JP2006310799A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006310799A5 JP2006310799A5 JP2006074366A JP2006074366A JP2006310799A5 JP 2006310799 A5 JP2006310799 A5 JP 2006310799A5 JP 2006074366 A JP2006074366 A JP 2006074366A JP 2006074366 A JP2006074366 A JP 2006074366A JP 2006310799 A5 JP2006310799 A5 JP 2006310799A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- region
- layer
- memory device
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 53
- 239000010408 film Substances 0.000 claims 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 11
- 239000010409 thin film Substances 0.000 claims 11
- 239000010936 titanium Substances 0.000 claims 11
- 229910052719 titanium Inorganic materials 0.000 claims 11
- 229910052782 aluminium Inorganic materials 0.000 claims 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 6
- 150000002894 organic compounds Chemical class 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000002356 single layer Substances 0.000 claims 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006074366A JP5008323B2 (ja) | 2005-03-28 | 2006-03-17 | メモリ装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005091318 | 2005-03-28 | ||
| JP2005091318 | 2005-03-28 | ||
| JP2006074366A JP5008323B2 (ja) | 2005-03-28 | 2006-03-17 | メモリ装置 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010046236A Division JP2010183088A (ja) | 2005-03-28 | 2010-03-03 | 半導体装置 |
| JP2012061508A Division JP5401574B2 (ja) | 2005-03-28 | 2012-03-19 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006310799A JP2006310799A (ja) | 2006-11-09 |
| JP2006310799A5 true JP2006310799A5 (enExample) | 2009-04-02 |
| JP5008323B2 JP5008323B2 (ja) | 2012-08-22 |
Family
ID=37477263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006074366A Expired - Fee Related JP5008323B2 (ja) | 2005-03-28 | 2006-03-17 | メモリ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5008323B2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7692223B2 (en) * | 2006-04-28 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method for manufacturing the same |
| EP1962408B1 (en) | 2006-11-16 | 2015-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Radio field intensity measurement device, and radio field intensity detector and game console using the same |
| KR101416876B1 (ko) | 2006-11-17 | 2014-07-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조방법 |
| EP2084745A4 (en) | 2006-11-29 | 2012-10-24 | Semiconductor Energy Lab | DEVICE AND METHOD FOR THE PRODUCTION THEREOF |
| JP5459896B2 (ja) * | 2007-03-05 | 2014-04-02 | 株式会社半導体エネルギー研究所 | 配線及び記憶素子の作製方法 |
| JP5512931B2 (ja) * | 2007-03-26 | 2014-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7977678B2 (en) * | 2007-12-21 | 2011-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| WO2011062067A1 (en) * | 2009-11-20 | 2011-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN102687275B (zh) * | 2010-02-05 | 2016-01-27 | 株式会社半导体能源研究所 | 半导体装置 |
| US8941112B2 (en) | 2010-12-28 | 2015-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI539597B (zh) * | 2011-01-26 | 2016-06-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP2012209543A (ja) * | 2011-03-11 | 2012-10-25 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US9111795B2 (en) | 2011-04-29 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with capacitor connected to memory element through oxide semiconductor film |
| US9653614B2 (en) * | 2012-01-23 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US10566455B2 (en) | 2013-03-28 | 2020-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09162370A (ja) * | 1995-12-14 | 1997-06-20 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| JP2002026282A (ja) * | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | 単純マトリクス型メモリ素子の製造方法 |
| JP2002026283A (ja) * | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | 多層構造のメモリ装置及びその製造方法 |
| JP2002043517A (ja) * | 2000-07-21 | 2002-02-08 | Sony Corp | 半導体装置およびその製造方法 |
| JP2002198496A (ja) * | 2000-12-26 | 2002-07-12 | Seiko Epson Corp | 強誘電体キャパシタおよびその製造方法ならびに強誘電体メモリ装置 |
| JP2004128471A (ja) * | 2002-08-07 | 2004-04-22 | Canon Inc | 不揮発メモリ装置 |
| JP4566578B2 (ja) * | 2003-02-24 | 2010-10-20 | 株式会社半導体エネルギー研究所 | 薄膜集積回路の作製方法 |
| JP5110414B2 (ja) * | 2003-03-19 | 2012-12-26 | 大日本印刷株式会社 | 有機双安定性素子、これを用いた有機双安定性メモリ装置、およびそれらの駆動方法 |
-
2006
- 2006-03-17 JP JP2006074366A patent/JP5008323B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2007013120A5 (enExample) | ||
| JP2006310799A5 (enExample) | ||
| JP2008277798A5 (enExample) | ||
| JP2008147640A5 (enExample) | ||
| JP2006303488A5 (enExample) | ||
| JP2010135777A5 (ja) | 半導体装置 | |
| EP1970956A3 (en) | Semiconductor device and manufacturing method thereof | |
| JP2009302520A5 (enExample) | ||
| JP2013254947A5 (ja) | 表示装置 | |
| JP2013201441A5 (enExample) | ||
| JP2018501650A5 (enExample) | ||
| JP2010192605A5 (enExample) | ||
| TW201613106A (en) | Semiconductor device and method for manufacturing the semiconductor device | |
| JP2010135778A5 (ja) | 半導体装置 | |
| JP2006245231A5 (enExample) | ||
| JP2009164587A5 (enExample) | ||
| JP2006236556A5 (enExample) | ||
| JP2008058966A5 (enExample) | ||
| TW201133707A (en) | Active device array substrate and fabricating method thereof | |
| WO2006098820A3 (en) | Method of forming a semiconductor device having a diffusion barrier stack and structure thereof | |
| JP2006005340A5 (enExample) | ||
| KR20160141589A (ko) | 배선 구조 및 이를 적용한 전자소자 | |
| JP2006221761A5 (enExample) | ||
| JP2007073976A5 (enExample) | ||
| TWI695483B (zh) | 記憶裝置及其製造方法 |