TW200723444A - Semiconductor device and process for producing the same - Google Patents

Semiconductor device and process for producing the same

Info

Publication number
TW200723444A
TW200723444A TW095111201A TW95111201A TW200723444A TW 200723444 A TW200723444 A TW 200723444A TW 095111201 A TW095111201 A TW 095111201A TW 95111201 A TW95111201 A TW 95111201A TW 200723444 A TW200723444 A TW 200723444A
Authority
TW
Taiwan
Prior art keywords
insulating film
electrically conductive
conductive metal
metal layer
film
Prior art date
Application number
TW095111201A
Other languages
English (en)
Inventor
Noritaka Kamikubo
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200723444A publication Critical patent/TW200723444A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76883—Post-treatment or after-treatment of the conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW095111201A 2005-04-08 2006-03-30 Semiconductor device and process for producing the same TW200723444A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005112545A JP3904578B2 (ja) 2005-04-08 2005-04-08 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW200723444A true TW200723444A (en) 2007-06-16

Family

ID=37114936

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095111201A TW200723444A (en) 2005-04-08 2006-03-30 Semiconductor device and process for producing the same

Country Status (5)

Country Link
US (1) US20090045519A1 (zh)
JP (1) JP3904578B2 (zh)
KR (1) KR20070112469A (zh)
TW (1) TW200723444A (zh)
WO (1) WO2006112202A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5015696B2 (ja) * 2006-09-04 2012-08-29 ルネサスエレクトロニクス株式会社 半導体装置の製造方法及び製造装置
US20090200668A1 (en) * 2008-02-07 2009-08-13 International Business Machines Corporation Interconnect structure with high leakage resistance
JP2009289869A (ja) * 2008-05-28 2009-12-10 Shinko Electric Ind Co Ltd 半導体基板の製造方法および半導体基板
ES2633297T3 (es) 2008-05-29 2017-09-20 Galaxy Biotech, Llc Anticuerpos monoclonales al factor básico de crecimiento de fibroblastos
US7803704B2 (en) * 2008-08-22 2010-09-28 Chartered Semiconductor Manufacturing, Ltd. Reliable interconnects
US9177917B2 (en) * 2010-08-20 2015-11-03 Micron Technology, Inc. Semiconductor constructions
US9048170B2 (en) * 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
US8669176B1 (en) * 2012-08-28 2014-03-11 Globalfoundries Inc. BEOL integration scheme for copper CMP to prevent dendrite formation
US10596782B2 (en) * 2015-06-04 2020-03-24 Sumitomo Electric Industries, Ltd. Substrate for printed circuit board and printed circuit board
JP2017139375A (ja) * 2016-02-04 2017-08-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0138305B1 (ko) * 1994-11-30 1998-06-01 김광호 반도체소자 배선형성방법
JPH11111843A (ja) * 1997-10-01 1999-04-23 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2005072238A (ja) * 2003-08-25 2005-03-17 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2005079434A (ja) * 2003-09-02 2005-03-24 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JP2006294815A (ja) 2006-10-26
US20090045519A1 (en) 2009-02-19
JP3904578B2 (ja) 2007-04-11
WO2006112202A1 (ja) 2006-10-26
KR20070112469A (ko) 2007-11-26

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