JP4857310B2 - 半導体発光素子及びその製造方法 - Google Patents
半導体発光素子及びその製造方法 Download PDFInfo
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- JP4857310B2 JP4857310B2 JP2008163168A JP2008163168A JP4857310B2 JP 4857310 B2 JP4857310 B2 JP 4857310B2 JP 2008163168 A JP2008163168 A JP 2008163168A JP 2008163168 A JP2008163168 A JP 2008163168A JP 4857310 B2 JP4857310 B2 JP 4857310B2
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- Prior art keywords
- light emitting
- light
- layer
- semiconductor
- emitting diode
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 60
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 57
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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Description
S.Nakamura et. al., "The Blue Laser Diode", Springer-Verlag Berlin Heidelberg New York: p.216
本発明の第1の実施形態について図面を参照しながら説明する。
以下、本発明の第2の実施形態について図面を参照しながら説明する。
以下、本発明の第3の実施形態について図面を参照しながら説明する。
以下、本発明の第4の実施形態について図面を参照しながら説明する。
以下、本発明の第5の実施形態について図面を参照しながら説明する。
以下、本発明の第6の実施形態について図面を参照しながら説明する。
以下、本発明の第7の実施形態について図面を参照しながら説明する。
本発明の第8の実施形態について図面を参照しながら説明する。
以下、本発明の第9の実施形態について図面を参照しながら説明する。
以下、本発明の第10の実施形態について図面を参照しながら説明する。
11 基板
12 n型半導体層
12a n側電極形成領域
13 活性層
14 p型半導体層
15 赤色発光層
16 透明電極
16a 開口部
17 p側電極
18 n側電極
19 YAG蛍光体を含む絶縁材
20 パッケージ
22 第1バンプ
23 第2バンプ
24 緑色発光層
25 青色発光層
30 紫外発光ダイオード部
31 金めっき層
32 n型半導体層
33 活性層
34 p型半導体層
51 レジスト膜
52 保持基板
53 接着剤
110 青色発光ダイオード部
111 基板
112 n型半導体層
112a 第2のn側電極形成領域
113 活性層
114 p+型半導体層
115 n+型半導体層
116 赤色発光層
117 第1のn側電極
118 第2のn側電極
119 絶縁材
120 パッケージ
121 青色発光層
122 緑色発光層
130 紫外発光ダイオード部
131 金めっき層
132 n型半導体層
132a 第2のn側電極形成領域
133 活性層
134 p+型半導体層
135 n+型半導体層
150 赤色発光Euドープ層
151 保持基板
152 接着剤
Claims (25)
- 複数の半導体層からなり、第1の発光光を出力する発光ダイオード部と、
前記発光ダイオード部に設けられ、前記第1の発光光を吸収して該第1の発光光とは中心波長が異なる第2の発光光を放出する半導体膜と、
前記発光ダイオード部に設けられた電極とを備え、
前記半導体膜は、前記第2の発光光を前記第1の発光光による光励起によって放出し、
前記半導体膜は、複数に分割されており、
前記電極は、前記複数の半導体膜を継続的に覆うように形成されていることを特徴とする半導体発光素子。 - 前記半導体層の表面は、前記半導体膜が形成されない領域において凹部を有し、該凹部の側面が前記電極により覆われることを特徴とする請求項1に記載の半導体発光素子。
- 前記電極は、前記第1の発光光又は前記第2の発光光を透過することを特徴とする請求項1又は2に記載の半導体発光素子。
- 前記電極は、金属電極であることを特徴とする請求項1又は2に記載の半導体発光素子。
- 前記電極は、前記第1の発光光又は前記第2の発光光に対する反射率が60%以上であることを特徴とする請求項4に記載の半導体発光素子。
