TW200837960A - Display device and manufacturing method of display device - Google Patents
Display device and manufacturing method of display device Download PDFInfo
- Publication number
- TW200837960A TW200837960A TW096142727A TW96142727A TW200837960A TW 200837960 A TW200837960 A TW 200837960A TW 096142727 A TW096142727 A TW 096142727A TW 96142727 A TW96142727 A TW 96142727A TW 200837960 A TW200837960 A TW 200837960A
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- gate electrode
- conductive layer
- display device
- transistor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 51
- 239000000758 substrate Substances 0.000 claims abstract description 160
- 239000004065 semiconductor Substances 0.000 claims abstract description 140
- 239000000463 material Substances 0.000 claims description 57
- 239000013078 crystal Substances 0.000 claims description 26
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 238000010030 laminating Methods 0.000 claims description 3
- 241000251468 Actinopterygii Species 0.000 claims 1
- 229910052770 Uranium Inorganic materials 0.000 claims 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 271
- 230000002093 peripheral effect Effects 0.000 description 92
- 229910052732 germanium Inorganic materials 0.000 description 51
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 51
- 239000011521 glass Substances 0.000 description 41
- 239000004973 liquid crystal related substance Substances 0.000 description 34
- 239000012535 impurity Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 239000003795 chemical substances by application Substances 0.000 description 9
- 230000010355 oscillation Effects 0.000 description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 229910052707 ruthenium Inorganic materials 0.000 description 7
- 239000004575 stone Substances 0.000 description 7
- 208000011913 Zygodactyly type 2 Diseases 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 6
- 208000018670 synpolydactyly type 1 Diseases 0.000 description 6
- 208000025793 synpolydactyly type 2 Diseases 0.000 description 6
- 229910001566 austenite Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000009751 slip forming Methods 0.000 description 4
- 208000022859 zygodactyly type 1 Diseases 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 238000007687 exposure technique Methods 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- -1 phosphorus ions Chemical class 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 230000008719 thickening Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 241000282806 Rhinoceros Species 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 210000000941 bile Anatomy 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 210000000496 pancreas Anatomy 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Recrystallisation Techniques (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006306853A JP2008124266A (ja) | 2006-11-13 | 2006-11-13 | 表示装置および表示装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200837960A true TW200837960A (en) | 2008-09-16 |
Family
ID=39448859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096142727A TW200837960A (en) | 2006-11-13 | 2007-11-12 | Display device and manufacturing method of display device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20080173871A1 (enExample) |
| JP (1) | JP2008124266A (enExample) |
| KR (1) | KR100898852B1 (enExample) |
| CN (1) | CN101183679A (enExample) |
| TW (1) | TW200837960A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI708237B (zh) * | 2010-04-28 | 2020-10-21 | 日商半導體能源研究所股份有限公司 | 半導體顯示裝置及其驅動方法 |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100908472B1 (ko) * | 2007-11-20 | 2009-07-21 | 주식회사 엔씰텍 | 박막트랜지스터, 그의 제조방법, 그를 포함하는평판표시장치 및 그의 제조방법 |
| KR101383705B1 (ko) | 2007-12-18 | 2014-04-10 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 박막 트랜지스터를 포함하는 표시 장치및 그 제조 방법 |
| JP2010109286A (ja) * | 2008-10-31 | 2010-05-13 | Hitachi Displays Ltd | 表示装置 |
| JP5429454B2 (ja) * | 2009-04-17 | 2014-02-26 | ソニー株式会社 | 薄膜トランジスタの製造方法および薄膜トランジスタ |
| JP5663214B2 (ja) * | 2009-07-03 | 2015-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2011010545A1 (en) * | 2009-07-18 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN103489871B (zh) | 2009-07-31 | 2016-03-23 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| TWI650848B (zh) | 2009-08-07 | 2019-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| JP5558222B2 (ja) * | 2010-06-18 | 2014-07-23 | シャープ株式会社 | 薄膜トランジスタ基板の製造方法 |
| WO2013051221A1 (ja) * | 2011-10-03 | 2013-04-11 | パナソニック株式会社 | 薄膜素子、薄膜素子アレイ及び薄膜素子の製造方法 |
| KR102099288B1 (ko) * | 2013-05-29 | 2020-04-10 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
