IT1397231B1 - Condensatore mim con piatto ad elevato punto di fusione - Google Patents
Condensatore mim con piatto ad elevato punto di fusioneInfo
- Publication number
- IT1397231B1 IT1397231B1 ITMI2009A002353A ITMI20092353A IT1397231B1 IT 1397231 B1 IT1397231 B1 IT 1397231B1 IT MI2009A002353 A ITMI2009A002353 A IT MI2009A002353A IT MI20092353 A ITMI20092353 A IT MI20092353A IT 1397231 B1 IT1397231 B1 IT 1397231B1
- Authority
- IT
- Italy
- Prior art keywords
- mim
- condenser
- plate
- high melt
- melt point
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI2009A002353A IT1397231B1 (it) | 2009-12-30 | 2009-12-30 | Condensatore mim con piatto ad elevato punto di fusione |
US12/972,606 US8916436B2 (en) | 2009-12-30 | 2010-12-20 | MIM capacitor with plate having high melting point |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI2009A002353A IT1397231B1 (it) | 2009-12-30 | 2009-12-30 | Condensatore mim con piatto ad elevato punto di fusione |
Publications (2)
Publication Number | Publication Date |
---|---|
ITMI20092353A1 ITMI20092353A1 (it) | 2011-06-30 |
IT1397231B1 true IT1397231B1 (it) | 2013-01-04 |
Family
ID=42246131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI2009A002353A IT1397231B1 (it) | 2009-12-30 | 2009-12-30 | Condensatore mim con piatto ad elevato punto di fusione |
Country Status (2)
Country | Link |
---|---|
US (1) | US8916436B2 (it) |
IT (1) | IT1397231B1 (it) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2509296B (en) | 2012-09-25 | 2016-10-26 | Cambridge Silicon Radio Ltd | Composite reconstituted wafer structures |
US9666661B2 (en) * | 2015-09-08 | 2017-05-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Coplanar metal-insulator-metal capacitive structure |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3149817B2 (ja) * | 1997-05-30 | 2001-03-26 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US6441419B1 (en) * | 1998-03-31 | 2002-08-27 | Lsi Logic Corporation | Encapsulated-metal vertical-interdigitated capacitor and damascene method of manufacturing same |
US6281142B1 (en) * | 1999-06-04 | 2001-08-28 | Micron Technology, Inc. | Dielectric cure for reducing oxygen vacancies |
US20060014384A1 (en) * | 2002-06-05 | 2006-01-19 | Jong-Cheol Lee | Method of forming a layer and forming a capacitor of a semiconductor device having the same layer |
JP2004165559A (ja) * | 2002-11-15 | 2004-06-10 | Toshiba Corp | 半導体装置 |
JP2005210076A (ja) * | 2003-12-25 | 2005-08-04 | Semiconductor Leading Edge Technologies Inc | 窒化珪素膜の成膜方法及びこの方法を使用する半導体装置の製造方法 |
US7160772B2 (en) * | 2005-02-23 | 2007-01-09 | International Business Machines Corporation | Structure and method for integrating MIM capacitor in BEOL wiring levels |
KR100698089B1 (ko) * | 2005-12-29 | 2007-03-23 | 동부일렉트로닉스 주식회사 | 커패시터를 갖는 반도체 소자 및 이의 제조방법 |
KR20080018685A (ko) * | 2006-08-25 | 2008-02-28 | 삼성전자주식회사 | 반도체 배선 구조, 커패시터를 포함하는 반도체 소자 및 그제조방법 |
US8242551B2 (en) * | 2009-03-04 | 2012-08-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal-insulator-metal structure for system-on-chip technology |
US8614497B2 (en) * | 2009-08-07 | 2013-12-24 | Broadcom Corporation | Method for fabricating a MIM capacitor using gate metal for electrode and related structure |
US8143135B2 (en) * | 2009-10-08 | 2012-03-27 | International Business Machines Corporation | Embedded series deep trench capacitors and methods of manufacture |
US8125049B2 (en) * | 2009-11-16 | 2012-02-28 | International Business Machines Corporation | MIM capacitor structure in FEOL and related method |
-
2009
- 2009-12-30 IT ITMI2009A002353A patent/IT1397231B1/it active
-
2010
- 2010-12-20 US US12/972,606 patent/US8916436B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8916436B2 (en) | 2014-12-23 |
ITMI20092353A1 (it) | 2011-06-30 |
US20110156207A1 (en) | 2011-06-30 |
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