JP2012212896A - 垂直型発光素子 - Google Patents
垂直型発光素子 Download PDFInfo
- Publication number
- JP2012212896A JP2012212896A JP2012127702A JP2012127702A JP2012212896A JP 2012212896 A JP2012212896 A JP 2012212896A JP 2012127702 A JP2012127702 A JP 2012127702A JP 2012127702 A JP2012127702 A JP 2012127702A JP 2012212896 A JP2012212896 A JP 2012212896A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- emitting device
- electrode
- photonic crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 56
- 239000003989 dielectric material Substances 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 56
- 239000004038 photonic crystal Substances 0.000 claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 97
- 229910002601 GaN Inorganic materials 0.000 description 96
- 239000010409 thin film Substances 0.000 description 44
- 238000000034 method Methods 0.000 description 42
- 229910052594 sapphire Inorganic materials 0.000 description 20
- 239000010980 sapphire Substances 0.000 description 20
- 238000005530 etching Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000011982 device technology Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- -1 Gallium nitride compound Chemical class 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】支持層70と、支持層上に位置する第1電極と、第1電極上に位置する複数の半導体層であって、第1電極上に位置するp型GaN層43と、p型GaN層上に位置する発光層42と、発光層上に位置するn型GaN層41と、を含む複数の半導体層と、n型GaN層上に位置し、周期的に配列された複数のホールによって形成される光結晶層と、光結晶層上に位置する第2電極と、を備える、垂直型発光素子。
【選択図】図9
Description
以下、添付図面に基づき、本発明の第1実施例について詳細に説明する。
次に、添付図面を参照して、本発明の第2実施例について詳細に説明する。
一方、第3実施例として、図13に示すように、基板100上に通常の半導体薄膜成長装置を用いてGaN半導体薄膜110を成長させ、このGaN薄膜110上に上記の誘電物質柱200を形成することができる。
Claims (17)
- 支持層と、
前記支持層上に位置する第1電極と、
前記第1電極上に位置する複数の半導体層であって、前記第1電極上に位置するp型GaN層と、前記p型GaN層上に位置する発光層と、前記発光層上に位置するn型GaN層と、を含む複数の半導体層と、
前記n型GaN層上に位置し、周期的に配列された複数のホールによって形成される光結晶層と、
前記光結晶層上に位置する第2電極と、
を備える、垂直型発光素子。 - 前記光結晶層と第2電極との間に、透明オーミック層をさらに備えることを特徴とする請求項1に記載の垂直型発光素子。
- 前記透明オーミック層と第2電極との間に、反射層をさらに備えることを特徴とする、請求項2に記載の垂直型発光素子。
- 前記第1電極と前記p型GaN層との間に、オーミック形成層をさらに備えることを特徴とする、請求項1乃至3のいずれかに記載の垂直型発光素子。
- 前記オーミック形成層は、n型GaN層であることを特徴とする、請求項4に記載の垂直型発光素子。
- 前記支持層と第1電極との間には反射電極をさらに備えることを特徴とする、請求項1乃至5のいずれかに記載の垂直型発光素子。
- 前記支持層が金属板である場合、前記支持層と前記反射電極との間に、シードメタルをさらに備えることを特徴とする、請求項6に記載の垂直型発光素子。
- 前記支持層が金属板である場合、前記支持層と前記第1電極との間に、シードメタルをさらに備えることを特徴とする、請求項1乃至6のいずれかに記載の垂直型発光素子。
- 前記光結晶層のうち少なくとも前記第2電極が形成される部分において、前記複数のホール内に誘電物質が充填されていることを特徴とする、請求項1乃至8のいずれかに記載の垂直型発光素子。
- 前記誘電物質は、シリコン酸化物、シリコン窒化物のうちのいずれか一つであることを特徴とする、請求項9に記載の垂直型発光素子。
- 前記光結晶層の複数のホールの周期は、放出される光の波長の半分であることを特徴とする、請求項1乃至10のいずれかに記載の垂直型発光素子。
- 前記光結晶層は、前記ホールの深さが0.05乃至10μmであることを特徴とする請求項1乃至11のいずれかに記載の垂直型発光素子。
- 前記光結晶層は、前記ホールの半径が0.01乃至6μmであるであることを特徴とする、請求項1乃至12のいずれかに記載の垂直型発光素子。
- 前記光結晶層は、前記複数のホールが配置される周期が0.03乃至18μmであることを特徴とする、請求項1乃至13のいずれかに記載の垂直型発光素子。
- 前記支持層は、Cu、Au、Niのうちの一つまたはこれらの合金からなる金属を含む金属板、または半導体基板であることを特徴とする、請求項1乃至14のいずれかに記載の垂直型発光素子。
- 前記第2電極は、ITO、ZnO、AlZnO、及びInZnOのうちの少なくともいずれか一つで形成されることを特徴とする、請求項1乃至15のいずれかに記載の垂直型発光素子。
- 前記ホールは、円形、多角形、または六角形の形状であることを特徴とする、請求項1乃至16のいずれかに記載の垂直型発光素子。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060025692A KR100734375B1 (ko) | 2006-03-21 | 2006-03-21 | 수직형 발광 소자 및 그 제조방법 |
KR10-2006-0025692 | 2006-03-21 | ||
KR10-2006-0025691 | 2006-03-21 | ||
