KR100898852B1 - 표시 장치 및 표시 장치의 제조 방법 - Google Patents

표시 장치 및 표시 장치의 제조 방법 Download PDF

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Publication number
KR100898852B1
KR100898852B1 KR1020070114865A KR20070114865A KR100898852B1 KR 100898852 B1 KR100898852 B1 KR 100898852B1 KR 1020070114865 A KR1020070114865 A KR 1020070114865A KR 20070114865 A KR20070114865 A KR 20070114865A KR 100898852 B1 KR100898852 B1 KR 100898852B1
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South Korea
Prior art keywords
gate electrode
region
conductive layer
mis transistor
forming
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English (en)
Korean (ko)
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KR20080043247A (ko
Inventor
다께시 노다
다까히로 가모
히데아끼 신모또
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가부시키가이샤 히타치 디스프레이즈
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
KR1020070114865A 2006-11-13 2007-11-12 표시 장치 및 표시 장치의 제조 방법 Expired - Fee Related KR100898852B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006306853A JP2008124266A (ja) 2006-11-13 2006-11-13 表示装置および表示装置の製造方法
JPJP-P-2006-00306853 2006-11-13

Publications (2)

Publication Number Publication Date
KR20080043247A KR20080043247A (ko) 2008-05-16
KR100898852B1 true KR100898852B1 (ko) 2009-05-21

Family

ID=39448859

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070114865A Expired - Fee Related KR100898852B1 (ko) 2006-11-13 2007-11-12 표시 장치 및 표시 장치의 제조 방법

Country Status (5)

Country Link
US (1) US20080173871A1 (enExample)
JP (1) JP2008124266A (enExample)
KR (1) KR100898852B1 (enExample)
CN (1) CN101183679A (enExample)
TW (1) TW200837960A (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100908472B1 (ko) * 2007-11-20 2009-07-21 주식회사 엔씰텍 박막트랜지스터, 그의 제조방법, 그를 포함하는평판표시장치 및 그의 제조방법
KR101383705B1 (ko) 2007-12-18 2014-04-10 삼성디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터를 포함하는 표시 장치및 그 제조 방법
JP2010109286A (ja) * 2008-10-31 2010-05-13 Hitachi Displays Ltd 表示装置
JP5429454B2 (ja) * 2009-04-17 2014-02-26 ソニー株式会社 薄膜トランジスタの製造方法および薄膜トランジスタ
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2011010545A1 (en) * 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102362616B1 (ko) 2009-07-31 2022-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TWI746064B (zh) 2009-08-07 2021-11-11 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
KR101879570B1 (ko) 2010-04-28 2018-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 제작 방법
JP5558222B2 (ja) * 2010-06-18 2014-07-23 シャープ株式会社 薄膜トランジスタ基板の製造方法
US9111803B2 (en) 2011-10-03 2015-08-18 Joled Inc. Thin-film device, thin-film device array, and method of manufacturing thin-film device
KR102099288B1 (ko) * 2013-05-29 2020-04-10 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
CN103646951A (zh) * 2013-12-17 2014-03-19 山东大学 一种耐高温电子器件原材料及其应用
KR102118676B1 (ko) * 2014-02-05 2020-06-04 삼성디스플레이 주식회사 유기발광 디스플레이 장치
CN104377207A (zh) * 2014-08-29 2015-02-25 深超光电（深圳）有限公司 显示面板及制造该显示面板的方法
JP2016213508A (ja) * 2016-09-07 2016-12-15 株式会社ジャパンディスプレイ 薄膜トランジスタ回路基板
DE102018102044B4 (de) 2018-01-30 2024-11-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur reparatur einer optoelektronischen schaltungsanordnung
CN109801909B (zh) * 2018-06-12 2024-08-20 京东方科技集团股份有限公司 阵列基板母板及其制造方法、阵列基板、显示装置
CN111933648A (zh) * 2020-08-14 2020-11-13 京东方科技集团股份有限公司 阵列基板及其制备方法和显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1197705A (ja) * 1997-09-23 1999-04-09 Semiconductor Energy Lab Co Ltd 半導体集積回路
KR20060020475A (ko) * 2004-08-31 2006-03-06 엘지.필립스 엘시디 주식회사 부분 결정화된 박막트랜지스터를 구비한 액정표시장치 및그 제조방법
KR20060060937A (ko) * 2004-12-01 2006-06-07 엘지.필립스 엘시디 주식회사 두 가지 타입의 박막트랜지스터를 포함하는액정표시장치용 어레이기판 및 그 제조방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3255942B2 (ja) * 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
US6506635B1 (en) * 1999-02-12 2003-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of forming the same
JP2001177103A (ja) * 1999-12-20 2001-06-29 Sony Corp 薄膜半導体装置及び表示装置とその製造方法
JP2001217423A (ja) * 2000-02-01 2001-08-10 Sony Corp 薄膜半導体装置及び表示装置とその製造方法
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
KR100566612B1 (ko) * 2003-09-23 2006-03-31 엘지.필립스 엘시디 주식회사 다결정 실리콘 박막 트랜지스터 및 그 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1197705A (ja) * 1997-09-23 1999-04-09 Semiconductor Energy Lab Co Ltd 半導体集積回路
KR20060020475A (ko) * 2004-08-31 2006-03-06 엘지.필립스 엘시디 주식회사 부분 결정화된 박막트랜지스터를 구비한 액정표시장치 및그 제조방법
KR20060060937A (ko) * 2004-12-01 2006-06-07 엘지.필립스 엘시디 주식회사 두 가지 타입의 박막트랜지스터를 포함하는액정표시장치용 어레이기판 및 그 제조방법

Also Published As

Publication number Publication date
TW200837960A (en) 2008-09-16
US20080173871A1 (en) 2008-07-24
KR20080043247A (ko) 2008-05-16
CN101183679A (zh) 2008-05-21
JP2008124266A (ja) 2008-05-29

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