|
US6291840B1
(en)
|
1996-11-29 |
2001-09-18 |
Toyoda Gosei Co., Ltd. |
GaN related compound semiconductor light-emitting device
|
|
JPH10247747A
(ja)
|
1997-03-05 |
1998-09-14 |
Toshiba Corp |
半導体発光素子およびその製造方法
|
|
US6936859B1
(en)
|
1998-05-13 |
2005-08-30 |
Toyoda Gosei Co., Ltd. |
Light-emitting semiconductor device using group III nitride compound
|
|
US6262440B1
(en)
*
|
1998-06-29 |
2001-07-17 |
Philips Electronics North America Corp. |
Metal electrical contact for high current density applications in LED and laser devices
|
|
JP3469484B2
(ja)
|
1998-12-24 |
2003-11-25 |
株式会社東芝 |
半導体発光素子およびその製造方法
|
|
JP2000252230A
(ja)
*
|
1998-12-28 |
2000-09-14 |
Sanyo Electric Co Ltd |
半導体素子およびその製造方法
|
|
US6876003B1
(en)
*
|
1999-04-15 |
2005-04-05 |
Sumitomo Electric Industries, Ltd. |
Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device
|
|
US6894391B1
(en)
|
1999-04-26 |
2005-05-17 |
Sharp Kabushiki Kaisha |
Electrode structure on P-type III group nitride semiconductor layer and formation method thereof
|
|
US6803603B1
(en)
*
|
1999-06-23 |
2004-10-12 |
Kabushiki Kaisha Toshiba |
Semiconductor light-emitting element
|
|
US7211877B1
(en)
*
|
1999-09-13 |
2007-05-01 |
Vishay-Siliconix |
Chip scale surface mount package for semiconductor device and process of fabricating the same
|
|
US6812502B1
(en)
*
|
1999-11-04 |
2004-11-02 |
Uni Light Technology Incorporation |
Flip-chip light-emitting device
|
|
US7595547B1
(en)
*
|
2005-06-13 |
2009-09-29 |
Vishay-Siliconix |
Semiconductor die package including cup-shaped leadframe
|
|
US6744124B1
(en)
*
|
1999-12-10 |
2004-06-01 |
Siliconix Incorporated |
Semiconductor die package including cup-shaped leadframe
|
|
US6992334B1
(en)
*
|
1999-12-22 |
2006-01-31 |
Lumileds Lighting U.S., Llc |
Multi-layer highly reflective ohmic contacts for semiconductor devices
|
|
JP2001217456A
(ja)
*
|
2000-02-03 |
2001-08-10 |
Sharp Corp |
窒化ガリウム系化合物半導体発光素子
|
|
JP4026294B2
(ja)
*
|
2000-03-07 |
2007-12-26 |
豊田合成株式会社 |
Ｉｉｉ族窒化物系化合物半導体素子の製造方法
|
|
US6526082B1
(en)
*
|
2000-06-02 |
2003-02-25 |
Lumileds Lighting U.S., Llc |
P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction
|
|
JP4024994B2
(ja)
*
|
2000-06-30 |
2007-12-19 |
株式会社東芝 |
半導体発光素子
|
|
DE10060439A1
(de)
*
|
2000-12-05 |
2002-06-13 |
Osram Opto Semiconductors Gmbh |
Kontaktmetallisierung für GaN-basierende Halbleiterstrukturen und Verfahren zu deren Herstellung
|
|
US6608360B2
(en)
*
|
2000-12-15 |
2003-08-19 |
University Of Houston |
One-chip micro-integrated optoelectronic sensor
|
|
US6888171B2
(en)
*
|
2000-12-22 |
2005-05-03 |
Dallan Luming Science & Technology Group Co., Ltd. |
Light emitting diode
|
|
JP4148664B2
(ja)
*
|
2001-02-02 |
2008-09-10 |
三洋電機株式会社 |
窒化物系半導体レーザ素子およびその形成方法
|
|
JP5283293B2
(ja)
*
|
2001-02-21 |
2013-09-04 |
ソニー株式会社 |
半導体発光素子
|
|
JP3772098B2
(ja)
|
2001-05-15 |
2006-05-10 |
シャープ株式会社 |
窒化物系半導体発光装置
|
|
JP3912044B2
(ja)
*
|
2001-06-06 |
2007-05-09 |
豊田合成株式会社 |
Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
|
|
TW543128B
(en)
*
|
2001-07-12 |
2003-07-21 |
Highlink Technology Corp |
Surface mounted and flip chip type LED package
|
|
US6744075B2
(en)
|
2001-09-17 |
2004-06-01 |
Sanyo Electric Co., Ltd. |
Nitride-based semiconductor light-emitting device and method of forming the same
|
|
TW588204B
(en)
*
|
2002-03-14 |
2004-05-21 |
Wintek Corp |
Transparent conduction plate having low junction resistance and manufacturing method thereof
|
|
US8294172B2
(en)
*
|
2002-04-09 |
2012-10-23 |
Lg Electronics Inc. |
Method of fabricating vertical devices using a metal support film
|
|
JP2004006498A
(ja)
*
|
2002-05-31 |
2004-01-08 |
Toyoda Gosei Co Ltd |
Ｉｉｉ族窒化物系化合物半導体発光素子
|
|
US20030222263A1
(en)
*
|
2002-06-04 |
2003-12-04 |
Kopin Corporation |
High-efficiency light-emitting diodes
|
|
US6841802B2
(en)
|
2002-06-26 |
2005-01-11 |
Oriol, Inc. |
Thin film light emitting diode
|
|
JP4507532B2
(ja)
|
2002-08-27 |
2010-07-21 |
日亜化学工業株式会社 |
窒化物半導体素子
|
|
KR100543696B1
(ko)
*
|
2002-09-09 |
2006-01-20 |
삼성전기주식회사 |
고효율 발광 다이오드
|
|
TWI243488B
(en)
*
|
2003-02-26 |
2005-11-11 |
Osram Opto Semiconductors Gmbh |
Electrical contact-area for optoelectronic semiconductor-chip and its production method
|
|
JP4519423B2
(ja)
*
|
2003-05-30 |
2010-08-04 |
創世理工株式会社 |
半導体を用いた光デバイス
|
|
KR100561841B1
(ko)
*
|
2003-08-23 |
2006-03-16 |
삼성전자주식회사 |
고품위 발광다이오드 및 레이저 다이오드의 구현을 위한질화 갈륨을 포함하는 ｐ형 반도체의 오믹접촉형성을 위한투명박막전극
|
|
KR100624411B1
(ko)
*
|
2003-08-25 |
2006-09-18 |
삼성전자주식회사 |
질화물계 발광소자 및 그 제조방법
|
|
US20050070097A1
(en)
*
|
2003-09-29 |
2005-03-31 |
International Business Machines Corporation |
Atomic laminates for diffusion barrier applications
|
|
EP1548852B1
(en)
*
|
2003-12-22 |
2013-07-10 |
Samsung Electronics Co., Ltd. |
Top-emitting nitride-based light emitting device and method of manufacturing the same
|
|
KR100506741B1
(ko)
*
|
2003-12-24 |
2005-08-08 |
삼성전기주식회사 |
플립칩용 질화물 반도체 발광소자 및 그 제조방법
|
|
TWI224877B
(en)
*
|
2003-12-25 |
2004-12-01 |
Super Nova Optoelectronics Cor |
Gallium nitride series light-emitting diode structure and its manufacturing method
|
|
US7960746B2
(en)
*
|
2004-01-06 |
2011-06-14 |
Samsung Led Co., Ltd. |
Low resistance electrode and compound semiconductor light emitting device including the same
|
|
KR100586948B1
(ko)
*
|
2004-01-19 |
2006-06-07 |
삼성전기주식회사 |
질화물 반도체 발광소자 및 그 제조방법
|
|
KR100601945B1
(ko)
|
2004-03-10 |
2006-07-14 |
삼성전자주식회사 |
탑에미트형 질화물계 발광소자 및 그 제조방법
|
|
KR100634503B1
(ko)
*
|
2004-03-12 |
2006-10-16 |
삼성전자주식회사 |
질화물계 발광소자 및 그 제조방법
|
|
KR101119727B1
(ko)
*
|
2004-03-31 |
2012-03-23 |
니치아 카가쿠 고교 가부시키가이샤 |
질화물 반도체 발광 소자
|
|
KR100611491B1
(ko)
*
|
2004-08-26 |
2006-08-10 |
엘지이노텍 주식회사 |
질화물 반도체 발광소자 및 그 제조방법
|
|
US7215031B2
(en)
*
|
2004-11-10 |
2007-05-08 |
Oki Electric Industry Co., Ltd. |
Multi chip package
|
|
CN100358167C
(zh)
*
|
2004-12-17 |
2007-12-26 |
北京工业大学 |
一种GaN基LED高反电极
|
|
JP4603370B2
(ja)
*
|
2005-01-18 |
2010-12-22 |
創世理工株式会社 |
基板上に作製された半導体光デバイスおよびその作製方法
|
|
JP5089020B2
(ja)
*
|
2005-01-19 |
2012-12-05 |
創世理工株式会社 |
基板上に作製された半導体電子デバイス
|
|
WO2006109760A1
(ja)
*
|
2005-04-08 |
2006-10-19 |
Mitsubishi Cable Industries, Ltd. |
半導体素子およびその製造方法
|
|
KR100878433B1
(ko)
*
|
2005-05-18 |
2009-01-13 |
삼성전기주식회사 |
발광소자의 오믹컨택층 제조방법 및 이를 이용한발광소자의 제조방법
|
|
JP5138873B2
(ja)
|
2005-05-19 |
2013-02-06 |
日亜化学工業株式会社 |
窒化物半導体素子
|
|
JP4030556B2
(ja)
*
|
2005-06-30 |
2008-01-09 |
シャープ株式会社 |
窒化物半導体レーザ素子および窒化物半導体レーザ装置
|
|
JP5067158B2
(ja)
*
|
2005-07-08 |
2012-11-07 |
日本電気株式会社 |
電極構造、半導体素子、およびそれらの製造方法
|
|
KR101041843B1
(ko)
*
|
2005-07-30 |
2011-06-17 |
삼성엘이디 주식회사 |
질화물계 화합물 반도체 발광소자 및 그 제조방법
|
|
EP1821347B1
(en)
*
|
2006-02-16 |
2018-01-03 |
LG Electronics Inc. |
Light emitting device having vertical structure and method for manufacturing the same
|
|
KR100833489B1
(ko)
*
|
2006-02-21 |
2008-05-29 |
한국전자통신연구원 |
실리콘 나노 점을 이용한 반도체 발광 소자 및 그 제조방법
|
|
GB2446611B
(en)
*
|
2007-02-14 |
2011-08-17 |
Bookham Technology Plc |
Low creep metallization for optoelectronic applications
|
|
JP5077068B2
(ja)
*
|
2007-05-30 |
2012-11-21 |
日亜化学工業株式会社 |
窒化物半導体素子及びその製造方法
|
|
TWI341600B
(en)
*
|
2007-08-31 |
2011-05-01 |
Huga Optotech Inc |
Light optoelectronic device and forming method thereof
|
|
JP4486701B1
(ja)
|
2008-11-06 |
2010-06-23 |
パナソニック株式会社 |
窒化物系半導体素子およびその製造方法
|
|
EP2273573A4
(en)
*
|
2009-03-11 |
2012-11-14 |
Panasonic Corp |
NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
|
|
JP5502360B2
(ja)
*
|
2009-04-10 |
2014-05-28 |
スタンレー電気株式会社 |
酸化亜鉛系半導体素子及びその製造方法
|
|
JP5498723B2
(ja)
*
|
2009-04-10 |
2014-05-21 |
スタンレー電気株式会社 |
酸化亜鉛系半導体素子及びその製造方法
|
|
CN102511085A
(zh)
*
|
2009-12-25 |
2012-06-20 |
松下电器产业株式会社 |
氮化物系半导体元件及其制造方法
|
|
JP4843123B2
(ja)
|
2010-04-01 |
2011-12-21 |
パナソニック株式会社 |
窒化物系半導体素子およびその製造方法
|
|
WO2011125290A1
(ja)
*
|
2010-04-02 |
2011-10-13 |
パナソニック株式会社 |
窒化物系半導体素子およびその製造方法
|
|
JP5547279B2
(ja)
*
|
2010-04-28 |
2014-07-09 |
パナソニック株式会社 |
窒化物系半導体素子およびその製造方法
|
|
JP5685035B2
(ja)
*
|
2010-09-24 |
2015-03-18 |
住友電気工業株式会社 |
半導体発光素子の製造方法
|
|
JP5232338B2
(ja)
*
|
2011-04-08 |
2013-07-10 |
パナソニック株式会社 |
窒化物系半導体素子およびその製造方法
|
|
CN106328781B
(zh)
*
|
2016-11-03 |
2018-12-11 |
湘能华磊光电股份有限公司 |
高反射率led电极及其制备方法
|
|
JP2019134119A
(ja)
*
|
2018-02-01 |
2019-08-08 |
豊田合成株式会社 |
Ｉｉｉ族窒化物半導体発光素子
|
|
CN116682915A
(zh)
*
|
2021-02-20 |
2023-09-01 |
厦门三安光电有限公司 |
半导体发光元件及其制造方法
|