KR1020060025691A KR100734374B1 (ko) | 2006-03-21 | 2006-03-21 | 수직형 발광 소자 및 그 제조방법 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007054043A Division JP5237570B2 (ja) | 2006-03-21 | 2007-03-05 | 垂直型発光素子製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012212896A true JP2012212896A (ja) | 2012-11-01 |
JP5475833B2 JP5475833B2 (ja) | 2014-04-16 |
Family
ID=38532402
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007054043A Active JP5237570B2 (ja) | 2006-03-21 | 2007-03-05 | 垂直型発光素子製造方法 |
JP2012127702A Active JP5475833B2 (ja) | 2006-03-21 | 2012-06-05 | 垂直型発光素子 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007054043A Active JP5237570B2 (ja) | 2006-03-21 | 2007-03-05 | 垂直型発光素子製造方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US7687811B2 (ja) |
JP (2) | JP5237570B2 (ja) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090026486A1 (en) * | 2007-07-26 | 2009-01-29 | Sharp Kabushiki Kaisha | Nitride based compound semiconductor light emitting device and method of manufacturing the same |
US8378567B2 (en) * | 2007-11-21 | 2013-02-19 | Industrial Technology Research Institute | Light-polarizing structure |
US20090140279A1 (en) * | 2007-12-03 | 2009-06-04 | Goldeneye, Inc. | Substrate-free light emitting diode chip |
KR101499952B1 (ko) * | 2008-02-20 | 2015-03-06 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
US7781780B2 (en) * | 2008-03-31 | 2010-08-24 | Bridgelux, Inc. | Light emitting diodes with smooth surface for reflective electrode |
KR20100030472A (ko) * | 2008-09-10 | 2010-03-18 | 삼성전자주식회사 | 발광 소자 및 발광 장치의 제조 방법, 상기 방법을 이용하여 제조한 발광 소자 및 발광 장치 |
KR101040462B1 (ko) * | 2008-12-04 | 2011-06-09 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
TWI473246B (zh) * | 2008-12-30 | 2015-02-11 | Epistar Corp | 發光二極體晶粒等級封裝 |
KR100969126B1 (ko) | 2009-03-10 | 2010-07-09 | 엘지이노텍 주식회사 | 발광 소자 |
KR20110043282A (ko) * | 2009-10-21 | 2011-04-27 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
US8538224B2 (en) | 2010-04-22 | 2013-09-17 | 3M Innovative Properties Company | OLED light extraction films having internal nanostructures and external microstructures |
EP2381488A1 (en) * | 2010-04-22 | 2011-10-26 | Imec | Method of manufacturing a light emitting diode |
US8217488B2 (en) * | 2010-07-19 | 2012-07-10 | Walsin Lihwa Corporation | GaN light emitting diode and method for increasing light extraction on GaN light emitting diode via sapphire shaping |
US8536594B2 (en) | 2011-01-28 | 2013-09-17 | Micron Technology, Inc. | Solid state lighting devices with reduced dimensions and methods of manufacturing |
US8816379B2 (en) | 2012-05-17 | 2014-08-26 | High Power Opto, Inc. | Reflection curved mirror structure of a vertical light-emitting diode |
US8546831B1 (en) * | 2012-05-17 | 2013-10-01 | High Power Opto Inc. | Reflection convex mirror structure of a vertical light-emitting diode |
US8748928B2 (en) | 2012-05-17 | 2014-06-10 | High Power Opto, Inc. | Continuous reflection curved mirror structure of a vertical light-emitting diode |
KR20140032691A (ko) * | 2012-09-07 | 2014-03-17 | 일진엘이디(주) | 발광 소자 및 그 제조 방법 |
KR101715843B1 (ko) * | 2012-12-14 | 2017-03-14 | 삼성전자주식회사 | 광추출 효율이 향상된 발광 소자 |
CN105283968A (zh) * | 2013-07-17 | 2016-01-27 | 丸文株式会社 | 半导体发光元件及其制造方法 |
CN105934833B (zh) | 2014-03-06 | 2017-09-15 | 丸文株式会社 | 深紫外led及其制造方法 |
