JP2005525000A5 - - Google Patents
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- Publication number
- JP2005525000A5 JP2005525000A5 JP2004508382A JP2004508382A JP2005525000A5 JP 2005525000 A5 JP2005525000 A5 JP 2005525000A5 JP 2004508382 A JP2004508382 A JP 2004508382A JP 2004508382 A JP2004508382 A JP 2004508382A JP 2005525000 A5 JP2005525000 A5 JP 2005525000A5
- Authority
- JP
- Japan
- Prior art keywords
- continuous opening
- current carrying
- carrying layer
- forming
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000004020 conductor Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/141,714 | 2002-05-09 | ||
| US10/141,714 US6815820B2 (en) | 2002-05-09 | 2002-05-09 | Method for forming a semiconductor interconnect with multiple thickness |
| PCT/US2003/012089 WO2003100825A2 (en) | 2002-05-09 | 2003-04-15 | Multiple thickness semiconductor interconnect and method therefor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005525000A JP2005525000A (ja) | 2005-08-18 |
| JP2005525000A5 true JP2005525000A5 (enExample) | 2006-05-11 |
| JP4932153B2 JP4932153B2 (ja) | 2012-05-16 |
Family
ID=29399731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004508382A Expired - Fee Related JP4932153B2 (ja) | 2002-05-09 | 2003-04-15 | 複数膜厚を有する半導体相互接続の形成方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6815820B2 (enExample) |
| JP (1) | JP4932153B2 (enExample) |
| KR (1) | KR101045473B1 (enExample) |
| CN (1) | CN100397613C (enExample) |
| AU (1) | AU2003247343A1 (enExample) |
| TW (1) | TWI293493B (enExample) |
| WO (1) | WO2003100825A2 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100558493B1 (ko) * | 2003-12-03 | 2006-03-07 | 삼성전자주식회사 | 반도체 기억소자의 배선 형성방법 |
| US7784010B1 (en) * | 2004-06-01 | 2010-08-24 | Pulsic Limited | Automatic routing system with variable width interconnect |
| DE102006025405B4 (de) * | 2006-05-31 | 2018-03-29 | Globalfoundries Inc. | Verfahren zur Herstellung einer Metallisierungsschicht eines Halbleiterbauelements mit unterschiedlich dicken Metallleitungen |
| CN100452063C (zh) * | 2006-06-07 | 2009-01-14 | 清华大学 | 硅集成电路衬底多频率点下综合耦合参数的快速提取方法 |
| US7566651B2 (en) | 2007-03-28 | 2009-07-28 | International Business Machines Corporation | Low contact resistance metal contact |
| US8026170B2 (en) * | 2007-09-26 | 2011-09-27 | Sandisk Technologies Inc. | Method of forming a single-layer metal conductors with multiple thicknesses |
| US8304863B2 (en) * | 2010-02-09 | 2012-11-06 | International Business Machines Corporation | Electromigration immune through-substrate vias |
| US20120299187A1 (en) * | 2011-05-27 | 2012-11-29 | Broadcom Corporation | Aluminum Bond Pad With Trench Thinning for Fine Pitch Ultra-Thick Aluminum Products |
| US8906801B2 (en) * | 2012-03-12 | 2014-12-09 | GlobalFoundries, Inc. | Processes for forming integrated circuits and integrated circuits formed thereby |
| US8813012B2 (en) * | 2012-07-16 | 2014-08-19 | Synopsys, Inc. | Self-aligned via interconnect using relaxed patterning exposure |
| KR102385454B1 (ko) * | 2015-09-24 | 2022-04-08 | 엘지디스플레이 주식회사 | 휘도가 개선된 표시장치 |
| CN107481918B (zh) * | 2016-06-08 | 2020-04-07 | 中芯国际集成电路制造(上海)有限公司 | 芯片的制备方法及刻蚀方法 |
| US10651201B2 (en) | 2017-04-05 | 2020-05-12 | Samsung Electronics Co., Ltd. | Integrated circuit including interconnection and method of fabricating the same, the interconnection including a pattern shaped and/or a via disposed for mitigating electromigration |
| US11705414B2 (en) * | 2017-10-05 | 2023-07-18 | Texas Instruments Incorporated | Structure and method for semiconductor packaging |
| KR102442096B1 (ko) | 2017-11-22 | 2022-09-07 | 삼성전자주식회사 | 반도체 장치 |
| EP3671821B1 (en) * | 2018-12-19 | 2025-03-19 | IMEC vzw | Interconnection system of an integrated circuit |
| US12334392B2 (en) * | 2019-08-07 | 2025-06-17 | Intel Corporation | Multi-height interconnect trenches for resistance and capacitance optimization |
