JP2008124266A5 - - Google Patents

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Publication number
JP2008124266A5
JP2008124266A5 JP2006306853A JP2006306853A JP2008124266A5 JP 2008124266 A5 JP2008124266 A5 JP 2008124266A5 JP 2006306853 A JP2006306853 A JP 2006306853A JP 2006306853 A JP2006306853 A JP 2006306853A JP 2008124266 A5 JP2008124266 A5 JP 2008124266A5
Authority
JP
Japan
Prior art keywords
mis transistor
gate electrode
region
display device
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006306853A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008124266A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006306853A priority Critical patent/JP2008124266A/ja
Priority claimed from JP2006306853A external-priority patent/JP2008124266A/ja
Priority to TW096142727A priority patent/TW200837960A/zh
Priority to CNA2007101851947A priority patent/CN101183679A/zh
Priority to KR1020070114865A priority patent/KR100898852B1/ko
Priority to US11/939,073 priority patent/US20080173871A1/en
Publication of JP2008124266A publication Critical patent/JP2008124266A/ja
Publication of JP2008124266A5 publication Critical patent/JP2008124266A5/ja
Withdrawn legal-status Critical Current

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JP2006306853A 2006-11-13 2006-11-13 表示装置および表示装置の製造方法 Withdrawn JP2008124266A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006306853A JP2008124266A (ja) 2006-11-13 2006-11-13 表示装置および表示装置の製造方法
TW096142727A TW200837960A (en) 2006-11-13 2007-11-12 Display device and manufacturing method of display device
CNA2007101851947A CN101183679A (zh) 2006-11-13 2007-11-12 显示装置和显示装置的制造方法
KR1020070114865A KR100898852B1 (ko) 2006-11-13 2007-11-12 표시 장치 및 표시 장치의 제조 방법
US11/939,073 US20080173871A1 (en) 2006-11-13 2007-11-13 Display Device and Manufacturing Method of Display Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006306853A JP2008124266A (ja) 2006-11-13 2006-11-13 表示装置および表示装置の製造方法

Publications (2)

Publication Number Publication Date
JP2008124266A JP2008124266A (ja) 2008-05-29
JP2008124266A5 true JP2008124266A5 (enExample) 2009-07-09

Family

ID=39448859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006306853A Withdrawn JP2008124266A (ja) 2006-11-13 2006-11-13 表示装置および表示装置の製造方法

Country Status (5)

Country Link
US (1) US20080173871A1 (enExample)
JP (1) JP2008124266A (enExample)
KR (1) KR100898852B1 (enExample)
CN (1) CN101183679A (enExample)
TW (1) TW200837960A (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100908472B1 (ko) * 2007-11-20 2009-07-21 주식회사 엔씰텍 박막트랜지스터, 그의 제조방법, 그를 포함하는평판표시장치 및 그의 제조방법
KR101383705B1 (ko) * 2007-12-18 2014-04-10 삼성디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터를 포함하는 표시 장치및 그 제조 방법
JP2010109286A (ja) * 2008-10-31 2010-05-13 Hitachi Displays Ltd 表示装置
JP5429454B2 (ja) * 2009-04-17 2014-02-26 ソニー株式会社 薄膜トランジスタの製造方法および薄膜トランジスタ
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2011010545A1 (en) * 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP2460183A4 (en) * 2009-07-31 2015-10-07 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
TWI650848B (zh) 2009-08-07 2019-02-11 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
KR20180082636A (ko) 2010-04-28 2018-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP5558222B2 (ja) * 2010-06-18 2014-07-23 シャープ株式会社 薄膜トランジスタ基板の製造方法
US9111803B2 (en) 2011-10-03 2015-08-18 Joled Inc. Thin-film device, thin-film device array, and method of manufacturing thin-film device
KR102099288B1 (ko) * 2013-05-29 2020-04-10 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
CN103646951A (zh) * 2013-12-17 2014-03-19 山东大学 一种耐高温电子器件原材料及其应用
KR102118676B1 (ko) * 2014-02-05 2020-06-04 삼성디스플레이 주식회사 유기발광 디스플레이 장치
CN104377207A (zh) * 2014-08-29 2015-02-25 深超光电（深圳）有限公司 显示面板及制造该显示面板的方法
JP2016213508A (ja) * 2016-09-07 2016-12-15 株式会社ジャパンディスプレイ 薄膜トランジスタ回路基板
DE102018102044B4 (de) 2018-01-30 2024-11-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur reparatur einer optoelektronischen schaltungsanordnung
CN109801909B (zh) 2018-06-12 2024-08-20 京东方科技集团股份有限公司 阵列基板母板及其制造方法、阵列基板、显示装置
CN111933648A (zh) * 2020-08-14 2020-11-13 京东方科技集团股份有限公司 阵列基板及其制备方法和显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3255942B2 (ja) * 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
JPH1197705A (ja) * 1997-09-23 1999-04-09 Semiconductor Energy Lab Co Ltd 半導体集積回路
US6506635B1 (en) * 1999-02-12 2003-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of forming the same
JP2001177103A (ja) * 1999-12-20 2001-06-29 Sony Corp 薄膜半導体装置及び表示装置とその製造方法
JP2001217423A (ja) * 2000-02-01 2001-08-10 Sony Corp 薄膜半導体装置及び表示装置とその製造方法
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
KR100566612B1 (ko) * 2003-09-23 2006-03-31 엘지.필립스 엘시디 주식회사 다결정 실리콘 박막 트랜지스터 및 그 제조 방법
KR101048983B1 (ko) * 2004-08-31 2011-07-12 엘지디스플레이 주식회사 부분 결정화된 박막트랜지스터를 구비한 액정표시장치 및그 제조방법
KR101051004B1 (ko) * 2004-12-01 2011-07-26 엘지디스플레이 주식회사 두 가지 타입의 박막트랜지스터를 포함하는액정표시장치용 어레이기판 및 그 제조방법

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