JP2005191326A5 - - Google Patents
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- Publication number
- JP2005191326A5 JP2005191326A5 JP2003431751A JP2003431751A JP2005191326A5 JP 2005191326 A5 JP2005191326 A5 JP 2005191326A5 JP 2003431751 A JP2003431751 A JP 2003431751A JP 2003431751 A JP2003431751 A JP 2003431751A JP 2005191326 A5 JP2005191326 A5 JP 2005191326A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal
- electrode
- semiconductor light
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 28
- 239000002184 metal Substances 0.000 claims 23
- 229910044991 metal oxide Inorganic materials 0.000 claims 5
- 150000004706 metal oxides Chemical group 0.000 claims 5
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical group O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 1
- 229910001887 tin oxide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003431751A JP4507594B2 (ja) | 2003-12-26 | 2003-12-26 | 半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003431751A JP4507594B2 (ja) | 2003-12-26 | 2003-12-26 | 半導体発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005191326A JP2005191326A (ja) | 2005-07-14 |
| JP2005191326A5 true JP2005191326A5 (enExample) | 2007-02-15 |
| JP4507594B2 JP4507594B2 (ja) | 2010-07-21 |
Family
ID=34789655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003431751A Expired - Fee Related JP4507594B2 (ja) | 2003-12-26 | 2003-12-26 | 半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4507594B2 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8115212B2 (en) | 2004-07-29 | 2012-02-14 | Showa Denko K.K. | Positive electrode for semiconductor light-emitting device |
| JP2006066903A (ja) * | 2004-07-29 | 2006-03-09 | Showa Denko Kk | 半導体発光素子用正極 |
| KR100896564B1 (ko) * | 2004-08-31 | 2009-05-07 | 삼성전기주식회사 | 반사전극 및 이를 구비하는 화합물 반도체 발광소자 |
| JP2007027539A (ja) * | 2005-07-20 | 2007-02-01 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびこれを用いた照明装置 |
| JP4867223B2 (ja) * | 2005-07-25 | 2012-02-01 | パナソニック株式会社 | 半導体発光素子およびこれを用いた照明装置 |
| JP4752394B2 (ja) * | 2005-08-23 | 2011-08-17 | 日本電気株式会社 | n型窒化物半導体の電極及びn型窒化物半導体の電極の形成方法 |
| KR100703091B1 (ko) * | 2005-09-08 | 2007-04-06 | 삼성전기주식회사 | 질화물 반도체 발광 소자 및 그 제조 방법 |
| KR100755649B1 (ko) | 2006-04-05 | 2007-09-04 | 삼성전기주식회사 | GaN계 반도체 발광소자 및 그 제조방법 |
| JP4728170B2 (ja) | 2006-05-26 | 2011-07-20 | 三菱電機株式会社 | 半導体デバイスおよびアクティブマトリクス型表示装置 |
| JP2008034822A (ja) | 2006-06-28 | 2008-02-14 | Nichia Chem Ind Ltd | 半導体発光素子 |
| JP2008098486A (ja) * | 2006-10-13 | 2008-04-24 | Kyocera Corp | 発光素子 |
| US7834373B2 (en) * | 2006-12-12 | 2010-11-16 | Hong Kong Applied Science and Technology Research Institute Company Limited | Semiconductor device having current spreading layer |
| CN102779918B (zh) | 2007-02-01 | 2015-09-02 | 日亚化学工业株式会社 | 半导体发光元件 |
| TWI366291B (en) * | 2007-03-30 | 2012-06-11 | Epistar Corp | Semiconductor light-emitting device having stacked transparent electrodes |
| JP2010003804A (ja) * | 2008-06-19 | 2010-01-07 | Sharp Corp | 窒化物半導体発光ダイオード素子およびその製造方法 |
| JP5161720B2 (ja) * | 2008-09-30 | 2013-03-13 | パナソニック株式会社 | 半導体発光素子およびその製造方法 |
| EP2477053B1 (en) | 2009-12-11 | 2019-06-19 | Olympus Corporation | Endoscope objective optical system |
| CN102473809B (zh) * | 2010-04-20 | 2015-08-12 | 松下电器产业株式会社 | 发光二极管 |
| CN102473808B (zh) * | 2010-05-07 | 2014-11-26 | 松下电器产业株式会社 | 发光二极管 |
| JP5949294B2 (ja) | 2011-08-31 | 2016-07-06 | 日亜化学工業株式会社 | 半導体発光素子 |
| JP5949368B2 (ja) * | 2012-09-13 | 2016-07-06 | 豊田合成株式会社 | 半導体発光素子とその製造方法 |
| JP6307703B2 (ja) | 2013-05-31 | 2018-04-11 | パナソニックIpマネジメント株式会社 | 波長変換素子、波長変換素子を備えた発光装置、発光装置を備えた車両、および波長変換素子の製造方法 |
| KR101618005B1 (ko) | 2015-04-20 | 2016-05-04 | 영남대학교 산학협력단 | 자외선 발광다이오드용 전극 구조체 및 그 제조방법 |
| KR102476036B1 (ko) | 2016-05-09 | 2022-12-12 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 |
| KR101895227B1 (ko) * | 2016-12-22 | 2018-09-07 | 주식회사 세미콘라이트 | 반도체 발광소자 |
| JP7312789B2 (ja) * | 2019-03-19 | 2023-07-21 | 晶元光電股▲ふん▼有限公司 | 発光素子 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001077414A (ja) * | 1999-09-07 | 2001-03-23 | Showa Denko Kk | Iii族窒化物半導体発光素子 |
-
2003
- 2003-12-26 JP JP2003431751A patent/JP4507594B2/ja not_active Expired - Fee Related
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