JP5095785B2 - 半導体発光素子及びその製造方法 - Google Patents
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Description
なお、図面は模式的または概念的なものであり、各部分の厚みと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。また、同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
なお、本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
図1(a)及び図1(b)は、第1の実施形態に係る半導体発光素子の構成を例示する模式図である。
すなわち、図1(b)は模式的平面図であり、図1(a)は図1(b)のA1−A2線断面図である。
ここで、本願明細書において、「積層」とは、互いに接して重ねられる場合の他に、間に他の層が挿入されて重ねられる場合も含む。
本実施形態に係る半導体発光素子110によれば、高いボンディング性と高い効率とを有する半導体発光素子が提供できる。
すなわち、実施形態によれば、電流の均一化によって発光効率を向上しつつ、光吸収を抑制し、高いボンディング性を確保する。
図2(a)〜図2(e)は、第1の実施形態に係る半導体発光素子の製造方法を例示する工程順模式的断面図である。
図2(a)に表したように、例えば、サファイアからなる基板5の主面上に、バッファ層6を形成した後、第1半導体層10として、n形不純物がドープされたn形GaN層の結晶を成長させる。
これにより、図2(a)に例示する積層構造体10sが形成される。
このようにして、実施形態に係る半導体発光素子110が得られる。
すなわち、図1(b)に表したように、延在部53pの延在方向に対して垂直で第1主面51aに対して平行な方向に沿った幅w3は、第2導電層52の第1主面51aに対して平行な方向に沿った幅w2よりも狭い。すなわち、延在部53pは、細線である。これにより、遮光性の第3導電層53の面積を小さくしたまま、第2導電層52と第1導電層51との間に効率的に電流を流すことができる。これにより、光取り出し効率の低下を抑制しつつ高い発光効率が得られる。
図3(a)に表したように、実施形態に係る半導体発光素子111の第3導電層53においては、延在部53pが3つの部分(第1部分53a、第2部分53b及び第3部分53c)を有する。第1部分53aは、第2導電層52から第1電極40に向かうX軸方向に沿って延在する。第2部分53bは、第2導電層52からY軸方向の正の方向に延在した後にX軸方向に沿って第1電極40に向かう方向に延在する。第3部分53cは、第2導電層52からY軸方向の負の方向に延在した後にX軸方向に沿って第1電極40に向かう方向に延在する。このように、延在部53pは複数の部分を含むことができる。
図4(a)に表したように、実施形態に係る半導体発光素子114の第3導電層53においては、延在部53pが2つの部分(第2部分53b及び第3部分53c)を有する。第2部分53bは、第2導電層52からY軸方向の正の方向に延在した後にX軸方向に沿って第1電極40に向かう方向に延在する。第3部分53cは、第2導電層52からY軸方向の負の方向に延在した後にX軸方向に沿って第1電極40に向かう方向に延在する。
このように、実施形態に係る半導体発光素子は種々の変形が可能である。
図5に表したように、実施形態に係る別の半導体発光素子120においては、第3導電層53と第2導電層52とが互いに接していない。例えば、第1導電層51のシート抵抗が比較的低く、第3導電層53と第2導電層52との間隔が比較的短い場合には、第3導電層53と第2導電層52とが互いに接していなくても良い。すなわち、第2導電層52は第1導電層51に接しており、第3導電層53が第1導電層51に接していれば良い。この場合にも、高いボンディング性と高い効率とが得られる。
図6(a)は、図2(a)に関して説明した工程の後の工程に対応する。
第1導電層51を形成した後に、図6(a)に表したように、積層構造体10sを加工し、第1半導体層10を露出させ、露出した第1半導体層10の上、及び、第1導電層51の上に、Al膜を形成する。そして、このAlを所定の形状に加工する。このAl膜が、第3n側導電膜43及び第3導電層53となる。
これにより、本実施形態に係る半導体発光素子が得られる。
第2の実施形態は、半導体発光素子の製造方法である。
すなわち、本製造方法は、窒化物半導体を含む第1導電形の第1半導体層10と、窒化物半導体を含む第2導電形の第2半導体層20と、第1半導体層10と第2半導体層20との間に設けられ、窒化物半導体層を含む発光層30と、を含む積層構造体10sであって、積層構造体10sの第2半導体層20の側の第2主面10aに第1半導体層10の一部が露出している積層構造体10sと、第2主面10aの側において第1半導体層10に接する第1電極40と、第2主面10aの側において第2半導体層20に接し、第1導電層51、第2導電層52及び第3導電層53を含む第2電極50と、を有する半導体発光素子の製造方法である。
図7に表したように、本製造方法においては、第2半導体層20の上に、発光層30から放出される発光光に対して透過性を有する第1導電層51を形成する(ステップS110)。例えば、図2(a)に関して説明した処理を行う。
Claims (6)
- 窒化物半導体を含む第1導電形の第1半導体層と、窒化物半導体を含む第2導電形の第2半導体層と、前記第1半導体層と前記第2半導体層との間に設けられ窒化物半導体層を含む発光層と、を含む積層構造体と、
前記第2半導体層の前記第1半導体層とは反対の側に設けられ、前記発光層から放出される発光光に対して透過性を有する第1導電層と、
前記第1導電層の前記第2半導体層とは反対の側の第1主面に接する第2導電層と、
前記第1主面に接し、前記発光光に対する前記第2導電層の反射率よりも高い反射率を有する反射性の第3導電層であって、その少なくとも一部が前記第2導電層に覆われず前記第1主面に対して平行に延在する延在部を含み、アルミニウム、銀及びロジウムの少なくともいずれかを含む第3導電層と、
を備え、
前記延在部の、延在方向に対して垂直で前記第1主面に対して平行な方向に沿った幅は、1マイクロメートル以上50マイクロメートル以下であり、
前記第2導電層の前記第1主面に対して平行な方向に沿った幅は、30マイクロメートル以上80マイクロメートル以下であり、
前記第2導電層の前記第1導電層に対する密着力は、前記第3導電層の前記第1導電層に対する密着力よりも大きく、
前記第1導電層の厚さは、100ナノメートル以上250ナノメートル以下で、一様であることを特徴とする半導体発光素子。 - 前記積層構造体の前記第2半導体層の側の第2主面の側において前記第1半導体層に接する第1電極をさらに備え、
前記延在部は、前記第1電極との距離が、前記第2導電層と前記第1電極との距離よりも短い部分を有することを特徴とする請求項1記載の半導体発光素子。 - 前記延在部の、延在方向に対して垂直で前記第1主面に対して平行な方向に沿った幅は、前記第2導電層の前記第1主面に対して平行な方向に沿った幅よりも狭いことを特徴とする請求項1または2に記載の半導体発光素子。
