WO2009091194A3 - 발광장치 - Google Patents

발광장치 Download PDF

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Publication number
WO2009091194A3
WO2009091194A3 PCT/KR2009/000222 KR2009000222W WO2009091194A3 WO 2009091194 A3 WO2009091194 A3 WO 2009091194A3 KR 2009000222 W KR2009000222 W KR 2009000222W WO 2009091194 A3 WO2009091194 A3 WO 2009091194A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting device
material selected
conductive semiconductor
based alloy
Prior art date
Application number
PCT/KR2009/000222
Other languages
English (en)
French (fr)
Other versions
WO2009091194A2 (ko
Inventor
강봉철
조현경
Original Assignee
엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Priority to US12/522,246 priority Critical patent/US8558260B2/en
Publication of WO2009091194A2 publication Critical patent/WO2009091194A2/ko
Publication of WO2009091194A3 publication Critical patent/WO2009091194A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials

Abstract

실시예에 따른 발광 소자는 Ag계 합금, Al계 합금, Ag, Al, Rh, 또는 Sn 중 적어도 어느 하나의 물질과, Pd, Cu, C, Sn, In, 또는 Cr 중 적어도 어느 하나의 물질의 합금으로 형성된 반사층; 및 상기 반사층 상에 제2 도전형의 반도체층, 활성층, 제1 도전형의 반도체층을 포함한다.
PCT/KR2009/000222 2008-01-16 2009-01-15 발광장치 WO2009091194A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/522,246 US8558260B2 (en) 2008-01-16 2009-01-15 Light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0005102 2008-01-16
KR1020080005102A KR101438812B1 (ko) 2008-01-16 2008-01-16 반사 구조물 및 이를 구비하는 발광 장치

Publications (2)

Publication Number Publication Date
WO2009091194A2 WO2009091194A2 (ko) 2009-07-23
WO2009091194A3 true WO2009091194A3 (ko) 2009-11-05

Family

ID=40885801

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/000222 WO2009091194A2 (ko) 2008-01-16 2009-01-15 발광장치

Country Status (3)

Country Link
US (1) US8558260B2 (ko)
KR (1) KR101438812B1 (ko)
WO (1) WO2009091194A2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107516703A (zh) * 2011-08-31 2017-12-26 奥斯兰姆奥普托半导体有限责任公司 发光二极管芯片

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5258707B2 (ja) * 2009-08-26 2013-08-07 株式会社東芝 半導体発光素子
WO2012077407A1 (ja) * 2010-12-08 2012-06-14 日亜化学工業株式会社 窒化物系半導体発光素子
KR101294246B1 (ko) * 2012-06-22 2013-08-07 고려대학교 산학협력단 중간층을 이용한 반사막을 포함하는 발광 다이오드 제조 방법, 및 상기 방법으로 제조한 발광 다이오드
KR101448842B1 (ko) * 2013-06-19 2014-10-13 엘지이노텍 주식회사 발광 다이오드
DE102014202424A1 (de) * 2014-02-11 2015-08-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer reflektierenden Schichtenfolge und Verfahren zum Erzeugen einer reflektierenden Schichtenfolge
KR20160024170A (ko) 2014-08-25 2016-03-04 삼성전자주식회사 반도체 발광 소자

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005197296A (ja) * 2003-12-26 2005-07-21 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
KR20050096582A (ko) * 2004-03-31 2005-10-06 서울옵토디바이스주식회사 질화물계 반도체소자의 피형 전극
JP2006135026A (ja) * 2004-11-04 2006-05-25 Sharp Corp Ｉｉｉ−ｖ族化合物半導体発光素子およびその製造方法
KR100635157B1 (ko) * 2005-09-09 2006-10-17 삼성전기주식회사 질화물계 반도체 발광소자
KR20060124510A (ko) * 2005-05-31 2006-12-05 삼성전기주식회사 백색 발광소자

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI227354B (en) * 2001-12-12 2005-02-01 Seiko Epson Corp Liquid crystal display device, substrate assembly for liquid crystal display device, and electronic apparatus
TW200520266A (en) * 2003-11-21 2005-06-16 Sanken Electric Co Ltd Semiconductor luminous element and manufacturing method of the same
TWI370555B (en) * 2006-12-29 2012-08-11 Epistar Corp Light-emitting diode and method for manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005197296A (ja) * 2003-12-26 2005-07-21 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
KR20050096582A (ko) * 2004-03-31 2005-10-06 서울옵토디바이스주식회사 질화물계 반도체소자의 피형 전극
JP2006135026A (ja) * 2004-11-04 2006-05-25 Sharp Corp Ｉｉｉ−ｖ族化合物半導体発光素子およびその製造方法
KR20060124510A (ko) * 2005-05-31 2006-12-05 삼성전기주식회사 백색 발광소자
KR100635157B1 (ko) * 2005-09-09 2006-10-17 삼성전기주식회사 질화물계 반도체 발광소자

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107516703A (zh) * 2011-08-31 2017-12-26 奥斯兰姆奥普托半导体有限责任公司 发光二极管芯片
CN107516703B (zh) * 2011-08-31 2019-06-14 奥斯兰姆奥普托半导体有限责任公司 发光二极管芯片

Also Published As

Publication number Publication date
US8558260B2 (en) 2013-10-15
US20110303934A1 (en) 2011-12-15
KR20090079122A (ko) 2009-07-21
WO2009091194A2 (ko) 2009-07-23
KR101438812B1 (ko) 2014-09-05

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