| US11195792B2 (en) | 2020-01-10 | 2021-12-07 | International Business Machines Corporation | Top via stack |
| US20230275018A1 (en) * | 2022-02-25 | 2023-08-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal lines of hybrid heights |
| CN119581415B (zh) * | 2025-01-26 | 2025-05-13 | 全智芯(上海)技术有限公司 | 用于调整互连线结构的方法、设备和介质 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5258328A (en) | 1992-03-16 | 1993-11-02 | Kabushiki Kaisha Toshiba | Method of forming multilayered wiring structure of semiconductor device |
| JPH0685071A (ja) * | 1992-08-31 | 1994-03-25 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5286675A (en) * | 1993-04-14 | 1994-02-15 | Industrial Technology Research Institute | Blanket tungsten etchback process using disposable spin-on-glass |
| US5539255A (en) | 1995-09-07 | 1996-07-23 | International Business Machines Corporation | Semiconductor structure having self-aligned interconnection metallization formed from a single layer of metal |
| JP2809200B2 (ja) * | 1996-06-03 | 1998-10-08 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3869089B2 (ja) * | 1996-11-14 | 2007-01-17 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
| JP2923912B2 (ja) * | 1996-12-25 | 1999-07-26 | 日本電気株式会社 | 半導体装置 |
| US6107189A (en) * | 1997-03-05 | 2000-08-22 | Micron Technology, Inc. | Method of making a local interconnect using spacer-masked contact etch |
| US6577011B1 (en) * | 1997-07-10 | 2003-06-10 | International Business Machines Corporation | Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same |
| US6097092A (en) * | 1998-04-22 | 2000-08-01 | International Business Machines Corporation | Freestanding multilayer IC wiring structure |
| US6258727B1 (en) * | 1998-07-31 | 2001-07-10 | International Business Machines Corporation | Method of forming metal lands at the M0 level with a non selective chemistry |
| JP3631380B2 (ja) * | 1998-08-28 | 2005-03-23 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US6225207B1 (en) * | 1998-10-01 | 2001-05-01 | Applied Materials, Inc. | Techniques for triple and quadruple damascene fabrication |
| KR20000027538A (ko) * | 1998-10-28 | 2000-05-15 | 김영환 | 반도체 소자의 금속 배선 형성 방법 |
| FR2786609B1 (fr) | 1998-11-26 | 2003-10-17 | St Microelectronics Sa | Circuit integre a capacite interlignes reduite et procede de fabrication associe |
| US6261873B1 (en) * | 1999-04-29 | 2001-07-17 | International Business Machines Corporation | Pedestal fuse |
| JP2001068474A (ja) * | 1999-08-24 | 2001-03-16 | Nec Ic Microcomput Syst Ltd | 半導体装置の製造方法 |
| US6361402B1 (en) | 1999-10-26 | 2002-03-26 | International Business Machines Corporation | Method for planarizing photoresist |
| US6451697B1 (en) | 2000-04-06 | 2002-09-17 | Applied Materials, Inc. | Method for abrasive-free metal CMP in passivation domain |
| US20020072217A1 (en) * | 2000-12-13 | 2002-06-13 | Macronix International Co., Ltd. | Method for improving contact reliability in semiconductor devices |
| US6638871B2 (en) * | 2002-01-10 | 2003-10-28 | United Microlectronics Corp. | Method for forming openings in low dielectric constant material layer |
-
2002
- 2002-05-09 US US10/141,714 patent/US6815820B2/en not_active Expired - Lifetime
-
2003
- 2003-04-15 CN CNB038104946A patent/CN100397613C/zh not_active Expired - Fee Related
- 2003-04-15 WO PCT/US2003/012089 patent/WO2003100825A2/en not_active Ceased
- 2003-04-15 AU AU2003247343A patent/AU2003247343A1/en not_active Abandoned
- 2003-04-15 KR KR1020047017954A patent/KR101045473B1/ko not_active Expired - Fee Related
- 2003-04-15 JP JP2004508382A patent/JP4932153B2/ja not_active Expired - Fee Related
- 2003-05-07 TW TW092112456A patent/TWI293493B/zh not_active IP Right Cessation
-
2004
- 2004-09-22 US US10/946,675 patent/US7176574B2/en not_active Expired - Fee Related
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