JP5502339B2 - 半導体装置及び半導体装置の製造方法 - Google Patents

半導体装置及び半導体装置の製造方法 Download PDF

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Publication number
JP5502339B2
JP5502339B2 JP2009034117A JP2009034117A JP5502339B2 JP 5502339 B2 JP5502339 B2 JP 5502339B2 JP 2009034117 A JP2009034117 A JP 2009034117A JP 2009034117 A JP2009034117 A JP 2009034117A JP 5502339 B2 JP5502339 B2 JP 5502339B2
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Japan
Prior art keywords
wiring
layer
semiconductor device
metal
resistance change
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Expired - Fee Related
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JP2009034117A
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Japanese (ja)
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JP2010192605A5 (enExample
JP2010192605A (ja
Inventor
尚也 井上
喜宏 林
貴昭 金子
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009034117A priority Critical patent/JP5502339B2/ja
Priority to US12/656,728 priority patent/US8390124B2/en
Publication of JP2010192605A publication Critical patent/JP2010192605A/ja
Publication of JP2010192605A5 publication Critical patent/JP2010192605A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/028—Formation of switching materials, e.g. deposition of layers by conversion of electrode material, e.g. oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2009034117A 2009-02-17 2009-02-17 半導体装置及び半導体装置の製造方法 Expired - Fee Related JP5502339B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009034117A JP5502339B2 (ja) 2009-02-17 2009-02-17 半導体装置及び半導体装置の製造方法
US12/656,728 US8390124B2 (en) 2009-02-17 2010-02-16 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009034117A JP5502339B2 (ja) 2009-02-17 2009-02-17 半導体装置及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2010192605A JP2010192605A (ja) 2010-09-02
JP2010192605A5 JP2010192605A5 (enExample) 2012-03-15
JP5502339B2 true JP5502339B2 (ja) 2014-05-28

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JP2009034117A Expired - Fee Related JP5502339B2 (ja) 2009-02-17 2009-02-17 半導体装置及び半導体装置の製造方法

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US (1) US8390124B2 (enExample)
JP (1) JP5502339B2 (enExample)

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JP5574639B2 (ja) * 2009-08-21 2014-08-20 三菱電機株式会社 半導体装置およびその製造方法
JP5731904B2 (ja) * 2011-05-25 2015-06-10 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US9343672B2 (en) * 2011-06-07 2016-05-17 Samsung Electronics Co., Ltd. Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices
US9577192B2 (en) * 2014-05-21 2017-02-21 Sony Semiconductor Solutions Corporation Method for forming a metal cap in a semiconductor memory device
WO2015182074A1 (ja) * 2014-05-29 2015-12-03 日本電気株式会社 半導体装置およびその製造方法
KR20160073796A (ko) * 2014-12-17 2016-06-27 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
US10128438B2 (en) 2016-09-09 2018-11-13 Arm Limited CEM switching device
US10103327B2 (en) * 2016-09-14 2018-10-16 Arm Limited CEM switching device
US10121967B2 (en) 2016-11-29 2018-11-06 Arm Limited CEM switching device
CN108110022A (zh) * 2017-12-13 2018-06-01 德淮半导体有限公司 开关元件、及形成和使用开关元件的方法
US11636316B2 (en) 2018-01-31 2023-04-25 Cerfe Labs, Inc. Correlated electron switch elements for brain-based computing
KR102979386B1 (ko) 2022-01-07 2026-06-17 삼성전자주식회사 반도체 장치 및 이의 제조 방법

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FR2771843B1 (fr) * 1997-11-28 2000-02-11 Sgs Thomson Microelectronics Transformateur en circuit integre
JP2001028397A (ja) 1999-05-10 2001-01-30 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2004031439A (ja) * 2002-06-21 2004-01-29 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP4555540B2 (ja) * 2002-07-08 2010-10-06 ルネサスエレクトロニクス株式会社 半導体装置
US7115927B2 (en) * 2003-02-24 2006-10-03 Samsung Electronics Co., Ltd. Phase changeable memory devices
JP4634014B2 (ja) * 2003-05-22 2011-02-16 株式会社日立製作所 半導体記憶装置
WO2004107434A1 (ja) * 2003-05-29 2004-12-09 Nec Corporation 配線構造およびその製造方法
JP3808866B2 (ja) * 2003-12-05 2006-08-16 株式会社東芝 半導体装置
US7052932B2 (en) * 2004-02-24 2006-05-30 Chartered Semiconductor Manufacturing Ltd. Oxygen doped SiC for Cu barrier and etch stop layer in dual damascene fabrication
JP2005252027A (ja) * 2004-03-04 2005-09-15 Nec Electronics Corp 多層配線構造の半導体装置
JP4803995B2 (ja) * 2004-06-28 2011-10-26 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US7687830B2 (en) * 2004-09-17 2010-03-30 Ovonyx, Inc. Phase change memory with ovonic threshold switch
JP4963349B2 (ja) * 2005-01-14 2012-06-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7804085B2 (en) * 2005-01-17 2010-09-28 Nec Corporation Solid electrolyte switching element, and fabrication method of the solid electrolyte element, and integrated circuit
US7351656B2 (en) * 2005-01-21 2008-04-01 Kabushiki Kaihsa Toshiba Semiconductor device having oxidized metal film and manufacture method of the same
JP2006319028A (ja) * 2005-05-11 2006-11-24 Nec Corp スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子
JP2007042804A (ja) * 2005-08-02 2007-02-15 Renesas Technology Corp 半導体装置およびその製造方法
JP5263856B2 (ja) 2006-07-26 2013-08-14 独立行政法人産業技術総合研究所 スイッチング素子及びその製造方法
US7586175B2 (en) * 2006-10-23 2009-09-08 Samsung Electronics Co., Ltd. Semiconductor wafer having embedded electroplating current paths to provide uniform plating over wafer surface
US7642653B2 (en) * 2006-10-24 2010-01-05 Denso Corporation Semiconductor device, wiring of semiconductor device, and method of forming wiring
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WO2008078731A1 (ja) * 2006-12-27 2008-07-03 Nec Corporation 半導体装置及びその製造方法
WO2008126197A1 (ja) * 2007-03-20 2008-10-23 Fujitsu Microelectronics Limited 半導体装置の製造方法
JP2008305888A (ja) * 2007-06-06 2008-12-18 Panasonic Corp 不揮発性記憶装置およびその製造方法
JP5424551B2 (ja) * 2007-11-07 2014-02-26 ローム株式会社 半導体装置
JP4611443B2 (ja) * 2007-11-29 2011-01-12 パナソニック株式会社 不揮発性記憶装置およびその製造方法
JP5178743B2 (ja) * 2007-12-26 2013-04-10 パナソニック株式会社 不揮発性半導体記憶装置およびその製造方法
DE102008016431B4 (de) * 2008-03-31 2010-06-02 Advanced Micro Devices, Inc., Sunnyvale Metalldeckschicht mit erhöhtem Elektrodenpotential für kupferbasierte Metallgebiete in Halbleiterbauelementen sowie Verfahren zu ihrer Herstellung

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US8390124B2 (en) 2013-03-05
US20100207093A1 (en) 2010-08-19
JP2010192605A (ja) 2010-09-02

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