JP2004241632A - 強誘電体メモリおよびその製造方法 - Google Patents

強誘電体メモリおよびその製造方法 Download PDF

Info

Publication number
JP2004241632A
JP2004241632A JP2003029657A JP2003029657A JP2004241632A JP 2004241632 A JP2004241632 A JP 2004241632A JP 2003029657 A JP2003029657 A JP 2003029657A JP 2003029657 A JP2003029657 A JP 2003029657A JP 2004241632 A JP2004241632 A JP 2004241632A
Authority
JP
Japan
Prior art keywords
ferroelectric
layer
sheet
ferroelectric memory
cell array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003029657A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004241632A5 (enExample
Inventor
Akito Matsumoto
昭人 松本
Eiji Natori
栄治 名取
Tatsuya Shimoda
達也 下田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2003029657A priority Critical patent/JP2004241632A/ja
Priority to CNB200410005319XA priority patent/CN100456476C/zh
Priority to US10/771,353 priority patent/US20050013161A1/en
Publication of JP2004241632A publication Critical patent/JP2004241632A/ja
Publication of JP2004241632A5 publication Critical patent/JP2004241632A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP2003029657A 2003-02-06 2003-02-06 強誘電体メモリおよびその製造方法 Withdrawn JP2004241632A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003029657A JP2004241632A (ja) 2003-02-06 2003-02-06 強誘電体メモリおよびその製造方法
CNB200410005319XA CN100456476C (zh) 2003-02-06 2004-02-05 强介电存储器及其制造方法
US10/771,353 US20050013161A1 (en) 2003-02-06 2004-02-05 Ferroelectric memory and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003029657A JP2004241632A (ja) 2003-02-06 2003-02-06 強誘電体メモリおよびその製造方法

Publications (2)

Publication Number Publication Date
JP2004241632A true JP2004241632A (ja) 2004-08-26
JP2004241632A5 JP2004241632A5 (enExample) 2005-05-26

Family

ID=32956772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003029657A Withdrawn JP2004241632A (ja) 2003-02-06 2003-02-06 強誘電体メモリおよびその製造方法

Country Status (3)

Country Link
US (1) US20050013161A1 (enExample)
JP (1) JP2004241632A (enExample)
CN (1) CN100456476C (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007158317A (ja) * 2005-11-09 2007-06-21 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
JP2010258037A (ja) * 2009-04-21 2010-11-11 Fujifilm Corp 電子デバイスの製造方法
KR101429160B1 (ko) * 2013-06-21 2014-09-23 한국과학기술원 멀티비트 메모리 소자
JP2018037674A (ja) * 2017-10-26 2018-03-08 株式会社半導体エネルギー研究所 半導体装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101942980B1 (ko) * 2012-01-17 2019-01-29 삼성디스플레이 주식회사 반도체 디바이스 및 그 형성 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2788265B2 (ja) * 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
EP0490288A3 (en) * 1990-12-11 1992-09-02 Ramtron Corporation Process for fabricating pzt capacitors as integrated circuit memory elements and a capacitor storage element
WO1998043130A1 (en) * 1997-03-26 1998-10-01 Seiko Epson Corporation Liquid crystal device, electrooptic device, and projection display device using the same
JP4085459B2 (ja) * 1998-03-02 2008-05-14 セイコーエプソン株式会社 ３次元デバイスの製造方法
KR100268424B1 (ko) * 1998-08-07 2000-10-16 윤종용 반도체 장치의 배선 형성 방법
JP2001230384A (ja) * 2000-02-17 2001-08-24 Seiko Epson Corp 多層強誘電体記憶装置
JP2002026283A (ja) * 2000-06-30 2002-01-25 Seiko Epson Corp 多層構造のメモリ装置及びその製造方法
JP2002026282A (ja) * 2000-06-30 2002-01-25 Seiko Epson Corp 単純マトリクス型メモリ素子の製造方法
JP4720046B2 (ja) * 2000-09-01 2011-07-13 ソニー株式会社 強誘電体型不揮発性半導体メモリの駆動方法
US7205056B2 (en) * 2001-06-13 2007-04-17 Seiko Epson Corporation Ceramic film and method of manufacturing the same, ferroelectric capacitor, semiconductor device, and other element
JPWO2004017410A1 (ja) * 2002-08-19 2005-12-08 セイコーエプソン株式会社 強誘電体メモリおよびその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007158317A (ja) * 2005-11-09 2007-06-21 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法
JP2010258037A (ja) * 2009-04-21 2010-11-11 Fujifilm Corp 電子デバイスの製造方法
KR101429160B1 (ko) * 2013-06-21 2014-09-23 한국과학기술원 멀티비트 메모리 소자
US9087609B2 (en) 2013-06-21 2015-07-21 Korea Advanced Institute Of Science & Technology Multi-bit memory device
JP2018037674A (ja) * 2017-10-26 2018-03-08 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
US20050013161A1 (en) 2005-01-20
CN1519942A (zh) 2004-08-11
CN100456476C (zh) 2009-01-28

Similar Documents

Publication Publication Date Title
JP4085459B2 (ja) ３次元デバイスの製造方法
CN101501852B (zh) 非易失性存储元件阵列
JP3940883B2 (ja) 強誘電体メモリ装置の製造方法
JP2002026283A (ja) 多層構造のメモリ装置及びその製造方法
KR100457121B1 (ko) 강유전체 메모리 소자 및 그 제조 방법
JP4061846B2 (ja) 積層体の製造方法及び半導体装置の製造方法
CN1698204A (zh) 非易失性存储器及其制造方法
US6433376B2 (en) Ferroelectric memory integrated circuit
US20070272959A1 (en) Ferroelectric memory cell and manufacturing method thereof
JP3622598B2 (ja) 不揮発性メモリ素子の製造方法
US6917063B2 (en) Ferroelectric memory and method of fabricating the same
CN100456476C (zh) 强介电存储器及其制造方法
JP2788290B2 (ja) 強誘電体メモリ
US6917062B2 (en) Ferroelectric memory device
JP2007281373A (ja) 半導体装置及びその製造方法
CN1181627A (zh) 半导体器件的制造方法和半导体器件
US20040152213A1 (en) Ferroelectric memory, method of fabricating the same, semiconductor device, and method of fabricating the same
JP3606367B2 (ja) メモリデバイス及びその製造方法並びに電子機器
US20050189571A1 (en) Ferroelectric memory
JP2004241632A5 (enExample)
KR20010109615A (ko) 반도체 소자의 강유전체 캐패시터
JP2006245185A (ja) 有機強誘電体メモリ及びその製造方法
JP2006269611A (ja) 半導体装置、半導体パッケージ装置、強誘電体キャパシタの再生方法、強誘電体メモリ装置の初期化方法、および強誘電体メモリ装置の廃却方法
CN118382301A (zh) 一种高带宽铪基铁电存储器及其制作方法
JP4711063B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040727

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040727

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20051209

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20051214

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20051221

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060210

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070320

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20070518