 JP2009194295 A5 JP 2009194295A5 JP 2008035868 A JP2008035868 A JP 2008035868A JP 2008035868 A JP2008035868 A JP 2008035868A JP 2009194295 A5 JP2009194295 A5 JP 2009194295A5
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JP
Japan
Prior art keywords
nitride semiconductor
layer
light emitting
type nitride
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008035868A
Other languages
English (en)
Japanese (ja)
Other versions
JP5085369B2 (ja
JP2009194295A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008035868A priority Critical patent/JP5085369B2/ja
Priority claimed from JP2008035868A external-priority patent/JP5085369B2/ja
Priority to US12/193,992 priority patent/US20090206360A1/en
Publication of JP2009194295A publication Critical patent/JP2009194295A/ja
Publication of JP2009194295A5 publication Critical patent/JP2009194295A5/ja
Priority to US13/478,024 priority patent/US8686442B2/en
Application granted granted Critical
Publication of JP5085369B2 publication Critical patent/JP5085369B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008035868A 2008-02-18 2008-02-18 窒化物半導体発光装置及びその製造方法 Expired - Fee Related JP5085369B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008035868A JP5085369B2 (ja) 2008-02-18 2008-02-18 窒化物半導体発光装置及びその製造方法
US12/193,992 US20090206360A1 (en) 2008-02-18 2008-08-19 Nitride semiconductor light emitting device and method of manufacturing the same
US13/478,024 US8686442B2 (en) 2008-02-18 2012-05-22 Nitride semiconductor light emitting device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008035868A JP5085369B2 (ja) 2008-02-18 2008-02-18 窒化物半導体発光装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2009194295A JP2009194295A (ja) 2009-08-27
JP2009194295A5 true JP2009194295A5 (enExample) 2010-11-18
JP5085369B2 JP5085369B2 (ja) 2012-11-28

Family

ID=40954273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008035868A Expired - Fee Related JP5085369B2 (ja) 2008-02-18 2008-02-18 窒化物半導体発光装置及びその製造方法

Country Status (2)

Country Link
US (2) US20090206360A1 (enExample)
JP (1) JP5085369B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5526712B2 (ja) * 2009-11-05 2014-06-18 豊田合成株式会社 半導体発光素子
US8716743B2 (en) * 2012-02-02 2014-05-06 Epistar Corporation Optoelectronic semiconductor device and the manufacturing method thereof
US9419156B2 (en) 2013-08-30 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Package and method for integration of heterogeneous integrated circuits
US9099623B2 (en) 2013-08-30 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Manufacture including substrate and package structure of optical chip
JP7146589B2 (ja) * 2018-11-15 2022-10-04 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
CN112795871A (zh) * 2020-12-25 2021-05-14 至芯半导体(杭州)有限公司 一种AlN薄膜的制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04253378A (ja) * 1991-01-29 1992-09-09 Sanyo Electric Co Ltd 光起電力装置の製造方法
JP2783349B2 (ja) 1993-07-28 1998-08-06 日亜化学工業株式会社 ｎ型窒化ガリウム系化合物半導体層の電極及びその形成方法
EP1450415A3 (en) * 1993-04-28 2005-05-04 Nichia Corporation Gallium nitride-based III-V group compound semiconductor device
WO1998019375A1 (en) * 1996-10-30 1998-05-07 Hitachi, Ltd. Optical information processor and semiconductor light emitting device suitable for the same
US6459100B1 (en) * 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
WO2000052796A1 (en) * 1999-03-04 2000-09-08 Nichia Corporation Nitride semiconductor laser element
JP3587081B2 (ja) * 1999-05-10 2004-11-10 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子
JP2004140052A (ja) * 2002-10-16 2004-05-13 Sanyo Electric Co Ltd 電極構造およびその製造方法
JP2004214530A (ja) * 2003-01-08 2004-07-29 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型化合物半導体装置の製造方法
JP4508534B2 (ja) 2003-01-17 2010-07-21 シャープ株式会社 窒化物半導体のための電極構造及びその作製方法
JP4733371B2 (ja) 2004-08-18 2011-07-27 三菱化学株式会社 ｎ型窒化物半導体用のオーミック電極およびその製造方法
US20060124956A1 (en) * 2004-12-13 2006-06-15 Hui Peng Quasi group III-nitride substrates and methods of mass production of the same
JP4653671B2 (ja) * 2005-03-14 2011-03-16 株式会社東芝 発光装置
CN101124704A (zh) * 2005-03-16 2008-02-13 松下电器产业株式会社 氮化物半导体装置及其制造方法
KR100706952B1 (ko) * 2005-07-22 2007-04-12 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자 및 그 제조방법
US7777217B2 (en) * 2005-12-12 2010-08-17 Kyma Technologies, Inc. Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same

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