CN101183679A - 显示装置和显示装置的制造方法 - Google Patents

显示装置和显示装置的制造方法 Download PDF

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Publication number
CN101183679A
CN101183679A CNA2007101851947A CN200710185194A CN101183679A CN 101183679 A CN101183679 A CN 101183679A CN A2007101851947 A CNA2007101851947 A CN A2007101851947A CN 200710185194 A CN200710185194 A CN 200710185194A CN 101183679 A CN101183679 A CN 101183679A
Authority
CN
China
Prior art keywords
gate electrode
conductive layer
mis
area
transistorized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007101851947A
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English (en)
Chinese (zh)
Inventor
野田刚史
贺茂尚广
新本秀明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Hitachi Displays Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Displays Ltd filed Critical Hitachi Displays Ltd
Publication of CN101183679A publication Critical patent/CN101183679A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
CNA2007101851947A 2006-11-13 2007-11-12 显示装置和显示装置的制造方法 Pending CN101183679A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006306853A JP2008124266A (ja) 2006-11-13 2006-11-13 表示装置および表示装置の製造方法
JP2006306853 2006-11-13

Publications (1)

Publication Number Publication Date
CN101183679A true CN101183679A (zh) 2008-05-21

Family

ID=39448859

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007101851947A Pending CN101183679A (zh) 2006-11-13 2007-11-12 显示装置和显示装置的制造方法

Country Status (5)

Country Link
US (1) US20080173871A1 (enExample)
JP (1) JP2008124266A (enExample)
KR (1) KR100898852B1 (enExample)
CN (1) CN101183679A (enExample)
TW (1) TW200837960A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101867017A (zh) * 2009-04-17 2010-10-20 索尼公司 薄膜晶体管和用于制造薄膜晶体管的方法
CN103646951A (zh) * 2013-12-17 2014-03-19 山东大学 一种耐高温电子器件原材料及其应用
CN104992984A (zh) * 2009-07-31 2015-10-21 株式会社半导体能源研究所 半导体装置、显示模块及电子装置
CN111933648A (zh) * 2020-08-14 2020-11-13 京东方科技集团股份有限公司 阵列基板及其制备方法和显示装置

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100908472B1 (ko) * 2007-11-20 2009-07-21 주식회사 엔씰텍 박막트랜지스터, 그의 제조방법, 그를 포함하는평판표시장치 및 그의 제조방법
KR101383705B1 (ko) * 2007-12-18 2014-04-10 삼성디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터를 포함하는 표시 장치및 그 제조 방법
JP2010109286A (ja) * 2008-10-31 2010-05-13 Hitachi Displays Ltd 表示装置
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2011010545A1 (en) * 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI869133B (zh) * 2009-08-07 2025-01-01 日商半導體能源研究所股份有限公司 半導體裝置
SG184809A1 (en) 2010-04-28 2012-11-29 Semiconductor Energy Lab Semiconductor display device and driving method the same
JP5558222B2 (ja) * 2010-06-18 2014-07-23 シャープ株式会社 薄膜トランジスタ基板の製造方法
US9111803B2 (en) 2011-10-03 2015-08-18 Joled Inc. Thin-film device, thin-film device array, and method of manufacturing thin-film device
KR102099288B1 (ko) * 2013-05-29 2020-04-10 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
KR102118676B1 (ko) * 2014-02-05 2020-06-04 삼성디스플레이 주식회사 유기발광 디스플레이 장치
CN104377207A (zh) * 2014-08-29 2015-02-25 深超光电（深圳）有限公司 显示面板及制造该显示面板的方法
JP2016213508A (ja) * 2016-09-07 2016-12-15 株式会社ジャパンディスプレイ 薄膜トランジスタ回路基板
DE102018102044B4 (de) 2018-01-30 2024-11-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur reparatur einer optoelektronischen schaltungsanordnung
CN109801909B (zh) * 2018-06-12 2024-08-20 京东方科技集团股份有限公司 阵列基板母板及其制造方法、阵列基板、显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3255942B2 (ja) * 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
JPH1197705A (ja) * 1997-09-23 1999-04-09 Semiconductor Energy Lab Co Ltd 半導体集積回路
US6506635B1 (en) * 1999-02-12 2003-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of forming the same
JP2001177103A (ja) * 1999-12-20 2001-06-29 Sony Corp 薄膜半導体装置及び表示装置とその製造方法
JP2001217423A (ja) * 2000-02-01 2001-08-10 Sony Corp 薄膜半導体装置及び表示装置とその製造方法
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
KR100566612B1 (ko) * 2003-09-23 2006-03-31 엘지.필립스 엘시디 주식회사 다결정 실리콘 박막 트랜지스터 및 그 제조 방법
KR101048983B1 (ko) * 2004-08-31 2011-07-12 엘지디스플레이 주식회사 부분 결정화된 박막트랜지스터를 구비한 액정표시장치 및그 제조방법
KR101051004B1 (ko) * 2004-12-01 2011-07-26 엘지디스플레이 주식회사 두 가지 타입의 박막트랜지스터를 포함하는액정표시장치용 어레이기판 및 그 제조방법

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101867017A (zh) * 2009-04-17 2010-10-20 索尼公司 薄膜晶体管和用于制造薄膜晶体管的方法
CN104992984A (zh) * 2009-07-31 2015-10-21 株式会社半导体能源研究所 半导体装置、显示模块及电子装置
US9786689B2 (en) 2009-07-31 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Display device
US20180138211A1 (en) 2009-07-31 2018-05-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device
US10396097B2 (en) 2009-07-31 2019-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device
US10854638B2 (en) 2009-07-31 2020-12-01 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing display device
US11348949B2 (en) 2009-07-31 2022-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11728350B2 (en) 2009-07-31 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor
US12183743B2 (en) 2009-07-31 2024-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103646951A (zh) * 2013-12-17 2014-03-19 山东大学 一种耐高温电子器件原材料及其应用
CN111933648A (zh) * 2020-08-14 2020-11-13 京东方科技集团股份有限公司 阵列基板及其制备方法和显示装置

Also Published As

Publication number Publication date
KR20080043247A (ko) 2008-05-16
TW200837960A (en) 2008-09-16
US20080173871A1 (en) 2008-07-24
KR100898852B1 (ko) 2009-05-21
JP2008124266A (ja) 2008-05-29

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SE01 Entry into force of request for substantive examination
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Open date: 20080521