JP2004165559A5 - - Google Patents

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Publication number
JP2004165559A5
JP2004165559A5 JP2002332093A JP2002332093A JP2004165559A5 JP 2004165559 A5 JP2004165559 A5 JP 2004165559A5 JP 2002332093 A JP2002332093 A JP 2002332093A JP 2002332093 A JP2002332093 A JP 2002332093A JP 2004165559 A5 JP2004165559 A5 JP 2004165559A5
Authority
JP
Japan
Prior art keywords
metal electrode
wiring layer
electrode
dielectric film
lower metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2002332093A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004165559A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002332093A priority Critical patent/JP2004165559A/ja
Priority claimed from JP2002332093A external-priority patent/JP2004165559A/ja
Priority to US10/712,377 priority patent/US20040135189A1/en
Priority to CNA200310113718A priority patent/CN1501500A/zh
Publication of JP2004165559A publication Critical patent/JP2004165559A/ja
Publication of JP2004165559A5 publication Critical patent/JP2004165559A5/ja
Abandoned legal-status Critical Current

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JP2002332093A 2002-11-15 2002-11-15 半導体装置 Abandoned JP2004165559A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002332093A JP2004165559A (ja) 2002-11-15 2002-11-15 半導体装置
US10/712,377 US20040135189A1 (en) 2002-11-15 2003-11-14 Semiconductor device
CNA200310113718A CN1501500A (zh) 2002-11-15 2003-11-17 半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002332093A JP2004165559A (ja) 2002-11-15 2002-11-15 半導体装置

Publications (2)

Publication Number Publication Date
JP2004165559A JP2004165559A (ja) 2004-06-10
JP2004165559A5 true JP2004165559A5 (enExample) 2005-03-03

Family

ID=32697490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002332093A Abandoned JP2004165559A (ja) 2002-11-15 2002-11-15 半導体装置

Country Status (3)

Country Link
US (1) US20040135189A1 (enExample)
JP (1) JP2004165559A (enExample)
CN (1) CN1501500A (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7107081B1 (en) 2001-10-18 2006-09-12 Iwao Fujisaki Communication device
US7348654B2 (en) * 2002-12-09 2008-03-25 Taiwan Semiconductor Manufacturing Co., Ltd Capacitor and inductor scheme with e-fuse application
US8090402B1 (en) 2003-09-26 2012-01-03 Iwao Fujisaki Communication device
US7105400B2 (en) * 2003-09-30 2006-09-12 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor device
JP2005150457A (ja) * 2003-11-17 2005-06-09 Toshiba Corp 磁気記憶装置
US8121635B1 (en) 2003-11-22 2012-02-21 Iwao Fujisaki Communication device
US7118925B2 (en) * 2004-12-10 2006-10-10 Texas Instruments Incorporated Fabrication of a ferromagnetic inductor core and capacitor electrode in a single photo mask step
KR100625124B1 (ko) 2005-08-30 2006-09-15 삼성전자주식회사 스택형 반도체 장치의 제조 방법
CN1953181B (zh) * 2005-10-21 2010-10-13 松下电器产业株式会社 模拟数字转换器
JP2007294848A (ja) * 2006-03-30 2007-11-08 Eudyna Devices Inc キャパシタおよび電子回路
JP2008112956A (ja) 2006-08-03 2008-05-15 Sony Corp キャパシタおよびその製造方法、ならびに、半導体デバイスおよび液晶表示装置
US20080308885A1 (en) * 2007-06-12 2008-12-18 United Microelectronics Corp. Magnetic random access memory and fabricating method thereof
US20100123993A1 (en) * 2008-02-13 2010-05-20 Herzel Laor Atomic layer deposition process for manufacture of battery electrodes, capacitors, resistors, and catalyzers
JP5104403B2 (ja) 2008-02-29 2012-12-19 富士通株式会社 キャパシタ
US8340726B1 (en) 2008-06-30 2012-12-25 Iwao Fujisaki Communication device
IT1397232B1 (it) * 2009-12-30 2013-01-04 St Microelectronics Srl Condensatore integrato a piatti invertiti
IT1397231B1 (it) * 2009-12-30 2013-01-04 St Microelectronics Srl Condensatore mim con piatto ad elevato punto di fusione
US8906773B2 (en) * 2012-12-12 2014-12-09 Freescale Semiconductor, Inc. Integrated circuits including integrated passive devices and methods of manufacture thereof
CN106865486B (zh) * 2015-12-10 2019-04-26 中芯国际集成电路制造(上海)有限公司 电容式指纹传感器及其形成方法和电子产品
JP6710096B2 (ja) * 2016-04-28 2020-06-17 ラピスセミコンダクタ株式会社 半導体装置の製造方法、及び半導体装置
US10950688B2 (en) * 2019-02-21 2021-03-16 Kemet Electronics Corporation Packages for power modules with integrated passives
JP7244394B2 (ja) * 2019-09-18 2023-03-22 株式会社東芝 デジタルアイソレータ
KR102766375B1 (ko) 2020-02-14 2025-02-13 삼성전자주식회사 반도체 메모리 소자
US11848352B2 (en) * 2021-02-22 2023-12-19 Taiwan Semiconductor Manufacturing Company Limited Metal-insulator-metal capacitors and methods of forming the same
CN113905507B (zh) * 2021-10-13 2023-09-08 北京华镁钛科技有限公司 低翘曲度pcb过渡结构

