JP2005011792A5 - - Google Patents
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- Publication number
- JP2005011792A5 JP2005011792A5 JP2003299258A JP2003299258A JP2005011792A5 JP 2005011792 A5 JP2005011792 A5 JP 2005011792A5 JP 2003299258 A JP2003299258 A JP 2003299258A JP 2003299258 A JP2003299258 A JP 2003299258A JP 2005011792 A5 JP2005011792 A5 JP 2005011792A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- emitting element
- element according
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000010410 layer Substances 0.000 claims 79
- 230000004888 barrier function Effects 0.000 claims 16
- 238000004519 manufacturing process Methods 0.000 claims 14
- 239000010949 copper Substances 0.000 claims 12
- 229910052738 indium Inorganic materials 0.000 claims 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 10
- 239000011651 chromium Substances 0.000 claims 10
- 229910052751 metal Inorganic materials 0.000 claims 10
- 238000000034 method Methods 0.000 claims 10
- 229910052709 silver Inorganic materials 0.000 claims 10
- 239000004332 silver Substances 0.000 claims 10
- 239000010936 titanium Substances 0.000 claims 10
- 239000000956 alloy Substances 0.000 claims 8
- 229910045601 alloy Inorganic materials 0.000 claims 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 7
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 6
- 229910052772 Samarium Inorganic materials 0.000 claims 6
- 229910052802 copper Inorganic materials 0.000 claims 6
- 239000011777 magnesium Substances 0.000 claims 6
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 5
- 229910052782 aluminium Inorganic materials 0.000 claims 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 5
- 229910052793 cadmium Inorganic materials 0.000 claims 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 5
- 229910052804 chromium Inorganic materials 0.000 claims 5
- 239000002184 metal Substances 0.000 claims 5
- 150000002736 metal compounds Chemical class 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 229910052719 titanium Inorganic materials 0.000 claims 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims 4
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 4
- 239000010931 gold Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 3
- 229910052749 magnesium Inorganic materials 0.000 claims 3
- 229910052750 molybdenum Inorganic materials 0.000 claims 3
- 239000011733 molybdenum Substances 0.000 claims 3
- 239000012044 organic layer Substances 0.000 claims 3
- 238000000059 patterning Methods 0.000 claims 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 2
- 229910052684 Cerium Inorganic materials 0.000 claims 2
- 229910052692 Dysprosium Inorganic materials 0.000 claims 2
- 229910052691 Erbium Inorganic materials 0.000 claims 2
- 229910052693 Europium Inorganic materials 0.000 claims 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 2
- 229910052779 Neodymium Inorganic materials 0.000 claims 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 2
- 229910006404 SnO 2 Inorganic materials 0.000 claims 2
- 229910052771 Terbium Inorganic materials 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 2
- IAQWMWUKBQPOIY-UHFFFAOYSA-N chromium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Cr+4] IAQWMWUKBQPOIY-UHFFFAOYSA-N 0.000 claims 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims 2
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 229910052706 scandium Inorganic materials 0.000 claims 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims 2
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 2
- 229910001887 tin oxide Inorganic materials 0.000 claims 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 2
- 229910052727 yttrium Inorganic materials 0.000 claims 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims 1
- 229910001195 gallium oxide Inorganic materials 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003299258A JP4362696B2 (ja) | 2003-03-26 | 2003-08-22 | 発光素子およびその製造方法、ならびに表示装置 |
| US10/805,133 US7250634B2 (en) | 2003-03-26 | 2004-03-19 | Light-emitting device, method of manufacturing the same, and display unit |
