JP2006066903A - 半導体発光素子用正極 - Google Patents

半導体発光素子用正極 Download PDF

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Publication number
JP2006066903A
JP2006066903A JP2005219266A JP2005219266A JP2006066903A JP 2006066903 A JP2006066903 A JP 2006066903A JP 2005219266 A JP2005219266 A JP 2005219266A JP 2005219266 A JP2005219266 A JP 2005219266A JP 2006066903 A JP2006066903 A JP 2006066903A
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Japan
Prior art keywords
layer
positive electrode
semiconductor light
electrode
emitting element
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Pending
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JP2005219266A
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English (en)
Japanese (ja)
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JP2006066903A5 (enExample
Inventor
Hisayuki Miki
久幸 三木
Noritaka Muraki
典孝 村木
Munetaka Watanabe
宗隆 渡邉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
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Showa Denko KK
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Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to JP2005219266A priority Critical patent/JP2006066903A/ja
Publication of JP2006066903A publication Critical patent/JP2006066903A/ja
Publication of JP2006066903A5 publication Critical patent/JP2006066903A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Led Devices (AREA)
JP2005219266A 2004-07-29 2005-07-28 半導体発光素子用正極 Pending JP2006066903A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005219266A JP2006066903A (ja) 2004-07-29 2005-07-28 半導体発光素子用正極

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004222336 2004-07-29
JP2005219266A JP2006066903A (ja) 2004-07-29 2005-07-28 半導体発光素子用正極

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP2008289155A Division JP2009033210A (ja) 2004-07-29 2008-11-11 窒化ガリウム系化合物半導体発光素子
JP2008290159A Division JP2009065196A (ja) 2004-07-29 2008-11-12 窒化ガリウム系化合物半導体発光素子
JP2008291278A Division JP2009033213A (ja) 2004-07-29 2008-11-13 窒化ガリウム系化合物半導体発光素子
JP2011000134A Division JP5533675B2 (ja) 2004-07-29 2011-01-04 半導体発光素子

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JP2006066903A true JP2006066903A (ja) 2006-03-09
JP2006066903A5 JP2006066903A5 (enExample) 2009-01-15

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Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008004931A (ja) * 2006-06-22 2008-01-10 Samsung Electro Mech Co Ltd 前面発光型窒化物系発光素子の製造方法
JP2008199012A (ja) * 2007-02-09 2008-08-28 Cree Inc 透明ｌｅｄチップ
JP2008210900A (ja) * 2007-02-24 2008-09-11 Nichia Chem Ind Ltd 半導体発光素子及びこれを備えた発光装置
WO2009113659A1 (ja) * 2008-03-13 2009-09-17 昭和電工株式会社 半導体発光素子及びその製造方法
WO2009154191A1 (ja) * 2008-06-16 2009-12-23 昭和電工株式会社 半導体発光素子、その電極並びに製造方法及びランプ
JP2010028100A (ja) * 2008-06-16 2010-02-04 Showa Denko Kk 半導体発光素子、その電極並びに製造方法及びランプ
JP2010040654A (ja) * 2008-08-01 2010-02-18 Showa Denko Kk 半導体発光素子及び半導体発光素子の製造方法、ランプ
JP2010062425A (ja) * 2008-09-05 2010-03-18 Showa Denko Kk 半導体発光素子及び半導体発光素子の製造方法、ランプ
JP2010525574A (ja) * 2007-04-20 2010-07-22 クリー， インコーポレイティッド 担体基板を有する発光ダイオード上の透過性オーム接点
JP2010539686A (ja) * 2007-09-10 2010-12-16 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光構造
JP2011505073A (ja) * 2007-11-30 2011-02-17 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス半導体ボディおよびオプトエレクトロニクス半導体ボディの製造方法
JP2012212896A (ja) * 2006-03-21 2012-11-01 Lg Electronics Inc 垂直型発光素子
US8395263B2 (en) 2010-08-09 2013-03-12 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing the same
JP2013131700A (ja) * 2011-12-22 2013-07-04 Nichia Chem Ind Ltd ＧａＮ系半導体発光素子
US8569735B2 (en) 2008-06-16 2013-10-29 Toyoda Gosei Co., Ltd. Semiconductor light-emitting element, electrode and manufacturing method for the element, and lamp
JP2013243253A (ja) * 2012-05-21 2013-12-05 Nichia Chem Ind Ltd 半導体発光素子
US8698188B2 (en) 2010-03-08 2014-04-15 Nichia Corporation Semiconductor light emitting device and method for producing the same
WO2015023048A1 (ko) * 2013-08-16 2015-02-19 일진엘이디(주) 나노와이어를 이용한 질화물 반도체 발광소자
US8969905B2 (en) 2008-12-25 2015-03-03 Toyoda Gosei Co., Ltd. Semiconductor light emitting device and method for manufacturing semiconductor light emitting device, and lamp
US8994054B2 (en) 2009-02-20 2015-03-31 Kabushiki Kaisha Toshiba Nitride LED with a schottky electrode penetrating a transparent electrode
US9099613B2 (en) 2006-05-19 2015-08-04 Bridgelux, Inc. LEDs with efficient electrode structures
CN105609609A (zh) * 2016-01-22 2016-05-25 华灿光电(苏州）有限公司 一种倒装结构的发光二极管芯片及其制备方法

Citations (6)

