JP2005268494A5 - - Google Patents

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Publication number
JP2005268494A5
JP2005268494A5 JP2004078229A JP2004078229A JP2005268494A5 JP 2005268494 A5 JP2005268494 A5 JP 2005268494A5 JP 2004078229 A JP2004078229 A JP 2004078229A JP 2004078229 A JP2004078229 A JP 2004078229A JP 2005268494 A5 JP2005268494 A5 JP 2005268494A5
Authority
JP
Japan
Prior art keywords
opening
insulating film
plug
film
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004078229A
Other languages
English (en)
Japanese (ja)
Other versions
JP3935475B2 (ja
JP2005268494A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004078229A priority Critical patent/JP3935475B2/ja
Priority claimed from JP2004078229A external-priority patent/JP3935475B2/ja
Priority to US11/101,645 priority patent/US7598556B2/en
Publication of JP2005268494A publication Critical patent/JP2005268494A/ja
Publication of JP2005268494A5 publication Critical patent/JP2005268494A5/ja
Application granted granted Critical
Publication of JP3935475B2 publication Critical patent/JP3935475B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004078229A 2004-03-18 2004-03-18 半導体装置及びその製造方法 Expired - Fee Related JP3935475B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004078229A JP3935475B2 (ja) 2004-03-18 2004-03-18 半導体装置及びその製造方法
US11/101,645 US7598556B2 (en) 2004-03-18 2005-04-08 Ferroelectric memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004078229A JP3935475B2 (ja) 2004-03-18 2004-03-18 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006034398A Division JP4557903B2 (ja) 2006-02-10 2006-02-10 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2005268494A JP2005268494A (ja) 2005-09-29
JP2005268494A5 true JP2005268494A5 (enExample) 2006-01-12
JP3935475B2 JP3935475B2 (ja) 2007-06-20

Family

ID=35092730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004078229A Expired - Fee Related JP3935475B2 (ja) 2004-03-18 2004-03-18 半導体装置及びその製造方法

Country Status (2)

Country Link
US (1) US7598556B2 (enExample)
JP (1) JP3935475B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004004584A1 (de) * 2004-01-29 2005-08-25 Infineon Technologies Ag Halbleiterspeicherzelle sowie zugehöriges Herstellungsverfahren
JP2007329314A (ja) * 2006-06-08 2007-12-20 Matsushita Electric Ind Co Ltd 半導体記憶装置及びその製造方法
WO2009150814A1 (ja) 2008-06-10 2009-12-17 パナソニック株式会社 半導体装置、半導体装置の製造方法、半導体チップおよびシステム
US8395196B2 (en) 2010-11-16 2013-03-12 International Business Machines Corporation Hydrogen barrier liner for ferro-electric random access memory (FRAM) chip
JP5863381B2 (ja) * 2011-10-17 2016-02-16 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US9530833B2 (en) * 2014-06-17 2016-12-27 Globalfoundaries Inc. Semiconductor structure including capacitors having different capacitor dielectrics and method for the formation thereof
US9420693B2 (en) * 2014-09-18 2016-08-16 Intel Corporation Integration of embedded thin film capacitors in package substrates
US9685216B2 (en) * 2015-01-24 2017-06-20 Fudan University Non-destructive readout ferroelectric memory as well as method of preparing the same and method of operating the same
CN116133436A (zh) * 2021-11-12 2023-05-16 联华电子股份有限公司 半导体元件及其制作方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5567636A (en) * 1995-02-27 1996-10-22 Motorola Inc. Process for forming a nonvolatile random access memory array
JP3346994B2 (ja) 1996-09-13 2002-11-18 株式会社東芝 キャパシタ及びその製造方法
JPH118355A (ja) 1997-06-16 1999-01-12 Nec Corp 強誘電体メモリ
JP2000150810A (ja) 1998-11-17 2000-05-30 Toshiba Microelectronics Corp 半導体装置及びその製造方法
TW454330B (en) 1999-05-26 2001-09-11 Matsushita Electronics Corp Semiconductor apparatus and its manufacturing method
JP2002083880A (ja) 2000-06-30 2002-03-22 Toshiba Corp 半導体装置及びその製造方法
JP2002198494A (ja) 2000-10-17 2002-07-12 Matsushita Electric Ind Co Ltd 強誘電体メモリ及びその製造方法
US6958508B2 (en) * 2000-10-17 2005-10-25 Matsushita Electric Industrial Co., Ltd. Ferroelectric memory having ferroelectric capacitor insulative film
JP3833887B2 (ja) * 2000-10-30 2006-10-18 株式会社東芝 強誘電体メモリ及びその製造方法
US6762445B2 (en) * 2001-07-19 2004-07-13 Matsushita Electric Industrial Co., Ltd. DRAM memory cell with dummy lower electrode for connection between upper electrode and upper layer interconnect
JP3962296B2 (ja) 2001-09-27 2007-08-22 松下電器産業株式会社 強誘電体メモリ装置及びその製造方法
EP1298730A3 (en) * 2001-09-27 2007-12-26 Matsushita Electric Industrial Co., Ltd. Ferroelectric memory and method for fabricating the same
JP2003289134A (ja) 2002-03-28 2003-10-10 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2003332261A (ja) 2002-05-13 2003-11-21 Toshiba Corp 半導体装置の製造方法
CN100355073C (zh) * 2002-11-13 2007-12-12 松下电器产业株式会社 半导体器件及其制造方法

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