| PCT/JP2004/003949 WO2004086531A1 (en) | 2003-03-26 | 2004-03-23 | Light-emitting device, method of manufacturing the same, and display unit |
| EP04722655A EP1606848B1 (en) | 2003-03-26 | 2004-03-23 | Light-emitting device, method of manufacturing the same, and display unit |
| CN2009100067725A CN101499516B (zh) | 2003-03-26 | 2004-03-23 | 发光器件及其制造方法和显示单元 |
| KR1020047018928A KR100990871B1 (ko) | 2003-03-26 | 2004-03-23 | 발광 디바이스, 발광 디바이스 제조 방법, 및 디스플레이 유닛 |
| TW093108307A TWI268731B (en) | 2003-03-26 | 2004-03-26 | Light-emitting device, method of manufacturing the same, and display unit |
| US11/621,745 US7615792B2 (en) | 2003-03-26 | 2007-01-10 | Light-emitting device, method of manufacturing the same, and display unit |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003085868 | 2003-03-26 | ||
| JP2003153053 | 2003-05-29 | ||
| JP2003299258A JP4362696B2 (ja) | 2003-03-26 | 2003-08-22 | 発光素子およびその製造方法、ならびに表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005011792A JP2005011792A (ja) | 2005-01-13 |
| JP2005011792A5 true JP2005011792A5 (enExample) | 2005-07-21 |
| JP4362696B2 JP4362696B2 (ja) | 2009-11-11 |
Family
ID=33101959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003299258A Expired - Fee Related JP4362696B2 (ja) | 2003-03-26 | 2003-08-22 | 発光素子およびその製造方法、ならびに表示装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7250634B2 (enExample) |
| EP (1) | EP1606848B1 (enExample) |
| JP (1) | JP4362696B2 (enExample) |
| KR (1) | KR100990871B1 (enExample) |
| TW (1) | TWI268731B (enExample) |
| WO (1) | WO2004086531A1 (enExample) |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1868240B (zh) | 2003-09-19 | 2010-06-16 | 索尼株式会社 | 显示装置及其制造方法,有机发光装置及其制造方法 |
| US7550769B2 (en) * | 2004-06-11 | 2009-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element, light emitting device and semiconductor device |
| KR100615222B1 (ko) * | 2004-06-17 | 2006-08-25 | 삼성에스디아이 주식회사 | 전계 발광 디스플레이 장치 및 이의 제조 방법 |
| TWI266435B (en) * | 2004-07-08 | 2006-11-11 | Sharp Kk | Nitride-based compound semiconductor light emitting device and fabricating method thereof |
| JP4371956B2 (ja) * | 2004-09-02 | 2009-11-25 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
| KR100673744B1 (ko) | 2004-10-28 | 2007-01-24 | 삼성에스디아이 주식회사 | 다층 구조 애노드 |
| JP4592388B2 (ja) * | 2004-11-04 | 2010-12-01 | シャープ株式会社 | Ｉｉｉ−ｖ族化合物半導体発光素子およびその製造方法 |
| TW200616254A (en) * | 2004-11-12 | 2006-05-16 | Univ Nat Central | Light emitting diode structure and manufacturing method thereof |
| US7572655B2 (en) * | 2005-03-23 | 2009-08-11 | E. I. Du Pont De Nemours And Company | Electronic devices having a layer overlying an edge of a different layer and a process for forming the same |
| US7851989B2 (en) | 2005-03-25 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP4767035B2 (ja) * | 2005-04-12 | 2011-09-07 | シャープ株式会社 | 窒化物系半導体発光素子およびその製造方法 |
| JP4677822B2 (ja) * | 2005-04-22 | 2011-04-27 | セイコーエプソン株式会社 | エレクトロルミネッセンス装置、エレクトロルミネッセンス装置の製造方法、電子機器 |
| KR100729043B1 (ko) * | 2005-09-14 | 2007-06-14 | 삼성에스디아이 주식회사 | 투명 박막 트랜지스터 및 그의 제조방법 |
| KR100643376B1 (ko) * | 2005-10-24 | 2006-11-10 | 삼성전자주식회사 | 표시장치와 표시장치의 제조방법 |
| JP4823685B2 (ja) * | 2005-12-28 | 2011-11-24 | 京セラ株式会社 | Ｅｌ装置及びその製造方法 |
| JP2008091862A (ja) * | 2006-09-08 | 2008-04-17 | Sharp Corp | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
| KR100855487B1 (ko) * | 2006-09-12 | 2008-09-01 | 엘지디스플레이 주식회사 | 전계발광소자 |
| JP2008117824A (ja) * | 2006-11-01 | 2008-05-22 | Sharp Corp | 窒化物系半導体素子の製造方法 |
| KR100841368B1 (ko) * | 2006-12-13 | 2008-06-26 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 |
| US8108144B2 (en) | 2007-06-28 | 2012-01-31 | Apple Inc. | Location based tracking |
| US8290513B2 (en) | 2007-06-28 | 2012-10-16 | Apple Inc. | Location-based services |
| US8076838B2 (en) * | 2007-10-31 | 2011-12-13 | Seiko Epson Corporation | Light emitting device |
| JP2009211877A (ja) * | 2008-03-03 | 2009-09-17 | Sony Corp | 表示装置および電子機器 |
| JP4692581B2 (ja) * | 2008-06-09 | 2011-06-01 | ソニー株式会社 | 表示装置の製造方法および表示装置 |
| JP2010225572A (ja) * | 2008-11-10 | 2010-10-07 | Kobe Steel Ltd | 有機ｅｌディスプレイ用の反射アノード電極および配線膜 |
