JP2010192605A5 - - Google Patents

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Publication number
JP2010192605A5
JP2010192605A5 JP2009034117A JP2009034117A JP2010192605A5 JP 2010192605 A5 JP2010192605 A5 JP 2010192605A5 JP 2009034117 A JP2009034117 A JP 2009034117A JP 2009034117 A JP2009034117 A JP 2009034117A JP 2010192605 A5 JP2010192605 A5 JP 2010192605A5
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JP
Japan
Prior art keywords
wiring
layer
semiconductor device
appendix
forming
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Application number
JP2009034117A
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English (en)
Japanese (ja)
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JP5502339B2 (ja
JP2010192605A (ja
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Priority to JP2009034117A priority Critical patent/JP5502339B2/ja
Priority claimed from JP2009034117A external-priority patent/JP5502339B2/ja
Priority to US12/656,728 priority patent/US8390124B2/en
Publication of JP2010192605A publication Critical patent/JP2010192605A/ja
Publication of JP2010192605A5 publication Critical patent/JP2010192605A5/ja
Application granted granted Critical
Publication of JP5502339B2 publication Critical patent/JP5502339B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009034117A 2009-02-17 2009-02-17 半導体装置及び半導体装置の製造方法 Expired - Fee Related JP5502339B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009034117A JP5502339B2 (ja) 2009-02-17 2009-02-17 半導体装置及び半導体装置の製造方法
US12/656,728 US8390124B2 (en) 2009-02-17 2010-02-16 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009034117A JP5502339B2 (ja) 2009-02-17 2009-02-17 半導体装置及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2010192605A JP2010192605A (ja) 2010-09-02
JP2010192605A5 true JP2010192605A5 (enExample) 2012-03-15
JP5502339B2 JP5502339B2 (ja) 2014-05-28

Family

ID=42559101

Family Applications (1)

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JP2009034117A Expired - Fee Related JP5502339B2 (ja) 2009-02-17 2009-02-17 半導体装置及び半導体装置の製造方法

Country Status (2)

Country Link
US (1) US8390124B2 (enExample)
JP (1) JP5502339B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5574639B2 (ja) * 2009-08-21 2014-08-20 三菱電機株式会社 半導体装置およびその製造方法
JP5731904B2 (ja) * 2011-05-25 2015-06-10 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US9343672B2 (en) * 2011-06-07 2016-05-17 Samsung Electronics Co., Ltd. Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices
US9577192B2 (en) * 2014-05-21 2017-02-21 Sony Semiconductor Solutions Corporation Method for forming a metal cap in a semiconductor memory device
JP6662289B2 (ja) * 2014-05-29 2020-03-11 日本電気株式会社 半導体装置およびその製造方法
KR20160073796A (ko) * 2014-12-17 2016-06-27 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
US10128438B2 (en) 2016-09-09 2018-11-13 Arm Limited CEM switching device
US10103327B2 (en) * 2016-09-14 2018-10-16 Arm Limited CEM switching device
US10121967B2 (en) 2016-11-29 2018-11-06 Arm Limited CEM switching device
CN108110022A (zh) * 2017-12-13 2018-06-01 德淮半导体有限公司 开关元件、及形成和使用开关元件的方法
US11636316B2 (en) 2018-01-31 2023-04-25 Cerfe Labs, Inc. Correlated electron switch elements for brain-based computing
KR20230106828A (ko) 2022-01-07 2023-07-14 삼성전자주식회사 반도체 장치 및 이의 제조 방법

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FR2771843B1 (fr) * 1997-11-28 2000-02-11 Sgs Thomson Microelectronics Transformateur en circuit integre
JP2001028397A (ja) 1999-05-10 2001-01-30 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2004031439A (ja) * 2002-06-21 2004-01-29 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP4555540B2 (ja) * 2002-07-08 2010-10-06 ルネサスエレクトロニクス株式会社 半導体装置
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JP4803995B2 (ja) * 2004-06-28 2011-10-26 富士通セミコンダクター株式会社 半導体装置及びその製造方法
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JP4963349B2 (ja) * 2005-01-14 2012-06-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5211483B2 (ja) * 2005-01-17 2013-06-12 日本電気株式会社 固体電解質スイッチング素子およびその製造方法ならびに集積回路
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US7692230B2 (en) * 2006-12-06 2010-04-06 Taiwan Semiconductor Manufacturing Co. Ltd. MRAM cell structure
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WO2008126197A1 (ja) * 2007-03-20 2008-10-23 Fujitsu Microelectronics Limited 半導体装置の製造方法
JP2008305888A (ja) * 2007-06-06 2008-12-18 Panasonic Corp 不揮発性記憶装置およびその製造方法
JP5424551B2 (ja) * 2007-11-07 2014-02-26 ローム株式会社 半導体装置
US8384061B2 (en) * 2007-11-29 2013-02-26 Panasonic Corporation Nonvolatile memory device and manufacturing method
CN101911295B (zh) * 2007-12-26 2012-05-30 松下电器产业株式会社 非易失性半导体存储装置和其制造方法
DE102008016431B4 (de) * 2008-03-31 2010-06-02 Advanced Micro Devices, Inc., Sunnyvale Metalldeckschicht mit erhöhtem Elektrodenpotential für kupferbasierte Metallgebiete in Halbleiterbauelementen sowie Verfahren zu ihrer Herstellung

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