JP2005191454A5 - - Google Patents

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Publication number
JP2005191454A5
JP2005191454A5 JP2003433992A JP2003433992A JP2005191454A5 JP 2005191454 A5 JP2005191454 A5 JP 2005191454A5 JP 2003433992 A JP2003433992 A JP 2003433992A JP 2003433992 A JP2003433992 A JP 2003433992A JP 2005191454 A5 JP2005191454 A5 JP 2005191454A5
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JP
Japan
Prior art keywords
mos transistor
driver
insulating film
interlayer insulating
load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003433992A
Other languages
English (en)
Japanese (ja)
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JP2005191454A (ja
JP4753534B2 (ja
Filing date
Publication date
Priority claimed from JP2003433992A external-priority patent/JP4753534B2/ja
Priority to JP2003433992A priority Critical patent/JP4753534B2/ja
Application filed filed Critical
Priority to KR1020040105290A priority patent/KR20050067003A/ko
Priority to US11/016,905 priority patent/US7064398B2/en
Publication of JP2005191454A publication Critical patent/JP2005191454A/ja
Priority to US11/414,372 priority patent/US7514737B2/en
Publication of JP2005191454A5 publication Critical patent/JP2005191454A5/ja
Priority to US12/396,130 priority patent/US7791122B2/en
Priority to US12/858,797 priority patent/US8129771B2/en
Publication of JP4753534B2 publication Critical patent/JP4753534B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003433992A 2003-12-26 2003-12-26 半導体記憶装置 Expired - Fee Related JP4753534B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003433992A JP4753534B2 (ja) 2003-12-26 2003-12-26 半導体記憶装置
KR1020040105290A KR20050067003A (ko) 2003-12-26 2004-12-14 반도체 기억장치
US11/016,905 US7064398B2 (en) 2003-12-26 2004-12-21 Semiconductor memory device
US11/414,372 US7514737B2 (en) 2003-12-26 2006-05-01 Semiconductor memory device
US12/396,130 US7791122B2 (en) 2003-12-26 2009-03-02 Semiconductor memory device
US12/858,797 US8129771B2 (en) 2003-12-26 2010-08-18 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003433992A JP4753534B2 (ja) 2003-12-26 2003-12-26 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010122734A Division JP2010183123A (ja) 2010-05-28 2010-05-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2005191454A JP2005191454A (ja) 2005-07-14
JP2005191454A5 true JP2005191454A5 (enExample) 2007-02-15
JP4753534B2 JP4753534B2 (ja) 2011-08-24

Family

ID=34697749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003433992A Expired - Fee Related JP4753534B2 (ja) 2003-12-26 2003-12-26 半導体記憶装置

Country Status (3)

