JP2012195602A5 - - Google Patents

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Publication number
JP2012195602A5
JP2012195602A5 JP2012124360A JP2012124360A JP2012195602A5 JP 2012195602 A5 JP2012195602 A5 JP 2012195602A5 JP 2012124360 A JP2012124360 A JP 2012124360A JP 2012124360 A JP2012124360 A JP 2012124360A JP 2012195602 A5 JP2012195602 A5 JP 2012195602A5
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JP
Japan
Prior art keywords
semiconductor layer
light emitting
electrode
semiconductor
layer
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JP2012124360A
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English (en)
Japanese (ja)
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JP5740350B2 (ja
JP2012195602A (ja
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Publication of JP2012195602A5 publication Critical patent/JP2012195602A5/ja
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JP2012124360A 2012-05-31 2012-05-31 半導体発光素子 Active JP5740350B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012124360A JP5740350B2 (ja) 2012-05-31 2012-05-31 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012124360A JP5740350B2 (ja) 2012-05-31 2012-05-31 半導体発光素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2011055859A Division JP5050109B2 (ja) 2011-03-14 2011-03-14 半導体発光素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014076811A Division JP5788046B2 (ja) 2014-04-03 2014-04-03 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2012195602A JP2012195602A (ja) 2012-10-11
JP2012195602A5 true JP2012195602A5 (enExample) 2014-05-22
JP5740350B2 JP5740350B2 (ja) 2015-06-24

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ID=47087157

Family Applications (1)

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JP2012124360A Active JP5740350B2 (ja) 2012-05-31 2012-05-31 半導体発光素子

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JP (1) JP5740350B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6011244B2 (ja) * 2012-10-24 2016-10-19 日亜化学工業株式会社 半導体発光素子
JP6024432B2 (ja) * 2012-12-10 2016-11-16 日亜化学工業株式会社 半導体発光素子
JP6159130B2 (ja) * 2013-04-12 2017-07-05 スタンレー電気株式会社 半導体発光素子
KR102181429B1 (ko) * 2014-06-11 2020-11-23 엘지이노텍 주식회사 발광소자 및 조명시스템
JP2017005191A (ja) * 2015-06-15 2017-01-05 株式会社東芝 半導体発光装置
US10263150B2 (en) 2016-05-10 2019-04-16 Rohm Co., Ltd. Semiconductor light emitting device capable of increasing luminous efficiency under a low applied current
JP7324395B2 (ja) * 2018-09-27 2023-08-10 日亜化学工業株式会社 発光素子及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4122785B2 (ja) * 2002-01-30 2008-07-23 日亜化学工業株式会社 発光素子
DE102008032318A1 (de) * 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines solchen
DE102008030584A1 (de) * 2008-06-27 2009-12-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement

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