JP2012195602A5

JP2012195602A5 -

Info

Publication number: JP2012195602A5
Application number: JP2012124360A
Authority: JP
Filing date: 2012-05-31
Publication date: 2014-05-22
Anticipated expiration: 2031-03-14

Description

実施形態によれば、凹凸を有する第１面と、前記第１面とは反対側の第２面と、を有する第１導電形の第１半導体層と、前記第１半導体層の前記第２面の側に設けられた第２導電形の第２半導体層と、前記第１半導体層の前記第２面のうちの第１領域と、前記第２半導体層と、の間に設けられ、発光光を放出する発光層と、前記第１半導体層の前記第２面のうちの、前記第１領域とは異なる第２領域において前記第１半導体層と接する第１電極と、前記第２半導体層の前記発光層とは反対側で前記第２半導体層と接する第２電極と、前記第２半導体層の前記発光層とは反対側に設けられ前記第１電極と導通する支持基板と、前記第１電極と前記発光層との間、前記第１電極と前記第２半導体層との間、前記第１電極と前記第２電極との間、及び、前記第２電極と前記支持基板との間に設けられた絶縁層と、前記支持基板と前記第１電極との間、及び、前記絶縁層と前記支持基板との間に設けられた金属部と、前記第１電極と前記金属部との間に設けられ、前記第１電極と前記金属部とを接合する中間金属層と、を備えたことを特徴とする半導体発光素子が提供される。 According to the embodiment, a first semiconductor layer of a first conductivity type having a first surface having irregularities and a second surface opposite to the first surface, and the second of the first semiconductor layer. A light emitting element provided between a second semiconductor layer of a second conductivity type provided on the surface side, a first region of the second surface of the first semiconductor layer, and the second semiconductor layer; A light emitting layer that emits light; a first electrode that contacts the first semiconductor layer in a second region of the second surface of the first semiconductor layer different from the first region; and the second semiconductor layer A second electrode in contact with the second semiconductor layer on a side opposite to the light emitting layer, a support substrate provided on a side opposite to the light emitting layer of the second semiconductor layer and electrically connected to the first electrode, Between one electrode and the light emitting layer, between the first electrode and the second semiconductor layer, between the first electrode and the second electrode, and And an insulating layer provided between the second electrode and the support substrate, a metal provided between the support substrate and the first electrode, and between the insulating layer and the support substrate. And an intermediate metal layer that is provided between the first electrode and the metal part and joins the first electrode and the metal part. .

積層構造体１００の第２主面１００ｂにおける凹部１００ｔには第１電極５０が設けられている。第１電極５０は積層構造体１００の外側に延びて一部が露出している。この露出した部分にパッド６５が設けられている。 A first electrode 50 is provided in the recess 100 t in the second main surface 100 b of the multilayer structure 100. The first electrode 50 extends outside the laminated structure 100 and is partially exposed. Pad 6 5 is provided in the exposed portion.

そして、引き出し部を被覆している誘電体４５の一部を除去し、その領域にパッド６５を形成する。パッド６５としては、例えばＴｉ／Ｐｔ／Ａｕの積層膜が用いられる。パッド６５の膜厚は、例えば８００ｎｍである。このパッド６５にはボンディングワイヤが接続される。ボンディング特性を向上させるため、パッド６５の表面に例えばめっきによってＡｕを厚く（例えば１０μｍ）形成することが望ましい。 Then, to remove a portion of the dielectric 45 covering the lead portions to form a pad 6 5 in the region. The pad 6 5, for example, a stacked film of Ti / Pt / Au is used. The film thickness of the pad 65 is, for example, 800 nm. Bonding wire is connected to the pad 6 5. To improve the bonding properties, thick Au for example by plating the surface of the pad 6 5 (e.g. 10 [mu] m) it is desirable to form.

Claims

A first semiconductor layer of a first conductivity type having a first surface having irregularities and a second surface opposite to the first surface;
A second semiconductor layer of a second conductivity type provided on the second surface side of the first semiconductor layer;
Said first region of said second surface of the first semiconductor layer, and said second semiconductor layer, provided between a light emitting layer emitting light emission light,
A first electrode in contact with the first semiconductor layer in a second region different from the first region of the second surface of the first semiconductor layer;
A second electrode that Sessu and the second semiconductor layer on the opposite side to the light emitting layer of the second semiconductor layer,
A support substrate provided on a side opposite to the light emitting layer of the second semiconductor layer and electrically connected to the first electrode;
Between the first electrode and the light emitting layer, between the first electrode and the second semiconductor layer, between the first electrode and the second electrode, and between the second electrode and the support substrate, An insulating layer provided between
A metal part provided between the support substrate and the first electrode, and between the insulating layer and the support substrate;
An intermediate metal layer that is provided between the first electrode and the metal part and joins the first electrode and the metal part;
A semiconductor light emitting device comprising:

The semiconductor light emitting element according to claim 1, wherein a portion of the second electrode that contacts the second semiconductor layer is reflective.

The semiconductor light emitting element according to claim 1, wherein the metal part includes an AuSn alloy.

The semiconductor light-emitting element according to claim 1, wherein the support substrate is a Ge substrate.

A pad is provided at a position that does not overlap the first and second semiconductor layers and the light emitting layer as viewed in the stacking direction from the first semiconductor layer to the second semiconductor layer, and the pad portion is electrically connected to the second electrode. the device according to any one of claims 1-4, characterized in being.

The said 1st surface has the uneven | corrugated | grooved part which has an unevenness | corrugation of a pitch longer than the peak wavelength of the said emitted light, and a flat part flatter than the said uneven | corrugated part, The any one of Claims 1-5 characterized by the above-mentioned. The semiconductor light emitting element as described in one.

The flat portion, the semiconductor light emitting device according to claim 6 Symbol mounting and having a short pitch of irregularities than the peak wavelength of the emitted light.

The outer edge of the flat portion when viewed in the stacking direction from the first semiconductor layer toward the second semiconductor layer is more than the outer edge of the contact surface between the first electrode and the first semiconductor layer when viewed in the stacking direction. The semiconductor light emitting device according to claim 6 , wherein the semiconductor light emitting device is located outside.

9. The semiconductor light emitting element according to claim 8, wherein a reflectance of the contact surface with respect to the emitted light is lower than a reflectance of the surface of the second electrode facing the second semiconductor layer with respect to the emitted light.

The semiconductor light emitting element according to claim 6 , further comprising a dielectric layer covering the flat portion.

The first semiconductor layer has a recess provided in the second surface,
The semiconductor light emitting element according to claim 1, wherein the first electrode is in contact with the first semiconductor layer at a bottom surface of the recess.

The semiconductor light emitting device according to claim 1, wherein the first semiconductor layer, the light emitting layer, and the second semiconductor layer include a nitride semiconductor.

The semiconductor light emitting element according to claim 1, wherein a peak wavelength of the emitted light is 370 nanometers or more and 400 nanometers or less.