- 前記第2導電層は、前記第1導電層に接し、ニッケル、チタン及びバナジウムの少なくともいずれかを含む層を含むことを特徴とする請求項1〜3のいずれか1つに記載の半導体発光素子。
- 前記第1導電層は、In、Sn、Zn及びTiよりなる群から選ばれた少なくとも1つの元素を含む酸化物を含むことを特徴とする請求項1〜4のいずれか1つに記載の半導体発光素子。
- 前記積層構造体の前記第2半導体層の側の第2主面の側において、前記第1半導体層上に設けられ、前記第3導電層に用いられる材料を含む層を含む第1電極をさらに備えたことを特徴とする請求項1〜5のいずれか1つに記載の半導体発光素子。
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JP2010178405A JP5095785B2 (ja) | 2010-08-09 | 2010-08-09 | 半導体発光素子及びその製造方法 |
US13/029,462 US8395263B2 (en) | 2010-08-09 | 2011-02-17 | Semiconductor light emitting device and method for manufacturing the same |
EP11157652A EP2418698A3 (en) | 2010-08-09 | 2011-03-10 | Semiconductor light emitting device and method for manufacturing the same |
US13/747,638 US8890195B2 (en) | 2010-08-09 | 2013-01-23 | Semiconductor light emitting device and method for manufacturing the same |
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KR101179606B1 (ko) * | 2011-03-03 | 2012-09-05 | 주식회사 세미콘라이트 | 반도체 발광소자 |
US9847372B2 (en) * | 2011-12-01 | 2017-12-19 | Micron Technology, Inc. | Solid state transducer devices with separately controlled regions, and associated systems and methods |
JP2013258329A (ja) * | 2012-06-13 | 2013-12-26 | Toyoda Gosei Co Ltd | Iii族窒化物半導体発光素子とその製造方法 |
US20140217355A1 (en) * | 2013-02-05 | 2014-08-07 | Rensselaer Polytechnic Institute | Semiconductor light emitting device |
JP6118575B2 (ja) * | 2013-02-12 | 2017-04-19 | 日亜化学工業株式会社 | 発光装置 |
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JP2006303542A (ja) * | 1998-12-28 | 2006-11-02 | Sanyo Electric Co Ltd | 半導体素子およびその製造方法 |
TW497277B (en) * | 2000-03-10 | 2002-08-01 | Toshiba Corp | Semiconductor light emitting device and method for manufacturing the same |
JP4810746B2 (ja) | 2000-03-31 | 2011-11-09 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子 |
JP2004349301A (ja) | 2003-05-20 | 2004-12-09 | Sharp Corp | 発光ダイオード素子の電極及び発光ダイオード素子 |
KR100593886B1 (ko) | 2003-06-24 | 2006-07-03 | 삼성전기주식회사 | 질화갈륨계 반도체 발광소자의 제조방법 |
JP4604488B2 (ja) | 2003-12-26 | 2011-01-05 | 日亜化学工業株式会社 | 窒化物半導体発光素子およびその製造方法 |
CN1993835A (zh) * | 2004-06-14 | 2007-07-04 | 三菱电线工业株式会社 | 氮化物半导体发光器件 |
JP2006066903A (ja) | 2004-07-29 | 2006-03-09 | Showa Denko Kk | 半導体発光素子用正極 |
JP4899825B2 (ja) * | 2006-11-28 | 2012-03-21 | 日亜化学工業株式会社 | 半導体発光素子、発光装置 |
JP5092419B2 (ja) * | 2007-01-24 | 2012-12-05 | 三菱化学株式会社 | GaN系発光ダイオード素子 |
JP5130730B2 (ja) | 2007-02-01 | 2013-01-30 | 日亜化学工業株式会社 | 半導体発光素子 |
CN102779918B (zh) | 2007-02-01 | 2015-09-02 | 日亚化学工业株式会社 | 半导体发光元件 |
JP5251038B2 (ja) * | 2007-08-23 | 2013-07-31 | 豊田合成株式会社 | 発光装置 |
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JP2009177008A (ja) | 2008-01-25 | 2009-08-06 | Toshiba Discrete Technology Kk | 発光素子及びその製造方法、発光装置 |
WO2009102032A1 (ja) * | 2008-02-15 | 2009-08-20 | Mitsubishi Chemical Corporation | GaN系LED素子およびその製造方法 |
TWI493748B (zh) | 2008-08-29 | 2015-07-21 | Nichia Corp | Semiconductor light emitting elements and semiconductor light emitting devices |
JP5350833B2 (ja) | 2009-02-20 | 2013-11-27 | 株式会社東芝 | 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法 |
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