JP2009088521A - 窒化ガリウム系発光ダイオード素子 - Google Patents
窒化ガリウム系発光ダイオード素子 Download PDFInfo
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- JP2009088521A JP2009088521A JP2008248815A JP2008248815A JP2009088521A JP 2009088521 A JP2009088521 A JP 2009088521A JP 2008248815 A JP2008248815 A JP 2008248815A JP 2008248815 A JP2008248815 A JP 2008248815A JP 2009088521 A JP2009088521 A JP 2009088521A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 73
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 239000010410 layer Substances 0.000 claims abstract description 171
- 239000012790 adhesive layer Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000005476 soldering Methods 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 68
- 239000002184 metal Substances 0.000 claims description 68
- 239000004065 semiconductor Substances 0.000 claims description 45
- 150000004767 nitrides Chemical class 0.000 claims description 43
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 229910052709 silver Inorganic materials 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052718 tin Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 9
- 230000005496 eutectics Effects 0.000 claims description 9
- 150000002739 metals Chemical class 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 230000002265 prevention Effects 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- -1 ITO Inorganic materials 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
【解決手段】LEDチップ100と、該LEDチップ100が接着層300を介して共融ボンディングされたサブマウント200とを含み、該接着層300は、第1の金属層310及び第2の金属層320が順に積層されている複数の金属層が半田付けされることによって構成され、該第2の金属層320はペースト状でなされる。
【選択図】 図2
Description
図2を参照して、本発明の一実施の形態による窒化ガリウム系LED素子について詳細に説明する。図2は、本発明の一実施の形態による窒化ガリウム系LED素子の構造を概略的に示した断面図である。
本発明の一実施の形態による窒化ガリウム系LED素子の製造方法に対して、図4a及び図4bと前述の図2とを参照して詳細に説明する。
200 サブマウント
300 接着層
310 第1の金属層
320 第2の金属層
330 第3の金属層
400 反射層
500 拡散防止層
Claims (24)
- LEDチップと、
前記LEDチップが接着層を介して共融ボンディングされたサブマウントと、
を含み、
前記接着層は、第1の金属層及び第2の金属層が順に積層されている複数の金属層が半田付けされることによって構成され、前記第2の金属層はペースト状でなされたことを特徴とする窒化ガリウム系発光ダイオード素子。 - 前記第1の金属層が、前記第2の金属層と同一の物質から成ることを特徴とする請求項1に記載の窒化ガリウム系発光ダイオード素子。
- 前記第1の金属層が、Sn、Ag、Au、Cuの群より選ばれる一つ以上の金属から成ることを特徴とする請求項1に記載の窒化ガリウム系発光ダイオード素子。
- 前記第2の金属層が、SnまたはAgを含む合金から成ることを特徴とする請求項1に記載の窒化ガリウム系発光ダイオード素子。
