JP2004072122A5 - - Google Patents

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Publication number
JP2004072122A5
JP2004072122A5 JP2003331791A JP2003331791A JP2004072122A5 JP 2004072122 A5 JP2004072122 A5 JP 2004072122A5 JP 2003331791 A JP2003331791 A JP 2003331791A JP 2003331791 A JP2003331791 A JP 2003331791A JP 2004072122 A5 JP2004072122 A5 JP 2004072122A5
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Japan
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silicon
containing layer
semiconductor substrate
lower silicon
layer
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Pending
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JP2003331791A
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Japanese (ja)
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JP2004072122A (ja
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Priority claimed from US08/818,660 external-priority patent/US6309975B1/en
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Publication of JP2004072122A publication Critical patent/JP2004072122A/ja
Publication of JP2004072122A5 publication Critical patent/JP2004072122A5/ja
Pending legal-status Critical Current

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JP2003331791A 1997-03-14 2003-09-24 電気的素子 Pending JP2004072122A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/818,660 US6309975B1 (en) 1997-03-14 1997-03-14 Methods of making implanted structures

Related Parent Applications (1)

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JP53986698A Division JP3623804B2 (ja) 1997-03-14 1998-03-13 イオンが注入された構造体および形成方法

Publications (2)

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JP2004072122A JP2004072122A (ja) 2004-03-04
JP2004072122A5 true JP2004072122A5 (enExample) 2005-08-11

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ID=25226089

Family Applications (2)

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JP53986698A Expired - Fee Related JP3623804B2 (ja) 1997-03-14 1998-03-13 イオンが注入された構造体および形成方法
JP2003331791A Pending JP2004072122A (ja) 1997-03-14 2003-09-24 電気的素子

Family Applications Before (1)

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JP53986698A Expired - Fee Related JP3623804B2 (ja) 1997-03-14 1998-03-13 イオンが注入された構造体および形成方法

Country Status (7)

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US (6) US6309975B1 (enExample)
EP (1) EP0968526A2 (enExample)
JP (2) JP3623804B2 (enExample)
KR (2) KR100485995B1 (enExample)
AU (1) AU6555198A (enExample)
TW (1) TW419742B (enExample)
WO (1) WO1998040909A2 (enExample)

Families Citing this family (210)

* Cited by examiner, † Cited by third party
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