Country Link
US (4) US7064398B2 (enExample)
JP (1) JP4753534B2 (enExample)
KR (1) KR20050067003A (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4753534B2 (ja) * 2003-12-26 2011-08-24 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4195409B2 (ja) * 2004-04-09 2008-12-10 株式会社東芝 半導体記憶装置
US20050275043A1 (en) * 2004-06-10 2005-12-15 Chien-Chao Huang Novel semiconductor device design
US7921400B1 (en) 2005-07-20 2011-04-05 Integrated Device Technology, Inc. Method for forming integrated circuit device using cell library with soft error resistant logic cells
JP2007103862A (ja) 2005-10-07 2007-04-19 Renesas Technology Corp 半導体装置およびその製造方法
JP2007287959A (ja) * 2006-04-18 2007-11-01 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7864561B2 (en) * 2006-07-28 2011-01-04 Taiwan Semiconductor Manufacturing Co., Ltd. Cell structure with buried capacitor for soft error rate improvement
US8853791B2 (en) * 2006-11-06 2014-10-07 Infineon Technologies Ag SRAM memory cell having a dogleg shaped gate electrode structure
JP5109403B2 (ja) * 2007-02-22 2012-12-26 富士通セミコンダクター株式会社 半導体記憶装置およびその製造方法
JP5223302B2 (ja) * 2007-11-08 2013-06-26 富士通セミコンダクター株式会社 半導体装置
WO2009063542A1 (ja) 2007-11-12 2009-05-22 Fujitsu Microelectronics Limited 半導体装置
JP5386819B2 (ja) 2007-12-14 2014-01-15 富士通セミコンダクター株式会社 半導体記憶装置
KR101426486B1 (ko) * 2008-07-17 2014-08-05 삼성전자주식회사 테스트 장치 및 반도체 집적 회로 장치
KR101409372B1 (ko) * 2008-07-17 2014-06-18 삼성전자 주식회사 테스트 장치 및 반도체 집적 회로 장치
US8390033B2 (en) * 2009-02-23 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Metal structure for memory device
US8189368B2 (en) * 2009-07-31 2012-05-29 Taiwan Semiconductor Manufacturing Co., Ltd. Cell structure for dual port SRAM
JP5408455B2 (ja) * 2011-03-23 2014-02-05 株式会社東芝 半導体記憶装置
JP5711612B2 (ja) * 2011-05-24 2015-05-07 ルネサスエレクトロニクス株式会社 半導体装置
US8743580B2 (en) 2012-03-30 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for high speed ROM cells
US10497402B2 (en) 2012-03-30 2019-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for high speed ROM cells
US8766256B2 (en) 2012-06-12 2014-07-01 Taiwan Semiconductor Manufacturing Co., Ltd. SiGe SRAM butted contact resistance improvement
US9041117B2 (en) 2012-07-31 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM cell connection structure
US9418896B2 (en) 2014-11-12 2016-08-16 Samsung Electronics Co., Ltd. Semiconductor device and fabricating method thereof
JP2017069420A (ja) * 2015-09-30 2017-04-06 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
US10163925B2 (en) * 2016-03-18 2018-12-25 Toshiba Memory Corporation Integrated circuit device
KR102421300B1 (ko) * 2017-01-13 2022-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치, 전자 부품, 및 전자 기기
CN109841244A (zh) * 2017-11-24 2019-06-04 中国电子产品可靠性与环境试验研究所 抗单粒子翻转的静态随机存取存储器单元
WO2020139895A1 (en) 2018-12-24 2020-07-02 The Trustees Of Columbia University In The City Of New York Circuits and methods for in-memory computing
US10964356B2 (en) * 2019-07-03 2021-03-30 Qualcomm Incorporated Compute-in-memory bit cell
US11631455B2 (en) 2021-01-19 2023-04-18 Qualcomm Incorporated Compute-in-memory bitcell with capacitively-coupled write operation
US20230016635A1 (en) * 2021-07-09 2023-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of designing and manufacturing the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5194749A (en) * 1987-11-30 1993-03-16 Hitachi, Ltd. Semiconductor integrated circuit device
US5145799A (en) 1991-01-30 1992-09-08 Texas Instruments Incorporated Stacked capacitor SRAM cell
DE69213973T2 (de) * 1991-01-30 1997-02-13 Texas Instruments Inc SRAM-Zelle mit geschichteter Kapazität
JP3033385B2 (ja) * 1993-04-01 2000-04-17 日本電気株式会社 半導体メモリセル
JP3535615B2 (ja) * 1995-07-18 2004-06-07 株式会社ルネサステクノロジ 半導体集積回路装置
JP2002076143A (ja) 2000-08-31 2002-03-15 Mitsubishi Electric Corp 半導体装置
JP2002176112A (ja) * 2000-12-08 2002-06-21 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
KR100574715B1 (ko) * 2001-01-30 2006-04-28 가부시키가이샤 히타치세이사쿠쇼 반도체 집적 회로 장치
JP4024495B2 (ja) 2001-07-05 2007-12-19 株式会社ルネサステクノロジ 半導体集積回路装置
JP2003297954A (ja) * 2002-01-29 2003-10-17 Mitsubishi Electric Corp 半導体記憶装置
JP2005072185A (ja) * 2003-08-22 2005-03-17 Fujitsu Ltd 半導体装置及びその製造方法
JP4753534B2 (ja) * 2003-12-26 2011-08-24 ルネサスエレクトロニクス株式会社 半導体記憶装置

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