JP4963349B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4963349B2 JP4963349B2 JP2005007505A JP2005007505A JP4963349B2 JP 4963349 B2 JP4963349 B2 JP 4963349B2 JP 2005007505 A JP2005007505 A JP 2005007505A JP 2005007505 A JP2005007505 A JP 2005007505A JP 4963349 B2 JP4963349 B2 JP 4963349B2
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- wiring
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- 239000004065 semiconductor Substances 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000010410 layer Substances 0.000 claims description 158
- 239000010949 copper Substances 0.000 claims description 136
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 134
- 229910052802 copper Inorganic materials 0.000 claims description 134
- 229910052751 metal Inorganic materials 0.000 claims description 84
- 239000002184 metal Substances 0.000 claims description 84
- 238000000034 method Methods 0.000 claims description 33
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 30
- 239000005751 Copper oxide Substances 0.000 claims description 29
- 229910000431 copper oxide Inorganic materials 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 22
- 239000011229 interlayer Substances 0.000 claims description 22
- 238000007747 plating Methods 0.000 claims description 18
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 claims description 15
- 229910021360 copper silicide Inorganic materials 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000003963 antioxidant agent Substances 0.000 description 4
- 230000003078 antioxidant effect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- 229910020350 Na2WO4 Inorganic materials 0.000 description 1
- 229910021205 NaH2PO2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
図1乃至図4を参照して、本実施の形態に係る半導体装置の製造方法を説明する。
本発明の第2の実施の形態に係る半導体装置の製造方法を以下に説明する。
また、本発明のその他の実施の形態として、
第1の間隔で配置された少なくとも2本以上の銅を主成分とする配線を含む第1配線グループと、
前記第1の間隔よりも狭い第2の間隔で配置された少なくとも2本以上の銅を主成分とする配線を含む第2配線グループと、
前記第1配線グループの配線の表面に形成され、金属からなる第1キャップ層と、
前記第2配線グループの配線の表面に形成され、金属からなる第2キャップ層と、
を有し、
前記第1キャップ層の厚さが、前記第2キャップ層の厚さよりも厚いことを特徴とする半導体装置、
がある。
21〜25 配線層
200 多層配線層
3 層間絶縁膜
41〜44 トレンチ
51〜54 バリア層
6、61〜64 銅配線
7 ビア
81、82、84、811、812 金属キャップ層
83 銅シリサイド層
100、101 半導体装置
Claims (5)
- 層間絶縁膜のトレンチ内に銅を主成分とする第1配線と、銅を主成分とし前記第1配線よりも幅が狭い第2配線と、を形成する第1工程と、
CMPにより前記第1配線と前記第2配線を平坦化するとともに、前記第1配線と前記第2配線の表面に酸化銅を形成する第2工程と、
酸化銅を除去する成分を含むメッキ液に浸漬して、前記第1配線と前記第2配線の表面の酸化銅の除去を行うとともに、前記第1配線の表面にCoWP、CoSnP、CoP、CoWBのいずれかの金属からなる第1キャップ層を形成し、前記第2配線の表面にCoWP、CoSnP、CoP、CoWBのいずれかの金属からなる第2キャップ層を形成する、第3工程と、
を有し、
前記第1工程では、前記第1配線の銅の面方位が(200)となり、前記第2配線の銅の面方位が(111)となるようにめっきを行い、
前記第3工程では、前記第2キャップ層の形成を、前記第1キャップ層の形成よりも短時間で行うこと、
を特徴とする半導体装置の製造方法。 - 前記第2工程において、前記第1キャップ層の形成の開始に遅れて前記第2キャップ層の形成を開始し、前記第1および第2キャップ層の形成を実質的に同時に終了することにより行うこと、
を特徴とする請求項1に記載の半導体装置の製造方法。 - 前記第2工程において、前記第1配線の表面に形成される酸化銅膜の厚さが、前記第2配線の表面に形成される酸化銅膜の厚さよりも薄いこと、
を特徴とする請求項1または2に記載の半導体装置の製造方法。 - 前記第1工程は、
前記層間絶縁膜を形成する工程と、
前記層間絶縁膜に、第1トレンチと、前記第1トレンチよりも幅の狭い第2トレンチと、を形成する工程と、
前記第1トレンチの内壁にTaNを主成分とする第1バリア膜を形成する工程と、
前記第2トレンチの内壁に前記第1バリア膜よりも窒素濃度が低いTaNを主成分とする第2バリア膜を形成する工程と、
前記第1バリア膜上に前記第1配線を形成する工程と、
前記第2バリア膜上に前記第2配線を形成する工程と、
を有すること、
を特徴とする請求項1乃至請求項3のいずれか一に記載の半導体装置の製造方法。 - 層間絶縁膜のトレンチ内に銅を主成分とする第1配線と、銅を主成分とし前記第1配線よりも幅の狭い第2配線と、を形成する第1工程と、
CMPにより前記第1配線と前記第2配線を平坦化するとともに、前記第1配線と前記第2配線の表面に酸化銅を形成する第2工程と、
酸化銅を除去する成分を含むメッキ液に浸漬して、前記第1配線と前記第2配線の表面の酸化銅の除去を行うとともに、前記第1配線の表面の一部にCoWP、CoSnP、CoP、CoWBのいずれかの金属からなるキャップ層を形成する第3工程と、
前記第1配線の表面のうち、前記キャップ層で覆われていない部分に銅シリサイド層を形成し、前記第2配線の表面に銅シリサイド層を形成する第4工程と、
を有し、
前記第1工程では、前記第1配線の一部の銅の面方位が(200)となり、前記第1配線の他の部分の銅の面方位および前記第2配線の銅の面方位が(111)となるようにめっきを行い、
前記第3工程では、前記第1配線のうち銅の面方位が(200)である部分の表面に前記キャップ層を形成し、
前記第4工程では、前記第1配線のうち銅の面方位が(111)である部分の表面、および前記第2配線の表面に銅シリサイド層を形成することを特徴とする半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005007505A JP4963349B2 (ja) | 2005-01-14 | 2005-01-14 | 半導体装置の製造方法 |
US11/325,425 US7479700B2 (en) | 2005-01-14 | 2006-01-05 | Semiconductor device featuring copper wiring layers of different widths having metal capping layers of different thickness formed thereon, and method for manufacturing the same |
CN200610004851.9A CN100485919C (zh) | 2005-01-14 | 2006-01-16 | 半导体器件以及其制造方法 |
US12/325,670 US7741214B2 (en) | 2005-01-14 | 2008-12-01 | Method of forming a semiconductor device featuring copper wiring layers of different widths having metal capping layers of different thicknesses formed thereon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005007505A JP4963349B2 (ja) | 2005-01-14 | 2005-01-14 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006196744A JP2006196744A (ja) | 2006-07-27 |
JP4963349B2 true JP4963349B2 (ja) | 2012-06-27 |
Family
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JP2005007505A Expired - Fee Related JP4963349B2 (ja) | 2005-01-14 | 2005-01-14 | 半導体装置の製造方法 |
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---|---|
US (2) | US7479700B2 (ja) |
JP (1) | JP4963349B2 (ja) |
CN (1) | CN100485919C (ja) |
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US20090081870A1 (en) | 2009-03-26 |
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CN100485919C (zh) | 2009-05-06 |
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