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JPH0368914A (ja) * 1989-08-08 1991-03-25 Sony Corp レーザディスプレイ装置
JPH08102550A (ja) * 1994-09-30 1996-04-16 Rohm Co Ltd 半導体発光素子
JPH10321913A (ja) * 1997-05-19 1998-12-04 Sharp Corp 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP2003163375A (ja) * 2001-11-29 2003-06-06 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
JP2004349301A (ja) * 2003-05-20 2004-12-09 Sharp Corp 発光ダイオード素子の電極及び発光ダイオード素子
JP2005191326A (ja) * 2003-12-26 2005-07-14 Nichia Chem Ind Ltd 半導体発光素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0368914A (ja) * 1989-08-08 1991-03-25 Sony Corp レーザディスプレイ装置
JPH08102550A (ja) * 1994-09-30 1996-04-16 Rohm Co Ltd 半導体発光素子
JPH10321913A (ja) * 1997-05-19 1998-12-04 Sharp Corp 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP2003163375A (ja) * 2001-11-29 2003-06-06 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
JP2004349301A (ja) * 2003-05-20 2004-12-09 Sharp Corp 発光ダイオード素子の電極及び発光ダイオード素子
JP2005191326A (ja) * 2003-12-26 2005-07-14 Nichia Chem Ind Ltd 半導体発光素子

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012212896A (ja) * 2006-03-21 2012-11-01 Lg Electronics Inc 垂直型発光素子
US10741726B2 (en) 2006-05-19 2020-08-11 Bridgelux Inc. LEDs with efficient electrode structures
US10199543B2 (en) 2006-05-19 2019-02-05 Bridgelux, Inc. LEDs with efficient electrode structures
US9627589B2 (en) 2006-05-19 2017-04-18 Bridgelux, Inc. LEDs with efficient electrode structures
US9356194B2 (en) 2006-05-19 2016-05-31 Bridgelux, Inc. LEDs with efficient electrode structures
US9105815B2 (en) 2006-05-19 2015-08-11 Bridgelux, Inc. LEDs with efficient electrode structures
US9099613B2 (en) 2006-05-19 2015-08-04 Bridgelux, Inc. LEDs with efficient electrode structures
US8227283B2 (en) 2006-06-22 2012-07-24 Samsung Led Co., Ltd. Top-emitting N-based light emitting device and method of manufacturing the same
JP2008004931A (ja) * 2006-06-22 2008-01-10 Samsung Electro Mech Co Ltd 前面発光型窒化物系発光素子の製造方法
JP2008199012A (ja) * 2007-02-09 2008-08-28 Cree Inc 透明ｌｅｄチップ
JP2008210900A (ja) * 2007-02-24 2008-09-11 Nichia Chem Ind Ltd 半導体発光素子及びこれを備えた発光装置
JP2010525574A (ja) * 2007-04-20 2010-07-22 クリー， インコーポレイティッド 担体基板を有する発光ダイオード上の透過性オーム接点
US9484499B2 (en) 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
JP2010539686A (ja) * 2007-09-10 2010-12-16 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光構造
US8390004B2 (en) 2007-09-10 2013-03-05 Osram Opto Semiconductors Gmbh Light-emitting structure
JP2011505073A (ja) * 2007-11-30 2011-02-17 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス半導体ボディおよびオプトエレクトロニクス半導体ボディの製造方法
WO2009113659A1 (ja) * 2008-03-13 2009-09-17 昭和電工株式会社 半導体発光素子及びその製造方法
JP5522032B2 (ja) * 2008-03-13 2014-06-18 豊田合成株式会社 半導体発光素子及びその製造方法
WO2009154191A1 (ja) * 2008-06-16 2009-12-23 昭和電工株式会社 半導体発光素子、その電極並びに製造方法及びランプ
US8569735B2 (en) 2008-06-16 2013-10-29 Toyoda Gosei Co., Ltd. Semiconductor light-emitting element, electrode and manufacturing method for the element, and lamp
JP2010028100A (ja) * 2008-06-16 2010-02-04 Showa Denko Kk 半導体発光素子、その電極並びに製造方法及びランプ
JP2010040654A (ja) * 2008-08-01 2010-02-18 Showa Denko Kk 半導体発光素子及び半導体発光素子の製造方法、ランプ
JP2010062425A (ja) * 2008-09-05 2010-03-18 Showa Denko Kk 半導体発光素子及び半導体発光素子の製造方法、ランプ
US8969905B2 (en) 2008-12-25 2015-03-03 Toyoda Gosei Co., Ltd. Semiconductor light emitting device and method for manufacturing semiconductor light emitting device, and lamp
US8994054B2 (en) 2009-02-20 2015-03-31 Kabushiki Kaisha Toshiba Nitride LED with a schottky electrode penetrating a transparent electrode
US8698188B2 (en) 2010-03-08 2014-04-15 Nichia Corporation Semiconductor light emitting device and method for producing the same
US8890195B2 (en) 2010-08-09 2014-11-18 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing the same
US8395263B2 (en) 2010-08-09 2013-03-12 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing the same
JP2013131700A (ja) * 2011-12-22 2013-07-04 Nichia Chem Ind Ltd ＧａＮ系半導体発光素子
JP2013243253A (ja) * 2012-05-21 2013-12-05 Nichia Chem Ind Ltd 半導体発光素子
WO2015023048A1 (ko) * 2013-08-16 2015-02-19 일진엘이디(주) 나노와이어를 이용한 질화물 반도체 발광소자
CN105609609A (zh) * 2016-01-22 2016-05-25 华灿光电(苏州）有限公司 一种倒装结构的发光二极管芯片及其制备方法

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