| KR101147428B1 (ko) * | 2009-02-09 | 2012-05-23 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
| JP5195593B2 (ja) * | 2009-04-01 | 2013-05-08 | セイコーエプソン株式会社 | 有機ｅｌ装置および有機ｅｌ装置の製造方法、ならびに電子機器 |
| US20110058770A1 (en) * | 2009-09-10 | 2011-03-10 | E. I. Du Pont De Nemours And Company | Sub-surface engraving of oled substrates for improved optical outcoupling |
| KR101570482B1 (ko) * | 2009-10-15 | 2015-11-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| US20120028386A1 (en) * | 2010-05-17 | 2012-02-02 | Jung In-Young | Method of manufacturing organic light emitting display |
| CN103080633A (zh) * | 2010-08-26 | 2013-05-01 | 日本电气硝子株式会社 | 波长变换元件、光源和液晶用背光单元 |
| KR20120106192A (ko) * | 2011-03-18 | 2012-09-26 | 삼성디스플레이 주식회사 | 유기 발광 장치 및 그 제조 방법 |
| JP5652373B2 (ja) * | 2011-03-24 | 2015-01-14 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子の製造方法 |
| CN104081879B (zh) | 2012-01-18 | 2017-03-01 | 株式会社日本有机雷特显示器 | 电子装置及其制造方法 |
| CN102760841B (zh) * | 2012-07-11 | 2014-11-26 | 深圳市华星光电技术有限公司 | 有机发光二极管器件及相应的显示装置 |
| KR20140085050A (ko) * | 2012-12-27 | 2014-07-07 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| JP2014137914A (ja) * | 2013-01-17 | 2014-07-28 | Japan Display Inc | 有機エレクトロルミネッセンス表示装置 |
| KR20140141755A (ko) * | 2013-05-30 | 2014-12-11 | 삼성디스플레이 주식회사 | 유기발광 표시장치 및 그의 제조방법 |
| JP6190709B2 (ja) * | 2013-12-04 | 2017-08-30 | 株式会社ジャパンディスプレイ | 有機エレクトロルミネッセンス表示装置 |
| KR102136789B1 (ko) * | 2014-06-17 | 2020-07-23 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
| KR102407674B1 (ko) * | 2014-12-22 | 2022-06-13 | 삼성디스플레이 주식회사 | 발광 표시 장치 |
| JP6746059B2 (ja) | 2015-01-14 | 2020-08-26 | バイオ−ラッド ラボラトリーズ，インコーポレイティド | 血液分析の系および方法 |
| KR102572407B1 (ko) * | 2015-07-22 | 2023-08-30 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 이를 포함하는 유기발광 표시장치 |
| JP6685142B2 (ja) | 2016-02-02 | 2020-04-22 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
| KR102651136B1 (ko) * | 2016-04-12 | 2024-03-25 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| KR102627284B1 (ko) * | 2016-05-12 | 2024-01-22 | 엘지디스플레이 주식회사 | 캐소드 전극과 보조 캐소드 전극의 접속구조 형성 방법과 그를 이용한 유기발광 다이오드 표시장치 |
| KR102521836B1 (ko) * | 2017-12-11 | 2023-04-13 | 주식회사 디비하이텍 | 애노드 셀 어레이 유닛, 이의 제조 방법 및 유기 발광 다이오드 표시 장치 |
| KR102475450B1 (ko) * | 2017-12-11 | 2022-12-08 | 주식회사 디비하이텍 | 유기 발광 다이오드 소자용 애노드 구조물, 이를 포함하는 유기 발광 다이오드 소자용 애노드 셀 어레이 유닛 및 이를 포함하는 유기 발광 다이오드 소자 |
| KR102489043B1 (ko) * | 2017-12-27 | 2023-01-16 | 엘지디스플레이 주식회사 | 유기발광 표시장치 |
| CN108470844B (zh) | 2018-03-30 | 2019-12-03 | 京东方科技集团股份有限公司 | 有机发光二极管及其制备方法、显示面板 |
| TWI676851B (zh) * | 2018-08-22 | 2019-11-11 | 隆達電子股份有限公司 | 畫素陣列封裝結構及顯示面板 |
| JP7414730B2 (ja) * | 2018-11-20 | 2024-01-16 | ソニーセミコンダクタソリューションズ株式会社 | 表示装置および表示装置の製造方法、並びに、電子機器 |
| CN112542485A (zh) * | 2019-09-23 | 2021-03-23 | 台湾积体电路制造股份有限公司 | 显示设备与其制作方法 |
| US11980046B2 (en) * | 2020-05-27 | 2024-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming an isolation structure having multiple thicknesses to mitigate damage to a display device |
| KR20220033650A (ko) * | 2020-09-09 | 2022-03-17 | 삼성디스플레이 주식회사 | 반사 전극 및 이를 포함하는 표시 장치 |
| KR102836363B1 (ko) * | 2021-04-08 | 2025-07-21 | 삼성디스플레이 주식회사 | 표시 장치 |
| KR20230073406A (ko) * | 2021-11-18 | 2023-05-26 | 삼성디스플레이 주식회사 | 표시 장치 |
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| JP3063618B2 (ja) | 1996-05-14 | 2000-07-12 | 凸版印刷株式会社 | 表示装置用電極基板 |
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2003
- 2003-08-22 JP JP2003299258A patent/JP4362696B2/ja not_active Expired - Fee Related
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2004
- 2004-03-19 US US10/805,133 patent/US7250634B2/en not_active Expired - Lifetime
- 2004-03-23 KR KR1020047018928A patent/KR100990871B1/ko not_active Expired - Fee Related
- 2004-03-23 EP EP04722655A patent/EP1606848B1/en not_active Expired - Lifetime
- 2004-03-23 WO PCT/JP2004/003949 patent/WO2004086531A1/en not_active Ceased
- 2004-03-26 TW TW093108307A patent/TWI268731B/zh not_active IP Right Cessation
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2007
- 2007-01-10 US US11/621,745 patent/US7615792B2/en not_active Expired - Fee Related
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