JPH11220103A5 - - Google Patents

Info

Publication number
JPH11220103A5
JPH11220103A5 JP1998019578A JP1957898A JPH11220103A5 JP H11220103 A5 JPH11220103 A5 JP H11220103A5 JP 1998019578 A JP1998019578 A JP 1998019578A JP 1957898 A JP1957898 A JP 1957898A JP H11220103 A5 JPH11220103 A5 JP H11220103A5
Authority
JP
Japan
Prior art keywords
substrate
bonding
layer
forming
bonding layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998019578A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11220103A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10019578A priority Critical patent/JPH11220103A/ja
Priority claimed from JP10019578A external-priority patent/JPH11220103A/ja
Priority to US09/143,400 priority patent/US6242298B1/en
Publication of JPH11220103A publication Critical patent/JPH11220103A/ja
Publication of JPH11220103A5 publication Critical patent/JPH11220103A5/ja
Pending legal-status Critical Current

Links

JP10019578A 1997-08-29 1998-01-30 半導体記憶装置及びその製造方法 Pending JPH11220103A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10019578A JPH11220103A (ja) 1998-01-30 1998-01-30 半導体記憶装置及びその製造方法
US09/143,400 US6242298B1 (en) 1997-08-29 1998-08-28 Semiconductor memory device having epitaxial planar capacitor and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10019578A JPH11220103A (ja) 1998-01-30 1998-01-30 半導体記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPH11220103A JPH11220103A (ja) 1999-08-10
JPH11220103A5 true JPH11220103A5 (enExample) 2005-07-28

Family

ID=12003170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10019578A Pending JPH11220103A (ja) 1997-08-29 1998-01-30 半導体記憶装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPH11220103A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4682769B2 (ja) * 2004-09-30 2011-05-11 Ｔｄｋ株式会社 誘電体薄膜、薄膜誘電体素子及びその製造方法
CN109768050B (zh) * 2018-12-18 2020-11-17 长江存储科技有限责任公司 三维存储器及其制备方法
JP2021150626A (ja) * 2020-03-24 2021-09-27 キオクシア株式会社 メモリデバイス及びメモリデバイスの製造方法
US12362301B2 (en) 2020-06-26 2025-07-15 SanDisk Technologies, Inc. Bonded memory devices and methods of making the same
WO2021262239A1 (en) * 2020-06-26 2021-12-30 Sandisk Technologies Llc Bonded memory devices and methods of making the same
US11903218B2 (en) 2020-06-26 2024-02-13 Sandisk Technologies Llc Bonded memory devices and methods of making the same

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