JP2008227553A - 半導体発光素子及びその製造方法 - Google Patents
半導体発光素子及びその製造方法 Download PDFInfo
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- JP2008227553A JP2008227553A JP2008163168A JP2008163168A JP2008227553A JP 2008227553 A JP2008227553 A JP 2008227553A JP 2008163168 A JP2008163168 A JP 2008163168A JP 2008163168 A JP2008163168 A JP 2008163168A JP 2008227553 A JP2008227553 A JP 2008227553A
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- Prior art keywords
- light emitting
- layer
- light
- emitting diode
- type semiconductor
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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Abstract
【解決手段】青色発光ダイオード部10と、該青色発光ダイオード部10の上にエピタキシャル成長してなる赤色発光層15と、YAG蛍光体を含む絶縁材19とから構成されている。赤色発光層15は、例えば禁制帯幅が1.9eVであるアンドープのIn0.4Ga0.6Nからなり、p型半導体層14の上に互いに間隔をおいた複数の島状に形成されている。
【選択図】図1
Description
S.Nakamura et. al., "The Blue Laser Diode", Springer-Verlag Berlin Heidelberg New York: p.216
本発明の第1の実施形態について図面を参照しながら説明する。
以下、本発明の第2の実施形態について図面を参照しながら説明する。
以下、本発明の第3の実施形態について図面を参照しながら説明する。
以下、本発明の第4の実施形態について図面を参照しながら説明する。
以下、本発明の第5の実施形態について図面を参照しながら説明する。
以下、本発明の第6の実施形態について図面を参照しながら説明する。
以下、本発明の第7の実施形態について図面を参照しながら説明する。
本発明の第8の実施形態について図面を参照しながら説明する。
以下、本発明の第9の実施形態について図面を参照しながら説明する。
以下、本発明の第10の実施形態について図面を参照しながら説明する。
11 基板
12 n型半導体層
12a n側電極形成領域
13 活性層
14 p型半導体層
15 赤色発光層
16 透明電極
16a 開口部
17 p側電極
18 n側電極
19 YAG蛍光体を含む絶縁材
20 パッケージ
22 第1バンプ
23 第2バンプ
24 緑色発光層
25 青色発光層
30 紫外発光ダイオード部
31 金めっき層
32 n型半導体層
33 活性層
34 p型半導体層
51 レジスト膜
52 保持基板
53 接着剤
110 青色発光ダイオード部
111 基板
112 n型半導体層
112a 第2のn側電極形成領域
113 活性層
114 p+型半導体層
115 n+型半導体層
116 赤色発光層
117 第1のn側電極
118 第2のn側電極
119 絶縁材
120 パッケージ
121 青色発光層
122 緑色発光層
130 紫外発光ダイオード部
131 金めっき層
132 n型半導体層
132a 第2のn側電極形成領域
133 活性層
134 p+型半導体層
135 n+型半導体層
150 赤色発光Euドープ層
151 保持基板
152 接着剤
Claims (1)
- 第1の発光光を出力する発光ダイオード部と、
前記発光ダイオード部に設けられ、前記第1の発光光を吸収して第2の発光光を放出する半導体膜とを備え、
前記半導体膜は、前記第2の発光光を前記第1の発光光による光励起によって放出することを特徴とする半導体発光素子。
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Also Published As
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US20090261372A1 (en) | 2009-10-22 |
JP4857310B2 (ja) | 2012-01-18 |
US20050184305A1 (en) | 2005-08-25 |
US7569863B2 (en) | 2009-08-04 |
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