JP2005203763A5 - - Google Patents
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- Publication number
- JP2005203763A5 JP2005203763A5 JP2004363416A JP2004363416A JP2005203763A5 JP 2005203763 A5 JP2005203763 A5 JP 2005203763A5 JP 2004363416 A JP2004363416 A JP 2004363416A JP 2004363416 A JP2004363416 A JP 2004363416A JP 2005203763 A5 JP2005203763 A5 JP 2005203763A5
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- thin film
- film transistor
- memory
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims 32
- 239000004065 semiconductor Substances 0.000 claims 15
- 238000000034 method Methods 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 6
- 239000010949 copper Substances 0.000 claims 4
- 238000005520 cutting process Methods 0.000 claims 4
- 239000010931 gold Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052797 bismuth Inorganic materials 0.000 claims 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 238000003698 laser cutting Methods 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004363416A JP4963160B2 (ja) | 2003-12-19 | 2004-12-15 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003423841 | 2003-12-19 | ||
| JP2003423841 | 2003-12-19 | ||
| JP2004363416A JP4963160B2 (ja) | 2003-12-19 | 2004-12-15 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005203763A JP2005203763A (ja) | 2005-07-28 |
| JP2005203763A5 true JP2005203763A5 (enExample) | 2007-12-06 |
| JP4963160B2 JP4963160B2 (ja) | 2012-06-27 |
Family
ID=34829375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004363416A Expired - Fee Related JP4963160B2 (ja) | 2003-12-19 | 2004-12-15 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4963160B2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006003844A1 (ja) * | 2004-07-06 | 2006-01-12 | Konica Minolta Holdings, Inc. | 半導体装置、その製造方法及び電子装置 |
| US8058146B2 (en) * | 2004-09-24 | 2011-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method |
| JP4906076B2 (ja) * | 2005-07-29 | 2012-03-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5127176B2 (ja) * | 2005-07-29 | 2013-01-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5063084B2 (ja) * | 2005-11-09 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US20070126556A1 (en) * | 2005-12-07 | 2007-06-07 | Kovio, Inc. | Printed radio frequency identification (RFID) tag using tags-talk-first (TTF) protocol |
| US20070138462A1 (en) * | 2005-12-21 | 2007-06-21 | Palo Alto Research Center Incorporated | Electronic device with unique encoding |
| EP1993781A4 (en) | 2006-02-03 | 2016-11-09 | Semiconductor Energy Lab Co Ltd | MANUFACTURING METHOD FOR MEMORY ELEMENT, LASER RADIATION APPARATUS AND LASER RADIATION METHOD |
| JP5178022B2 (ja) * | 2006-02-03 | 2013-04-10 | 株式会社半導体エネルギー研究所 | 記憶素子の作製方法 |
| US8580700B2 (en) | 2006-02-17 | 2013-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7532378B2 (en) | 2006-02-21 | 2009-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, method of laser irradiation, and method for manufacturing semiconductor device |
| US7541213B2 (en) | 2006-07-21 | 2009-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| TWI632553B (zh) * | 2014-02-11 | 2018-08-11 | 比利時商愛美科公司 | 薄膜電子電路的客製化方法 |
| CN119849416B (zh) * | 2025-03-19 | 2025-05-16 | 河南嵩山实验室产业研究院有限公司洛阳分公司 | 基于亲和性与对称性的晶圆级芯片布局方法、装置及介质 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63244497A (ja) * | 1987-03-31 | 1988-10-11 | Texas Instr Japan Ltd | 半導体装置 |
| JP2679146B2 (ja) * | 1988-09-05 | 1997-11-19 | 日本電気株式会社 | 半導体記憶装置およびその製造方法 |
| JPH0481299U (enExample) * | 1990-11-27 | 1992-07-15 | ||
| JPH06112436A (ja) * | 1992-09-28 | 1994-04-22 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JPH0773689A (ja) * | 1993-09-03 | 1995-03-17 | Nec Kyushu Ltd | 半導体記憶回路 |
| JPH1022481A (ja) * | 1996-07-08 | 1998-01-23 | Toshiba Corp | 読み出し専用半導体記憶装置 |
| JP4085459B2 (ja) * | 1998-03-02 | 2008-05-14 | セイコーエプソン株式会社 | ３次元デバイスの製造方法 |
| JP2003133691A (ja) * | 2001-10-22 | 2003-05-09 | Seiko Epson Corp | 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体 |
-
2004
- 2004-12-15 JP JP2004363416A patent/JP4963160B2/ja not_active Expired - Fee Related
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