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3181406B2 (ja) * 1992-02-18 2001-07-03 松下電器産業株式会社 半導体記憶装置
JP3853406B2 (ja) * 1995-10-27 2006-12-06 エルピーダメモリ株式会社 半導体集積回路装置及び当該装置の製造方法
JP3749776B2 (ja) * 1997-02-28 2006-03-01 株式会社東芝 半導体装置
JP3878724B2 (ja) * 1997-10-14 2007-02-07 株式会社ルネサステクノロジ 半導体集積回路装置およびその製造方法
US6316801B1 (en) * 1998-03-04 2001-11-13 Nec Corporation Semiconductor device having capacitive element structure and multilevel interconnection structure and method of fabricating the same
JP3236262B2 (ja) * 1998-06-16 2001-12-10 松下電器産業株式会社 強誘電体メモリ装置
JP2000150810A (ja) * 1998-11-17 2000-05-30 Toshiba Microelectronics Corp 半導体装置及びその製造方法
JP3745553B2 (ja) * 1999-03-04 2006-02-15 富士通株式会社 強誘電体キャパシタ、半導体装置の製造方法
DE19959711A1 (de) * 1999-12-10 2001-06-21 Infineon Technologies Ag Verfahren zur Herstellung einer strukturierten Metallschicht
JP2001196413A (ja) * 2000-01-12 2001-07-19 Mitsubishi Electric Corp 半導体装置、該半導体装置の製造方法、ｃｍｐ装置、及びｃｍｐ方法
JP2001217397A (ja) * 2000-02-02 2001-08-10 Nec Corp 半導体装置とその製造方法
JP4979154B2 (ja) * 2000-06-07 2012-07-18 ルネサスエレクトロニクス株式会社 半導体装置
JP3953715B2 (ja) * 2000-07-31 2007-08-08 富士通株式会社 半導体装置及びその製造方法
JP2002164428A (ja) * 2000-11-29 2002-06-07 Hitachi Ltd 半導体装置およびその製造方法
JP2002324850A (ja) * 2001-04-25 2002-11-08 Mitsubishi Electric Corp 半導体メモリ装置およびその製造方法
JP4575616B2 (ja) * 2001-04-26 2010-11-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP3863391B2 (ja) * 2001-06-13 2006-12-27 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP2003007854A (ja) * 2001-06-22 2003-01-10 Nec Corp 半導体記憶装置及びその製造方法
JP2003007855A (ja) * 2001-06-26 2003-01-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2004119832A (ja) * 2002-09-27 2004-04-15 Toshiba Corp 半導体装置
JP3822569B2 (ja) * 2003-02-28 2006-09-20 株式会社東芝 半導体装置およびその製造方法
JP3842745B2 (ja) * 2003-02-28 2006-11-08 株式会社東芝 半導体装置およびその製造方法

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