- 前記LEDチップと前記接着層との間に、さらに、透明層が設けられることを特徴とする請求項1に記載の窒化ガリウム系発光ダイオード素子。
- 前記透明層は、NiOX、TiO2、ITO、SiO2の群より選ばれる一つ以上の酸化物、またはSi3N4、MgF2から成ることを特徴とする請求項5に記載の窒化ガリウム系発光ダイオード素子。
- 前記透明層と前記接着層との間に、さらに、反射層が設けられることを特徴とする請求項6に記載の窒化ガリウム系発光ダイオード素子。
- 前記反射層が、AgまたはAlのうちの少なくともいずれか一つ以上を含む合金から成ることを特徴とする請求項7に記載の窒化ガリウム系発光ダイオード素子。
- 前記反射層と前記接着層との間に、さらに、拡散防止層が設けられることを特徴とする請求項7に記載の窒化ガリウム系発光ダイオード素子。
- 前記拡散防止層が、Ni、Pt、Cr、Ti、Wの群より選ばれる一つ以上の金属から成ることを特徴とする請求項9に記載の窒化ガリウム系発光ダイオード素子。
- 前記LEDチップが、基板と、該基板上に設けられ、第1の領域及び第2の領域に区分されたn型窒化物半導体層と、該n型窒化物半導体層の前記第1の領域上に設けられた活性層と、該活性層上に設けられたp型窒化物半導体層と、該p型窒化物半導体層上に設けられたp型電極と、前記n型窒化物半導体層の前記第2の領域上に設けられたn型電極と、を含んで構成されることを特徴とする請求項1に記載の窒化ガリウム系発光ダイオード素子。
- 前記LEDチップが、n型電極と、該n型電極の下面にn型窒化物半導体層、活性層及びp型窒化物半導体層が下方に順に積層されて設けられた発光構造物と、該発光構造物の下面に設けられたp型電極と、該p型電極の下面に設けられた構造支持層とを含んで構成されることを特徴とする請求項1に記載の窒化ガリウム系発光ダイオード素子。
- LEDチップを準備するステップと、
前記LEDチップの発光面の反対面に第1の金属層を設けるステップと、
サブマウントを準備するステップと、
前記LEDチップとボンディングされるべき前記サブマウントの一面に、第2の金属層を設けるステップと、
前記第1の金属層と前記第2の金属層とを半田付けして共融ボンディングするステップとを含み、
前記第2の金属層が、ペースト状であることを特徴とする窒化ガリウム系発光ダイオード素子の製造方法。 - 前記第1の金属層が、前記第2の金属層と同一の物質から成ることを特徴とする請求項13に記載の窒化ガリウム系発光ダイオード素子の製造方法。
- 前記第1の金属層が、Sn、Ag、Au、Cuの群より選ばれる一つ以上の金属から成ることを特徴とする請求項13に記載の窒化ガリウム系発光ダイオード素子の製造方法。
- 前記第2の金属層が、SnまたはAgを含む合金から成ることを特徴とする請求項13に記載の窒化ガリウム系発光ダイオード素子の製造方法。
- 前記LEDチップの発光面の反対面に前記第1の金属層を設けるステップの前に、
前記LEDチップの発光面の反対面に透明層を設けるステップを、さらに含むことを特徴とする請求項13に記載の窒化ガリウム系発光ダイオード素子の製造方法。 - 前記透明層が、NiOx、TiO2、ITO、SiO2の群より選ばれる一つ以上の酸化物、またはSi3N4、MgF2から成ることを特徴とする請求項17に記載の窒化ガリウム系発光ダイオード素子の製造方法。
- 前記LEDチップの発光面の反対面に透明層を設けるステップの後に、
前記透明層上に反射層を設けるステップを、さらに含むことを特徴とする請求項17に記載の窒化ガリウム系発光ダイオード素子の製造方法。 - 前記反射層が、AgまたはAlのうちの少なくともいずれか一つ以上を含む合金から成ることを特徴とする請求項19に記載の窒化ガリウム系発光ダイオード素子の製造方法。
- 前記LEDチップの発光面の反対面に反射層を設けるステップの後に、
前記反射層上に拡散防止層を設けるステップを、さらに含むことを特徴とする請求項19に記載の窒化ガリウム系発光ダイオード素子の製造方法。 - 前記拡散防止層が、Ni、Pt、Cr、Ti、Wの群より選ばれる一つ以上の金属から成ることを特徴とする請求項21に記載の窒化ガリウム系発光ダイオード素子の製造方法。
- 前記LEDチップが、基板と、該基板上に設けられ、第1の領域及び第2の領域に区分されたn型窒化物半導体層と、該n型窒化物半導体層の前記第1の領域上に設けられた活性層と、該活性層上に設けられたp型窒化物半導体層と、該p型窒化物半導体層上に設けられたp型電極と、前記n型窒化物半導体層の前記第2の領域上に設けられたn型電極とを含んで構成されることを特徴とする請求項13に記載の窒化ガリウム系発光ダイオード素子の製造方法。
- 前記LEDチップが、n型電極と、該n型電極の下面にn型窒化物半導体層、活性層及びp型窒化物半導体層が下方に順に積層されて設けられた発光構造物と、該発光構造物の下面に設けられたp型電極と、該p型電極の下面に設けられた構造支持層とを含んで構成されることを特徴とする請求項13に記載の窒化ガリウム系発光ダイオード素子の製造方法。
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