- 前記電極は、金、白金、銅、銀及びロジウムからなる群より選択される少なくとも1つの材料からなる単層膜又は多層膜により構成されていることを特徴とする請求項5に記載の半導体発光素子。
- 前記発光ダイオード部に設けられ、膜厚が少なくとも10μmの金属膜をさらに備え、
前記発光ダイオード部は前記金属膜を通して電流が注入されることを特徴とする請求項1〜3のうちのいずれか1項に記載の半導体発光素子。 - 前記金属膜は、金、銅又は銀により構成されていることを特徴とする請求項7に記載の半導体発光素子。
- 前記第1の発光光は、青色光又は紫外光であることを特徴とする請求項1〜8のうちのいずれか1項に記載の半導体発光素子。
- 前記半導体膜は、前記第1の発光光により励起され、赤色の前記第2の発光光を放出することを特徴とする請求項9に記載の半導体発光素子。
- 前記半導体膜は、互いに波長が異なる発光光を放出する複数の半導体膜が積層されて形成されていることを特徴とする請求項1〜10のうちのいずれか1項に記載の半導体発光素子。
- 前記半導体膜は不純物が添加されており、該半導体膜は、前記第1の発光光により励起され、且つ前記不純物に起因するエネルギー準位を介して可視域の前記第2の発光光を放出することを特徴とする前記1〜11のうちのいずれかに記載の半導体発光素子。
- 前記半導体膜は不純物が添加されており、該半導体膜は、前記不純物における内殻電子を介した発光により可視域の前記第2の発光光を放出することを特徴とする請求項1〜11のうちのいずれかに記載の半導体発光素子。
- 前記不純物は、ユウロピウム、サマリウム又はイッテルビウムであることを特徴とする請求項13に記載の半導体発光素子。
- 前記発光ダイオード部又は前記半導体膜は、単結晶からなる基板上に形成されていることを特徴とする請求項1〜6及び9〜14のうちのいずれかに記載の半導体発光素子。
- 前記基板は、第1の発光光及び第2の発光光を透過することを特徴とする請求項15に記載の半導体発光素子。
- 前記単結晶は、サファイア、炭化ケイ素、窒化ガリウム、窒化アルミニウム、酸化マグネシウム、酸化リチウムガリウム、酸化リチウムアルミニウム、又は酸化リチウムガリウムと酸化リチウムアルミニウムの混晶であることを特徴とする請求項15に記載の半導体発光素子。
- 前記発光ダイオード部及び半導体膜を覆うと共に、前記第1の発光光を吸収して第3の発光光を放出する蛍光体をさらに備えていることを特徴とする請求項1〜17のうちのいずれか1項に記載の半導体発光素子。
- 単結晶からなる基板上に、複数の半導体層からなる発光ダイオード部を形成する工程(a)と、
前記発光ダイオード部の上に、該発光ダイオード部が出力する第1の発光光を吸収し、吸収した前記第1の発光光による光励起によって該第1の発光光とは中心波長が異なる第2の発光光を放出する、複数に分割された半導体膜を選択的に形成する工程(b)と、
前記工程(b)よりも後に、前記発光ダイオード部の上に、電極を形成する工程(c)を備え、
前記工程(c)において、前記電極を、前記複数の半導体膜を継続的に覆うように形成することを特徴とする半導体発光素子の製造方法。 - 前記工程(b)において、前記発光ダイオード部を構成する半導体層の表面における前記半導体膜が形成されない領域に凹部を形成し、
前記工程(c)において、前記電極を、前記凹部の側面を覆うように形成することを特徴とする請求項19に記載の半導体発光素子の製造方法。 - 前記工程(b)よりも後に前記基板における前記発光ダイオード部の反対側の面から、前記基板に吸収されず且つ前記発光ダイオード部を構成する半導体層で吸収される波長を持つ光を照射することにより、前記ダイオード部から前記基板を分離する工程(d)をさらに備えていることを特徴とする請求項19〜20のうちのいずれかに記載の半導体発光素子の製造方法。
- 前記工程(d)において、光が照射された前記半導体層の一部に該半導体層が熱分解されてなる分解層を形成することを特徴とする請求項21に記載の半導体発光素子の製造方法。
- 前記工程(d)よりも後に、前記発光ダイオード部又は前記半導体膜の上に金属膜を形成する工程(e)をさらに備えていることを特徴とする請求項21に記載の半導体発光素子の製造方法。
- 前記工程(b)は、前記半導体膜に不純物を添加する工程を含むことを特徴とする請求項19〜23のうちのいずれかに記載の半導体発光素子の製造方法。
- 前記不純物は、イオン注入により添加されることを特徴とする請求項24に記載の半導体発光素子の製造方法。
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US7569863B2 (en) | 2009-08-04 |
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US20050184305A1 (en) | 2005-08-25 |
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