JP4507594B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP4507594B2
JP4507594B2 JP2003431751A JP2003431751A JP4507594B2 JP 4507594 B2 JP4507594 B2 JP 4507594B2 JP 2003431751 A JP2003431751 A JP 2003431751A JP 2003431751 A JP2003431751 A JP 2003431751A JP 4507594 B2 JP4507594 B2 JP 4507594B2
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Japan
Prior art keywords
layer
metal
electrode
light
light emitting
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Expired - Fee Related
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JP2003431751A
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English (en)
Japanese (ja)
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JP2005191326A5 (enExample
JP2005191326A (ja
Inventor
雅彦 佐野
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Nichia Corp
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Nichia Corp
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Priority to JP2003431751A priority Critical patent/JP4507594B2/ja
Publication of JP2005191326A publication Critical patent/JP2005191326A/ja
Publication of JP2005191326A5 publication Critical patent/JP2005191326A5/ja
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  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
JP2003431751A 2003-12-26 2003-12-26 半導体発光素子 Expired - Fee Related JP4507594B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003431751A JP4507594B2 (ja) 2003-12-26 2003-12-26 半導体発光素子

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JP2003431751A JP4507594B2 (ja) 2003-12-26 2003-12-26 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2005191326A JP2005191326A (ja) 2005-07-14
JP2005191326A5 JP2005191326A5 (enExample) 2007-02-15
JP4507594B2 true JP4507594B2 (ja) 2010-07-21

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JP2003431751A Expired - Fee Related JP4507594B2 (ja) 2003-12-26 2003-12-26 半導体発光素子

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Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8115212B2 (en) 2004-07-29 2012-02-14 Showa Denko K.K. Positive electrode for semiconductor light-emitting device
JP2006066903A (ja) * 2004-07-29 2006-03-09 Showa Denko Kk 半導体発光素子用正極
KR100896564B1 (ko) * 2004-08-31 2009-05-07 삼성전기주식회사 반사전극 및 이를 구비하는 화합물 반도체 발광소자
JP2007027539A (ja) * 2005-07-20 2007-02-01 Matsushita Electric Ind Co Ltd 半導体発光素子およびこれを用いた照明装置
JP4867223B2 (ja) * 2005-07-25 2012-02-01 パナソニック株式会社 半導体発光素子およびこれを用いた照明装置
JP4752394B2 (ja) * 2005-08-23 2011-08-17 日本電気株式会社 ｎ型窒化物半導体の電極及びｎ型窒化物半導体の電極の形成方法
KR100703091B1 (ko) * 2005-09-08 2007-04-06 삼성전기주식회사 질화물 반도체 발광 소자 및 그 제조 방법
KR100755649B1 (ko) 2006-04-05 2007-09-04 삼성전기주식회사 ＧａＮ계 반도체 발광소자 및 그 제조방법
JP4728170B2 (ja) 2006-05-26 2011-07-20 三菱電機株式会社 半導体デバイスおよびアクティブマトリクス型表示装置
JP2008034822A (ja) 2006-06-28 2008-02-14 Nichia Chem Ind Ltd 半導体発光素子
JP2008098486A (ja) * 2006-10-13 2008-04-24 Kyocera Corp 発光素子
US7834373B2 (en) * 2006-12-12 2010-11-16 Hong Kong Applied Science and Technology Research Institute Company Limited Semiconductor device having current spreading layer
CN102779918B (zh) 2007-02-01 2015-09-02 日亚化学工业株式会社 半导体发光元件
TWI366291B (en) * 2007-03-30 2012-06-11 Epistar Corp Semiconductor light-emitting device having stacked transparent electrodes
JP2010003804A (ja) * 2008-06-19 2010-01-07 Sharp Corp 窒化物半導体発光ダイオード素子およびその製造方法
JP5161720B2 (ja) * 2008-09-30 2013-03-13 パナソニック株式会社 半導体発光素子およびその製造方法
EP2477053B1 (en) 2009-12-11 2019-06-19 Olympus Corporation Endoscope objective optical system
CN102473809B (zh) * 2010-04-20 2015-08-12 松下电器产业株式会社 发光二极管
CN102473808B (zh) * 2010-05-07 2014-11-26 松下电器产业株式会社 发光二极管
JP5949294B2 (ja) 2011-08-31 2016-07-06 日亜化学工業株式会社 半導体発光素子
JP5949368B2 (ja) * 2012-09-13 2016-07-06 豊田合成株式会社 半導体発光素子とその製造方法
JP6307703B2 (ja) 2013-05-31 2018-04-11 パナソニックＩｐマネジメント株式会社 波長変換素子、波長変換素子を備えた発光装置、発光装置を備えた車両、および波長変換素子の製造方法
KR101618005B1 (ko) 2015-04-20 2016-05-04 영남대학교 산학협력단 자외선 발광다이오드용 전극 구조체 및 그 제조방법
KR102476036B1 (ko) 2016-05-09 2022-12-12 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
KR101895227B1 (ko) * 2016-12-22 2018-09-07 주식회사 세미콘라이트 반도체 발광소자
JP7312789B2 (ja) * 2019-03-19 2023-07-21 晶元光電股▲ふん▼有限公司 発光素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077414A (ja) * 1999-09-07 2001-03-23 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子

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