| CN103646951A (zh) * | 2013-12-17 | 2014-03-19 | 山东大学 | 一种耐高温电子器件原材料及其应用 |
| KR102118676B1 (ko) * | 2014-02-05 | 2020-06-04 | 삼성디스플레이 주식회사 | 유기발광 디스플레이 장치 |
| CN104377207A (zh) * | 2014-08-29 | 2015-02-25 | 深超光电（深圳）有限公司 | 显示面板及制造该显示面板的方法 |
| JP2016213508A (ja) * | 2016-09-07 | 2016-12-15 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ回路基板 |
| DE102018102044B4 (de) | 2018-01-30 | 2024-11-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur reparatur einer optoelektronischen schaltungsanordnung |
| CN109801909B (zh) | 2018-06-12 | 2024-08-20 | 京东方科技集团股份有限公司 | 阵列基板母板及其制造方法、阵列基板、显示装置 |
| CN111933648A (zh) * | 2020-08-14 | 2020-11-13 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法和显示装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3255942B2 (ja) * | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
| JPH1197705A (ja) * | 1997-09-23 | 1999-04-09 | Semiconductor Energy Lab Co Ltd | 半導体集積回路 |
| US6506635B1 (en) * | 1999-02-12 | 2003-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method of forming the same |
| JP2001177103A (ja) * | 1999-12-20 | 2001-06-29 | Sony Corp | 薄膜半導体装置及び表示装置とその製造方法 |
| JP2001217423A (ja) * | 2000-02-01 | 2001-08-10 | Sony Corp | 薄膜半導体装置及び表示装置とその製造方法 |
| JP3903761B2 (ja) * | 2001-10-10 | 2007-04-11 | 株式会社日立製作所 | レ−ザアニ−ル方法およびレ−ザアニ−ル装置 |
| KR100566612B1 (ko) * | 2003-09-23 | 2006-03-31 | 엘지.필립스 엘시디 주식회사 | 다결정 실리콘 박막 트랜지스터 및 그 제조 방법 |
| KR101048983B1 (ko) * | 2004-08-31 | 2011-07-12 | 엘지디스플레이 주식회사 | 부분 결정화된 박막트랜지스터를 구비한 액정표시장치 및그 제조방법 |
| KR101051004B1 (ko) * | 2004-12-01 | 2011-07-26 | 엘지디스플레이 주식회사 | 두 가지 타입의 박막트랜지스터를 포함하는액정표시장치용 어레이기판 및 그 제조방법 |
-
2006
- 2006-11-13 JP JP2006306853A patent/JP2008124266A/ja not_active Withdrawn
-
2007
- 2007-11-12 TW TW096142727A patent/TW200837960A/zh unknown
- 2007-11-12 KR KR1020070114865A patent/KR100898852B1/ko not_active Expired - Fee Related
- 2007-11-12 CN CNA2007101851947A patent/CN101183679A/zh active Pending
- 2007-11-13 US US11/939,073 patent/US20080173871A1/en not_active Abandoned
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI708237B (zh) * | 2010-04-28 | 2020-10-21 | 日商半導體能源研究所股份有限公司 | 半導體顯示裝置及其驅動方法 |
| US10871841B2 (en) | 2010-04-28 | 2020-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and driving method the same |
| US11392232B2 (en) | 2010-04-28 | 2022-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and driving method the same |
| TWI777237B (zh) * | 2010-04-28 | 2022-09-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置的製造方法 |
| US11983342B2 (en) | 2010-04-28 | 2024-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and driving method the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008124266A (ja) | 2008-05-29 |
| KR20080043247A (ko) | 2008-05-16 |
| US20080173871A1 (en) | 2008-07-24 |
| KR100898852B1 (ko) | 2009-05-21 |
| CN101183679A (zh) | 2008-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200837960A (en) | Display device and manufacturing method of display device | |
| JP4386978B2 (ja) | 半導体装置の作製方法 | |
| KR100515279B1 (ko) | 반도체 장치 및 그 제조방법 | |
| TWI221340B (en) | Thin film transistor and method for fabricating thereof | |
| US7344930B2 (en) | Semiconductor device and manufacturing method thereof | |
| JPH09293879A (ja) | 表示装置およびその作製方法 | |
| JP2003273361A (ja) | 半導体装置およびその製造方法 | |
| TW200407960A (en) | Method of forming a liquid crystal display | |
| JP3980159B2 (ja) | 半導体装置の作製方法 | |
| US20040106241A1 (en) | Mask for polycrystallization and method of manufacturing thin film transistor using polycrystallization mask | |
| KR101083185B1 (ko) | 다결정 박막트랜지스터를 구비한 액정표시소자 그 제조방법 | |
| US20050142708A1 (en) | Method for forming polycrystalline silicon film | |
| CN1637474B (zh) | 液晶显示器件及其制造方法 | |
| JP2002151698A (ja) | 半導体装置およびその作製方法 | |
| JP2004039701A (ja) | 半導体装置の作製方法 | |
| KR20120007764A (ko) | 마이크로 폴리실리콘을 이용한 박막트랜지스터를 포함하는 어레이 기판 및 이의 제조방법 | |
| TWI306667B (en) | Method of fabricating planarized poly-silicon thin film transistors | |
| TWI313769B (en) | A mask for sequential lateral solidification (sls) process and a method for crystallizing amorphous silicon by using the same | |
| TWI261928B (en) | Thin film transistor device and method of manufacturing the same | |
| US7129153B2 (en) | Process for forming polycrystalline silicon layer by laser crystallization | |
| KR20100130523A (ko) | 폴리실리콘을 이용한 박막트랜지스터를 포함하는 어레이 기판 및 이의 제조방법 | |
| TW200913269A (en) | Thin film transistor and manufacturing method thereof | |
| KR101087750B1 (ko) | 두가지 타입의 박막트랜지스터를 포함하는 액정표시장치용어레이기판 및 그 제조방법 | |
| JP2000058848A (ja) | 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法 | |
| JP2005039224A (ja) | 低温多結晶シリコン薄膜トランジスタ能動層のレーザー再結晶方法 |