CN100456476C - 强介电存储器及其制造方法 - Google Patents
强介电存储器及其制造方法 Download PDFInfo
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- CN100456476C CN100456476C CNB200410005319XA CN200410005319A CN100456476C CN 100456476 C CN100456476 C CN 100456476C CN B200410005319X A CNB200410005319X A CN B200410005319XA CN 200410005319 A CN200410005319 A CN 200410005319A CN 100456476 C CN100456476 C CN 100456476C
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- Prior art keywords
- layer
- ferroelectric
- substrate
- forming
- cell array
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- Expired - Fee Related
Links
- 230000015654 memory Effects 0.000 title claims abstract description 154
- 238000004519 manufacturing process Methods 0.000 title claims description 44
- 239000010409 thin film Substances 0.000 claims abstract description 37
- 239000003990 capacitor Substances 0.000 claims abstract description 26
- 239000010410 layer Substances 0.000 claims description 152
- 239000000758 substrate Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 41
- 238000000926 separation method Methods 0.000 claims description 27
- 230000002093 peripheral effect Effects 0.000 claims description 19
- 239000012790 adhesive layer Substances 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 229920005591 polysilicon Polymers 0.000 claims description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 239000000470 constituent Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 description 15
- 239000001257 hydrogen Substances 0.000 description 13
- 229910052739 hydrogen Inorganic materials 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 11
- 239000010408 film Substances 0.000 description 11
- 230000010354 integration Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- HQOWCDPFDSRYRO-CDKVKFQUSA-N CCCCCCc1ccc(cc1)C1(c2cc3-c4sc5cc(\C=C6/C(=O)c7ccccc7C6=C(C#N)C#N)sc5c4C(c3cc2-c2sc3cc(C=C4C(=O)c5ccccc5C4=C(C#N)C#N)sc3c12)(c1ccc(CCCCCC)cc1)c1ccc(CCCCCC)cc1)c1ccc(CCCCCC)cc1 Chemical compound CCCCCCc1ccc(cc1)C1(c2cc3-c4sc5cc(\C=C6/C(=O)c7ccccc7C6=C(C#N)C#N)sc5c4C(c3cc2-c2sc3cc(C=C4C(=O)c5ccccc5C4=C(C#N)C#N)sc3c12)(c1ccc(CCCCCC)cc1)c1ccc(CCCCCC)cc1)c1ccc(CCCCCC)cc1 HQOWCDPFDSRYRO-CDKVKFQUSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920000620 organic polymer Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910020684 PbZr Inorganic materials 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000003094 microcapsule Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003029657A JP2004241632A (ja) | 2003-02-06 | 2003-02-06 | 強誘電体メモリおよびその製造方法 |
| JP200329657 | 2003-02-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1519942A CN1519942A (zh) | 2004-08-11 |
| CN100456476C true CN100456476C (zh) | 2009-01-28 |
Family
ID=32956772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200410005319XA Expired - Fee Related CN100456476C (zh) | 2003-02-06 | 2004-02-05 | 强介电存储器及其制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20050013161A1 (enExample) |
| JP (1) | JP2004241632A (enExample) |
| CN (1) | CN100456476C (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5063084B2 (ja) * | 2005-11-09 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2010258037A (ja) * | 2009-04-21 | 2010-11-11 | Fujifilm Corp | 電子デバイスの製造方法 |
| KR101942980B1 (ko) * | 2012-01-17 | 2019-01-29 | 삼성디스플레이 주식회사 | 반도체 디바이스 및 그 형성 방법 |
| KR101429160B1 (ko) | 2013-06-21 | 2014-09-23 | 한국과학기술원 | 멀티비트 메모리 소자 |
| JP6488358B2 (ja) * | 2017-10-26 | 2019-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5060191A (en) * | 1988-07-08 | 1991-10-22 | Olympus Optical Co., Ltd. | Ferroelectric memory |
| EP0490288A2 (en) * | 1990-12-11 | 1992-06-17 | Ramtron International Corporation | Process for fabricating PZT capacitors as integrated circuit memory elements and a capacitor storage element |
| CN1256792A (zh) * | 1998-03-02 | 2000-06-14 | 精工爱普生株式会社 | 三维器件 |
| US6262446B1 (en) * | 1998-08-07 | 2001-07-17 | Samsung Electronics Co., Ltd. | Methods of forming multilevel conductive interconnections including capacitor electrodes for integrated circuit devices |
| JP2001230384A (ja) * | 2000-02-17 | 2001-08-24 | Seiko Epson Corp | 多層強誘電体記憶装置 |
| JP2002026282A (ja) * | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | 単純マトリクス型メモリ素子の製造方法 |
| JP2002026283A (ja) * | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | 多層構造のメモリ装置及びその製造方法 |
| JP2002150766A (ja) * | 2000-09-01 | 2002-05-24 | Sony Corp | 強誘電体型不揮発性半導体メモリの駆動方法 |
| US20030020157A1 (en) * | 2001-06-13 | 2003-01-30 | Seiko Epson Corporation | Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1111754C (zh) * | 1997-03-26 | 2003-06-18 | 精工爱普生株式会社 | 液晶装置、电光装置及使用了这种装置的投影型显示装置 |
| EP1548833A4 (en) * | 2002-08-19 | 2007-03-21 | Seiko Epson Corp | FERROELECTRIC STORAGE AND METHOD FOR THE PRODUCTION THEREOF |
-
2003
- 2003-02-06 JP JP2003029657A patent/JP2004241632A/ja not_active Withdrawn
-
2004
- 2004-02-05 US US10/771,353 patent/US20050013161A1/en not_active Abandoned
- 2004-02-05 CN CNB200410005319XA patent/CN100456476C/zh not_active Expired - Fee Related
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5060191A (en) * | 1988-07-08 | 1991-10-22 | Olympus Optical Co., Ltd. | Ferroelectric memory |
| EP0490288A2 (en) * | 1990-12-11 | 1992-06-17 | Ramtron International Corporation | Process for fabricating PZT capacitors as integrated circuit memory elements and a capacitor storage element |
| CN1256792A (zh) * | 1998-03-02 | 2000-06-14 | 精工爱普生株式会社 | 三维器件 |
| US6262446B1 (en) * | 1998-08-07 | 2001-07-17 | Samsung Electronics Co., Ltd. | Methods of forming multilevel conductive interconnections including capacitor electrodes for integrated circuit devices |
| JP2001230384A (ja) * | 2000-02-17 | 2001-08-24 | Seiko Epson Corp | 多層強誘電体記憶装置 |
| JP2002026282A (ja) * | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | 単純マトリクス型メモリ素子の製造方法 |
| JP2002026283A (ja) * | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | 多層構造のメモリ装置及びその製造方法 |
| JP2002150766A (ja) * | 2000-09-01 | 2002-05-24 | Sony Corp | 強誘電体型不揮発性半導体メモリの駆動方法 |
| US20030020157A1 (en) * | 2001-06-13 | 2003-01-30 | Seiko Epson Corporation | Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element |
Also Published As
| Publication number | Publication date |
|---|---|
| US20050013161A1 (en) | 2005-01-20 |
| JP2004241632A (ja) | 2004-08-26 |
| CN1519942A (zh) | 2004-08-11 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090128 Termination date: 20160205 |