JP5999800B1 (ja) | 2015-01-16 | 2016-09-28 | 丸文株式会社 | 深紫外led及びその製造方法 |
KR102357585B1 (ko) * | 2015-08-18 | 2022-02-04 | 삼성전자주식회사 | 반도체 자외선 발광소자 |
JP6230038B2 (ja) | 2015-09-03 | 2017-11-15 | 丸文株式会社 | 深紫外led及びその製造方法 |
KR101811819B1 (ko) | 2016-03-30 | 2017-12-22 | 마루분 가부시키가이샤 | 심자외 led 및 그 제조 방법 |
CN107887487B (zh) * | 2017-10-27 | 2020-04-10 | 扬州乾照光电有限公司 | 一种发光二极管及其制造方法 |
CN107978628B (zh) * | 2017-11-14 | 2020-11-06 | 厦门市三安集成电路有限公司 | 一种覆盖纳米柱势垒的GaN晶体管及其制备方法 |
JP7316610B6 (ja) | 2018-01-26 | 2024-02-19 | 丸文株式会社 | 深紫外led及びその製造方法 |
US11418008B2 (en) * | 2019-03-20 | 2022-08-16 | Electronics And Telecommunications Research Institute | Laser device |
JP2021057442A (ja) * | 2019-09-30 | 2021-04-08 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
JP7027500B1 (ja) | 2020-09-10 | 2022-03-01 | 昭和アルミニウム缶株式会社 | 合金板材供給装置および缶成形装置 |
CN112038459A (zh) * | 2020-09-14 | 2020-12-04 | 扬州乾照光电有限公司 | 一种光子晶体led结构及制作方法 |
CN112750924A (zh) * | 2020-12-31 | 2021-05-04 | 北京中科优唯科技有限公司 | 具有自体光子晶体结构的紫外发光二极管芯片的制备方法 |
CN115466939A (zh) * | 2022-10-10 | 2022-12-13 | 中国科学院上海微系统与信息技术研究所 | 一种光调制化学气相沉积装置以及利用其调制薄膜生长温度的方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003318443A (ja) * | 2002-04-23 | 2003-11-07 | Sharp Corp | 窒化物系半導体発光素子およびその製造方法 |
JP2004289096A (ja) * | 2003-03-19 | 2004-10-14 | Lumileds Lighting Us Llc | フォトニック結晶構造を使用するled効率の改良 |
JP2005268601A (ja) * | 2004-03-19 | 2005-09-29 | Sumitomo Chemical Co Ltd | 化合物半導体発光素子 |
WO2005098974A1 (en) * | 2004-04-07 | 2005-10-20 | Tinggi Technologies Private Limited | Fabrication of reflective layer on semiconductor light emitting diodes |
WO2006006555A1 (ja) * | 2004-07-12 | 2006-01-19 | Rohm Co., Ltd. | 半導体発光素子 |
JP2006049855A (ja) * | 2004-06-28 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
JP2006054473A (ja) * | 2004-08-04 | 2006-02-23 | Lumileds Lighting Us Llc | 複数の格子を有するフォトニック結晶発光装置 |
JP2006066903A (ja) * | 2004-07-29 | 2006-03-09 | Showa Denko Kk | 半導体発光素子用正極 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3259811B2 (ja) * | 1995-06-15 | 2002-02-25 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法及び窒化物半導体素子 |
JP3525061B2 (ja) * | 1998-09-25 | 2004-05-10 | 株式会社東芝 | 半導体発光素子の製造方法 |
US7109048B2 (en) * | 2003-09-30 | 2006-09-19 | Lg Electronics Inc. | Semiconductor light emitting device and fabrication method thereof |
KR20050041536A (ko) * | 2003-10-31 | 2005-05-04 | 엘지이노텍 주식회사 | 발광소자 |
US20050152417A1 (en) * | 2004-01-08 | 2005-07-14 | Chung-Hsiang Lin | Light emitting device with an omnidirectional photonic crystal |
US20050173714A1 (en) * | 2004-02-06 | 2005-08-11 | Ho-Shang Lee | Lighting system with high and improved extraction efficiency |
US20050205883A1 (en) * | 2004-03-19 | 2005-09-22 | Wierer Jonathan J Jr | Photonic crystal light emitting device |
US7161188B2 (en) * | 2004-06-28 | 2007-01-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
JP4371956B2 (ja) * | 2004-09-02 | 2009-11-25 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
US7563625B2 (en) * | 2005-01-11 | 2009-07-21 | SemiLEDs Optoelectronics Co., Ltd. | Method of making light-emitting diodes (LEDs) with improved light extraction by roughening |
-
2007
- 2007-02-09 US US11/704,390 patent/US7687811B2/en active Active
- 2007-03-05 JP JP2007054043A patent/JP5237570B2/ja active Active
-
2010
