JP2006066903A5 - - Google Patents

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Publication number
JP2006066903A5
JP2006066903A5 JP2005219266A JP2005219266A JP2006066903A5 JP 2006066903 A5 JP2006066903 A5 JP 2006066903A5 JP 2005219266 A JP2005219266 A JP 2005219266A JP 2005219266 A JP2005219266 A JP 2005219266A JP 2006066903 A5 JP2006066903 A5 JP 2006066903A5
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JP
Japan
Prior art keywords
semiconductor light
positive electrode
emitting element
element according
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005219266A
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English (en)
Japanese (ja)
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JP2006066903A (ja
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Publication date
Application filed filed Critical
Priority to JP2005219266A priority Critical patent/JP2006066903A/ja
Priority claimed from JP2005219266A external-priority patent/JP2006066903A/ja
Publication of JP2006066903A publication Critical patent/JP2006066903A/ja
Publication of JP2006066903A5 publication Critical patent/JP2006066903A5/ja
Pending legal-status Critical Current

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JP2005219266A 2004-07-29 2005-07-28 半導体発光素子用正極 Pending JP2006066903A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005219266A JP2006066903A (ja) 2004-07-29 2005-07-28 半導体発光素子用正極

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004222336 2004-07-29
JP2005219266A JP2006066903A (ja) 2004-07-29 2005-07-28 半導体発光素子用正極

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP2008289155A Division JP2009033210A (ja) 2004-07-29 2008-11-11 窒化ガリウム系化合物半導体発光素子
JP2008290159A Division JP2009065196A (ja) 2004-07-29 2008-11-12 窒化ガリウム系化合物半導体発光素子
JP2008291278A Division JP2009033213A (ja) 2004-07-29 2008-11-13 窒化ガリウム系化合物半導体発光素子
JP2011000134A Division JP5533675B2 (ja) 2004-07-29 2011-01-04 半導体発光素子

Publications (2)

Publication Number Publication Date
JP2006066903A JP2006066903A (ja) 2006-03-09
JP2006066903A5 true JP2006066903A5 (enExample) 2009-01-15

Family

ID=36113043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005219266A Pending JP2006066903A (ja) 2004-07-29 2005-07-28 半導体発光素子用正極

Country Status (1)

Country Link
JP (1) JP2006066903A (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687811B2 (en) * 2006-03-21 2010-03-30 Lg Electronics Inc. Vertical light emitting device having a photonic crystal structure
US7573074B2 (en) 2006-05-19 2009-08-11 Bridgelux, Inc. LED electrode
KR100755591B1 (ko) * 2006-06-22 2007-09-06 고려대학교 산학협력단 질화물계 발광소자의 제조방법
US8212262B2 (en) * 2007-02-09 2012-07-03 Cree, Inc. Transparent LED chip
JP5040355B2 (ja) * 2007-02-24 2012-10-03 日亜化学工業株式会社 半導体発光素子及びこれを備えた発光装置
US9484499B2 (en) * 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
DE102007058723A1 (de) 2007-09-10 2009-03-12 Osram Opto Semiconductors Gmbh Lichtemittierende Struktur
DE102007057756B4 (de) * 2007-11-30 2022-03-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
WO2009113659A1 (ja) * 2008-03-13 2009-09-17 昭和電工株式会社 半導体発光素子及びその製造方法
JP5178383B2 (ja) * 2008-08-01 2013-04-10 昭和電工株式会社 半導体発光素子及び半導体発光素子の製造方法、ランプ
JP2010062425A (ja) * 2008-09-05 2010-03-18 Showa Denko Kk 半導体発光素子及び半導体発光素子の製造方法、ランプ
WO2009154191A1 (ja) * 2008-06-16 2009-12-23 昭和電工株式会社 半導体発光素子、その電極並びに製造方法及びランプ
JP5515431B2 (ja) * 2008-06-16 2014-06-11 豊田合成株式会社 半導体発光素子、その電極並びに製造方法及びランプ
CN102124574B (zh) 2008-06-16 2013-07-17 丰田合成株式会社 半导体发光元件、其电极及制造方法以及灯
JP2010153581A (ja) 2008-12-25 2010-07-08 Showa Denko Kk 半導体発光素子及び半導体発光素子の製造方法、ランプ
JP5350833B2 (ja) 2009-02-20 2013-11-27 株式会社東芝 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法
US8698188B2 (en) 2010-03-08 2014-04-15 Nichia Corporation Semiconductor light emitting device and method for producing the same
JP5095785B2 (ja) 2010-08-09 2012-12-12 株式会社東芝 半導体発光素子及びその製造方法
JP5853672B2 (ja) * 2011-12-22 2016-02-09 日亜化学工業株式会社 ＧａＮ系半導体発光素子
JP5949140B2 (ja) * 2012-05-21 2016-07-06 日亜化学工業株式会社 半導体発光素子
KR20150019820A (ko) * 2013-08-16 2015-02-25 일진엘이디(주) 나노와이어를 이용한 질화물 반도체 발광소자
CN105609609B (zh) * 2016-01-22 2018-02-16 华灿光电(苏州）有限公司 一种倒装结构的发光二极管芯片及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0368914A (ja) * 1989-08-08 1991-03-25 Sony Corp レーザディスプレイ装置
JP3318698B2 (ja) * 1994-09-30 2002-08-26 ローム株式会社 半導体発光素子
JPH10321913A (ja) * 1997-05-19 1998-12-04 Sharp Corp 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP2003163375A (ja) * 2001-11-29 2003-06-06 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
JP2004349301A (ja) * 2003-05-20 2004-12-09 Sharp Corp 発光ダイオード素子の電極及び発光ダイオード素子
JP4507594B2 (ja) * 2003-12-26 2010-07-21 日亜化学工業株式会社 半導体発光素子

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