JP2004241632A5 - - Google Patents
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- Publication number
- JP2004241632A5 JP2004241632A5 JP2003029657A JP2003029657A JP2004241632A5 JP 2004241632 A5 JP2004241632 A5 JP 2004241632A5 JP 2003029657 A JP2003029657 A JP 2003029657A JP 2003029657 A JP2003029657 A JP 2003029657A JP 2004241632 A5 JP2004241632 A5 JP 2004241632A5
- Authority
- JP
- Japan
- Prior art keywords
- ferroelectric
- sheet
- layer
- substrate
- cell array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010410 layer Substances 0.000 claims 16
- 239000000758 substrate Substances 0.000 claims 10
- 239000010409 thin film Substances 0.000 claims 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 229910052732 germanium Inorganic materials 0.000 claims 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 239000003990 capacitor Substances 0.000 claims 3
- 230000002093 peripheral effect Effects 0.000 claims 3
- 238000000926 separation method Methods 0.000 claims 3
- 239000012790 adhesive layer Substances 0.000 claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 239000000470 constituent Substances 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003029657A JP2004241632A (ja) | 2003-02-06 | 2003-02-06 | 強誘電体メモリおよびその製造方法 |
| CNB200410005319XA CN100456476C (zh) | 2003-02-06 | 2004-02-05 | 强介电存储器及其制造方法 |
| US10/771,353 US20050013161A1 (en) | 2003-02-06 | 2004-02-05 | Ferroelectric memory and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003029657A JP2004241632A (ja) | 2003-02-06 | 2003-02-06 | 強誘電体メモリおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004241632A JP2004241632A (ja) | 2004-08-26 |
| JP2004241632A5 true JP2004241632A5 (enExample) | 2005-05-26 |
Family
ID=32956772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003029657A Withdrawn JP2004241632A (ja) | 2003-02-06 | 2003-02-06 | 強誘電体メモリおよびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20050013161A1 (enExample) |
| JP (1) | JP2004241632A (enExample) |
| CN (1) | CN100456476C (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5063084B2 (ja) * | 2005-11-09 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2010258037A (ja) * | 2009-04-21 | 2010-11-11 | Fujifilm Corp | 電子デバイスの製造方法 |
| KR101942980B1 (ko) * | 2012-01-17 | 2019-01-29 | 삼성디스플레이 주식회사 | 반도체 디바이스 및 그 형성 방법 |
| KR101429160B1 (ko) | 2013-06-21 | 2014-09-23 | 한국과학기술원 | 멀티비트 메모리 소자 |
| JP6488358B2 (ja) * | 2017-10-26 | 2019-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2788265B2 (ja) * | 1988-07-08 | 1998-08-20 | オリンパス光学工業株式会社 | 強誘電体メモリ及びその駆動方法，製造方法 |
| EP0490288A3 (en) * | 1990-12-11 | 1992-09-02 | Ramtron Corporation | Process for fabricating pzt capacitors as integrated circuit memory elements and a capacitor storage element |
| CN1111754C (zh) * | 1997-03-26 | 2003-06-18 | 精工爱普生株式会社 | 液晶装置、电光装置及使用了这种装置的投影型显示装置 |
| JP4085459B2 (ja) * | 1998-03-02 | 2008-05-14 | セイコーエプソン株式会社 | ３次元デバイスの製造方法 |
| KR100268424B1 (ko) * | 1998-08-07 | 2000-10-16 | 윤종용 | 반도체 장치의 배선 형성 방법 |
| JP2001230384A (ja) * | 2000-02-17 | 2001-08-24 | Seiko Epson Corp | 多層強誘電体記憶装置 |
| JP2002026282A (ja) * | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | 単純マトリクス型メモリ素子の製造方法 |
| JP2002026283A (ja) * | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | 多層構造のメモリ装置及びその製造方法 |
| JP4720046B2 (ja) * | 2000-09-01 | 2011-07-13 | ソニー株式会社 | 強誘電体型不揮発性半導体メモリの駆動方法 |
| US7008669B2 (en) * | 2001-06-13 | 2006-03-07 | Seiko Epson Corporation | Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element |
| EP1548833A4 (en) * | 2002-08-19 | 2007-03-21 | Seiko Epson Corp | FERROELECTRIC STORAGE AND METHOD FOR THE PRODUCTION THEREOF |
-
2003
- 2003-02-06 JP JP2003029657A patent/JP2004241632A/ja not_active Withdrawn
-
2004
- 2004-02-05 US US10/771,353 patent/US20050013161A1/en not_active Abandoned
- 2004-02-05 CN CNB200410005319XA patent/CN100456476C/zh not_active Expired - Fee Related
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