- 2010-03-16 US US12/725,258 patent/US8368087B2/en active Active
-
2012
- 2012-06-05 JP JP2012127702A patent/JP5475833B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003318443A (ja) * | 2002-04-23 | 2003-11-07 | Sharp Corp | 窒化物系半導体発光素子およびその製造方法 |
JP2004289096A (ja) * | 2003-03-19 | 2004-10-14 | Lumileds Lighting Us Llc | フォトニック結晶構造を使用するled効率の改良 |
JP2005268601A (ja) * | 2004-03-19 | 2005-09-29 | Sumitomo Chemical Co Ltd | 化合物半導体発光素子 |
WO2005098974A1 (en) * | 2004-04-07 | 2005-10-20 | Tinggi Technologies Private Limited | Fabrication of reflective layer on semiconductor light emitting diodes |
JP2006049855A (ja) * | 2004-06-28 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
WO2006006555A1 (ja) * | 2004-07-12 | 2006-01-19 | Rohm Co., Ltd. | 半導体発光素子 |
JP2006066903A (ja) * | 2004-07-29 | 2006-03-09 | Showa Denko Kk | 半導体発光素子用正極 |
JP2006054473A (ja) * | 2004-08-04 | 2006-02-23 | Lumileds Lighting Us Llc | 複数の格子を有するフォトニック結晶発光装置 |
Also Published As
Publication number | Publication date |
---|---|
US7687811B2 (en) | 2010-03-30 |
US20100187554A1 (en) | 2010-07-29 |
US8368087B2 (en) | 2013-02-05 |
US20070221907A1 (en) | 2007-09-27 |
JP5237570B2 (ja) | 2013-07-17 |
JP5475833B2 (ja) | 2014-04-16 |
JP2007258700A (ja) | 2007-10-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5475833B2 (ja) | 垂直型発光素子 | |
KR101646664B1 (ko) | 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지 | |
KR20110128545A (ko) | 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지 | |
US20130193448A1 (en) | Patterned substrate and stacked light emitting diode | |
TWI493747B (zh) | 發光二極體及其形成方法 | |
JP2013034010A (ja) | 縦型発光素子 | |
KR101262854B1 (ko) | 질화물계 발광 소자 | |
KR100774198B1 (ko) | 수직형 발광 소자 | |
US20180108810A1 (en) | Flip-chip Light Emitting Diode and Fabrication Method | |
JP5638543B2 (ja) | 発光素子の製造方法 | |
KR100762003B1 (ko) | 수직구조 질화물계 발광다이오드 소자의 제조방법 | |
KR20090076163A (ko) | 질화물 반도체 발광소자 제조방법 및 이에 의해 제조된질화물 반도체 발광소자 | |
JP5165668B2 (ja) | 半導体発光素子及びその製造方法 | |
TWI437731B (zh) | 一種具有提升光取出率之半導體光電元件及其製造方法 | |
KR20110117963A (ko) | 질화물 반도체 발광 소자 및 그 제조방법 | |
JP2006210961A (ja) | 窒化ガリウム系化合物半導体発光素子 | |
KR100734374B1 (ko) | 수직형 발광 소자 및 그 제조방법 | |
KR20110041683A (ko) | 반도체 발광소자 및 이를 제조하는 방법 | |
US8319227B2 (en) | Light emitting device | |
KR101241331B1 (ko) | 질화물계 발광 소자 및 그 제조방법 | |
KR100734375B1 (ko) | 수직형 발광 소자 및 그 제조방법 | |
KR100808197B1 (ko) | 수직형 발광 소자 및 그 제조방법 | |
KR100730752B1 (ko) | 초격자층을 갖는 화합물 반도체, 이를 이용한 발광 다이오드 및 이의 제조 방법 | |
KR101252558B1 (ko) | 수직형 발광 소자의 제조방법 | |
KR20100054594A (ko) | 질화물 반도체 발광소자 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130625 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130626 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20130705 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130925 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131008 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20131018 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20131118 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140106 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140128 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140206 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5475833 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |