JP2005123489A5 - - Google Patents

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Publication number
JP2005123489A5
JP2005123489A5 JP2003358664A JP2003358664A JP2005123489A5 JP 2005123489 A5 JP2005123489 A5 JP 2005123489A5 JP 2003358664 A JP2003358664 A JP 2003358664A JP 2003358664 A JP2003358664 A JP 2003358664A JP 2005123489 A5 JP2005123489 A5 JP 2005123489A5
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JP
Japan
Prior art keywords
nitride semiconductor
electrode
semiconductor light
transparent conductive
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003358664A
Other languages
English (en)
Japanese (ja)
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JP4449405B2 (ja
JP2005123489A (ja
Filing date
Publication date
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Priority to JP2003358664A priority Critical patent/JP4449405B2/ja
Priority claimed from JP2003358664A external-priority patent/JP4449405B2/ja
Publication of JP2005123489A publication Critical patent/JP2005123489A/ja
Publication of JP2005123489A5 publication Critical patent/JP2005123489A5/ja
Application granted granted Critical
Publication of JP4449405B2 publication Critical patent/JP4449405B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003358664A 2003-10-20 2003-10-20 窒化物半導体発光素子およびその製造方法 Expired - Fee Related JP4449405B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003358664A JP4449405B2 (ja) 2003-10-20 2003-10-20 窒化物半導体発光素子およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003358664A JP4449405B2 (ja) 2003-10-20 2003-10-20 窒化物半導体発光素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2005123489A JP2005123489A (ja) 2005-05-12
JP2005123489A5 true JP2005123489A5 (enExample) 2006-12-07
JP4449405B2 JP4449405B2 (ja) 2010-04-14

Family

ID=34615118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003358664A Expired - Fee Related JP4449405B2 (ja) 2003-10-20 2003-10-20 窒化物半導体発光素子およびその製造方法

Country Status (1)

Country Link
JP (1) JP4449405B2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5138873B2 (ja) * 2005-05-19 2013-02-06 日亜化学工業株式会社 窒化物半導体素子
KR100833309B1 (ko) * 2006-04-04 2008-05-28 삼성전기주식회사 질화물계 반도체 발광소자
JP5232970B2 (ja) * 2006-04-13 2013-07-10 豊田合成株式会社 半導体発光素子の製造方法及び半導体発光素子とそれを備えたランプ
US8878245B2 (en) 2006-11-30 2014-11-04 Cree, Inc. Transistors and method for making ohmic contact to transistors
KR100809220B1 (ko) 2007-02-01 2008-02-29 삼성전기주식회사 반도체 발광소자
TWI366291B (en) * 2007-03-30 2012-06-11 Epistar Corp Semiconductor light-emitting device having stacked transparent electrodes
US9484499B2 (en) 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
US8368100B2 (en) 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
JP5115425B2 (ja) * 2008-09-24 2013-01-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
KR101533817B1 (ko) * 2008-12-31 2015-07-09 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
US8741715B2 (en) 2009-04-29 2014-06-03 Cree, Inc. Gate electrodes for millimeter-wave operation and methods of fabrication
JP4686625B2 (ja) 2009-08-03 2011-05-25 株式会社東芝 半導体発光装置の製造方法
JP5519383B2 (ja) * 2010-04-16 2014-06-11 シチズンホールディングス株式会社 半導体発光装置
KR101158080B1 (ko) * 2010-07-22 2012-06-22 서울옵토디바이스주식회사 발광다이오드
JP5211121B2 (ja) * 2010-08-06 2013-06-12 株式会社東芝 半導体発光素子の製造方法
JP5066274B1 (ja) 2011-05-16 2012-11-07 株式会社東芝 半導体発光素子
JP5662277B2 (ja) * 2011-08-08 2015-01-28 株式会社東芝 半導体発光装置及び発光モジュール
JP5205502B2 (ja) * 2011-11-07 2013-06-05 株式会社東芝 半導体発光装置
JP2014157921A (ja) * 2013-02-15 2014-08-28 Stanley Electric Co Ltd 半導体素子及びその製造方法
JP2015026756A (ja) * 2013-07-29 2015-02-05 株式会社アルバック 発光ダイオード素子
JP6261927B2 (ja) * 2013-09-24 2018-01-17 スタンレー電気株式会社 半導体発光素子
JP6485019B2 (ja) 2013-12-19 2019-03-20 日亜化学工業株式会社 半導体発光素子
JP2015173229A (ja) * 2014-03-12 2015-10-01 沖電気工業株式会社 透明電極構造、窒化物半導体発光ダイオード、及び透明電極成膜方法
USD826871S1 (en) 2014-12-11 2018-08-28 Cree, Inc. Light emitting diode device

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