JP5085369B2 - 窒化物半導体発光装置及びその製造方法 - Google Patents

窒化物半導体発光装置及びその製造方法 Download PDF

Info

Publication number
JP5085369B2
JP5085369B2 JP2008035868A JP2008035868A JP5085369B2 JP 5085369 B2 JP5085369 B2 JP 5085369B2 JP 2008035868 A JP2008035868 A JP 2008035868A JP 2008035868 A JP2008035868 A JP 2008035868A JP 5085369 B2 JP5085369 B2 JP 5085369B2
Authority
JP
Japan
Prior art keywords
layer
nitride semiconductor
light emitting
electrode
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008035868A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009194295A (ja
JP2009194295A5 (enExample
Inventor
昭久 寺野
亜紀 武居
Original Assignee
日本オクラロ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本オクラロ株式会社 filed Critical 日本オクラロ株式会社
Priority to JP2008035868A priority Critical patent/JP5085369B2/ja
Priority to US12/193,992 priority patent/US20090206360A1/en
Publication of JP2009194295A publication Critical patent/JP2009194295A/ja
Publication of JP2009194295A5 publication Critical patent/JP2009194295A5/ja
Priority to US13/478,024 priority patent/US8686442B2/en
Application granted granted Critical
Publication of JP5085369B2 publication Critical patent/JP5085369B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008035868A 2008-02-18 2008-02-18 窒化物半導体発光装置及びその製造方法 Expired - Fee Related JP5085369B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008035868A JP5085369B2 (ja) 2008-02-18 2008-02-18 窒化物半導体発光装置及びその製造方法
US12/193,992 US20090206360A1 (en) 2008-02-18 2008-08-19 Nitride semiconductor light emitting device and method of manufacturing the same
US13/478,024 US8686442B2 (en) 2008-02-18 2012-05-22 Nitride semiconductor light emitting device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008035868A JP5085369B2 (ja) 2008-02-18 2008-02-18 窒化物半導体発光装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2009194295A JP2009194295A (ja) 2009-08-27
JP2009194295A5 JP2009194295A5 (enExample) 2010-11-18
JP5085369B2 true JP5085369B2 (ja) 2012-11-28

Family

ID=40954273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008035868A Expired - Fee Related JP5085369B2 (ja) 2008-02-18 2008-02-18 窒化物半導体発光装置及びその製造方法

Country Status (2)

Country Link
US (2) US20090206360A1 (enExample)
JP (1) JP5085369B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5526712B2 (ja) * 2009-11-05 2014-06-18 豊田合成株式会社 半導体発光素子
US8716743B2 (en) * 2012-02-02 2014-05-06 Epistar Corporation Optoelectronic semiconductor device and the manufacturing method thereof
US9419156B2 (en) * 2013-08-30 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Package and method for integration of heterogeneous integrated circuits
US9099623B2 (en) 2013-08-30 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Manufacture including substrate and package structure of optical chip
JP7146589B2 (ja) * 2018-11-15 2022-10-04 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
CN112795871A (zh) * 2020-12-25 2021-05-14 至芯半导体(杭州)有限公司 一种AlN薄膜的制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04253378A (ja) * 1991-01-29 1992-09-09 Sanyo Electric Co Ltd 光起電力装置の製造方法
JP2783349B2 (ja) 1993-07-28 1998-08-06 日亜化学工業株式会社 ｎ型窒化ガリウム系化合物半導体層の電極及びその形成方法
DE69425186T3 (de) * 1993-04-28 2005-04-14 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung
WO1998019375A1 (en) * 1996-10-30 1998-05-07 Hitachi, Ltd. Optical information processor and semiconductor light emitting device suitable for the same
US6459100B1 (en) * 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
ATE452445T1 (de) * 1999-03-04 2010-01-15 Nichia Corp Nitridhalbleiterlaserelement
JP3587081B2 (ja) * 1999-05-10 2004-11-10 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子
JP2004140052A (ja) * 2002-10-16 2004-05-13 Sanyo Electric Co Ltd 電極構造およびその製造方法
JP2004214530A (ja) * 2003-01-08 2004-07-29 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型化合物半導体装置の製造方法
JP4508534B2 (ja) 2003-01-17 2010-07-21 シャープ株式会社 窒化物半導体のための電極構造及びその作製方法
JP4733371B2 (ja) 2004-08-18 2011-07-27 三菱化学株式会社 ｎ型窒化物半導体用のオーミック電極およびその製造方法
US20060124956A1 (en) * 2004-12-13 2006-06-15 Hui Peng Quasi group III-nitride substrates and methods of mass production of the same
JP4653671B2 (ja) * 2005-03-14 2011-03-16 株式会社東芝 発光装置
CN101124704A (zh) * 2005-03-16 2008-02-13 松下电器产业株式会社 氮化物半导体装置及其制造方法
KR100706952B1 (ko) * 2005-07-22 2007-04-12 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자 및 그 제조방법
US8435879B2 (en) * 2005-12-12 2013-05-07 Kyma Technologies, Inc. Method for making group III nitride articles

Also Published As

Publication number Publication date
US20120228664A1 (en) 2012-09-13
US8686442B2 (en) 2014-04-01
US20090206360A1 (en) 2009-08-20
JP2009194295A (ja) 2009-08-27

Similar Documents

Publication Publication Date Title
EP2763192B1 (en) Nitride semiconductor element and method for producing same
JP4183299B2 (ja) 窒化ガリウム系化合物半導体発光素子
US8822976B2 (en) Nitride semiconductor ultraviolet light-emitting element
US9112115B2 (en) Nitride semiconductor ultraviolet light-emitting element
US8304802B2 (en) Nitride-based semiconductor device having electrode on m-plane
JP2002016311A (ja) 窒化ガリウム系発光素子
JP7049186B2 (ja) 半導体発光素子および半導体発光素子の製造方法
JP2014241401A (ja) 半導体発光素子およびその製造方法
TW200830655A (en) Method for manufacturing semiconductor optical device
US11335830B2 (en) Photo-emission semiconductor device and method of manufacturing same
JP2010067858A (ja) 窒化物系半導体素子およびその製造方法
JP5085369B2 (ja) 窒化物半導体発光装置及びその製造方法
TWI543402B (zh) A light-emitting element, a light-emitting element, and a semiconductor device
KR101510382B1 (ko) 수직구조의 그룹 3족 질화물계 반도체 발광다이오드 소자및 제조방법
JP2009021424A (ja) 窒化物半導体発光素子及びその製造方法
JP5289791B2 (ja) 窒化物半導体発光装置及びその製造方法
CN100391013C (zh) 制造氮化镓半导体发光器件的方法
JP5132739B2 (ja) 半導体素子
JP5098135B2 (ja) 半導体レーザ素子
JP2005340860A (ja) 半導体発光素子
JP2008147294A (ja) 電子デバイス
JP5438534B2 (ja) 半導体素子及びその製造方法
JP2006128389A (ja) 窒化物半導体素子およびその製造方法
KR101171855B1 (ko) 반도체 발광소자용 지지기판 및 상기 지지기판을 이용한고성능 수직구조의 반도체 발광소자
JP2015153827A (ja) 半導体発光素子及びその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101001

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101001

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111228

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120124

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120316

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120807

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120905

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5085369

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150914

Year of fee payment: 3

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees