JP3904578B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP3904578B2 JP3904578B2 JP2005112545A JP2005112545A JP3904578B2 JP 3904578 B2 JP3904578 B2 JP 3904578B2 JP 2005112545 A JP2005112545 A JP 2005112545A JP 2005112545 A JP2005112545 A JP 2005112545A JP 3904578 B2 JP3904578 B2 JP 3904578B2
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- 239000004065 semiconductor Substances 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 149
- 239000002184 metal Substances 0.000 claims description 149
- 238000000034 method Methods 0.000 claims description 100
- 238000009792 diffusion process Methods 0.000 claims description 65
- 230000004888 barrier function Effects 0.000 claims description 43
- 230000002265 prevention Effects 0.000 claims description 41
- 239000010949 copper Substances 0.000 claims description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 36
- 229910052802 copper Inorganic materials 0.000 claims description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
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- 238000001039 wet etching Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 description 40
- 230000008569 process Effects 0.000 description 33
- 230000003405 preventing effect Effects 0.000 description 18
- 239000003795 chemical substances by application Substances 0.000 description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
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- 238000001312 dry etching Methods 0.000 description 4
- 150000007524 organic acids Chemical class 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
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- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
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- 239000000203 mixture Substances 0.000 description 3
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- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
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- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- BJFLSHMHTPAZHO-UHFFFAOYSA-N benzotriazole Chemical compound [CH]1C=CC=C2N=NN=C21 BJFLSHMHTPAZHO-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
次に、図7(b)に示すように、溝5の内面及び絶縁膜3上にバリア膜7をスパッタリング法などにより形成する。
次に、溝5を充填するようにバリア膜7上に、たとえば銅(Cu)等の導電性金属層9をめっき法などにより形成する。
さらに図7(c)に示すように、CMP(Chemical Mechanical Polishing 、化学的機械研磨)法により、バリア膜7上の不要な導電性金属層9を除去する。
次に、図7(d)に示すように、絶縁膜3上のバリア膜7を除去することにより、埋め込み配線を形成する。
最後に、図7(e)に示すように、金属拡散防止膜13をCVD法などにより形成して、半導体基板上に導電性金属の埋め込み配線を形成する。
なお、ダマシン法には大別してシングルダマシン(Single Damascene)法とデュアルダマシン(Dual Damascene)法がある。シングルダマシン法は、図7(a)〜(e)にて説明したように埋め込み配線を形成する方法であり、デュアルダマシン法は、図8に示すように、絶縁膜3に配線用の溝5および下層配線への接続を行うための孔5aを形成した後、シングルダマシン法と同様の方法をとることにより、埋込み配線と、下層配線への接続孔を同時に形成する方法である。
従って、配線間のTDDB寿命劣化を防止することが可能となり、配線間の絶縁破壊耐性の向上した、高い信頼性をもつ埋め込み導電性金属配線の形成が可能となる。
具体的には、工程(4)は、例えば、前記絶縁膜上の導電性金属層を除去し、前記絶縁膜上のバリア膜及び前記溝内の導電性金属層の一部を除去する工程を備える方法によって行うことができる(第1実施形態に対応)。工程(4)は、前記絶縁膜上の導電性金属層及び前記溝内の導電性金属層の一部を除去し、前記絶縁膜上のバリア膜を除去する工程を備える方法で行ってもよい(第2実施形態に対応)。前者の方法では、バリア膜を除去する際に、導電性金属層の表面が前記絶縁膜の表面との間の段差(以下、単に「段差」ともいう。)を形成し、後者の方法では、絶縁膜上の導電性金属層を除去する際に段差を形成する。何れの方法も、例えば、2度のCMP工程により行うことでき、この2度のCMP工程は、スラリーの種類を変える等によって連続的に行うことができる。
(第1実施形態)
図1は、本発明の第1実施形態による半導体装置の製造方法を説明するための断面図である。
x>70(nm) かつ x<2y−40(nm)
である。図4の33は、この2式を満たすxとyの組み合わせを示したものである。なお、これらから容易に判るように、y>55(nm)の場合のみ解が存在する。
図5は、本発明の第2実施形態による半導体装置の製造方法を説明するための断面図である。本実施形態においては、図5(a)〜(b)に示す導電性金属層9を形成する工程までと、および図5(e)〜(f)に示す金属拡散防止膜13を形成する工程以降は、第1実施形態による構成および形成方法とそれぞれ同様である。
次に、図5(d)に示すように、第2のCMP工程として、絶縁膜3上のバリア膜7を除去する。これ以外の構成および形成方法は、第1実施形態と同様である。
第2のCMP工程においては、例えば、シリカ砥粒を含む研磨剤を流量200ml/minにて用い、研磨圧力21kPa、定盤回転数100rpm、ウエハ回転数93rpmとして銅を100nm/min、バリア膜として用いたタンタルおよびタンタル窒化膜を100nm/min、絶縁膜を10nm/min以下、の研磨速度にて除去し、絶縁膜3が露出された時点を研磨終点とする。
図6は、本発明の第3実施形態による半導体装置の製造方法を説明するための断面図である。本実施形態においては、図6(a)〜(b)に示すように、導電性金属層9を形成する工程までと、および図6(f)〜(g)に示すように、金属拡散防止膜13を形成する工程以降は、第1実施形態による構成および形成方法とそれぞれ同様である。
次に、図6(d)に示すように、第2のCMP工程として、絶縁膜3上のバリア膜7を除去する。
3 絶縁膜
3a 絶縁膜表面
5 配線用溝
7 バリア膜
9 導電性金属層
13 金属拡散防止膜
15 第3のCMP工程直前のウエハ表面
17 第3のCMP工程後のウエハ表面(CMP研磨面)
21 銅
31 銅の検出下限界濃度
33 望ましいxとyの組み合わせを示す領域
x 導電性金属層の表面と絶縁膜表面との段差
y 金属拡散防止膜の堆積膜厚
z 第3のCMP工程で除去される絶縁膜の膜厚
a 第3のCMP工程における金属拡散防止膜と絶縁膜の除去膜厚の和
c 第3のCMP工程における配線用溝内の金属拡散防止膜の残膜厚
Claims (8)
- (1)半導体基板上に形成された絶縁膜に溝を形成し、
(2)前記溝の内面及び前記絶縁膜上にバリア膜を形成し、
(3)前記溝を充填するようにバリア膜上に銅層を形成し、
(4)銅層の表面が前記絶縁膜の表面よりも低くなるように、前記絶縁膜上の銅層及びバリア膜並びに前記溝内の銅層の一部を除去し、
(5)前記絶縁膜及び銅層上に金属拡散防止膜を形成し、
(6)銅層上の金属拡散防止膜の少なくとも一部を残すように、前記絶縁膜上の金属拡散防止膜と前記絶縁膜の一部を除去する工程を含み、
工程(6)は、前記絶縁膜を50nm以上除去するように行われ、
前記絶縁膜は、酸化シリコンからなることを特徴とする半導体装置の製造方法。 - 工程(4)は、CMP法により行われる請求項1に記載の方法。
- 工程(4)は、
前記絶縁膜上の銅層を除去し、
前記絶縁膜上のバリア膜及び前記溝内の銅層の一部を除去する工程を備える請求項2に記載の方法。 - 工程(4)は、
前記絶縁膜上の銅層及び前記溝内の銅層の一部を除去し、
前記絶縁膜上のバリア膜を除去する工程を備える請求項2に記載の方法。 - 工程(4)は、
CMP法により前記絶縁膜上の銅層及びバリア膜を除去し、
エッチングにより前記溝内の銅層の一部を除去する工程を備える請求項1に記載の方法。 - エッチングは、ウェットエッチングからなる請求項5に記載の方法。
- 工程(4)は、銅層表面と前記絶縁膜表面の段差が70nm以上になるように行われる請求項1に記載の方法。
- 工程(4)は、前記段差が、金属拡散防止膜の形成膜厚の2倍から40nmを差し引いたものより小さくなるように行われる請求項7に記載の方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005112545A JP3904578B2 (ja) | 2005-04-08 | 2005-04-08 | 半導体装置の製造方法 |
KR1020077022947A KR20070112469A (ko) | 2005-04-08 | 2006-03-09 | 반도체 장치 및 그 제조 방법 |
PCT/JP2006/304622 WO2006112202A1 (ja) | 2005-04-08 | 2006-03-09 | 半導体装置及びその製造方法 |
US11/887,946 US20090045519A1 (en) | 2005-04-08 | 2006-03-09 | Semiconductor Device and Method of Producing the Same |
TW095111201A TW200723444A (en) | 2005-04-08 | 2006-03-30 | Semiconductor device and process for producing the same |
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JP2005112545A JP3904578B2 (ja) | 2005-04-08 | 2005-04-08 | 半導体装置の製造方法 |
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JP3904578B2 true JP3904578B2 (ja) | 2007-04-11 |
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JP2005112545A Expired - Fee Related JP3904578B2 (ja) | 2005-04-08 | 2005-04-08 | 半導体装置の製造方法 |
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US (1) | US20090045519A1 (ja) |
JP (1) | JP3904578B2 (ja) |
KR (1) | KR20070112469A (ja) |
TW (1) | TW200723444A (ja) |
WO (1) | WO2006112202A1 (ja) |
Families Citing this family (10)
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JP5015696B2 (ja) * | 2006-09-04 | 2012-08-29 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法及び製造装置 |
US20090200668A1 (en) * | 2008-02-07 | 2009-08-13 | International Business Machines Corporation | Interconnect structure with high leakage resistance |
JP2009289869A (ja) * | 2008-05-28 | 2009-12-10 | Shinko Electric Ind Co Ltd | 半導体基板の製造方法および半導体基板 |
KR101590495B1 (ko) | 2008-05-29 | 2016-02-01 | 갤럭시 바이오테크, 엘엘씨 | 염기성 섬유모세포 성장 인자에 대한 모노클로날 항체 |
US7803704B2 (en) * | 2008-08-22 | 2010-09-28 | Chartered Semiconductor Manufacturing, Ltd. | Reliable interconnects |
US9177917B2 (en) | 2010-08-20 | 2015-11-03 | Micron Technology, Inc. | Semiconductor constructions |
US9048170B2 (en) * | 2010-11-09 | 2015-06-02 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment |
US8669176B1 (en) * | 2012-08-28 | 2014-03-11 | Globalfoundries Inc. | BEOL integration scheme for copper CMP to prevent dendrite formation |
US10596782B2 (en) * | 2015-06-04 | 2020-03-24 | Sumitomo Electric Industries, Ltd. | Substrate for printed circuit board and printed circuit board |
JP2017139375A (ja) * | 2016-02-04 | 2017-08-10 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
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KR0138305B1 (ko) * | 1994-11-30 | 1998-06-01 | 김광호 | 반도체소자 배선형성방법 |
JPH11111843A (ja) * | 1997-10-01 | 1999-04-23 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP2005072238A (ja) * | 2003-08-25 | 2005-03-17 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2005079434A (ja) * | 2003-09-02 | 2005-03-24 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
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2006
- 2006-03-09 US US11/887,946 patent/US20090045519A1/en not_active Abandoned
- 2006-03-09 KR KR1020077022947A patent/KR20070112469A/ko not_active Application Discontinuation
- 2006-03-09 WO PCT/JP2006/304622 patent/WO2006112202A1/ja active Application Filing
- 2006-03-30 TW TW095111201A patent/TW200723444A/zh unknown
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KR20070112469A (ko) | 2007-11-26 |
WO2006112202A1 (ja) | 2006-10-26 |
JP2006294815A (ja) | 2006-10-26 |
US20090045519A1 (en) | 2009-02-19 |
TW200723444A (en) | 2007-06-16 |
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